JPWO2018198337A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2018198337A1 JPWO2018198337A1 JP2017545695A JP2017545695A JPWO2018198337A1 JP WO2018198337 A1 JPWO2018198337 A1 JP WO2018198337A1 JP 2017545695 A JP2017545695 A JP 2017545695A JP 2017545695 A JP2017545695 A JP 2017545695A JP WO2018198337 A1 JPWO2018198337 A1 JP WO2018198337A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 150000004767 nitrides Chemical class 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。この半導体装置はGaN on Si HEMTである。Si基板1は、例えば室温で10000Ωcm程度の抵抗を持つ高抵抗のSi基板である。
図2は、本発明の実施の形態2に係る半導体装置を示す断面図である。P型導電層11を設けると、低温時に高周波電力の漏えいが増えることがある。これに対して、本実施の形態では、P型導電層11の幅がドレイン電極7の幅よりも小さい。これにより、低温時に高周波電力が基板側へ漏えいするのを少なくして、低温時の特性を向上させることができる。その他の構成及び効果は実施の形態1と同様である。
図3は、本発明の実施の形態3に係る半導体装置を示す断面図である。P型導電層11の幅はドレイン電極7の幅よりも大きい。これにより、高温時に高周波電力が基板側へ漏えいするのを実施の形態1よりも減らすことができる。その他の構成及び効果は実施の形態1と同様である。なお、P型導電層11の幅を広くすると低温時に高周波電力の漏えいが増えるが、高温時の特性を重視する場合に本実施の形態は有効である。
図4は、本発明の実施の形態4に係る半導体装置を示す断面図である。P型導電層11は、高濃度層11aと、高濃度層11aの外側に設けられ高濃度層11aより不純物濃度が低い低濃度層11bとを有する。高濃度層11aと低濃度層11bは、例えばイオン注入で形成し、P型ドーパントとしてボロン(B)、アルミニウム(Al)などを用いる。
図5は、本発明の実施の形態5に係る半導体装置を示す断面図である。P型導電層11の上においてドレイン電極7が分割され、バッファ層2、電子走行層3及び電子供給層4に空洞12が設けられている。例えば塩素系ガスを用いてバッファ層2、電子走行層3及び電子供給層4をドライエッチングして空洞12を形成し、Si基板1を露出させる。これにより、ドレインソース容量を低減できるため、高温時に高周波電力が基板側へ更に漏れ難くなる。
図6は、本発明の実施の形態6に係る半導体装置を示す断面図である。バッファ層2、電子走行層3及び電子供給層4よりも誘電率が低い低誘電率材料13が空洞12に埋め込まれている。低誘電率材料13は、例えばベンゾシクロブテン、ポリイミド及びポリフルオロカーボンなどである。これにより、ドレインソース容量を低減できるため、高温時に高周波電力が基板側へ更に漏れ難くなる。また、モールド樹脂で封止するデバイスの場合、実施の形態5では誘電率がやや高いモールド樹脂が空洞12に入るため、効果が低下する。これに対して、モールド樹脂よりも誘電率が低い低誘電率材料13を空洞12に埋め込んだ本実施の形態ではこれを防ぐことができる。
Claims (7)
- Si基板と、
前記Si基板の上に設けられた窒化物半導体層と、
前記窒化物半導体層の上に設けられたゲート電極、ソース電極及びドレイン電極と、
前記ドレイン電極の下において前記Si基板に設けられ、前記窒化物半導体層と接するP型導電層とを備えることを特徴とする半導体装置。 - 前記P型導電層は、前記ゲート電極及び前記ソース電極の下には設けられていないことを特徴とする請求項1に記載の半導体装置。
- 前記P型導電層の幅は前記ドレイン電極の幅よりも小さいことを特徴とする請求項1又は2に記載の半導体装置。
- 前記P型導電層の幅は前記ドレイン電極の幅よりも大きいことを特徴とする請求項1又は2に記載の半導体装置。
- 前記P型導電層は、高濃度層と、前記高濃度層の外側に設けられ前記高濃度層より不純物濃度が低い低濃度層とを有することを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- 前記P型導電層の上において前記窒化物半導体層に空洞が設けられていることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
- 前記空洞に埋め込まれた前記窒化物半導体層よりも誘電率が低い低誘電率材料を更に備えることを特徴とする請求項6に記載の半導体装置。
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PCT/JP2017/017014 WO2018198337A1 (ja) | 2017-04-28 | 2017-04-28 | 半導体装置 |
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JP (1) | JP6249146B1 (ja) |
KR (1) | KR102202173B1 (ja) |
CN (1) | CN110574147B (ja) |
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WO (1) | WO2018198337A1 (ja) |
