JPWO2020233480A5 - - Google Patents
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- Publication number
- JPWO2020233480A5 JPWO2020233480A5 JP2021568365A JP2021568365A JPWO2020233480A5 JP WO2020233480 A5 JPWO2020233480 A5 JP WO2020233480A5 JP 2021568365 A JP2021568365 A JP 2021568365A JP 2021568365 A JP2021568365 A JP 2021568365A JP WO2020233480 A5 JPWO2020233480 A5 JP WO2020233480A5
- Authority
- JP
- Japan
- Prior art keywords
- compound
- dielectric constant
- low dielectric
- substrate
- constant film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 22
- -1 siloxane compound Chemical class 0.000 description 19
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 13
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 13
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 12
- 150000003961 organosilicon compounds Chemical class 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 229920002554 vinyl polymer Polymers 0.000 description 8
- 229940126062 Compound A Drugs 0.000 description 6
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 150000004759 cyclic silanes Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910413247.9A CN110158052B (zh) | 2019-05-17 | 2019-05-17 | 低介电常数膜及其制备方法 |
| CN201910413247.9 | 2019-05-17 | ||
| PCT/CN2020/090119 WO2020233480A1 (zh) | 2019-05-17 | 2020-05-14 | 低介电常数膜及其制备方法 |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022532755A JP2022532755A (ja) | 2022-07-19 |
| JPWO2020233480A5 true JPWO2020233480A5 (https=) | 2023-05-16 |
| JP2022532755A5 JP2022532755A5 (https=) | 2023-05-16 |
| JP7475371B2 JP7475371B2 (ja) | 2024-04-26 |
Family
ID=67631273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021568365A Active JP7475371B2 (ja) | 2019-05-17 | 2020-05-14 | 低誘電率膜及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11904352B2 (https=) |
| EP (1) | EP3971320A4 (https=) |
| JP (1) | JP7475371B2 (https=) |
| KR (1) | KR20220008319A (https=) |
| CN (1) | CN110158052B (https=) |
| TW (1) | TWI743790B (https=) |
| WO (1) | WO2020233480A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110158052B (zh) | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 低介电常数膜及其制备方法 |
| CN110129769B (zh) | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 疏水性的低介电常数膜及其制备方法 |
| US11898248B2 (en) * | 2019-12-18 | 2024-02-13 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
| CN115400930A (zh) * | 2021-05-26 | 2022-11-29 | 江苏菲沃泰纳米科技股份有限公司 | 一种等离子体聚合涂层、制备方法及器件 |
| KR102846208B1 (ko) * | 2022-01-20 | 2025-08-19 | 성균관대학교산학협력단 | 플라즈마 중합체 박막 및 이의 제조 방법 |
| CN114438478B (zh) * | 2022-01-27 | 2024-04-26 | 深圳市技高美纳米科技有限公司 | 硅基纳米涂层的制备方法、硅基纳米涂层和印制电路板组件 |
Family Cites Families (42)
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| US5244730A (en) | 1991-04-30 | 1993-09-14 | International Business Machines Corporation | Plasma deposition of fluorocarbon |
| JP3435186B2 (ja) | 1993-04-15 | 2003-08-11 | 株式会社東芝 | 半導体装置 |
| US6149987A (en) * | 1998-04-07 | 2000-11-21 | Applied Materials, Inc. | Method for depositing low dielectric constant oxide films |
| US6458718B1 (en) | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
| JP3545364B2 (ja) | 2000-12-19 | 2004-07-21 | キヤノン販売株式会社 | 半導体装置及びその製造方法 |
| SG98468A1 (en) | 2001-01-17 | 2003-09-19 | Air Prod & Chem | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
| US6716770B2 (en) * | 2001-05-23 | 2004-04-06 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
| KR20030002993A (ko) | 2001-06-29 | 2003-01-09 | 학교법인 포항공과대학교 | 저유전체 박막의 제조방법 |
| JP3778045B2 (ja) | 2001-10-09 | 2006-05-24 | 三菱電機株式会社 | 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置 |
| US7423166B2 (en) * | 2001-12-13 | 2008-09-09 | Advanced Technology Materials, Inc. | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
