JPWO2020153449A1 - 静電チャック - Google Patents
静電チャック Download PDFInfo
- Publication number
- JPWO2020153449A1 JPWO2020153449A1 JP2020568208A JP2020568208A JPWO2020153449A1 JP WO2020153449 A1 JPWO2020153449 A1 JP WO2020153449A1 JP 2020568208 A JP2020568208 A JP 2020568208A JP 2020568208 A JP2020568208 A JP 2020568208A JP WO2020153449 A1 JPWO2020153449 A1 JP WO2020153449A1
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- Prior art keywords
- hole
- substrate
- electrostatic chuck
- porous member
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims description 24
- 238000001179 sorption measurement Methods 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Engineering (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
Description
該基体の内部に位置する静電吸着用の電極と、
前記基体の他方の主面に位置する接合材と、
該接合材により前記基体の他方の主面に接合された支持体と、
前記試料保持面から前記他方の主面まで前記基体を貫通する第1貫通孔と、
該第1貫通孔に連続し、前記他方の主面側から前記支持体を貫通する第2貫通孔と、
該第2貫通孔の内部に位置し、前記他方の主面に固定された多孔質部材と、を備えており、
前記第2貫通孔のうち前記基体に臨む開口の開口径は、前記第1貫通孔の径よりも大きく、
前記第2貫通孔の前記開口と前記電極とは、前記試料保持面に平行な方向にずれて位置している構成である。
1a 第1面
1b 第2面
2 支持体
2a 第1面
2b 第2面
3 接合材
5 多孔質部材
6 吸着電極
7 第2貫通孔
8 凹部
9 第1貫通孔
10 スリーブ
11 接着材
12 耐プラズマ性部材
100 試料保持具
Claims (6)
- 一方の主面が試料保持面である板状の基体と、
該基体の内部に位置する静電吸着用の電極と、
前記基体の他方の主面に位置する接合材と、
該接合材により前記基体の他方の主面に接合された支持体と、
前記試料保持面から前記他方の主面まで前記基体を貫通する第1貫通孔と、
該第1貫通孔に連続し、前記他方の主面側から前記支持体を貫通する第2貫通孔と、
該第2貫通孔の内部に位置し、前記他方の主面に固定された多孔質部材と、を備えており、
前記第2貫通孔のうち前記基体に臨む開口の開口径は、前記第1貫通孔の径よりも大きく、
前記第2貫通孔の前記開口と前記電極とは、前記試料保持面に平行な方向にずれて位置していることを特徴とする静電チャック。 - 前記第2貫通孔の内部に位置し、前記多孔質部材を囲む筒状部材をさらに備えていることを特徴とする請求項1に記載の静電チャック。
- 前記基体は、前記他方の主面に凹部を有し、
前記多孔質部材は、前記凹部に固定されていることを特徴とする請求項1または請求項2に記載の静電チャック。 - 前記多孔質部材は、前記基体よりも熱伝導率が高い接着材によって、前記凹部に固定されていることを特徴とする請求項3に記載の静電チャック。
- 前記凹部と前記電極とは、前記試料保持面に平行な方向にずれて位置していることを特徴とする請求項3または請求項4に記載の静電チャック。
- 前記凹部は壁面を有し、
該壁面に耐プラズマ性部材が位置していることを特徴とする請求項3乃至請求項5のいずれかに記載の静電チャック。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019009961 | 2019-01-24 | ||
JP2019009961 | 2019-01-24 | ||
PCT/JP2020/002411 WO2020153449A1 (ja) | 2019-01-24 | 2020-01-23 | 静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020153449A1 true JPWO2020153449A1 (ja) | 2021-11-25 |
JP7083923B2 JP7083923B2 (ja) | 2022-06-13 |
Family
ID=71736836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020568208A Active JP7083923B2 (ja) | 2019-01-24 | 2020-01-23 | 静電チャック |
Country Status (5)
Country | Link |
---|---|
US (2) | US11842915B2 (ja) |
JP (1) | JP7083923B2 (ja) |
KR (2) | KR20240005185A (ja) |
CN (1) | CN113228496B (ja) |
WO (1) | WO2020153449A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7382978B2 (ja) | 2021-02-04 | 2023-11-17 | 日本碍子株式会社 | 半導体製造装置用部材及びプラグ |
KR20230147691A (ko) * | 2021-03-25 | 2023-10-23 | 교세라 가부시키가이샤 | 정전 척 |
JP7255659B1 (ja) | 2021-11-25 | 2023-04-11 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP7499955B2 (ja) | 2022-06-30 | 2024-06-14 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP7494973B1 (ja) | 2023-03-27 | 2024-06-04 | Toto株式会社 | 静電チャック |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09134951A (ja) * | 1995-09-06 | 1997-05-20 | Ngk Insulators Ltd | 静電チャック |
JP2005268654A (ja) * | 2004-03-19 | 2005-09-29 | Ngk Spark Plug Co Ltd | 静電チャック |
WO2006001425A1 (ja) * | 2004-06-28 | 2006-01-05 | Kyocera Corporation | 静電チャック |
JP2006344766A (ja) * | 2005-06-09 | 2006-12-21 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP2011222977A (ja) * | 2010-03-26 | 2011-11-04 | Toto Ltd | 静電チャック |
JP2013232640A (ja) * | 2012-04-27 | 2013-11-14 | Ngk Insulators Ltd | 半導体製造装置用部材 |
JP2013243267A (ja) * | 2012-05-21 | 2013-12-05 | Shinko Electric Ind Co Ltd | 静電チャック、静電チャックの製造方法 |
JP2014209615A (ja) * | 2013-03-29 | 2014-11-06 | Toto株式会社 | 静電チャック |
WO2016132909A1 (ja) * | 2015-02-18 | 2016-08-25 | 住友大阪セメント株式会社 | 静電チャック装置及び半導体製造装置 |
