JPWO2019186323A5 - - Google Patents

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JPWO2019186323A5
JPWO2019186323A5 JP2020510163A JP2020510163A JPWO2019186323A5 JP WO2019186323 A5 JPWO2019186323 A5 JP WO2019186323A5 JP 2020510163 A JP2020510163 A JP 2020510163A JP 2020510163 A JP2020510163 A JP 2020510163A JP WO2019186323 A5 JPWO2019186323 A5 JP WO2019186323A5
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gate
potential
transistor
insulating layer
forming region
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JP2020510163A
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JPWO2019186323A1 (ja
JP7246376B2 (ja
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Priority claimed from PCT/IB2019/052244 external-priority patent/WO2019186323A1/ja
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Priority to JP2023039574A priority Critical patent/JP2023073282A/ja
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Publication of JP7246376B2 publication Critical patent/JP7246376B2/ja
Priority to JP2025157342A priority patent/JP2025186454A/ja
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JP2020510163A 2018-03-29 2019-03-20 記憶装置、および電子機器 Active JP7246376B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023039574A JP2023073282A (ja) 2018-03-29 2023-03-14 半導体装置
JP2025157342A JP2025186454A (ja) 2018-03-29 2025-09-22 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018065571 2018-03-29
JP2018065571 2018-03-29
JP2018169247 2018-09-10
JP2018169247 2018-09-10
PCT/IB2019/052244 WO2019186323A1 (ja) 2018-03-29 2019-03-20 記憶装置、および電子機器

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JP2023039574A Division JP2023073282A (ja) 2018-03-29 2023-03-14 半導体装置

Publications (3)

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JPWO2019186323A1 JPWO2019186323A1 (ja) 2021-04-01
JPWO2019186323A5 true JPWO2019186323A5 (https=) 2022-03-28
JP7246376B2 JP7246376B2 (ja) 2023-03-27

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JP2020510163A Active JP7246376B2 (ja) 2018-03-29 2019-03-20 記憶装置、および電子機器
JP2023039574A Withdrawn JP2023073282A (ja) 2018-03-29 2023-03-14 半導体装置
JP2025157342A Pending JP2025186454A (ja) 2018-03-29 2025-09-22 半導体装置

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JP2023039574A Withdrawn JP2023073282A (ja) 2018-03-29 2023-03-14 半導体装置
JP2025157342A Pending JP2025186454A (ja) 2018-03-29 2025-09-22 半導体装置

Country Status (5)

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US (5) US11404107B2 (https=)
JP (3) JP7246376B2 (https=)
KR (2) KR20200138305A (https=)
CN (2) CN119380776A (https=)
WO (1) WO2019186323A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138305A (ko) 2018-03-29 2020-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
US11440680B2 (en) * 2019-07-09 2022-09-13 United States Of America As Represented By The Secretary Of The Navy Tether management system for a tethered UAV
JP2021100025A (ja) * 2019-12-20 2021-07-01 株式会社半導体エネルギー研究所 撮像装置、撮像装置の駆動方法
CN116194926A (zh) * 2020-09-18 2023-05-30 株式会社半导体能源研究所 半导体装置及电子设备
US12466585B2 (en) * 2022-06-22 2025-11-11 Airhive Inc. Unmanned aerial vehicle (UAV) for facilitating aerial deliveries of cargo
US20260001667A1 (en) * 2022-06-22 2026-01-01 Airhive Inc. Unmanned aerial vehicle (uav) for facilitating aerial deliveries of cargo
CN115240728B (zh) * 2022-07-29 2025-03-28 华中科技大学 一种动态存储器操作方法
JP2024142362A (ja) * 2023-03-30 2024-10-11 エイブリック株式会社 容量素子及び半導体装置
WO2025019818A1 (en) * 2023-07-20 2025-01-23 Micron Technology, Inc. Memory device including memory for neural network

