CN113228496A - 静电卡盘 - Google Patents
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Abstract
具备:具有试样保持面的绝缘基体(1);和与绝缘基体(1)接合的支承体(2),设置于绝缘基体(1)的第1贯通孔(9)与设置于支承体(2)的第2贯通孔(7)连通并构成气体流入孔。在第2贯通孔(7)设置多孔质构件(5)。第2贯通孔(7)之中面对绝缘基体1的一侧的开口(基体侧开口)的开口直径比第1贯通孔(9)的直径大,第2贯通孔(7)的开口和吸附电极(6)在与试样保持面平行的方向上错开配置。即,在俯视下,成为吸附电极(6)和第2贯通孔(7)不重复的结构。
Description
技术领域
本公开涉及在半导体集成电路的制造工序或液晶显示装置的制造工序等中使用的保持半导体晶片等试样的静电卡盘。
背景技术
作为在半导体制造装置等中使用的试样保持工具,例如已知有专利文献1所记载的静电卡盘。
在先技术文献
专利文献
专利文献1:日本特开2014-209615号公报
发明内容
本公开的静电卡盘为如下的结构,具备:
板状的基体,一个主面为试样保持面;
静电吸附用的电极,位于该基体的内部;
接合材料,位于所述基体的另一个主面;
支承体,通过该接合材料而与所述基体的另一个主面接合;
第1贯通孔,从所述试样保持面到所述另一个主面贯通所述基体;
第2贯通孔,与该第1贯通孔连续,从所述另一个主面侧贯通所述支承体;以及
多孔质构件,位于该第2贯通孔的内部,被固定于所述另一个主面,
所述第2贯通孔之中面对所述基体的开口的开口直径比所述第1贯通孔的直径大,
所述第2贯通孔的所述开口和所述电极在与所述试样保持面平行的方向上错开配置。
附图说明
图1是第1实施方式的静电卡盘的剖视图。
图2是将图1的区域A所示的多孔质构件周边放大的局部放大剖视图。
图3是第2实施方式的静电卡盘的剖视图。
图4是将图3的区域A所示的多孔质构件周边放大的局部放大剖视图。
图5是将第3实施方式的多孔质构件周边放大的局部放大剖视图。
图6是将第4实施方式的多孔质构件周边放大的局部放大剖视图。
图7是将第5实施方式的多孔质构件周边放大的局部放大剖视图。
具体实施方式
本公开的目的、特点以及优点,会通过下述的详细说明和附图而变得更加明确。
首先,对本公开的静电卡盘作为基础的静电卡盘进行说明。本公开的静电卡盘作为基础的静电卡盘具备:具有内部电极的电介质基板和金属制的基座板,设置有贯通电介质基板和基座板的贯通孔,在基座板的贯通孔配置陶瓷多孔体。
以下,参照附图对静电卡盘100进行说明。图1是示出第1实施方式的静电卡盘的剖视图。图2是将图1的区域A所示的多孔质构件周边放大的局部放大剖视图。静电卡盘100具备绝缘基体1、支承体2、接合材料3、多孔质构件5和吸附电极6。
绝缘基体1是具有第1面(一个主面)1a以及与该第1面1a相反的一侧的第2面(另一个主面)1b的陶瓷体,第1面1a为保持试样的试样保持面。绝缘基体1是板状的构件,外形形状没有限定,例如也可以是圆板状或方板状。
绝缘基体1例如包含陶瓷材料。作为陶瓷材料,例如能够设为氧化铝、氮化铝、氮化硅或氧化钇等。绝缘基体1的外形尺寸例如能够将直径(或边长)设为200~500mm,将厚度设为2~15mm。
作为使用绝缘基体1来保持试样的方法,能够使用各种各样的方法。本例的静电卡盘100是通过静电力保持试样的静电卡盘。因此,静电卡盘100在绝缘基体1的内部具备吸附电极6。吸附电极6具有两种电极。两个电极的一个与电源的正极连接,另一个与负极连接。两个电极例如分别为大致半圆板状,位于绝缘基体1的内部,以使得半圆的弦彼此对置。通过它们两个电极结合,吸附电极6整体的外形成为圆形形状。基于该吸附电极6的整体的圆形形状的外形的中心能够设定为与同样为圆形形状的陶瓷体的外形的中心相同。吸附电极6的形状例如可以是带状、弯折状、格子状(网格状)等。吸附电极6例如具有金属材料。作为金属材料,例如具有铂、钨或钼等金属材料。