WO2017126534A1 (ja) * | 2016-01-19 | 2017-07-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2017162899A (ja) * | 2016-03-08 | 2017-09-14 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2017213714A1 (en) * | 2016-06-07 | 2017-12-14 | Applied Materials, Inc. | High power electrostatic chuck with aperture-reducing plug in a gas hole |
JP2018101773A (ja) * | 2016-12-16 | 2018-06-28 | 日本特殊陶業株式会社 | 保持装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349140A (ja) * | 1999-06-01 | 2000-12-15 | Toto Ltd | 静電チャックを用いた被処理体の処理および搬送方法 |
TW561515B (en) | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
JP2003179128A (ja) * | 2001-12-11 | 2003-06-27 | Ngk Spark Plug Co Ltd | 静電チャック |
JP4397271B2 (ja) | 2003-05-12 | 2010-01-13 | 東京エレクトロン株式会社 | 処理装置 |
CN1310285C (zh) | 2003-05-12 | 2007-04-11 | 东京毅力科创株式会社 | 处理装置 |
US20090086401A1 (en) | 2007-09-28 | 2009-04-02 | Intevac, Inc. | Electrostatic chuck apparatus |
KR101413763B1 (ko) * | 2008-10-22 | 2014-07-02 | 주식회사 뉴파워 프라즈마 | 서셉터 어셈블리 |
JP3154629U (ja) * | 2009-08-04 | 2009-10-22 | 日本碍子株式会社 | 静電チャック |
KR102007042B1 (ko) * | 2012-09-19 | 2019-08-02 | 도쿄엘렉트론가부시키가이샤 | 박리 장치 |
JP6428456B2 (ja) * | 2014-04-09 | 2018-11-28 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2017012653A1 (en) * | 2015-07-21 | 2017-01-26 | Curetis Gmbh | Genetic testing for predicting resistance of gram-negative proteus against antimicrobial agents |
US10741425B2 (en) * | 2017-02-22 | 2020-08-11 | Lam Research Corporation | Helium plug design to reduce arcing |
KR20180135152A (ko) | 2017-06-09 | 2018-12-20 | 삼성전자주식회사 | 정전 척, 그를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
JP6489277B1 (ja) | 2018-03-14 | 2019-03-27 | Toto株式会社 | 静電チャック |
-
2020
- 2020-01-23 CN CN202080007377.3A patent/CN113228496B/zh active Active
- 2020-01-23 KR KR1020237044511A patent/KR20240005185A/ko active Application Filing
- 2020-01-23 US US17/418,308 patent/US11842915B2/en active Active
- 2020-01-23 WO PCT/JP2020/002411 patent/WO2020153449A1/ja active Application Filing
- 2020-01-23 KR KR1020217019392A patent/KR102618849B1/ko active IP Right Grant
- 2020-01-23 JP JP2020568208A patent/JP7083923B2/ja active Active
-
2023
- 2023-11-02 US US18/500,308 patent/US20240063046A1/en active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09134951A (ja) * | 1995-09-06 | 1997-05-20 | Ngk Insulators Ltd | 静電チャック |
JP2005268654A (ja) * | 2004-03-19 | 2005-09-29 | Ngk Spark Plug Co Ltd | 静電チャック |
WO2006001425A1 (ja) * | 2004-06-28 | 2006-01-05 | Kyocera Corporation | 静電チャック |
JP2006344766A (ja) * | 2005-06-09 | 2006-12-21 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP2011222977A (ja) * | 2010-03-26 | 2011-11-04 | Toto Ltd | 静電チャック |
JP2013232640A (ja) * | 2012-04-27 | 2013-11-14 | Ngk Insulators Ltd | 半導体製造装置用部材 |
JP2013243267A (ja) * | 2012-05-21 | 2013-12-05 | Shinko Electric Ind Co Ltd | 静電チャック、静電チャックの製造方法 |
JP2014209615A (ja) * | 2013-03-29 | 2014-11-06 | Toto株式会社 | 静電チャック |
WO2016132909A1 (ja) * | 2015-02-18 | 2016-08-25 | 住友大阪セメント株式会社 | 静電チャック装置及び半導体製造装置 |
WO2017126534A1 (ja) * | 2016-01-19 | 2017-07-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2017162899A (ja) * | 2016-03-08 | 2017-09-14 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2017213714A1 (en) * | 2016-06-07 | 2017-12-14 | Applied Materials, Inc. | High power electrostatic chuck with aperture-reducing plug in a gas hole |
JP2018101773A (ja) * | 2016-12-16 | 2018-06-28 | 日本特殊陶業株式会社 | 保持装置 |
Also Published As
Publication number | Publication date |
---|---|
CN113228496A (zh) | 2021-08-06 |
KR102618849B1 (ko) | 2023-12-28 |
JP7083923B2 (ja) | 2022-06-13 |
US11842915B2 (en) | 2023-12-12 |
US20240063046A1 (en) | 2024-02-22 |
KR20240005185A (ko) | 2024-01-11 |
US20210391204A1 (en) | 2021-12-16 |
KR20210095176A (ko) | 2021-07-30 |
WO2020153449A1 (ja) | 2020-07-30 |
CN113228496B (zh) | 2024-08-20 |
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