JPWO2020234689A5 - - Google Patents

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Publication number
JPWO2020234689A5
JPWO2020234689A5 JP2021520484A JP2021520484A JPWO2020234689A5 JP WO2020234689 A5 JPWO2020234689 A5 JP WO2020234689A5 JP 2021520484 A JP2021520484 A JP 2021520484A JP 2021520484 A JP2021520484 A JP 2021520484A JP WO2020234689 A5 JPWO2020234689 A5 JP WO2020234689A5
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JP
Japan
Prior art keywords
bit line
control circuit
global bit
transistor
inverted
Prior art date
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Granted
Application number
JP2021520484A
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English (en)
Japanese (ja)
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JP7459079B2 (ja
JPWO2020234689A1 (https=
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Priority claimed from PCT/IB2020/054454 external-priority patent/WO2020234689A1/ja
Publication of JPWO2020234689A1 publication Critical patent/JPWO2020234689A1/ja
Publication of JPWO2020234689A5 publication Critical patent/JPWO2020234689A5/ja
Priority to JP2024043913A priority Critical patent/JP7639207B2/ja
Application granted granted Critical
Publication of JP7459079B2 publication Critical patent/JP7459079B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021520484A 2019-05-23 2020-05-12 半導体装置 Active JP7459079B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024043913A JP7639207B2 (ja) 2019-05-23 2024-03-19 半導体装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2019096937 2019-05-23
JP2019096945 2019-05-23
JP2019096937 2019-05-23
JP2019096945 2019-05-23
JP2019096943 2019-05-23
JP2019096943 2019-05-23
PCT/IB2020/054454 WO2020234689A1 (ja) 2019-05-23 2020-05-12 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024043913A Division JP7639207B2 (ja) 2019-05-23 2024-03-19 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020234689A1 JPWO2020234689A1 (https=) 2020-11-26
JPWO2020234689A5 true JPWO2020234689A5 (https=) 2023-05-08
JP7459079B2 JP7459079B2 (ja) 2024-04-01

Family

ID=73458402

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021520484A Active JP7459079B2 (ja) 2019-05-23 2020-05-12 半導体装置
JP2024043913A Active JP7639207B2 (ja) 2019-05-23 2024-03-19 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024043913A Active JP7639207B2 (ja) 2019-05-23 2024-03-19 半導体装置

Country Status (5)

Country Link
US (1) US11869627B2 (https=)
JP (2) JP7459079B2 (https=)
KR (1) KR102931352B1 (https=)
CN (1) CN113748463A (https=)
WO (1) WO2020234689A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI910401B (zh) * 2022-01-27 2026-01-01 新加坡商發明與合作實驗室有限公司 伺服處理器和機架伺服器單元的機體電路微縮和拉伸平台
JPWO2023148574A1 (https=) * 2022-02-04 2023-08-10
WO2023152595A1 (ja) * 2022-02-10 2023-08-17 株式会社半導体エネルギー研究所 記憶装置
KR20240149947A (ko) * 2022-02-18 2024-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2023223127A1 (ja) * 2022-05-16 2023-11-23 株式会社半導体エネルギー研究所 半導体装置、記憶装置及び電子機器
US11984165B2 (en) * 2022-05-24 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with reduced area
US12513888B2 (en) * 2022-07-22 2025-12-30 Fujian Jinhua Integrated Circuit Co., Ltd. Memory device and manufacturing method thereof
KR20260019447A (ko) * 2023-06-09 2026-02-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000090682A (ja) 1998-09-10 2000-03-31 Toshiba Corp 半導体記憶装置
DE10009346B4 (de) * 2000-02-28 2011-06-16 Qimonda Ag Integrierte Schreib-/Leseschaltung zur Auswertung von zumindest einer Bitline in einem DRAM Speicher
JP2002008386A (ja) * 2000-06-22 2002-01-11 Toshiba Corp 半導体集積回路装置
KR101736383B1 (ko) * 2010-08-03 2017-05-30 삼성전자주식회사 메모리 장치, 이의 프리차지 제어 방법, 및 이를 포함하는 장치들
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI691960B (zh) 2010-10-05 2020-04-21 日商半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
JP2012123878A (ja) * 2010-12-09 2012-06-28 Elpida Memory Inc 半導体装置及びその制御方法
JP2013065638A (ja) * 2011-09-15 2013-04-11 Elpida Memory Inc 半導体装置
US11205461B2 (en) * 2017-06-27 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising first through fourth transistors
KR102631152B1 (ko) 2017-08-04 2024-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN111052350B (zh) 2017-09-06 2024-04-26 株式会社半导体能源研究所 半导体装置、存储装置及电子设备

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