JPWO2018083722A1 - 高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法 - Google Patents
高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法 Download PDFInfo
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 18
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- 238000000034 method Methods 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 238000010248 power generation Methods 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 9
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- 229910052698 phosphorus Inorganic materials 0.000 description 9
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
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- 239000002800 charge carrier Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910001868 water Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
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- 238000009826 distribution Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
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- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
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- 230000005684 electric field Effects 0.000 description 2
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- 239000007789 gas Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
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- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
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- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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Abstract
Description
前記第1パッシベーション膜と前記第2パッシベーション膜が酸化アルミニウムを含む化合物からなるものであることを特徴とする太陽電池を提供する。
前記第1主表面に、n型の導電型を有し該n型の導電型を付与する添加不純物の基板深さ方向における最大濃度が5×1018atoms/cm3以上であるn型領域を形成する工程と、
前記p型領域と前記n型領域を覆うように第1パッシベーション膜を形成する工程と、
前記第1主表面の反対側の表面である第2主表面に、該第2主表面を覆うように第2パッシベーション膜を形成する工程と、
前記p型領域の表面に接する正電極を形成する工程と、
前記n型領域の表面に接する負電極を形成する工程と
を有する裏面電極型太陽電池の製造方法であって、
前記第1パッシベーション膜と前記第2パッシベーション膜を、酸化アルミニウムを含む化合物により形成することを特徴とする太陽電池の製造方法を提供する。
前記第1パッシベーション膜又は前記反射膜の上に導電性ペーストを塗布するサブステップと、
前記導電性ペーストを塗布した前記結晶シリコン基板を、700℃以上890℃以下の温度において、1秒以上10分以下で熱処理するサブステップを有することが好ましい。
150mm角、厚さ200μm、比抵抗1Ω・cmのリンドープ<100>n型アズカットシリコン基板において、熱濃水酸化カリウム水溶液によりダメージ層を除去後、80℃の5%水酸化カリウム水溶液中に基板を20分間浸漬し、ランダムピラミッド状のテクスチャを形成し、引き続き塩酸/過酸化水素混合溶液中で洗浄を行った。
実施例1でp型領域とn型領域を形成した基板の裏面に、原子層堆積法により膜厚100nmの酸化アルミニウムを形成し、さらに、受光面に膜厚10nmの酸化アルミニウムを形成した。その後、その基板を450℃の窒素雰囲気で15分間熱処理した。基板受光面には、さらにプラズマCVDにより、膜厚90nmの窒化シリコン膜を形成した。
実施例1でp型領域とn型領域を形成した基板の両面に、原子層堆積法により膜厚10nmの酸化アルミニウムを形成し、その後、基板を450℃の窒素雰囲気で15分間熱処理した。基板両面には、さらにプラズマCVDにより、膜厚90nmの窒化シリコン膜を形成した。
150mm角、厚さ200μm、比抵抗1Ω・cmのボロンドープ<100>p型アズカットシリコン基板を用い、実施例1と同様の太陽電池を作製した。その後、キセノンランプ光源式の疑似太陽光を使い、太陽電池の出力特性を測定した。
150mm角、厚さ200μm、比抵抗1Ω・cmのリンドープ<100>n型アズカットシリコン基板において、熱濃水酸化カリウム水溶液によりダメージ層を除去後、80℃の5%水酸化カリウム水溶液中に20分間浸漬し、ランダムピラミッド状のテクスチャを形成し、引き続き塩酸/過酸化水素混合溶液中で洗浄を行った。
実施例1でp型領域とn型領域を形成した基板の裏面に、原子層堆積法により膜厚10nmの酸化アルミニウムを形成した。次に、スクリーン印刷によりp型領域を酸レジストで覆って乾燥させた後、露出しているn型領域上の酸化アルミニウムを2%のフッ酸水溶液で除去した。酸レジスト除去及び基板洗浄後、基板を450℃の窒素雰囲気で15分間熱処理した。基板両面には、さらにプラズマCVDにより、膜厚90nmの窒化シリコン膜を形成した。