静电卡盘100例如在比作为试样保持面的绝缘基体1的第1面1a靠上方处,使等离子体产生而使用。等离子体例如能够通过对设置在外部的多个电极间施加高频,使位于电极间的气体激发而产生。
支承体2为金属制,是用于支承绝缘基体1的构件。作为金属材料,例如能够使用铝。支承体2的外形形状没有特别限定,也可以是圆形形状或四边形形状。支承体2的外形尺寸例如能够将直径(或边长)设为200~500mm,将厚度设为10~100mm。支承体2可以是与绝缘基体1相同的外形形状,也可以是不同的外形形状,可以是相同的外形尺寸,也可以是不同的外形尺寸。
支承体2与绝缘基体1经由接合材料3而接合。具体地,支承体2的第1面2a与绝缘基体1的第2面1b通过接合材料3而接合。作为接合材料3,例如能够使用树脂材料的粘接剂。作为树脂材料,例如能够使用硅酮树脂等。
如图2所示,在绝缘基体1设置有从第1面1a到第2面1b贯通的第1贯通孔9。此外,在支承体2设置有从第1面(一个主面)2a到与该第1面2a相反的一侧的第2面(另一个主面)2b贯通的第2贯通孔7。第2贯通孔7和第1贯通孔9连通,成为从绝缘基体1的第1面1a通过接合材料3而连续到支承体2的第2面2b的孔。第2贯通孔7以及第1贯通孔9例如作为用于使氦等气体从支承体2的第2面2b侧向作为试样保持面的绝缘基体1的第1面1a侧流入的气体流入孔而被设置。
在绝缘基体1的至少一部分,第1贯通孔9的孔径变得比支承体2的第2贯通孔7的孔径小。在本例的静电卡盘100中,详细后述,第2贯通孔7是从支承体2的第2面2b到第1面2a而孔径不同的圆柱状。此外,在绝缘基体1中,第1贯通孔9是从绝缘基体1的第2面1b到第1面1a而孔径一定的圆柱状。
多孔质构件5是为了在比作为试样保持面的第1面1a靠上方产生等离子体时、使等离子体不会通过第1贯通孔9进入到支承体2侧而设置的。作为多孔质构件5,例如能够使用氧化铝等陶瓷多孔质材料。多孔质构件5位于第2贯通孔7的内部。多孔质构件5具有能够从上表面向下表面流过气体的程度的气孔率。因此,通过使多孔质构件5位于第2贯通孔7的内部,从而第1贯通孔9中流过气体但降低等离子体到达支承体2侧的可能性。作为多孔质构件5的气孔率,例如能够设定为40~60%。
吸附电极6在第1贯通孔9的周边部分例如设置圆形形状的缺口(间隙)。在本实施方式中,第2贯通孔7之中面对绝缘基体1的一侧的开口(基体侧开口)的开口直径比第1贯通孔9的直径大,第2贯通孔7的开口和吸附电极6在与试样保持面平行的方向上错开配置。即,在俯视下(在与试样保持面垂直的方向上观察),只要吸附电极6和第2贯通孔7不重复即可。例如,也可以吸附电极6的间隙的直径比第2贯通孔7的所述开口直径大,在吸附电极6为带状等的情况下,也可以与相邻的电极的间隔比所述开口直径大。多孔质构件5位于该第2贯通孔7的开口。通过将第2贯通孔7的开口和吸附电极6错开,能够使多孔质构件5与吸附电极6的距离比本公开的静电卡盘作为基础的结构更远。若多孔质构件5与吸附电极6的距离变远,则与本公开的静电卡盘作为基础的结构相比,更难以产生绝缘损伤。距离越远(间隙的直径变得越大)绝缘损伤也越难以产生,但是吸附电极6的面积变小该相应的量。例如,在俯视下,将吸附电极6与第2贯通孔7的距离设为0.5mm~4mm。