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US11158575B2 (en) * | 2018-06-05 | 2021-10-26 | Macom Technology Solutions Holdings, Inc. | Parasitic capacitance reduction in GaN-on-silicon devices |
US11398560B2 (en) * | 2018-09-26 | 2022-07-26 | Intel Corporation | Contact electrodes and dielectric structures for thin film transistors |
JP7016311B2 (ja) * | 2018-11-06 | 2022-02-04 | 株式会社東芝 | 半導体装置 |
CN112840464B (zh) * | 2021-01-12 | 2022-07-12 | 英诺赛科(苏州)半导体有限公司 | 半导体器件及其制造方法 |
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US7180103B2 (en) * | 2004-09-24 | 2007-02-20 | Agere Systems Inc. | III-V power field effect transistors |
JP2006196869A (ja) * | 2004-12-13 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7800097B2 (en) | 2004-12-13 | 2010-09-21 | Panasonic Corporation | Semiconductor device including independent active layers and method for fabricating the same |
JP4478175B2 (ja) * | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
WO2011024367A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 窒化物半導体装置 |
JP5658472B2 (ja) | 2010-03-26 | 2015-01-28 | ルネサスエレクトロニクス株式会社 | 電界効果トランジスタ |
JP5720000B2 (ja) * | 2011-02-23 | 2015-05-20 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置 |
JP5853188B2 (ja) * | 2011-05-30 | 2016-02-09 | パナソニックIpマネジメント株式会社 | スイッチ装置 |
WO2013021628A1 (ja) * | 2011-08-08 | 2013-02-14 | パナソニック株式会社 | 半導体装置 |
JP5879805B2 (ja) * | 2011-08-09 | 2016-03-08 | 富士通株式会社 | スイッチング素子及びこれを用いた電源装置 |
JP5896667B2 (ja) * | 2011-09-26 | 2016-03-30 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
WO2014061254A1 (ja) * | 2012-10-16 | 2014-04-24 | 旭化成エレクトロニクス株式会社 | 電界効果トランジスタ及び半導体装置 |
CN103117294B (zh) | 2013-02-07 | 2015-11-25 | 苏州晶湛半导体有限公司 | 氮化物高压器件及其制造方法 |
JP6133191B2 (ja) * | 2013-10-18 | 2017-05-24 | 古河電気工業株式会社 | 窒化物半導体装置、ダイオード、および電界効果トランジスタ |
JP6368197B2 (ja) * | 2014-08-29 | 2018-08-01 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017059786A (ja) * | 2015-09-18 | 2017-03-23 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US10192980B2 (en) * | 2016-06-24 | 2019-01-29 | Cree, Inc. | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
JP2018041933A (ja) * | 2016-09-09 | 2018-03-15 | 株式会社東芝 | 半導体装置及び半導体基板 |
US11588024B2 (en) * | 2017-03-17 | 2023-02-21 | Infineon Technologies Austria Ag | High voltage blocking III-V semiconductor device |
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DE112017007491B4 (de) | 2023-04-27 |
JP6249146B1 (ja) | 2017-12-20 |
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US20200144393A1 (en) | 2020-05-07 |
CN110574147A (zh) | 2019-12-13 |
KR102202173B1 (ko) | 2021-01-12 |
WO2018198337A1 (ja) | 2018-11-01 |
CN110574147B (zh) | 2023-01-10 |
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