実施例1でp型領域とn型領域を形成した基板の受光面にリン化合物とバインダーを混合させたリン拡散源を塗布し、塗布面を向かい合わせた状態で820℃、10分の熱処理を行い、受光面にFSF層を形成した。次に、基板を10%のHF水溶液に浸漬してガラス層を除去した後、さらに80℃の塩酸水と過酸化水素水の混合液と2%のHF水溶液に順次浸漬して洗浄し、純水でのリンス後に乾燥した。
実施例1でp型領域とn型領域を形成した基板の受光面にリン化合物とバインダーを混合させたリン拡散源を塗布し、塗布面を向かい合わせた状態で820℃、10分の熱処理を行い、受光面にFSF層を形成した。次に、基板を10%のHF水溶液に浸漬してガラス層を除去した後、さらに80℃の塩酸水と過酸化水素水の混合液と2%のHF水溶液に順次浸漬して洗浄後し、純水でのリンス後に乾燥した。
実施例3と同様の工程で作製した太陽電池において、リン拡散条件を調整し、n型領域の基板深さ方向におけるピーク不純物濃度を3×1018atoms/cm3とした。最後に、キセノンランプ光源式の疑似太陽光を使い、太陽電池の出力特性を測定した。
実施例4でp型領域とn型領域を形成した基板の受光面に、原子層堆積法により膜厚10nmの酸化アルミニウムを形成し、基板を450℃の窒素雰囲気で15分間熱処理した。基板両面には、さらにプラズマCVDにより、膜厚90nmの窒化シリコン膜を形成した。
Claims (12)
- 結晶シリコン基板の第1主表面に、p型の導電型を有するp型領域と、n型の導電型を有し該n型の導電型を付与する添加不純物の基板深さ方向における最大濃度が5×1018atoms/cm3以上であるn型領域とが配置され、前記p型領域と前記n型領域を覆うように第1パッシベーション膜が配置され、前記第1主表面の反対側の表面である第2主表面に、該第2主表面を覆うように第2パッシベーション膜が配置された裏面電極型太陽電池であって、
前記第1パッシベーション膜と前記第2パッシベーション膜が酸化アルミニウムを含む化合物からなるものであることを特徴とする太陽電池。 - 前記第2主表面の少なくとも一部は、前記結晶シリコン基板のバルクにおける導電型及び導電率と同じ導電型及び導電率を有することを特徴とする請求項1に記載の太陽電池。
- 前記第2パッシベーション膜の上に、さらに反射防止膜が配置されたものであることを特徴とする請求項1又は請求項2に記載の太陽電池。
- 前記第1パッシベーション膜の上に、さらに反射膜が配置されたものであることを特徴とする請求項1から請求項3のいずれか1項に記載の太陽電池。
- 前記反射防止膜及び前記反射膜が、酸化シリコン、フッ化マグネシウム、窒化シリコン、酸化錫、及び、酸化チタンの少なくともいずれかを含むものであることを特徴とする請求項1から請求項4のいずれか1項に記載の太陽電池。
- 前記第一主表面における前記p型領域の占有面積が前記n型領域の占有面積よりも大きいことを特徴とする請求項1から請求項5のいずれか1項に記載の太陽電池。
- 請求項1から請求項6のいずれか1項に記載の太陽電池を電気的に接続して成るものであることを特徴とする太陽電池モジュール。
- 請求項7に記載の太陽電池モジュールを電気的に複数接続して成るものであることを特徴とする太陽電池発電システム。
- 結晶シリコン基板の第1主表面に、p型の導電型を有するp型領域を形成する工程と、
前記第1主表面に、n型の導電型を有し該n型の導電型を付与する添加不純物の基板深さ方向における最大濃度が5×1018atoms/cm3以上であるn型領域を形成する工程と、
前記p型領域と前記n型領域を覆うように第1パッシベーション膜を形成する工程と、
前記第1主表面の反対側の表面である第2主表面に、該第2主表面を覆うように第2パッシベーション膜を形成する工程と、
前記p型領域の表面に接する正電極を形成する工程と、
前記n型領域の表面に接する負電極を形成する工程と
を有する裏面電極型太陽電池の製造方法であって、
前記第1パッシベーション膜と前記第2パッシベーション膜を、酸化アルミニウムを含む化合物により形成することを特徴とする太陽電池の製造方法。 - 前記第2パッシベーション膜の上に、さらに反射防止膜を形成する工程を有することを特徴とする請求項9に記載の太陽電池の製造方法。
- 前記第1パッシベーション膜の上に、さらに反射膜を形成する工程を有することを特徴とする請求項9又は請求項10に記載の太陽電池の製造方法。
- 前記正電極を形成する工程及び前記負電極を形成する工程は、
前記第1パッシベーション膜又は前記反射膜の上に導電性ペーストを塗布するサブステップと、
前記導電性ペーストを塗布した前記結晶シリコン基板を、700℃以上890℃以下の温度において、1秒以上10分以下で熱処理するサブステップを有することを特徴とする請求項9から請求項11のいずれか1項に記載の太陽電池の製造方法。
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Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3300812B2 (ja) * | 2000-01-19 | 2002-07-08 | 独立行政法人産業技術総合研究所 | 光電変換素子 |
JP4945916B2 (ja) * | 2005-04-08 | 2012-06-06 | トヨタ自動車株式会社 | 光電変換素子 |
JP2006332273A (ja) * | 2005-05-25 | 2006-12-07 | Sharp Corp | 裏面電極型太陽電池 |
JP4767110B2 (ja) | 2006-06-30 | 2011-09-07 | シャープ株式会社 | 太陽電池、および太陽電池の製造方法 |
US8481845B2 (en) * | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
KR101155343B1 (ko) * | 2008-02-25 | 2012-06-11 | 엘지전자 주식회사 | 백 콘택 태양전지의 제조 방법 |
EP2261999B1 (en) * | 2008-03-31 | 2019-03-27 | Kyocera Corporation | Solar cell element and solar cell module |
US20090314338A1 (en) * | 2008-06-19 | 2009-12-24 | Renewable Energy Corporation Asa | Coating for thin-film solar cells |
AU2010229103A1 (en) * | 2009-03-26 | 2011-11-03 | Bp Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
