JPWO2018074100A1 - 高周波基体、高周波パッケージおよび高周波モジュール - Google Patents
高周波基体、高周波パッケージおよび高周波モジュール Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 80
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- 229910052751 metal Inorganic materials 0.000 description 18
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- 238000000034 method Methods 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
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- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000004080 punching Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910009071 Sn—Zn—Bi Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- IJBYNGRZBZDSDK-UHFFFAOYSA-N barium magnesium Chemical compound [Mg].[Ba] IJBYNGRZBZDSDK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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Abstract
Description
図1は本発明の一実施形態に係る高周波基体1の斜視図を、図2は図1に示した本発明の一実施形態に係る高周波基体であって、図2(a)は、の本発明の一実施形態に係る高周波基体の平面図であり、図2(b)は図1のAで示した拡大斜視図である。図3、図5、図7および図9は本発明の他の実施形態に係る高周波基体の斜視図である。図4、図6、図8および図10は、それぞれ図3、図5、図7および図9に示した本発明の他の実施形態に係る高周波基体であって、図4(a)、図6(a)、図8(a)および図10(a)は、本発明の他の実施形態に係る高周波基体の平面図であり、図4(b)、図6(b)、図8(b)および図10(b)はそれぞれ図3のB、図5のC、図7のDおよび図9のEで示した拡大斜視図である。図11は、本発明の他の実施形態に係る高周波基体の分解斜視図である。図12、図13および図14は、本発明の他の実施形態に係る高周波基体であって、図12(a)、図13(a)および図14(a)は、本発明の他の実施形態に係る高周波基体の斜視図であり、図12(b)は、図12(a)のFを、図13(b)は、図13(a)のGを、図14(b)は、図14(a)のHをそれぞれ示した拡大斜視図である。そして、図15は、本発明の他の実施形態に係る高周波基体のインピーダンスの値を示したグラフである。これらの図において、高周波基体1は、絶縁基体2、第1線路導体3、第2線路導体4を備えている。
絶縁基体2は、たとえば複数の絶縁層2a,2b,2c,2dおよび2eが酸化アルミニウム質焼結体からなる場合であれば、次のようにして製作される。まず、酸化アルミニウムおよび酸化ケイ素等の原料粉末に適当な有機バインダおよび溶剤等を添加混合してスラリーを作製する。次に、スラリーをドクターブレード法等の成形法でシート状に成形することにより複数枚のセラミックグリーンシートを作製する。このとき、一番上方に位置するグリーンシートの一部に凹部21になる貫通孔が形成されている。
図16は本発明の一実施形態に係る高周波パッケージ10の斜視図を、図17は本発明の一実施形態に係る高周波パッケージ10の分解斜視図を示している。これらの図において、高周波パッケージ10は、基板8、枠体9および本発明の実施形態に係る高周波基体1を備えている。
図18は本発明の一実施形態に係る高周波モジュール100の斜視図を、を示している。この図において、高周波モジュール100は、本発明の実施形態に係る高周波パッケージ10、半導体素子11および蓋体12を備えている。
2 絶縁基体
21 凹部
22 接地導体層
23 内部接地導体層
24 接続線路導体
3 第1線路導体
31 第1分離部
32 第1電極パッド
33 第1線路
4 第2線路導体
41 第2分離部
42 第2電極パッド
43 第2線路
51 第1コンデンサ
52 第2コンデンサ
7 切欠き部
71 メタライズ層
8 基板
9 枠体
91 貫通孔
10 高周波パッケージ
11 半導体素子
12 蓋体
100 高周波モジュール
Claims (8)
- 上面に凹部を有する絶縁基体と、
前記絶縁基体の上面に位置した、第1線路導体と、
前記絶縁基体の上面に位置するとともに、平面視において前記第1線路導体と間が空いており前記第1線路導体と並行に延びている第2線路導体と、を備えており、
前記凹部は、前記第1線路導体と前記第2線路導体との間に位置しているとともに、前記凹部は前記絶縁基体よりも誘電率が低いことを特徴とする高周波基体。 - 前記第1線路導体は分離している第1分離部を有するとともに、前記第2線路導体は分離している第2分離部を有しており、
前記第1分離部の上面には第1コンデンサが位置しているとともに、前記第2分離部の上面には第2コンデンサが位置しており、
平面視において前記凹部は、前記第1分離部の端部から前記第2分離部の端部の位置まで、前記第1線路導体および前記第2線路導体と並行に延びていることを特徴とする請求項1に記載の高周波基体。 - 前記第1分離部および前記第2分離部は凹んでいることを特徴とする請求項2に記載の高周波基体。
- 前記凹部の端部の側壁には、切欠き部を有していることを特徴とする請求項1〜3のいずれか1つに記載の高周波基体。
- 前記切欠き部の表面に、メタライズ層を有していることを特徴とする請求項4に記載の高周波基体。
- 前記絶縁基体の上面に、前記第1線路導体と前記第2線路導体と間を空けて位置した接地導体層をさらに有することを特徴とする請求項1〜5のいずれか1つに記載の高周波基体。
- 基板と、
前記基板の上面に接合された、貫通孔を有する枠体と、
