CN113169108A - 试样保持工具 - Google Patents
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 17
- 238000001179 sorption measurement Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
本发明提供一种能够降低在绝缘套筒与金属支承体之间产生的热应力的试样保持工具。试样保持工具具备：具有试样保持面的绝缘基体(1)、和与绝缘基体(1)接合的支承体(2)，设置在绝缘基体(1)的贯通孔(9)和设置在支承体(2)的孔部(7)连通并构成气体流入孔。在孔部(7)内配置有筒状的套筒(10)，设置位于套筒(10)的外周面(10a)与孔部(7)的内周面(7a)之间的环状构件(4)。环状构件(4)包围套筒(10)，将套筒(10)固定在支承体(2)。
Description
技术领域
本公开涉及在半导体集成电路的制造工序或液晶显示装置的制造工序等中使用的保持半导体晶片等试样的试样保持工具。
背景技术
作为用于半导体制造装置等的试样保持工具，例如，已知有专利文献1所记载的静电卡盘。专利文献1所记载的静电卡盘具备绝缘体和金属基座，设置有贯通绝缘体和金属基座的贯通孔，在贯通孔配置有覆盖绝缘体与金属基座的交界线部分的绝缘套筒。
在先技术文献
专利文献
专利文献1：日本特开2004-31665号公报
发明内容
本公开的试样保持工具具备：
板状的基体，一个主面为试样保持面，具有从该一个主面连到另一个主面的流路；
支承体，一个主面与所述基体的所述另一个主面接合，具有向该一个主面开口的孔部；
筒状构件，位于该孔部，具有与所述流路连续的贯通孔；以及
环状构件，位于该筒状构件的外周面与所述孔部的内周面之间，
该环状构件包围所述筒状构件，将该筒状构件固定在所述支承体。
附图说明
本发明的目的、特点以及优点，会通过下述的详细说明和附图而变得更加明确。
图1是试样保持工具的剖视图。
图2是对试样保持工具的区域A进行了放大的局部放大剖视图。
图3是示出试样保持工具的其他实施方式的局部放大剖视图。
图4是示出试样保持工具的其他实施方式的局部放大剖视图。
具体实施方式
以下，参照附图对试样保持工具100进行说明。图1是示出本公开的试样保持工具的一个实施方式的剖视图。试样保持工具100具备绝缘基体1、支承体2、接合材料3、环状构件4、多孔质构件5、套筒10。
绝缘基体1是具有第1面(一个主面)1a以及与该第1面1a相反的一侧的第2面(另一个主面)1b的陶瓷体，第1面1a为保持试样的试样保持面。绝缘基体1是板状的构件，外形形状没有限定，例如可以是圆板状或方板状。
绝缘基体1例如包含陶瓷材料。作为陶瓷材料，例如能够设为氧化铝、氮化铝、氮化硅或氧化钇等。绝缘基体1的外形尺寸例如能够使直径(或边长)为200～500mm，厚度为2～15mm。
作为使用绝缘基体1保持试样的方法，能够使用各种各样的方法。本例的试样保持工具100是通过静电力保持试样的静电卡盘。因此，试样保持工具100在绝缘基体1的内部具备吸附电极6。吸附电极6具有两个电极。两个电极的一个与电源的正极连接，另一个与负极连接。两个电极分别为大致半圆板状，位于绝缘基体1的内部，使得半圆的弦彼此对置。这两个电极结合，从而吸附电极6整体的外形成为圆形形状。基于该吸附电极6的整体的圆形形状的外形的中心能够同样地设定为与圆形形状的陶瓷体的外形的中心相同。吸附电极6例如具有金属材料。作为金属材料，例如，具有铂、钨或钼等金属材料。
试样保持工具100例如在比作为试样保持面的绝缘基体1的第1面1a靠上方，使等离子体产生而被使用。等离子体例如能够通过对设置在外部的多个电极间施加高频，使位于电极间的气体激发而产生。
支承体2为金属制，是用于支承绝缘基体1的构件。作为金属材料，例如能够使用铝。支承体2的外形形状没有特别限定，可以是圆形形状或四边形形状。支承体2的外形尺寸例如能够使直径(或边长)为200～500mm，厚度为10～100mm。支承体2可以是与绝缘基体1相同的外形形状，也可以是不同的外形形状，可以是相同的外形尺寸，也可以是不同的外形尺寸。
支承体2和绝缘基体1经由接合材料3接合。具体地，支承体2的第1面2a和绝缘基体1的第2面1b通过接合材料3接合。作为接合材料3，例如能够使用树脂材料的粘接剂。作为树脂材料，例如能够使用硅酮树脂等。
