JPWO2019009006A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2019009006A1 JPWO2019009006A1 JP2019527594A JP2019527594A JPWO2019009006A1 JP WO2019009006 A1 JPWO2019009006 A1 JP WO2019009006A1 JP 2019527594 A JP2019527594 A JP 2019527594A JP 2019527594 A JP2019527594 A JP 2019527594A JP WO2019009006 A1 JPWO2019009006 A1 JP WO2019009006A1
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- 150000004767 nitrides Chemical class 0.000 claims abstract description 68
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Abstract
Description
本願発明者らは、「背景技術」の欄において記載した従来の半導体装置に関して、以下の問題が生じることを見出した。
[構成]
まず、実施の形態1に係る半導体装置1の構成について、図1を用いて説明する。図1は、本実施の形態に係る半導体装置1の構成を示す断面図である。
ここで、本実施の形態に係る半導体装置の変形例について、図2を用いて説明する。図2は、本変形例に係る半導体装置2の構成を示す断面図である。
続いて、半導体装置1及び2におけるゲート絶縁膜(閾値制御層)50の窒素組成比と、半導体装置1及び2のデバイス特性との関係について説明する。本願発明者らは、図2に示す半導体装置2と同様の構成を有するサンプルであって、ゲート絶縁膜50の窒素組成比を異ならせた5種類のサンプルを試作し、その特性を評価した。
X線源:単色化Al(1486.6eV)
検出領域:50μmφ
検出深さ:約4−5nm(取出角45°)
測定スペクトル:Al2p、O1s、N1s、C1s、Ga2p3/2、Si2s
スパッタ条件:Ar+2.0kV
スパッタ速度:約5nm/min(SiO2換算値)
続いて、実施の形態2について説明する。
続いて、実施の形態3について説明する。
続いて、実施の形態4について説明する。
以上、1つ又は複数の態様に係る半導体装置について、実施の形態に基づいて説明したが、本開示は、これらの実施の形態に限定されるものではない。本開示の主旨を逸脱しない限り、当業者が思いつく各種変形を本実施の形態に施したもの、及び、異なる実施の形態における構成要素を組み合わせて構築される形態も、本開示の範囲内に含まれる。
10 基板
20 バッファ層
30、32 チャネル層
31 2DEG
33 凹部
40、41、43 バリア層
42 ゲートリセス
50、150、350 ゲート絶縁膜
50d、50s 電極形成領域
60d ドレイン電極
60g ゲート電極
60s ソース電極
151 第1絶縁層
152 閾値制御層
153 第2絶縁層
270 スペーサ層
380 絶縁膜
Claims (17)
- 順に積層された窒化物半導体層、ゲート絶縁膜及びゲート電極を有するMIS構造と、
平面視において前記ゲート電極を間に挟むように配置され、各々が前記窒化物半導体層に接触するソース電極及びドレイン電極とを備え、
前記ゲート絶縁膜は、酸窒化膜からなる閾値制御層を含む
半導体装置。 - 前記閾値制御層は、アルミニウムを含有する
請求項1に記載の半導体装置。 - 前記閾値制御層の窒素組成比は、3原子%以上25原子%以下である
請求項1又は2に記載の半導体装置。 - 前記閾値制御層の窒素組成比は、3原子%以上15原子%以下である
請求項3に記載の半導体装置。 - 前記閾値制御層の窒素組成比は、3原子%以上12原子%以下である
請求項3に記載の半導体装置。 - 前記閾値制御層は、アモルファス又は微結晶である
請求項1〜5のいずれか1項に記載の半導体装置。 - 前記閾値制御層では、前記窒化物半導体層から前記ゲート電極に向かって、窒素含有量が減少している
請求項1〜6のいずれか1項に記載の半導体装置。 - 前記ゲート絶縁膜は、さらに、前記閾値制御層の前記ゲート電極側に積層された、酸化膜、窒化膜又は酸窒化膜からなる第1絶縁層を備える
請求項1〜7のいずれか1項に記載の半導体装置。 - 前記ゲート絶縁膜は、さらに、前記閾値制御層の前記窒化物半導体層側に積層された、酸化膜、窒化膜又は酸窒化膜からなる第2絶縁層を備える
請求項1〜8のいずれか1項に記載の半導体装置。 - 前記ゲート絶縁膜は、さらに、
前記閾値制御層の前記ゲート電極側に積層された、酸化膜、窒化膜又は酸窒化膜からなる第1絶縁層と、
前記閾値制御層の前記窒化物半導体層側に積層された、酸化膜、窒化膜又は酸窒化膜からなる第2絶縁層とを備える
請求項1〜7のいずれか1項に記載の半導体装置。 - 前記窒化物半導体層は、GaNとAlxGa1−xN(ただし、0≦x≦1)との積層構造を有する
請求項1〜10のいずれか1項に記載の半導体装置。 - 前記窒化物半導体層には、ゲートリセスが設けられている
請求項1〜11のいずれか1項に記載の半導体装置。 - 前記窒化物半導体層は、
第1窒化物半導体層と、
前記第1窒化物半導体層の前記ゲート電極側に積層され、前記ゲートリセスが設けられた第2窒化物半導体層とを備え、
前記第1窒化物半導体層は、平面視において前記ゲートリセスに重複する位置に設けられ、前記ゲート電極から前記窒化物半導体層に向かう方向に凹んだ凹部を有する
請求項12に記載の半導体装置。 - 前記第2窒化物半導体層は、前記凹部の内面に沿って均一な膜厚で形成されている
請求項13に記載の半導体装置。 - さらに、前記窒化物半導体層と前記ゲート絶縁膜との間に設けられたスペーサ層を備え、