关于第2贯通孔7的与基体侧开口相反的一侧的开口,大小等没有特别限定,但是在本实施方式中,相反的一侧的开口的开口直径比基体侧开口小。多孔质构件5为柱状(圆柱状),第2贯通孔7是柱状的孔以使得该多孔质构件5位于绝缘基体1侧,与此相连地小径的柱状的孔连续到相反的一侧。即,第2贯通孔7成为直径不同的两个柱状的孔同轴地相连的形状。
图3是第2实施方式的静电卡盘的剖视图。图4是将图3的区域A所示的多孔质构件周边放大的局部放大剖视图。本实施方式的静电卡盘100在还具备位于第2贯通孔7的套筒10这方面,与第1实施方式不同,关于与第1实施方式同样的结构,省略详细的说明。
套筒10具有沿着第2贯通孔7的中心轴线延伸的圆筒状,是包含绝缘性材料的筒状构件。套筒10在第2贯通孔7的内部空间中,对金属材料露出的内周面进行覆盖。通过将套筒10设置在第2贯通孔7内,套筒10的内部空间与第1贯通孔9连通,构成上述的气体流入孔。多孔质构件5位于套筒10的面对绝缘基体1的一侧的开口部分,多孔质构件5被套筒10包围。由此,即使等离子体到达多孔质构件5,也能够通过套筒10来防止与支承体2的短路、向支承体2的放电等。
本实施方式的第2贯通孔7与第1实施方式不同,是孔径一定的圆柱状。套筒10的外径与第2贯通孔7的孔径相同,与第1实施方式的第2贯通孔7同样地,内部空间形状是直径不同的两个柱状的孔同轴地相连的形状。直径大的孔为绝缘基体1侧,配置有多孔质构件5。
作为构成套筒10的绝缘性材料,例如能够使用陶瓷材料。作为陶瓷材料,例如可列举氧化铝或氮化铝。
本实施方式也与第1实施方式同样地,第2贯通孔7的开口和吸附电极6在与试样保持面平行的方向上错开配置,因此变得难以产生绝缘损伤。第2贯通孔7的开口比第1实施方式大与多孔质构件5的周围的套筒10的厚度相应的量,吸附电极6与多孔质构件5的距离进一步变远。
图5是将第3实施方式的多孔质构件周边放大的局部放大剖视图。在本实施方式中,在绝缘基体1的第2面1b,设置有与套筒10的外径相同直径的圆柱状且向第1面1a侧凹陷的凹部8,这方面与第2实施方式的不同。
凹部8被设置为凹部8的中心轴与第1贯通孔9的中心轴成为同轴。使套筒10的上部比支承体2的第1面2a更向绝缘基体1侧突出,使其嵌入凹部8。由此,能够容易地进行对位,以使得构成气体流入孔的一部分的套筒10的内部空间的中心轴与第1贯通孔9的中心轴成为同轴。此外,由于多孔质构件5的上表面以及套筒10的上表面远离支承体2的第1面2a而配置,所以能够防止与支承体2的短路、向支承体2的放电等。此外,通过设置凹部8,第1贯通孔9的长度变短,能够抑制第1贯通孔9内的等离子体的产生。
图6是将第4实施方式的多孔质构件周边放大的局部放大剖视图。在本实施方式中,多孔质构件5通过粘接材料11而被固定于凹部8,这方面与第3实施方式不同。
在凹部8,将多孔质构件5固定于绝缘基体1的粘接材料11包含导热率比绝缘基体1高的材质,例如能够使用硅酮树脂等。通过用于晶片的处理的等离子体产生的热从绝缘基体1向支承体2传导。凹部8附近由于局部不存在吸附电极6,所以静电吸附力弱,在晶片与绝缘基体1的试样保持面之间产生微小的间隙等,导热性局部地下降。通过对这样的部分使用包含导热率高的材质的粘接材料11,从而能够使导热性局部提高,弥补由静电吸附力弱引起的导热性的下降而使均热性提高。此外,优选粘接材料11不设置在第1贯通孔9的正下方。能够将从第2贯通孔7通过多孔质构件5流动的气体有效率地供给到第1贯通孔9。
图7是将第5实施方式的多孔质构件周边放大的局部放大剖视图。在本实施方式中,凹部8具有在周向上延伸的壁面8a,耐等离子体性构件12位于该壁面8a,这方面与第3实施方式不同。
