JPWO2016174899A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2016174899A1 JPWO2016174899A1 JP2017515402A JP2017515402A JPWO2016174899A1 JP WO2016174899 A1 JPWO2016174899 A1 JP WO2016174899A1 JP 2017515402 A JP2017515402 A JP 2017515402A JP 2017515402 A JP2017515402 A JP 2017515402A JP WO2016174899 A1 JPWO2016174899 A1 JP WO2016174899A1
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- copper
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- 239000010949 copper Substances 0.000 claims abstract description 53
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- 239000008188 pellet Substances 0.000 claims abstract description 16
- 229910000679 solder Inorganic materials 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 230000017525 heat dissipation Effects 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 238000012986 modification Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
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Abstract
Description
<第1の実施の形態>
図1は第1の実施の形態に係る半導体装置の内部構成を示す斜視図、図2は第1の実施の形態に係る半導体装置の要部拡大部分断面図である。図3は回路基板を例示する図であって、(A)はセラミック板、(B)は回路基板の一方の面、(C)は回路基板の他方の面を示す斜視図であり、図4は適用材料の物理特性例を示す図である。
<第2の実施の形態>
図5は第2の実施の形態に係る半導体装置の内部構成を示す斜視図、図6は第2の実施の形態に係る半導体装置の要部拡大部分断面図である。この図5および図6において、図1ないし図3に示した構成要素と同じまたは均等の構成要素については同じ符号を付してその詳細な説明は省略する。
<第3の実施の形態>
図7は第3の実施の形態に係る半導体装置の要部拡大断面図である。この図7において、図2に示した構成要素と同じまたは均等の構成要素については同じ符号を付してその詳細な説明は省略する。
<第4の実施の形態>
図8は第4の実施の形態に係る半導体装置の回路基板を示す平面図である。この図8において、図3および図6に示した構成要素と同じまたは均等の構成要素については同じ符号を付してその詳細な説明は省略する。
<回路基板の変形例>
図9は回路基板を構成するセラミック板の変形例を示す図であって、(A)は回路基板の第1の変形例、(B)は回路基板の第2の変形例、(C)は回路基板の第3の変形例を示している。この図9において、図8に示した構成要素と同じまたは均等の構成要素については同じ符号を付してある。また、これらの変形例では、制御端子用の貫通孔は省略してある。
12 絶縁基板(第1の絶縁基板)
12a セラミック板
12b 銅箔(第1の銅パターン)
12c 回路パターン(第2の銅パターン)
13 半導体チップ
14 回路基板(第2の絶縁基板)
14a セラミック板
14b 回路パターン(第3の銅パターン)
14c 回路パターン(第4の銅パターン)
14d ペレット
14e 貫通孔
14f 開口部
15 樹脂ケース
16,17,18 主端子
16a,17a,18a 内部端子
19,20,21,22 制御端子群
19a,19b,19c,19d,19e 制御端子
23a,23b,23c,23d,23e 内部制御端子
24 ボンディングワイヤ
25 ボンディングワイヤ(導電性部材)
26 リード板(導電性部材)
<第3の実施の形態>
図7は第3の実施の形態に係る半導体装置の要部拡大断面図である。この図7において、図2に示した構成要素と同じまたは均等の構成要素については同じ符号を付してその詳細な説明は省略する。
Claims (11)
- 放熱用の冷却ベースと、
両面に第1および第2の銅パターンが形成され、一方の面の前記第1の銅パターンが前記冷却ベースに接合された第1の絶縁基板と、
第1主面に第1主電極および少なくとも1つの制御電極を有し、第2主面に第2主電極を有し、前記第2主電極が前記第1の絶縁基板の前記第2の銅パターンに接合された半導体チップと、
両面に第3および第4の銅パターンが形成され、一方の面の前記第3の銅パターンが前記半導体チップの前記第1主電極および前記制御電極の少なくとも前記第1主電極に接合された第2の絶縁基板と、
を備え、
前記第3および第4の銅パターンは、電気的に相互に接続されている半導体装置。 - 前記第3および第4の銅パターンは、前記第2の絶縁基板に穿設された少なくとも1つの貫通孔の中に配置される銅製のペレットによって電気的に接続されている請求項1記載の半導体装置。
- 前記第2の絶縁基板は、サイズが前記半導体チップのサイズ以下である請求項1記載の半導体装置。
- 前記第4の銅パターンの外周部と前記第1の絶縁基板の前記第2の銅パターンとを熱的および電気的に接合する熱伝導率の高い導電性部材を有する請求項3記載の半導体装置。
- 前記導電性部材は、銅ワイヤまたは銅製のリード板である請求項4記載の半導体装置。
- 前記リード板は、前記第4の銅パターンと一体に形成されている請求項5記載の半導体装置。
- 前記リード板は、前記第1の絶縁基板の前記第2の銅パターンとはんだまたは溶接により接合されている請求項5記載の半導体装置。
- 前記第2の絶縁基板は、前記半導体チップ中心の位置に前記第4の銅パターンとともに貫通した孔が穿設されている請求項3記載の半導体装置。
- 前記半導体チップの少なくとも前記第1主電極は、はんだによって前記第2の絶縁基板の前記第3の銅パターンに接合されている請求項1記載の半導体装置。
- 前記半導体チップは、前記第2の銅パターンのうちの前記第1の絶縁基板の周辺側に配置された第1の領域に搭載され、一端が前記第2の絶縁基板の前記第4の銅パターンに接続された前記導電性部材の他端は、前記第2の銅パターンのうちの前記第1の絶縁基板の中央側に配置された第2の領域に接続されている請求項4記載の半導体装置。
- 前記第2の絶縁基板は、前記半導体チップの線膨張率に近い値を有するセラミック板を備え、前記セラミック板の裏面に前記第3の銅パターンが、おもて面に前記第4の銅パターンがそれぞれ形成されている請求項1記載の半導体装置。
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US11183479B2 (en) * | 2017-03-30 | 2021-11-23 | Mitsubishi Electric Corporation | Semiconductor device, method for manufacturing the same, and power conversion device |
DE102018213639A1 (de) * | 2018-08-14 | 2020-02-20 | Te Connectivity Germany Gmbh | Verfahren zum Anbringen wenigstens eines insbesondere stiftförmigen Kontaktelements auf einer Leiterbahn einer Leiterplatte, Stiftleiste zur Anbringung auf einer Leiterplatte, Verbindungsanordnung |
JP7147859B2 (ja) | 2018-10-05 | 2022-10-05 | 富士電機株式会社 | 半導体装置、半導体モジュールおよび車両 |
WO2020170553A1 (ja) | 2019-02-18 | 2020-08-27 | 富士電機株式会社 | 半導体装置 |
JP7380062B2 (ja) | 2019-10-18 | 2023-11-15 | 富士電機株式会社 | 半導体モジュール |
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