前記スペーサ層は、平面視において、前記ゲート電極と前記ソース電極及び前記ドレイン電極の各々との間に位置している
請求項1〜14のいずれか1項に記載の半導体装置。 - 前記スペーサ層の一部は、平面視において、前記ゲート電極に重複している
請求項15に記載の半導体装置。 - 前記ゲート絶縁膜は、平面視において、前記ゲート電極と前記ソース電極及び前記ドレイン電極の各々との間に設けられていない
請求項1〜16のいずれか1項に記載の半導体装置。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012039164A (ja) * | 2006-03-06 | 2012-02-23 | Sharp Corp | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP2013118377A (ja) * | 2011-12-01 | 2013-06-13 | Power Integrations Inc | パワートランジスタ装置のための多層構造を作製する方法、ヘテロ接合電界効果トランジスタ装置のための多層構造を作製する方法、および窒化物系ヘテロ接合電界効果トランジスタ装置 |
JP2014110402A (ja) * | 2012-12-04 | 2014-06-12 | Rohm Co Ltd | 半導体装置 |
JP2016051775A (ja) * | 2014-08-29 | 2016-04-11 | 豊田合成株式会社 | Mis型半導体装置 |
JP2016539496A (ja) * | 2013-10-15 | 2016-12-15 | 蘇州晶湛半導体有限公司Enkris Semiconductor,Inc. | Iii族窒化物半導体デバイスおよびその製造方法 |
JP2017502519A (ja) * | 2013-12-27 | 2017-01-19 | 蘇州晶湛半導体有限公司Enkris Semiconductor,Inc. | エンハンスメント型デバイスの製造方法およびエンハンスメント型デバイス |
JP2017073500A (ja) * | 2015-10-08 | 2017-04-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0879041A (ja) | 1994-08-31 | 1996-03-22 | Oki Electric Ind Co Ltd | 光半導体リレーとこれを用いたコントローラ、電力供給装置及び端末装置切換装置 |
JP4751150B2 (ja) | 2005-08-31 | 2011-08-17 | 株式会社東芝 | 窒化物系半導体装置 |
US9105703B2 (en) | 2010-03-22 | 2015-08-11 | International Rectifier Corporation | Programmable III-nitride transistor with aluminum-doped gate |
JP5724347B2 (ja) * | 2010-12-10 | 2015-05-27 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2014099523A (ja) * | 2012-11-15 | 2014-05-29 | Mitsubishi Electric Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
JP2017509150A (ja) * | 2014-03-25 | 2017-03-30 | インテル・コーポレーション | 急峻なサブスレッショルドスイングを提供するエピタキシャル層を有するiii−nトランジスタ |
JP2017050434A (ja) * | 2015-09-03 | 2017-03-09 | 株式会社東芝 | 半導体装置 |
JP6594272B2 (ja) * | 2016-09-02 | 2019-10-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012039164A (ja) * | 2006-03-06 | 2012-02-23 | Sharp Corp | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP2013118377A (ja) * | 2011-12-01 | 2013-06-13 | Power Integrations Inc | パワートランジスタ装置のための多層構造を作製する方法、ヘテロ接合電界効果トランジスタ装置のための多層構造を作製する方法、および窒化物系ヘテロ接合電界効果トランジスタ装置 |
JP2014110402A (ja) * | 2012-12-04 | 2014-06-12 | Rohm Co Ltd | 半導体装置 |
JP2016539496A (ja) * | 2013-10-15 | 2016-12-15 | 蘇州晶湛半導体有限公司Enkris Semiconductor,Inc. | Iii族窒化物半導体デバイスおよびその製造方法 |
JP2017502519A (ja) * | 2013-12-27 | 2017-01-19 | 蘇州晶湛半導体有限公司Enkris Semiconductor,Inc. | エンハンスメント型デバイスの製造方法およびエンハンスメント型デバイス |
JP2016051775A (ja) * | 2014-08-29 | 2016-04-11 | 豊田合成株式会社 | Mis型半導体装置 |
JP2017073500A (ja) * | 2015-10-08 | 2017-04-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
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