前記枠体の前記貫通孔に固定された請求項1〜6のいずれか1つに記載の高周波基体とを備えていることを特徴とする高周波パッケージ。 - 請求項7に記載の高周波パッケージと、
前記基板の上面に実装された、前記高周波パッケージの前記高周波基体と電気的に接続された半導体素子と、
前記枠体の上端に接合された、前記半導体素子を覆うとともに前記高周波パッケージの内部を覆った蓋体とを備えていることを特徴とする高周波モジュール。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112969U (ja) * | 1980-01-29 | 1981-08-31 | ||
JPH11214556A (ja) * | 1998-01-26 | 1999-08-06 | Kyocera Corp | 高周波用入出力端子ならびに高周波用半導体素子収納用パッケージ |
JP2003152124A (ja) * | 2001-11-12 | 2003-05-23 | Kyocera Corp | 高周波用パッケージ |
US20080048796A1 (en) * | 2006-08-22 | 2008-02-28 | Yigal Shaul | High speed signal transmission |
JP2012227887A (ja) * | 2011-04-22 | 2012-11-15 | Japan Oclaro Inc | 差動伝送線路、及び通信装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3241139B2 (ja) * | 1993-02-04 | 2001-12-25 | 三菱電機株式会社 | フィルムキャリア信号伝送線路 |
JP2001044644A (ja) * | 1999-07-27 | 2001-02-16 | Kyocera Corp | 多層回路基板およびその製法 |
DE60037961T2 (de) * | 1999-12-21 | 2009-01-29 | International Business Machines Corp. | Verfahren und Struktur zur Reduzierung des Leistungsrauschens |
US20040131318A1 (en) * | 2002-08-30 | 2004-07-08 | Kyocera Corporation | Optical element housing package and optical module |
JP2005050974A (ja) * | 2003-07-31 | 2005-02-24 | Toshiba Corp | 半導体パッケージおよび光通信モジュール並びに半導体装置 |
JP2006032783A (ja) | 2004-07-20 | 2006-02-02 | Hitachi Cable Ltd | 電子部品実装構造及びそれを用いた光トランシーバ |
JP2008125038A (ja) | 2006-11-16 | 2008-05-29 | Shinko Electric Ind Co Ltd | 高周波用基板構造及び高周波用パッケージ |
US20090059540A1 (en) * | 2007-08-31 | 2009-03-05 | Giboney Kirk S | Shielded high-frequency circuit module |
EP2246884B1 (en) * | 2008-01-30 | 2013-07-31 | Kyocera Corporation | High frequency wiring board |
US20110048796A1 (en) | 2008-01-30 | 2011-03-03 | Kyocera Corporation | Connector, Package Using the Same and Electronic Device |
JP2008311682A (ja) | 2008-09-16 | 2008-12-25 | Kyocera Corp | 配線基板 |
JP5257088B2 (ja) | 2009-01-15 | 2013-08-07 | 富士通オプティカルコンポーネンツ株式会社 | パッケージ |
CN203027596U (zh) * | 2011-12-19 | 2013-06-26 | 嘉基电子科技(苏州)有限公司 | 一种软性电路板及其组合 |
US8748753B2 (en) | 2012-03-02 | 2014-06-10 | Sae Magnetics (H.K.) Ltd. | Printed circuit board |
EP3176817B1 (en) | 2014-07-30 | 2020-08-12 | KYOCERA Corporation | Package for housing an electronic component and electronic device comprising such a package |
-
2017
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-
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- 2022-02-10 JP JP2022019156A patent/JP7244687B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112969U (ja) * | 1980-01-29 | 1981-08-31 | ||
JPH11214556A (ja) * | 1998-01-26 | 1999-08-06 | Kyocera Corp | 高周波用入出力端子ならびに高周波用半導体素子収納用パッケージ |
JP2003152124A (ja) * | 2001-11-12 | 2003-05-23 | Kyocera Corp | 高周波用パッケージ |
US20080048796A1 (en) * | 2006-08-22 | 2008-02-28 | Yigal Shaul | High speed signal transmission |
JP2012227887A (ja) * | 2011-04-22 | 2012-11-15 | Japan Oclaro Inc | 差動伝送線路、及び通信装置 |
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