JPWO2019102570A1 - 半導体装置、半導体部品及び半導体装置の製造方法 - Google Patents
半導体装置、半導体部品及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 13
- 238000004804 winding Methods 0.000 claims abstract description 273
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 19
- 238000001514 detection method Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L28/10—Inductors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/18—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
- G01R15/181—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers using coils without a magnetic core, e.g. Rogowski coils
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/18—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
Description
第一電極と、
第二電極と、
前記第一電極と前記第二電極との間で流れる電流を取り囲むようにして設けられた第一巻線部と、前記第一巻線部の終端部に接続され、前記第一巻線部の終端部から始端部側に向かって戻る第二巻線部と、を含む半導体層と、
を備えてもよい。
前記第二巻線部は前記第一巻線部の周縁外方に配置される、又は、前記第一巻線部は前記第二巻線部の周縁外方に配置されてもよい。
前記第一巻線部と前記第二巻線部は入れ子形状に配置されてもよい。
前記第一巻線部の厚みと第二巻線部の厚みは実質的に同じ値になってもよい。
前記半導体層が、
第一巻線部と、
前記第一巻線部の終端部に接続され、前記第一巻線部の終端部から始端部側に向かって戻る第二巻線部と、を含み、
測定対象を流れる電流を取り囲むようにして設けられてもよい。
半導体層に部分的に第一絶縁膜を形成する工程と、
前記第一絶縁膜を利用してトレンチを形成する工程と、
前記トレンチの内側壁及び内底面に第二絶縁膜を形成する工程と、
前記第二絶縁膜が形成されたトレンチ内及び前記第一絶縁膜上に前記導電性材料を設ける工程と、
前記導電性材料をパターニングすることで、第一巻線部及び第二巻線部を形成する工程と、
前記巻線部及び前記巻戻し線部を第三絶縁膜で覆う工程と、
を備え、
前記第二巻線部が、前記第一巻線部の終端部に接続され、前記第一巻線部の終端部から始端部側に向かって戻ってもよい。
《構成》
本実施の形態で「一方側」とは図2の上方側を意味し、「他方側」とは図2の下方側を意味する。また、図2の上下方向(他方から一方に向かう方向及び一方から他方に向かう方向)を「第一方向」とし、図2の左右方向を「第二方向」とし、図2の紙面表裏方向を「第三方向」とする。第二方向及び第三方向を含む面内方向を「面方向」といい、図2の上方から見た場合を「平面視」という。
次に、本実施の形態による半導体装置100の製造方法の一例について説明する。
次に、上述した構成からなる本実施の形態による作用・効果の一例について説明する。なお、「作用・効果」で説明するあらゆる態様を、上記構成で採用することができる。
次に、本発明の第2の実施の形態について説明する。
次に、本発明の第3の実施の形態について説明する。
次に、本発明の第4の実施の形態について説明する。
次に、本発明の第5の実施の形態について説明する。
10 第一巻線部
50 第二巻線部
61 第一電極
62 第二電極
91 第一絶縁膜
92 第二絶縁膜
93 第三絶縁膜
100 半導体装置
150 半導体部品
Claims (6)
- 第一電極と、
第二電極と、
前記第一電極と前記第二電極との間で流れる電流を取り囲むようにして設けられた第一巻線部と、前記第一巻線部の終端部に接続され、前記第一巻線部の終端部から始端部側に向かって戻る第二巻線部と、を含む半導体層と、
を備えたことを特徴とする半導体装置。 - 前記第二巻線部は前記第一巻線部の周縁外方に配置される、又は、前記第一巻線部は前記第二巻線部の周縁外方に配置されることを特徴とする請求項1に記載の半導体装置。
- 前記第一巻線部と前記第二巻線部は入れ子形状に配置されていることを特徴とする請求項2に記載の半導体装置。
- 前記第一巻線部の厚みと第二巻線部の厚みは実質的に同じ値になっていることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 半導体層を備えた半導体部品であって、
前記半導体層は、
第一巻線部と、
前記第一巻線部の終端部に接続され、前記第一巻線部の終端部から始端部側に向かって戻る第二巻線部と、を含み、
測定対象を流れる電流を取り囲むようにして設けられることを特徴とする半導体部品。 - 半導体層に部分的に第一絶縁膜を形成する工程と、
前記第一絶縁膜を利用してトレンチを形成する工程と、
前記トレンチの内側壁及び内底面に第二絶縁膜を形成する工程と、
前記第二絶縁膜が形成されたトレンチ内及び前記第一絶縁膜上に前記導電性材料を設ける工程と、
前記導電性材料をパターニングすることで、第一巻線部及び第二巻線部を形成する工程と、
前記巻線部及び前記巻戻し線部を第三絶縁膜で覆う工程と、
を備え、
前記第二巻線部は、前記第一巻線部の終端部に接続され、前記第一巻線部の終端部から始端部側に向かって戻ることを特徴とする半導体装置の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2017/042131 WO2019102570A1 (ja) | 2017-11-24 | 2017-11-24 | 半導体装置、半導体部品及び半導体装置の製造方法 |
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JPWO2019102570A1 true JPWO2019102570A1 (ja) | 2020-11-19 |
JP6999692B2 JP6999692B2 (ja) | 2022-01-19 |
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US (1) | US20200373379A1 (ja) |
EP (1) | EP3715869A4 (ja) |
JP (1) | JP6999692B2 (ja) |
CN (1) | CN111448463B (ja) |
WO (1) | WO2019102570A1 (ja) |
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EP3715868A4 (en) * | 2017-11-24 | 2021-06-09 | Shindengen Electric Manufacturing Co., Ltd. | DETECTION SUBSTRATE, ARRANGEMENT AND METHOD FOR MANUFACTURING A DETECTION SUBSTRATE |
JP7319771B2 (ja) * | 2018-10-25 | 2023-08-02 | 新電元工業株式会社 | 電流検出器及びパワーモジュール |
JP2023042675A (ja) * | 2021-09-15 | 2023-03-28 | 株式会社東芝 | センサ |
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US20160154034A1 (en) * | 2014-12-02 | 2016-06-02 | Covidien Lp | Electrosurgical generators and sensors |
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JP2003315373A (ja) * | 2002-04-18 | 2003-11-06 | Toshiba Corp | 電流検出装置及び半導体装置 |
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2017
- 2017-11-24 WO PCT/JP2017/042131 patent/WO2019102570A1/ja unknown
- 2017-11-24 EP EP17933112.9A patent/EP3715869A4/en active Pending
- 2017-11-24 US US16/766,264 patent/US20200373379A1/en not_active Abandoned
- 2017-11-24 JP JP2019556037A patent/JP6999692B2/ja active Active
- 2017-11-24 CN CN201780097071.XA patent/CN111448463B/zh active Active
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JPH06176947A (ja) * | 1992-06-05 | 1994-06-24 | Gec Alsthom T & D Sa | ロゴスキコイル |
JPH10247718A (ja) * | 1997-03-04 | 1998-09-14 | Fuji Electric Co Ltd | 電流検知部付き縦型半導体素子 |
US20160154034A1 (en) * | 2014-12-02 | 2016-06-02 | Covidien Lp | Electrosurgical generators and sensors |
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JP6999692B2 (ja) | 2022-01-19 |
CN111448463B (zh) | 2022-11-25 |
EP3715869A4 (en) | 2021-06-16 |
WO2019102570A1 (ja) | 2019-05-31 |
US20200373379A1 (en) | 2020-11-26 |
CN111448463A (zh) | 2020-07-24 |
EP3715869A1 (en) | 2020-09-30 |
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