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100565941B1 (ko) 1997-06-16 2006-03-30 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치
JP4534163B2 (ja) 1997-06-16 2010-09-01 エルピーダメモリ株式会社 半導体集積回路装置
DE102004005667B4 (de) * 2004-02-05 2006-02-09 Infineon Technologies Ag Integrierter Halbleiterspeicher mit temperaturabhängiger Spannungserzeugung und Verfahren zum Betrieb
JP4798342B2 (ja) * 2005-03-31 2011-10-19 カシオ計算機株式会社 表示駆動装置及びその駆動制御方法、並びに、表示装置及びその駆動制御方法
US7907137B2 (en) 2005-03-31 2011-03-15 Casio Computer Co., Ltd. Display drive apparatus, display apparatus and drive control method thereof
JP5240534B2 (ja) * 2005-04-20 2013-07-17 カシオ計算機株式会社 表示装置及びその駆動制御方法
JP2009070480A (ja) 2007-09-13 2009-04-02 Nec Electronics Corp 半導体記憶装置
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11605630B2 (en) * 2009-10-12 2023-03-14 Monolithic 3D Inc. 3D integrated circuit device and structure with hybrid bonding
CN104681079B (zh) * 2009-11-06 2018-02-02 株式会社半导体能源研究所 半导体装置及用于驱动半导体装置的方法
US8339837B2 (en) * 2010-08-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR102115344B1 (ko) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9111795B2 (en) * 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US20150123117A1 (en) * 2012-05-14 2015-05-07 Sharp Kabushshiki Kaisha Semiconductor device and method for manufacturing same
TWI643435B (zh) * 2013-08-21 2018-12-01 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
US9054696B2 (en) * 2013-10-12 2015-06-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Gate driving circuit, and array substrate and display panel using the same
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
KR102330412B1 (ko) * 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
KR102331396B1 (ko) * 2014-06-13 2021-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9455337B2 (en) * 2014-06-18 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2016067159A1 (en) * 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Functional panel, method for manufacturing the same, module, data processing device
JP6683503B2 (ja) * 2015-03-03 2020-04-22 株式会社半導体エネルギー研究所 半導体装置
US9589611B2 (en) * 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
JP6717815B2 (ja) 2015-05-28 2020-07-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9935633B2 (en) * 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10501003B2 (en) * 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
JP6584196B2 (ja) * 2015-07-31 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
WO2017051791A1 (ja) * 2015-09-24 2017-03-30 シャープ株式会社 半導体装置およびその製造方法
JP6807725B2 (ja) * 2015-12-22 2021-01-06 株式会社半導体エネルギー研究所 半導体装置、表示パネル、及び電子機器
US9953695B2 (en) * 2015-12-29 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and semiconductor wafer
US20170221899A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System
WO2017130082A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6906978B2 (ja) * 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
US10014325B2 (en) * 2016-03-10 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10032492B2 (en) 2016-03-18 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver IC, computer and electronic device
US10236875B2 (en) * 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
JP2017224676A (ja) * 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ 半導体装置及び表示装置
KR102367787B1 (ko) * 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
KR102458660B1 (ko) * 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2018043643A1 (ja) * 2016-09-02 2018-03-08 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス基板を備えた表示装置
US10147681B2 (en) * 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20210125988A1 (en) * 2017-03-13 2021-04-29 Semiconductors Energy Laboratory Co., Ltd. Semiconductor Device and Method for Manufacturing Semiconductor Device
US10312239B2 (en) * 2017-03-16 2019-06-04 Toshiba Memory Corporation Semiconductor memory including semiconductor oxie
US11152366B2 (en) * 2017-06-08 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
KR102391585B1 (ko) * 2017-08-25 2022-04-28 삼성전기주식회사 커패시터 부품
KR102579972B1 (ko) * 2017-09-05 2023-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US20200343245A1 (en) * 2017-12-06 2020-10-29 Semiconductor Energy Laboratory Co., Ltd. Storage device and electronic device
TWI794340B (zh) * 2017-12-07 2023-03-01 日商半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
JP7160894B2 (ja) 2018-02-23 2022-10-25 株式会社半導体エネルギー研究所 記憶装置
KR20200138305A (ko) * 2018-03-29 2020-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
US10748931B2 (en) * 2018-05-08 2020-08-18 Micron Technology, Inc. Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs
US10657899B2 (en) * 2018-06-22 2020-05-19 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel compensation circuit, driving method for the same and amoled display panel

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