CN110808283A - 具有载流子存储区的ligbt - Google Patents

具有载流子存储区的ligbt Download PDF

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CN110808283A
CN110808283A CN201810885101.XA CN201810885101A CN110808283A CN 110808283 A CN110808283 A CN 110808283A CN 201810885101 A CN201810885101 A CN 201810885101A CN 110808283 A CN110808283 A CN 110808283A
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ligbt
carrier storage
storage region
type silicon
doped
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王学良
刘建华
郎金荣
闵亚能
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Advanced Semiconductor Manufacturing Co ltd
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Advanced Semiconductor Manufacturing Co ltd
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Abstract

本发明公开了一种具有载流子存储区的LIGBT。所述LIGBT包括N型漂移区；所述N型漂移区包括N型硅条；所述N型硅条包括载流子存储区；所述载流子存储区掺杂有氢离子。本发明的LIGBT的N型漂移区包括N型硅条，并且该N型硅条包括掺杂有氢离子的载流子存储区，从而该载流子存储区既可以表现为空穴阻挡层，在LIGBT正向导通时，能够降低饱和压降Vcesat，也可以表现为复合中心，在LIGBT关断时，能够缩短少子的寿命，从而能够缩短关断时间。

Description

具有载流子存储区的LIGBT
技术领域
本发明涉及半导体技术领域，尤其涉及一种具有载流子存储区的LIGBT。
背景技术
LIGBT(Lateral Insulated Gate Bipolar Transistor，横向绝缘栅双极型晶体管)综合了BJT(Bipolar Junction Transistor，双极型三极管)和横向功率MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor，金氧半场效晶体管)的优点，兼有高输入阻抗和低导通压降两方面的优点，在各种功率集成电路领域得到广泛的应用。
LIGBT导通时由于其漂移区的电导调制效应，可以获得较低的饱和压降。但是在LIGBT关断时，由于其漂移区内存储了大量的少数载流子(少子)，从而导致LIGBT关断时间较长。
发明内容
本发明要解决的技术问题是为了克服现有技术中LIGBT关断时间较长的缺陷，提供一种兼顾关断时间和饱和压降的具有载流子存储区的LIGBT。
本发明是通过下述技术方案来解决上述技术问题：
一种具有载流子存储区的LIGBT，其特点在于：
所述LIGBT包括N型漂移区；
所述N型漂移区包括N型硅条；
所述N型硅条包括载流子存储区；
所述载流子存储区掺杂有氢离子。
较佳地，所述N型硅条平行于所述LIGBT的沟道长度方向。
较佳地，所述N型漂移区还包括P型硅条，所述P型硅条与所述N型硅条间隔设置。
较佳地，所述P型硅条平行于所述LIGBT的沟道长度方向。
较佳地，所述氢离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述载流子存储区。
较佳地，所述N型漂移区在平行于所述LIGBT的沟道长度方向的一端包括P阱，所述P阱包括N型重掺杂区。
较佳地，所述P阱掺杂有铝离子和/或镓离子。
较佳地，所述铝离子和/或镓离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述P阱。
较佳地，所述P阱还掺杂有硼离子。
较佳地，所述载流子存储区还掺杂有磷离子。
本发明的积极进步效果在于：本发明的LIGBT的N型漂移区包括N型硅条，并且该N型硅条包括掺杂有氢离子的载流子存储区，从而该载流子存储区既可以表现为空穴阻挡层，在LIGBT正向导通时，能够降低饱和压降Vcesat，也可以表现为复合中心，在LIGBT关断时，能够缩短少子的寿命，从而能够缩短关断时间。
附图说明
图1为根据本发明实施例1的具有载流子存储区的LIGBT的结构示意图。
图2为根据本发明实施例3的具有载流子存储区的LIGBT的结构示意图。
具体实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在所述的实施例范围之中。
实施例1
本实施例提供一种具有载流子存储区的LIGBT，图1示出了本实施例的结构示意图。参见图1，本实施例的LIGBT从下至上依次包括衬底1、埋氧层2、N型漂移区3、以及位于N型漂移区3一端的P阱4、位于P阱4上方的N型重掺杂区5、位于P阱4和N型重掺杂区5上方的发射极6、位于P阱4上方的栅介质层7、位于栅介质层7上方的栅极8、位于N型漂移区3另一端的N型缓冲区9、位于N型缓冲区9上方的P型重掺杂区10、位于P型重掺杂区10上方的集电极11。
其中，N型漂移区3包括平行于LIGBT的沟道长度方向的N型硅条12，N型硅条12包括载流子存储区13，并且该载流子存储区13可以经由但不限于离子注入、扩散、蒸发、溅射的方式而掺杂有氢离子，从而载流子存储区13中空穴浓度较高。
在本实施例中，载流子存储区13还可以经由但不限于离子注入、扩散、蒸发、溅射的方式而掺杂有磷离子。
在本实施例中，可以根据实际应用自定义设置N型硅条12、载流子存储区13的个数，以及氢离子掺杂的浓度和深度。
在本实施例中，当LIGBT正向导通时，高浓度的载流子存储区13可以起到阻挡空穴的作用，使得N型漂移区3靠近载流子存储区13的一侧空穴浓度提高，并且基于电中性原理，使得更多的电子注入到N型漂移区3中，增强了电导调制效应，降低了N型漂移区的电阻，相应地，也就降低了饱和压降Vcesat。
在本实施例中，当LIGBT关断时，由于载流子存储区13的能级处在禁带中较深的位置，也即靠近禁带中央，有利于形成复合中心，从而能够促使电子和空穴成对消失。又有，载流子存储区13附近浓度较高，从而形成的高浓度的复合中心更加有效，能够进一步缩短少子的寿命，缩短LIGBT的关断时间。
本实施例的LIGBT的N型漂移区包括N型硅条，并且该N型硅条包括掺杂有氢离子的载流子存储区，从而该载流子存储区既可以表现为空穴阻挡层，在LIGBT正向导通时，能够降低饱和压降Vcesat，也可以表现为复合中心，在LIGBT关断时，能够缩短少子的寿命，从而能够缩短关断时间。
实施例2
本实施例提供的具有载流子存储区的LIGBT是对实施例1的进一步改进，在本实施例中，LIGBT的P阱4中可以经由但不限于离子注入、扩散、蒸发、溅射的方式而掺杂有铝离子和/或镓离子，其中，铝离子和/或镓离子掺杂的浓度和深度可以根据实际应用自定义设置。
在本实施例中，P阱4还可以经由但不限于离子注入、扩散、蒸发、溅射的方式而掺杂有硼离子。
在本实施例中，由于铝、镓的扩散系数大，扩散温度低，且扩散速度快，其形成的PN结是渐变结而非突变结，从而击穿电压较高，本实施例的LIGBT的可靠性更高。
实施例3
本实施例提供的具有载流子存储区的LIGBT是对实施例1的进一步改进，图2示出了本实施例的结构示意图。参见图2，本实施例较之实施例1的改进在于，本实施例LIGBT的N型漂移区3还包括平行于LIGBT的沟道长度方向、且与N型硅条12间隔的P型硅条14，形成了超结LIGBT。其中，可以根据实际应用自定义设置P型硅条14的个数。
本实施例的超结LIGBT的N型漂移区包括N型硅条，并且该N型硅条包括掺杂有氢离子的载流子存储区，从而该载流子存储区既可以表现为空穴阻挡层，在超结LIGBT正向导通时，能够降低饱和压降Vcesat，也可以表现为复合中心，在超结LIGBT关断时，能够缩短少子的寿命，从而能够缩短关断时间。
实施例4
本实施例提供的具有载流子存储区的LIGBT是对实施例3的进一步改进，在本实施例中，超结LIGBT的P阱4中可以经由但不限于离子注入、扩散、蒸发、溅射的方式而掺杂有铝离子和/或镓离子，其中，铝离子和/或镓离子掺杂的浓度和深度可以根据实际应用自定义设置。
在本实施例中，P阱4还可以经由但不限于离子注入、扩散、蒸发、溅射的方式而掺杂有硼离子。
在本实施例中，由于铝、镓的扩散系数大，扩散温度低，且扩散速度快，其形成的PN结是渐变结而非突变结，从而击穿电压较高，本实施例的超结LIGBT的可靠性更高。
虽然以上描述了本发明的具体实施方式，但是本领域的技术人员应当理解，这仅是举例说明，本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下，可以对这些实施方式做出多种变更或修改，但这些变更和修改均落入本发明的保护范围。

