JPWO2019171205A5 - - Google Patents
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- Publication number
- JPWO2019171205A5 JPWO2019171205A5 JP2020504473A JP2020504473A JPWO2019171205A5 JP WO2019171205 A5 JPWO2019171205 A5 JP WO2019171205A5 JP 2020504473 A JP2020504473 A JP 2020504473A JP 2020504473 A JP2020504473 A JP 2020504473A JP WO2019171205 A5 JPWO2019171205 A5 JP WO2019171205A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- insulator
- contact
- region
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 36
- 239000004020 conductor Substances 0.000 claims 25
- 239000013078 crystal Substances 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022144504A JP2022171783A (ja) | 2018-03-06 | 2022-09-12 | 半導体装置 |
| JP2024082375A JP2024103536A (ja) | 2018-03-06 | 2024-05-21 | 半導体装置 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018040042 | 2018-03-06 | ||
| JP2018040041 | 2018-03-06 | ||
| JP2018040046 | 2018-03-06 | ||
| JP2018040046 | 2018-03-06 | ||
| JP2018040041 | 2018-03-06 | ||
| JP2018040042 | 2018-03-06 | ||
| PCT/IB2019/051516 WO2019171205A1 (ja) | 2018-03-06 | 2019-02-26 | 積層体、及び半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022144504A Division JP2022171783A (ja) | 2018-03-06 | 2022-09-12 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019171205A1 JPWO2019171205A1 (ja) | 2021-02-25 |
| JPWO2019171205A5 true JPWO2019171205A5 (https=) | 2022-02-17 |
| JP7142081B2 JP7142081B2 (ja) | 2022-09-26 |
Family
ID=67847021
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020504473A Active JP7142081B2 (ja) | 2018-03-06 | 2019-02-26 | 積層体、及び半導体装置 |
| JP2022144504A Withdrawn JP2022171783A (ja) | 2018-03-06 | 2022-09-12 | 半導体装置 |
| JP2024082375A Withdrawn JP2024103536A (ja) | 2018-03-06 | 2024-05-21 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022144504A Withdrawn JP2022171783A (ja) | 2018-03-06 | 2022-09-12 | 半導体装置 |
| JP2024082375A Withdrawn JP2024103536A (ja) | 2018-03-06 | 2024-05-21 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11387343B2 (https=) |
| JP (3) | JP7142081B2 (https=) |
| KR (1) | KR102740089B1 (https=) |
| CN (1) | CN111819670B (https=) |
| WO (1) | WO2019171205A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102208520B1 (ko) | 2016-07-19 | 2021-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 디스플레이 디바이스들에서 활용되는 지르코늄 산화물을 포함하는 하이-k 유전체 재료들 |
| KR102686124B1 (ko) * | 2021-09-07 | 2024-07-17 | 한양대학교 산학협력단 | 헥사고날 구조를 갖는 준-단배향 igzo 물질막, 및 그 제조방법, 그리고 준-단배향 igzo 물질막이 사용된 반도체 소자 |
| TW202339171A (zh) * | 2021-09-21 | 2023-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| CN115386887A (zh) * | 2022-08-31 | 2022-11-25 | 青岛云路先进材料技术股份有限公司 | 一种非晶、纳米晶合金层叠体切割面的清洗液和清洗方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102089200B1 (ko) * | 2009-11-28 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2011142371A1 (en) * | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN107947763B (zh) * | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| TWI657580B (zh) * | 2011-01-26 | 2019-04-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置及其製造方法 |
| JP5806905B2 (ja) * | 2011-09-30 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8941113B2 (en) * | 2012-03-30 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and manufacturing method of semiconductor element |
| US9048323B2 (en) * | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102099261B1 (ko) * | 2012-08-10 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9263531B2 (en) * | 2012-11-28 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, film formation method thereof, and semiconductor device |
| WO2015125042A1 (en) * | 2014-02-19 | 2015-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
| WO2015145292A1 (en) * | 2014-03-28 | 2015-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
| WO2016092427A1 (en) | 2014-12-10 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6674269B2 (ja) * | 2015-02-09 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| US9653613B2 (en) | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2016225613A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
| US10096631B2 (en) * | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
| JP6811084B2 (ja) * | 2015-12-18 | 2021-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US20170221899A1 (en) * | 2016-01-29 | 2017-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Microcontroller System |
| US10043917B2 (en) * | 2016-03-03 | 2018-08-07 | United Microelectronics Corp. | Oxide semiconductor device and method of manufacturing the same |
| WO2017158465A1 (ja) | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
-
2019
- 2019-02-26 WO PCT/IB2019/051516 patent/WO2019171205A1/ja not_active Ceased
- 2019-02-26 US US16/975,855 patent/US11387343B2/en active Active
- 2019-02-26 CN CN201980017323.2A patent/CN111819670B/zh active Active
- 2019-02-26 JP JP2020504473A patent/JP7142081B2/ja active Active
- 2019-02-26 KR KR1020207028278A patent/KR102740089B1/ko active Active
-
2022
- 2022-06-29 US US17/852,429 patent/US20220336616A1/en not_active Abandoned
- 2022-09-12 JP JP2022144504A patent/JP2022171783A/ja not_active Withdrawn
-
2024
- 2024-05-21 JP JP2024082375A patent/JP2024103536A/ja not_active Withdrawn
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