KR102017558B1 (ko) * | 2009-09-18 | 2019-09-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 태양전지, 그 제조방법 및 태양전지 모듈 |
US9947809B2 (en) | 2009-11-11 | 2018-04-17 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
JP5215330B2 (ja) | 2010-02-01 | 2013-06-19 | シャープ株式会社 | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール |
JP5213188B2 (ja) * | 2010-04-27 | 2013-06-19 | シャープ株式会社 | 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法 |
JP4831709B2 (ja) | 2010-05-21 | 2011-12-07 | シャープ株式会社 | 半導体装置および半導体装置の製造方法 |
JP5636760B2 (ja) | 2010-06-21 | 2014-12-10 | シャープ株式会社 | シリコンウエハ、半導体装置、シリコンウエハの製造方法および半導体装置の製造方法 |
US8809097B1 (en) * | 2010-09-22 | 2014-08-19 | Crystal Solar Incorporated | Passivated emitter rear locally patterned epitaxial solar cell |
US20120111399A1 (en) * | 2010-11-08 | 2012-05-10 | E. I. Du Pont De Nemours And Company | Solar cell electrode |
JP5817827B2 (ja) * | 2011-04-21 | 2015-11-18 | 昭栄化学工業株式会社 | 導電性ペースト |
CN102222726B (zh) | 2011-05-13 | 2013-06-26 | 晶澳(扬州)太阳能科技有限公司 | 采用离子注入法制作交错背接触ibc晶体硅太阳能电池的工艺 |
JP2013012668A (ja) | 2011-06-30 | 2013-01-17 | Sharp Corp | 太陽電池用ウエハ、太陽電池およびその製造方法 |
WO2013000025A1 (en) * | 2011-06-30 | 2013-01-03 | Newsouth Innovations Pty Limited | Metallisation method |
JP2013012667A (ja) | 2011-06-30 | 2013-01-17 | Sharp Corp | 太陽電池用ウエハ、太陽電池およびその製造方法 |
CN202585429U (zh) * | 2011-12-27 | 2012-12-05 | 广东爱康太阳能科技有限公司 | 一种背面点接触晶硅太阳电池 |
JP5924945B2 (ja) * | 2012-01-11 | 2016-05-25 | 東洋アルミニウム株式会社 | ペースト組成物 |
JP2013222747A (ja) | 2012-04-13 | 2013-10-28 | Nagase Chemtex Corp | 塗布拡散剤組成物、塗布拡散剤組成物の製造方法、太陽電池及び太陽電池の製造方法 |
TWI569461B (zh) * | 2012-07-19 | 2017-02-01 | 日立化成股份有限公司 | 太陽電池元件及其製造方法及太陽電池模組 |
CN202749376U (zh) * | 2012-08-16 | 2013-02-20 | 西安黄河光伏科技股份有限公司 | 一种背钝化太阳能电池 |
JP2014072450A (ja) * | 2012-09-28 | 2014-04-21 | Hitachi Chemical Co Ltd | 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
US9379258B2 (en) * | 2012-11-05 | 2016-06-28 | Solexel, Inc. | Fabrication methods for monolithically isled back contact back junction solar cells |
JP2014154656A (ja) * | 2013-02-07 | 2014-08-25 | Dainippon Screen Mfg Co Ltd | 結晶シリコン型太陽電池、およびその製造方法 |
US20150243812A1 (en) * | 2013-06-20 | 2015-08-27 | PLANT PV, Inc. | Silver nanoparticle based composite solar metallization paste |
US9105769B2 (en) * | 2013-09-12 | 2015-08-11 | International Business Machines Corporation | Shallow junction photovoltaic devices |
CN103618033A (zh) * | 2013-12-05 | 2014-03-05 | 欧贝黎新能源科技股份有限公司 | 一种背钝化太阳电池的丝网印刷生产制备法 |
CN106165120B (zh) * | 2014-03-31 | 2018-01-30 | 国立研究开发法人科学技术振兴机构 | 太阳能电池及太阳能电池的制造方法 |
JP6199839B2 (ja) | 2014-09-30 | 2017-09-20 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
JP6238884B2 (ja) * | 2014-12-19 | 2017-11-29 | 三菱電機株式会社 | 光起電力素子およびその製造方法 |
CN105789342B (zh) | 2016-03-07 | 2018-01-23 | 中山大学 | 一种氧化物‑金属多层膜背接触晶体硅太阳电池及其制备方法 |
CN105914249B (zh) | 2016-06-27 | 2018-07-17 | 泰州隆基乐叶光伏科技有限公司 | 全背电极接触晶硅太阳能电池结构及其制备方法 |
CN117613134A (zh) | 2016-10-25 | 2024-02-27 | 信越化学工业株式会社 | 太阳能电池及其制造方法、太阳能电池模块和发电系统 |
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