| EP1504138A2 (en) * | 2002-05-08 | 2005-02-09 | Applied Materials, Inc. | Method for using low dielectric constant film by electron beam |
| US20040137757A1 (en) * | 2003-01-13 | 2004-07-15 | Applied Materials, Inc. | Method and apparatus to improve cracking thresholds and mechanical properties of low-k dielectric material |
| US7288292B2 (en) | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
| US20040197474A1 (en) | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
| JP4344841B2 (ja) | 2003-05-30 | 2009-10-14 | 独立行政法人産業技術総合研究所 | 低誘電率絶縁膜の形成方法 |
| US7646081B2 (en) | 2003-07-08 | 2010-01-12 | Silecs Oy | Low-K dielectric material |
| US7030468B2 (en) | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
| US7049247B2 (en) | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| US7422776B2 (en) | 2004-08-24 | 2008-09-09 | Applied Materials, Inc. | Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) |
| US7135402B2 (en) | 2005-02-01 | 2006-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing pores of low-k dielectrics using CxHy |
| JP5093479B2 (ja) * | 2005-11-24 | 2012-12-12 | 日本電気株式会社 | 多孔質絶縁膜の形成方法 |
| US20070172666A1 (en) | 2006-01-24 | 2007-07-26 | Denes Ferencz S | RF plasma-enhanced deposition of fluorinated films |
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| TWI510665B (zh) | 2009-02-17 | 2015-12-01 | 東京威力科創股份有限公司 | 使用電漿反應製程來形成氟碳化物層的方法 |
| JP2013520841A (ja) * | 2010-02-25 | 2013-06-06 | アプライド マテリアルズ インコーポレイテッド | プラズマ化学気相堆積による、有機官能基と共にシリコンを含有するハイブリッド前駆体を使用する超低誘電材料 |
| US8178439B2 (en) | 2010-03-30 | 2012-05-15 | Tokyo Electron Limited | Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices |
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| TWI449802B (zh) | 2012-06-06 | 2014-08-21 | Univ Nat Chiao Tung | 掺碳氮化矽薄膜及其製造方法與裝置 |
| US9352891B2 (en) * | 2012-12-28 | 2016-05-31 | Ade, Inc. | Suspension packaging structures and methods of making and using the same |
| US20140183087A1 (en) * | 2012-12-31 | 2014-07-03 | Funai Electric Co., Ltd. | Fluid Level Sensing Tank Materials |
| GB201305500D0 (en) | 2013-03-26 | 2013-05-08 | Semblant Ltd | Coated electrical assembly |
| US9607825B2 (en) | 2014-04-08 | 2017-03-28 | International Business Machines Corporation | Hydrogen-free silicon-based deposited dielectric films for nano device fabrication |
| KR20160029985A (ko) | 2014-09-05 | 2016-03-16 | 성균관대학교산학협력단 | 유전체에 균일하게 플라즈마를 발생시키는 방법 |
| CN105280816A (zh) | 2015-09-22 | 2016-01-27 | 复旦大学 | 一种使用等离子体交联技术制备有机场效应晶体管介电层的方法 |
| CN106291911B (zh) | 2016-08-10 | 2019-06-11 | 华南师范大学 | 复合层结构的疏水性介电层、其制备方法和电润湿器件 |
| CN106496529B (zh) | 2016-11-17 | 2019-01-18 | 北京航空航天大学 | 一种低介电常数二乙炔基聚合物、其制备方法及其用途 |
| CN106958012A (zh) | 2017-05-21 | 2017-07-18 | 无锡荣坚五金工具有限公司 | 一种基材运动式等离子体放电制备纳米涂层的设备及方法 |
| CN107587120B (zh) | 2017-08-23 | 2018-12-18 | 江苏菲沃泰纳米科技有限公司 | 一种具有调制结构的高绝缘纳米防护涂层的制备方法 |
| CN109277269B (zh) | 2018-10-24 | 2020-07-14 | 江苏菲沃泰纳米科技有限公司 | 一种环氧纳米涂层及其制备方法 |
| CN110158052B (zh) * | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 低介电常数膜及其制备方法 |
| CN110129769B (zh) | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 疏水性的低介电常数膜及其制备方法 |
-
2019
- 2019-05-17 CN CN201910413247.9A patent/CN110158052B/zh active Active
-
2020
- 2020-05-14 JP JP2021568365A patent/JP7475371B2/ja active Active
- 2020-05-14 EP EP20809129.8A patent/EP3971320A4/en active Pending
- 2020-05-14 KR KR1020217040802A patent/KR20220008319A/ko not_active Abandoned
- 2020-05-14 US US17/595,436 patent/US11904352B2/en active Active
- 2020-05-14 WO PCT/CN2020/090119 patent/WO2020233480A1/zh not_active Ceased
- 2020-05-18 TW TW109116440A patent/TWI743790B/zh active
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