如图2、3所示，在支承体2设置有从第1面(一个主面)2a贯通到与该第1面2a相反的一侧的第2面(另一个主面)2b的孔部7。此外，在绝缘基体1设置有从第1面1a贯通到第2面1b的贯通孔9。孔部7与贯通孔9连通，成为从绝缘基体1的第1面1a通过接合材料3连续到支承体2的第2面2b的孔。孔部7以及贯通孔9例如设置为用于使氦等气体从支承体2的第2面2b侧流入作为试样保持面的绝缘基体1的第1面1a侧的气体流入孔。
贯通孔9在绝缘基体1的至少一部分中的孔径比支承体2的孔部7的孔径小。在本例的试样保持工具100中，孔部7是从支承体2的第2面2b到第1面2a的孔径一定的圆柱状。此外，在绝缘基体1中，贯通孔9是从绝缘基体1的第2面1b到第1面1a的孔径一定的圆柱状。另外，在本实施方式中，在绝缘基体1的第2面1b，为了与支承体2的孔部7连通，设置有与孔部7相同直径的圆柱状且向第1面1a侧凹陷的凹处8。
试样保持工具100具备位于孔部7的套筒10。套筒10具有沿着孔部7的中心轴线延伸的圆筒状，是包含绝缘性材料的筒状构件。套筒10在孔部7的内部空间中，覆盖金属材料露出的内周面。通过将套筒10设置在孔部7内，套筒10的内部空间与贯通孔9会连通，从而构成上述的气体流入孔。
作为构成套筒10的绝缘性材料，例如能够使用陶瓷材料。作为陶瓷材料，例如可列举氧化铝或氮化铝。
多孔质构件5是当在比作为试样保持面的第1面1a靠上方使等离子体产生时，为了不使等离子体通过贯通孔9进入到支承体2侧而设置。作为多孔质构件5，例如能够使用氧化铝等陶瓷多孔质材料。多孔质构件5位于孔部7的内部。多孔质构件5具有能够使气体从上面流到下面的程度的气孔率。因此，通过使多孔质构件5位于孔部7的内部，在使气体在贯通孔9中流动的同时降低等离子体到达支承体2侧的担忧。作为多孔质构件5的气孔率，例如能够设定为40～60％。
此外，套筒10的上端的内径也可以比下端的内径大。由此，能够使多孔质构件5被套筒10包围地位于套筒10的上端侧。即使等离子体到达至多孔质构件5，也能够通过套筒10防止与支承体2的短路。
为了试验、处理，存在对保持的试样进行加热的情况，但是在以往的静电卡盘中，由于在绝缘套筒和金属基座中热膨胀率不同，所以因在绝缘套筒与金属支承体之间产生的热应力，产生了绝缘套筒的破损等。
在本实施方式中，设置有位于套筒10的外周面10a与孔部7的内周面7a之间的环状构件4。环状构件4包围套筒10，将套筒10固定在支承体2。该环状构件4外嵌在套筒10，以使环的中心轴线与贯通孔9以及套筒10的中心轴线平行或一致。关于外嵌在套筒10的状态的环状构件4，其外径比孔部7的内径稍微大。在嵌入到孔部7内的状态下，套筒10通过环状构件4而被固定在孔部7的内周面7a。在套筒10的外周面10a与孔部7的内周面7a之间存在间隙，外周面10a与内周面7a被保持为非接触。由此，即使在试验时、试样的处理时支承体2被加热的情况下，也能够通过环状构件4降低在套筒10的外周面10a与孔部7的内周面7a之间产生的热应力。
作为构成环状构件4的绝缘材料，只要是弹性模量比套筒10以及支承体2小且对等离子体具有耐性就能够使用，例如为氟性树脂。环状构件4的形状为环状，例如，与中心轴线平行的切断面的剖面形状为圆形形状。另外，剖面形状并不限定于圆形，也可以是矩形形状、多边形形状。
环状构件4除了具有上述的热应力降低效果以外，还具有等离子体产生用气体漏出到套筒10的外周面10a与孔部7的内周面7a之间时的密封效果。如上所述，若支承体2为金属制，套筒10为陶瓷制，则在外周面10a与内周面7a容易形成微小的间隙，存在产生气体的泄漏的情况。通过设置环状构件4，能够将外周面10a与内周面7a之间密封。
套筒10在外周面10a具有凹部11，环状构件4位于该凹部11。外嵌在套筒10的环状构件4可能在外周面10a上在轴线方向上位置偏移。通过在套筒10设置凹部11，将环状构件4固定在凹部11的位置，从而防止位置偏移。
孔部7遍及支承体2的整面而设置，能够将等离子体产生用气体均匀地供给到绝缘基体1的第1面1a。环状构件4具有密封功能，能够预留要漏出的气体。在环状构件4的位置在各个孔部7中偏移的情况下，漏出的气体的量产生偏差，供给到第1面1a的气体的量在每个孔部7中产生偏差。在套筒10预先设置凹部11，在多个套筒10中，使凹部11的位置均为相同。由此，使环状构件4的位置一致，能够使从各孔部7供给到第1面1a的气体的量均匀。
图3、4是示出试样保持工具的其他实施方式的局部放大剖视图。在以下的各实施方式中，在套筒10的外周面10a与孔部7的内周面7a之间设置有树脂构件12。对于树脂构件12以外的结构，由于与在图1、2中示出的上述实施方式的试样保持工具100相同，所以省略说明。