在本实施方式中,凹部8的直径比套筒10的外径稍微大,在套筒10的嵌入到凹部8的一部分的外周面与凹部8的壁面8a之间设置有耐等离子体性构件12。耐等离子体性构件12位于容易产生应力集中的由凹部的底面与壁面8a形成的凹角。由此,能够进一步抑制绝缘损伤。
耐等离子体性构件12例如能够使用氟性树脂等即使与等离子体接触也难以劣化的树脂材料等材质,将套筒10与凹部8,即套筒10与绝缘基体1粘接固定。
对于第5实施方式的试样保持工具,简单地叙述制造方法。首先,在套筒10的开口安装多孔质构件5,使套筒10嵌入到支承体2的第2贯通孔7内。接着,通过接合材料3将绝缘基体1和支承体2接合。通过粘接材料11来将多孔质构件5固定于绝缘基体1,并且通过耐等离子体性构件12来将套筒10固定于绝缘基体1。
本公开可以是以下的实施方式。
本公开的静电卡盘为如下的结构,具备:板状的基体,一个主面为试样保持面;静电吸附用的电极,位于该基体的内部;接合材料,位于所述基体的另一个主面;支承体,通过该接合材料而与所述基体的另一个主面接合;第1贯通孔,从所述试样保持面到所述另一个主面贯通所述基体;第2贯通孔,与该第1贯通孔连续,从所述另一个主面侧贯通所述支承体;以及多孔质构件,位于该第2贯通孔的内部,被固定于所述另一个主面,所述第2贯通孔之中面对所述基体的开口的开口直径比所述第1贯通孔的直径大,所述第2贯通孔的所述开口和所述电极在与所述试样保持面平行的方向上错开配置。
根据本公开的静电卡盘,能够使设置在支承体的第2贯通孔的开口与基体内的电极的绝缘距离比较长,因此能够抑制绝缘损伤。
符号说明
1:绝缘基体;
1a:第1面;
1b:第2面;
2:支承体;
2a:第1面;
2b:第2面;
3:接合材料;
5:多孔质构件;
6:吸附电极;
7:第2贯通孔;
8:凹部;
9:第1贯通孔;
10:套筒;
11:粘接材料;
12:耐等离子体性构件;
100:试样保持工具。
Claims (6)
1.一种静电卡盘,其特征在于,具备:
板状的基体,一个主面为试样保持面;
静电吸附用的电极,位于该基体的内部;
接合材料,位于所述基体的另一个主面;
支承体,通过该接合材料而与所述基体的另一个主面接合;
第1贯通孔,从所述试样保持面到所述另一个主面贯通所述基体;
第2贯通孔,与该第1贯通孔连续,从所述另一个主面侧贯通所述支承体;以及
多孔质构件,位于该第2贯通孔的内部,被固定于所述另一个主面,
所述第2贯通孔之中面对所述基体的开口的开口直径比所述第1贯通孔的直径大,
所述第2贯通孔的所述开口和所述电极在与所述试样保持面平行的方向上错开配置。
2.根据权利要求1所述的静电卡盘,其特征在于,
所述静电卡盘还具备:筒状构件,位于所述第2贯通孔的内部,包围所述多孔质构件。
3.根据权利要求1或2所述的静电卡盘,其特征在于,
所述基体在所述另一个主面具有凹部,
所述多孔质构件被固定于所述凹部。
4.根据权利要求3所述的静电卡盘,其特征在于,
所述多孔质构件通过导热率比所述基体高的粘接材料而被固定于所述凹部。
5.根据权利要求3或4所述的静电卡盘,其特征在于,
所述凹部和所述电极在与所述试样保持面平行的方向上错开配置。
6.根据权利要求3至5中任一项所述的静电卡盘,其特征在于,
所述凹部具有壁面,
耐等离子体性构件位于该壁面。
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KR20240003742A (ko) * | 2022-06-30 | 2024-01-09 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치용 부재 |
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