JPWO2018030444A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JPWO2018030444A1 JPWO2018030444A1 JP2018533524A JP2018533524A JPWO2018030444A1 JP WO2018030444 A1 JPWO2018030444 A1 JP WO2018030444A1 JP 2018533524 A JP2018533524 A JP 2018533524A JP 2018533524 A JP2018533524 A JP 2018533524A JP WO2018030444 A1 JPWO2018030444 A1 JP WO2018030444A1
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Abstract
Description
特許文献1 特開2007−311627号公報
特許文献2 特開2014−7254号公報
Claims (11)
- 半導体基板と、
前記半導体基板の内部に設けられた第1導電型のエミッタ領域と、
前記半導体基板の内部において前記エミッタ領域の下方に設けられた第2導電型のベース領域と、
前記半導体基板の内部において前記ベース領域よりも下方に設けられ、不純物として水素を含む、第1導電型の蓄積領域と、
前記半導体基板の上面から前記エミッタ領域、前記ベース領域および前記蓄積領域を貫通して設けられたトレンチ部と
を備える半導体装置。 - 前記ベース領域に、水素が含まれる
請求項1に記載の半導体装置。 - 前記半導体基板の深さ方向における水素の濃度分布が、前記ベース領域および前記蓄積領域の双方においてピークを有する
請求項2に記載の半導体装置。 - 前記蓄積領域における水素濃度分布のピーク値は、前記ベース領域における水素濃度分布のピーク値よりも高い
請求項2または3に記載の半導体装置。 - 前記半導体基板の深さ方向において、前記ベース領域のドーピング濃度分布のピーク位置と、前記ベース領域の水素濃度分布のピーク位置とが一致している
請求項2から4のいずれか一項に記載の半導体装置。 - 前記ベース領域におけるドーピング濃度分布のピーク値よりも、前記ベース領域における水素濃度分布のピーク値のほうが大きい
請求項2から5のいずれか一項に記載の半導体装置。 - 前記半導体基板の内部において前記蓄積領域よりも下方に設けられ、前記エミッタ領域よりもドーピング濃度の低い第1導電型のドリフト領域を更に備え、
前記ベース領域における水素濃度分布のピーク値は、前記ドリフト領域におけるドーピング濃度よりも高い
請求項2から6のいずれか一項に記載の半導体装置。 - 前記半導体基板の内部において、前記ベース領域と前記蓄積領域との間に、前記蓄積領域よりもドーピング濃度の低い中間領域を更に備える
請求項1から7のいずれか一項に記載の半導体装置。 - 前記半導体基板の上面において前記トレンチ部を覆うように設けられた層間絶縁膜と、
前記トレンチ部の上方における前記層間絶縁膜の上面全体に設けられたバリアメタルと
を更に備える請求項1から8のいずれか一項に記載の半導体装置。 - 半導体基板の上面側に、第1導電型のエミッタ領域、および、前記エミッタ領域の下方に設けられた第2導電型のベース領域を形成する不純物領域形成段階と、
前記半導体基板にプロトンを注入して、前記ベース領域よりも下方に設けられ、不純物として水素を含む第1導電型の蓄積領域を形成するプロトン注入段階と
を備える半導体装置の製造方法。 - 前記不純物領域形成段階と前記プロトン注入段階との間に、
前記半導体基板の上面から前記エミッタ領域および前記ベース領域を貫通するトレンチ部を形成するトレンチ形成段階と、
前記半導体基板の上面において前記トレンチ部を覆うように層間絶縁膜を形成する層間絶縁膜形成段階と、
前記トレンチ部の上方における前記層間絶縁膜の上面全体にバリアメタルを形成するバリアメタル形成段階と
を備える請求項10に記載の半導体装置の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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DE112015000206T5 (de) | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
JP6645594B2 (ja) * | 2017-02-15 | 2020-02-14 | 富士電機株式会社 | 半導体装置 |
US11081554B2 (en) * | 2017-10-12 | 2021-08-03 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having trench termination structure and method |
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JP7207512B2 (ja) * | 2018-01-31 | 2023-01-18 | 三菱電機株式会社 | 半導体装置、電力変換装置及び半導体装置の製造方法 |
WO2019181852A1 (ja) * | 2018-03-19 | 2019-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7551274B2 (ja) * | 2018-04-04 | 2024-09-17 | 富士電機株式会社 | 半導体装置 |
CN110808283A (zh) * | 2018-08-06 | 2020-02-18 | 上海先进半导体制造股份有限公司 | 具有载流子存储区的ligbt |
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US11069770B2 (en) * | 2018-10-01 | 2021-07-20 | Ipower Semiconductor | Carrier injection control fast recovery diode structures |
CN111129133B (zh) * | 2018-10-30 | 2021-03-02 | 比亚迪半导体股份有限公司 | 一种逆导型沟槽绝缘栅双极型晶体管及其制作方法 |
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JP7222435B2 (ja) | 2019-10-11 | 2023-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001127286A (ja) * | 1999-10-27 | 2001-05-11 | Toyota Central Res & Dev Lab Inc | 絶縁ゲート型半導体装置、およびその製造方法ならびにインバータ回路 |
JP2007311627A (ja) * | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2013138172A (ja) * | 2011-11-30 | 2013-07-11 | Denso Corp | 半導体装置 |
WO2016051970A1 (ja) * | 2014-09-30 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0722198B2 (ja) * | 1987-07-15 | 1995-03-08 | 富士電機株式会社 | 絶縁ゲ−ト形バイポ−ラトランジスタ |
JP2008078397A (ja) | 2006-09-21 | 2008-04-03 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置の製造方法 |
JP5089191B2 (ja) | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
KR101794182B1 (ko) * | 2009-11-02 | 2017-11-06 | 후지 덴키 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
US9466689B2 (en) * | 2012-03-30 | 2016-10-11 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device and semiconductor device manufactured thereby |
JP6102092B2 (ja) | 2012-06-22 | 2017-03-29 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
DE102012020785B4 (de) | 2012-10-23 | 2014-11-06 | Infineon Technologies Ag | Erhöhung der Dotierungseffizienz bei Protonenbestrahlung |
JP6421570B2 (ja) | 2013-12-20 | 2018-11-14 | 株式会社デンソー | 半導体装置 |
DE102014107161B4 (de) * | 2014-05-21 | 2019-10-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBTs und IGBT |
JP6274154B2 (ja) * | 2015-05-27 | 2018-02-07 | トヨタ自動車株式会社 | 逆導通igbt |
JP7078133B2 (ja) * | 2018-11-16 | 2022-05-31 | 富士電機株式会社 | 半導体装置および製造方法 |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001127286A (ja) * | 1999-10-27 | 2001-05-11 | Toyota Central Res & Dev Lab Inc | 絶縁ゲート型半導体装置、およびその製造方法ならびにインバータ回路 |
JP2007311627A (ja) * | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2013138172A (ja) * | 2011-11-30 | 2013-07-11 | Denso Corp | 半導体装置 |
WO2016051970A1 (ja) * | 2014-09-30 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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