在图3所示的实施方式中，孔部7的内周面7a从向绝缘基体1开口的部位到与环状构件4相接的部位为止被树脂构件12覆盖。等离子体产生用气体在漏出到套筒10的外周面10a与孔部7的内周面7a之间的情况下，从多孔质构件5附近漏出的可能性高。因通过这样的气体的泄漏而产生的等离子体，与孔部7的内周面7a短路。通过用树脂构件12来覆盖孔部7的内周面7a中的上部侧，能够降低短路。
即使填埋了套筒10的外周面10a与孔部7的内周面7a之间，由于树脂构件12的弹性模量比套筒10以及支承体2小，所以也不会阻碍热应力的降低效果。
在图4所示的实施方式中，孔部7的内周面7a整体被树脂构件12覆盖。由于等离子体产生用气体的泄漏并不一定在上部侧产生，所以通过用树脂构件12来覆盖孔部7的内周面7a的整体，能够降低短路。与上述同样地，即使填埋了套筒10的外周面10a与孔部7的内周面7a之间，由于树脂构件12的弹性模量比套筒10以及支承体2小，所以也不会阻碍热应力的降低效果。
树脂构件12只要是能够接合套筒10和支承体2的树脂材料，就能够使用。此外，也能够使树脂构件12的树脂材料为与接合支承体2和绝缘基体1的接合材料3相同的树脂材料。作为树脂材料，例如能够使用硅酮树脂等。通过设为相同的树脂材料，能够抑制树脂构件12与接合材料3的界面处的剥离等的产生。
通过在套筒10的外周面10a与孔部7的内周面7a之间设置树脂构件12，套筒10和环状构件4被树脂构件12固定。如上所述，树脂构件12例如为硅酮树脂等，环状构件4为氟性树脂，树脂构件12的弹性模量比环状构件4小。由此，不会阻碍由环状构件4带来的热应力的缓和效果。
本公开能够在不脱离其精神或主要特征的情况下以其他各种方式实施。因此，前述的实施方式在所有的方面只不过仅仅是例示，本发明的范围是权利要求书所示的范围，丝毫不约束于说明书正文。进而，属于权利要求书的变形、变更全部在本发明的范围内。
符号说明
1：绝缘基体；
1a：第1面；
1b：第2面；
2：支承体；
2a：第1面；
2b：第2面；
3：接合材料；
4：环状构件；
5：多孔质构件；
6：吸附电极；
7：孔部；
7a：内周面；
8：凹处；
9：贯通孔；
10：套筒；
10a：外周面；
11：凹部；
12：树脂构件；
100：试样保持工具。
Claims (8)
1.一种试样保持工具，其特征在于，具备：
板状的基体，一个主面为试样保持面，具有从该一个主面连到另一个主面的流路；
支承体，一个主面与所述基体的所述另一个主面接合，具有向该一个主面开口的孔部；
筒状构件，位于该孔部，具有与所述流路连续的贯通孔；以及
环状构件，位于该筒状构件的外周面与所述孔部的内周面之间，
该环状构件包围所述筒状构件，将该筒状构件固定在所述支承体。
2.根据权利要求1所述的试样保持工具，其特征在于，
所述环状构件的弹性模量比所述筒状构件以及所述支承体小。
3.根据权利要求1或2所述的试样保持工具，其特征在于，
所述筒状构件在所述外周面具有凹部，
所述环状构件位于所述凹部。
4.根据权利要求1～3中任一项所述的试样保持工具，其特征在于，
在所述孔部的所述内周面与所述筒状构件的所述外周面之间存在间隙。
5.根据权利要求1～4中任一项所述的试样保持工具，其特征在于，
所述孔部的所述内周面从向所述支承体的所述一个主面开口的部位到与所述环状构件相接的部位为止被树脂构件覆盖。
6.根据权利要求5所述的试样保持工具，其特征在于，
所述孔部的所述内周面的整体被所述树脂构件覆盖。
7.根据权利要求5或6所述的试样保持工具，其特征在于，
所述基体和所述支承体通过由与所述树脂构件相同的材料构成的接合材料而接合。
8.根据权利要求5～7中任一项所述的试样保持工具，其特征在于，
所述筒状构件以及所述环状构件通过所述树脂构件而被固定，
该树脂构件的弹性模量比所述筒状构件以及所述环状构件小。
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| JP7356620B1 (ja) | 2022-08-12 | 2023-10-04 | 日本碍子株式会社 | 半導体製造装置用部材 |
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| US20220028719A1 (en) | 2022-01-27 |
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| JPWO2020111194A1 (ja) | 2021-10-07 |
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