Claims (10)

1.一种具有载流子存储区的LIGBT，其特征在于：
所述LIGBT包括N型漂移区；
所述N型漂移区包括N型硅条；
所述N型硅条包括载流子存储区；
所述载流子存储区掺杂有氢离子。
2.如权利要求1所述的具有载流子存储区的LIGBT，其特征在于，所述N型硅条平行于所述LIGBT的沟道长度方向。
3.如权利要求1所述的具有载流子存储区的LIGBT，其特征在于，所述N型漂移区还包括P型硅条，所述P型硅条与所述N型硅条间隔设置。
4.如权利要求3所述的具有载流子存储区的LIGBT，其特征在于，所述P型硅条平行于所述LIGBT的沟道长度方向。
5.如权利要求1所述的具有载流子存储区的LIGBT，其特征在于，所述氢离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述载流子存储区。
6.如权利要求1所述的具有载流子存储区的LIGBT，其特征在于，所述N型漂移区在平行于所述LIGBT的沟道长度方向的一端包括P阱，所述P阱包括N型重掺杂区。
7.如权利要求6所述的具有载流子存储区的LIGBT，其特征在于，所述P阱掺杂有铝离子和/或镓离子。
8.如权利要求7所述的具有载流子存储区的LIGBT，其特征在于，所述铝离子和/或镓离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述P阱。
9.如权利要求7所述的具有载流子存储区的LIGBT，其特征在于，所述P阱还掺杂有硼离子。
10.如权利要求1所述的具有载流子存储区的LIGBT，其特征在于，所述载流子存储区还掺杂有磷离子。
CN201810885101.XA 2018-08-06 2018-08-06 具有载流子存储区的ligbt Pending CN110808283A (zh)

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Publication number Priority date Publication date Assignee Title
CN103794638A (zh) * 2012-10-26 2014-05-14 中国科学院微电子研究所 一种igbt器件及其制作方法
CN106920842A (zh) * 2017-05-11 2017-07-04 电子科技大学 一种具有载流子存储层的槽型soi ligbt
WO2018030444A1 (ja) * 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103794638A (zh) * 2012-10-26 2014-05-14 中国科学院微电子研究所 一种igbt器件及其制作方法
WO2018030444A1 (ja) * 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法
CN106920842A (zh) * 2017-05-11 2017-07-04 电子科技大学 一种具有载流子存储层的槽型soi ligbt

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