JPWO2020059022A1 - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
- Publication number
- JPWO2020059022A1 JPWO2020059022A1 JP2020503346A JP2020503346A JPWO2020059022A1 JP WO2020059022 A1 JPWO2020059022 A1 JP WO2020059022A1 JP 2020503346 A JP2020503346 A JP 2020503346A JP 2020503346 A JP2020503346 A JP 2020503346A JP WO2020059022 A1 JPWO2020059022 A1 JP WO2020059022A1
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- Prior art keywords
- photoelectric conversion
- compound
- conversion element
- layer
- substrate
- Prior art date
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- Granted
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Images
Classifications
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2077—Sealing arrangements, e.g. to prevent the leakage of the electrolyte
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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Abstract
Description
図1ないし図5は、光電変換素子の構造例を示す図である。図1ないし図3に示す光電変換素子1は、光電変換層10と、封止材11と、化合物層12aと、化合物層12bと、を具備する。図4および図5に示す光電変換素子1は、光電変換層10と、化合物層12aと、化合物層12bと、を具備する。ここでは、光電変換素子1として有機/無機混成ペロブスカイト化合物を用いた太陽電池について主として述べるが、実施形態の光電変換素子は、色素増感太陽電池や、発光素子、光センサ、電磁波センサ、放射線センサ等に適用することも可能である。
図11ないし図14は、光電変換素子の構造例を示す図である。図11および図12に示す光電変換素子1は、光電変換層10と、封止材11と、化合物層12cと、を具備する。図13および図14に示す光電変換素子1は、光電変換層10と、化合物層12cと、を具備する。なお、光電変換層10および封止材11の説明については、第1の実施形態の光電変換素子の説明を適宜援用する。また、第2の実施形態の光電変換素子の構成は第1の実施形態の光電変換素子の構成と適宜組み合わせることができる。
図16は、光電変換素子の構造例を示す図である。図16に示す光電変換素子1は、光電変換層10と、基板11aと、基板11bと、化合物126と、接着層13と、を具備する。図16に示す光電変換素子1は、光電変換層10を有する領域1aと、化合物126を有する領域1bと、接着層13を有する領域1cと、を有する。
図17ないし図20は、光電変換素子の構造例を示す図である。図17ないし図20に示す光電変換素子1は、光電変換層10を有する領域1aと、化合物126を有する領域1bと、接着層13を有する領域1cと、を有する。
厚さが125μmのPEN基板上に、透明電極として厚さが150nmのITO膜を形成した。透明電極側に設ける中間層として酸化ニッケルのナノ粒子の積層体を形成した。
実施例1と同様にして有機無機混成ペロブスカイト光電変換素子を作製した。太陽電池素子の封止用PETフィルムの側に、骨格にウレタン結合を有し、末端にイソシアネート基を有する化合物を塗布し、その上にPETフィルムを貼り合せることでこの化合物層を形成した。骨格にウレタン結合を有し、末端にイソシアネート基を有する化合物には、市販の一液湿気硬化型ポリウレタン材料を使用した。
実施例1と同様にして有機無機混成ペロブスカイト太陽電池素子を作製した。太陽電池素子の基板用PENフィルムの側に、骨格にウレタン結合を有し、末端にイソシアネート基を有する化合物を塗布し、その上にPETフィルムを貼り合せることで化合物層を形成した。骨格にウレタン結合を有し、末端にイソシアネート基を有する化合物には、市販の一液湿気硬化型ポリウレタン材料を使用した。
対向電極としてAgを形成する工程まで、実施例1と同様に実施した。基板用PENフィルムの外周部のみに枠状に接着剤を塗布した。いわゆるダム・フィル方式における、ダム形成工程である。枠状に形成されたダム状の接着剤の内側に、骨格にウレタン結合を有し、末端にイソシアネート基を有する化合物を注入した。いわゆるフィル工程である。その上にPETフィルムを貼り合せることで化合物層を形成した。骨格にウレタン結合を有し、末端にイソシアネート基を有する化合物には、市販の一液湿気硬化型ポリウレタン材料を使用した。以上により、光電変換素子を完成させた。
(比較例1)
Claims (12)
- 光電変換層と、
第1の基材と、前記第1の基材により保持され且つ使用環境において液体状またはゲル状の第1の化合物と、を有する第1の化合物層と、
第2の基材と、前記第2の基材により保持され且つ使用環境において液体状またはゲル状であるとともに前記第1の化合物と隔離された第2の化合物と、を有する第2の化合物層と、
を具備する、光電変換素子。 - 光電変換層と、
第1の基材と、前記第1の基材により保持され且つ2以上の第1の反応性基を含む第1の化合物と、を有する第1の化合物層と、
第2の基材と、前記第2の基材により保持され且つ2以上の第2の反応性基を含むとともに前記第1の化合物と隔離された第2の化合物と、を有する第2の化合物層と、
を具備する光電変換素子であって、
前記第1の化合物と前記第2の化合物は、前記光電変換素子の破損に伴い互いに接触することにより前記第1の反応性基と前記第2の反応性基との重合反応を引き起こして重合体を形成する、光電変換素子。 - 前記第1の反応性基または前記第2の反応性基の一方は、水酸基およびアミン基からなる群より選ばれる少なくとも一つの反応性基を有し、
前記第1の反応性基または前記第2の反応性基の他方は、イソシアネート基を有する、請求項2に記載の光電変換素子。 - 前記第1の化合物層および前記第2の化合物層の少なくとも一つは、水を有する、請求項1ないし請求項3のいずれか一項に記載の光電変換素子。
- 前記第1の化合物と前記第2の化合物が接触することにより発泡または膨張する、請求項1ないし請求項4のいずれか一項に記載の光電変換素子。
- 光電変換素子であって、
光電変換層と、
基材と、前記基材により保持され且つ2以上の反応性基を有するとともに前記光電変換素子の使用環境の物質と隔離された化合物と、を有する化合物層と、を具備し、
前記化合物は、前記光電変換素子の破損に伴い前記使用環境の物質と接触することにより重合反応を引き起こして重合体を形成する、光電変換素子。 - 第1の基板と、
前記第1の基板と接着層を介して接着された第2の基板と、をさらに具備し、
前記第1の基板および前記第2の基板の少なくとも一つは、光を透過し、
前記光電変換層は、前記第1の基板、前記第2の基板、および前記接着層により封止され、
前記化合物は、前記光電変換層と前記接着層との間に設けられる、請求項6に記載の光電変換素子。 - 基板と、
2以上の反応性基を有する第3の化合物と、
接着層と、をさらに具備し、
前記基板および前記化合物層の少なくとも一つは、光を透過し、
前記光電変換層は、前記基板、前記化合物層、および前記接着層により封止され、
前記第3の化合物は、前記光電変換層と前記接着層との間に設けられ、
前記第3の化合物は、前記光電変換素子の破損に伴い前記使用環境の物質と接触することにより重合反応を引き起こして重合体を形成する、請求項6に記載の光電変換素子。 - 前記化合物は、
ウレタン結合を含む骨格と、
イソシアネート基を含む反応性基と、を有する、請求項6または請求項7に記載の光電変換素子。 - 前記化合物および前記第3の化合物は、
ウレタン結合を含む骨格と、
イソシアネート基を含む反応性基と、を有する、請求項8に記載の光電変換素子。 - 前記使用環境の物質は、水または水蒸気である、請求項6ないし請求項10のいずれか一項に記載の光電変換素子。
- 前記光電変換層は、鉛を含有する、請求項1ないし請求項11のいずれか一項に記載の光電変換素子。
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