JP2018182105A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2018182105A JP2018182105A JP2017080813A JP2017080813A JP2018182105A JP 2018182105 A JP2018182105 A JP 2018182105A JP 2017080813 A JP2017080813 A JP 2017080813A JP 2017080813 A JP2017080813 A JP 2017080813A JP 2018182105 A JP2018182105 A JP 2018182105A
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- Prior art keywords
- cooler
- buffer film
- sealing member
- main surface
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
本発明の第1実施形態に係る半導体装置は、図1及び図2に示すように、セラミックスからなる冷却器10、冷却器10に接合された素子パターン層41、素子パターン層41に接合された半導体素子20、半導体素子20を封止する封止部材30を備える。冷却器10は、図1に示すように第1主面11及び第1主面11に平行に対向する第2主面12を有する。半導体素子20は、冷却器10の第1主面11に素子パターン層41の一部を介して接合されている。封止部材30は、冷却器10の第1主面11の少なくとも一部を含むように半導体素子20を封止しているが、封止部材30は更に第1主面11から第2主面12に到達するように配置される。
本発明の第1実施形態の第1変形例に係る半導体装置は、図3に示すように、封止部材30aが冷却器10の周囲を覆うように配置される点で上述の第1実施形態と異なる。なお、以下の変形例において説明しない構成、作用及び効果は、上述の第1実施形態と同様であるため、重複する説明を省略する。
本発明の第1実施形態の第2変形例に係る半導体装置は、図4に示すように、冷却器10の第2主面12に接合されたシート状のバッファ膜(密着層)61を備える。なお、第2変形例において説明しない構成、作用及び効果は、第1実施形態の第1変形例と同様であるため、重複する説明を省略する。
本発明の第1実施形態の第3変形例に係る半導体装置は、図6に示すように、複数のスリットをそれぞれ有するバッファ膜61aを有する点で第1実施形態に係る第2変形例と異なる。第3変形例において説明しない構成、作用及び効果は、第1実施形態の第2変形例と同様であるため、重複する説明を省略する。なお、図6ではバッファ膜61の表面に形成されたスリットを説明するために封止部材30aの図示を省略しているが、実際には半導体装置は封止部材30a(図4参照)を備える。
本発明の第1実施形態の第4変形例に係る半導体装置は、図9に示すように、封止部材30bがバッファ膜61の一部を露出する開口部31を有する点で第1実施形態の第2変形例と異なる。第2変形例において説明しない構成、作用及び効果は、第1実施形態の第2変形例と同様であるため、重複する説明を省略する。
本発明の第1実施形態の第5変形例に係る半導体装置は、図10に示すように、バッファ膜61cが冷却器10の第2主面12の一部を露出する開口部63を更に有する点で第1実施形態の第4変形例と異なる。第1実施形態の第5変形例において説明しない構成、作用及び効果は、第1実施形態の第4変形例と同様であるため、重複する説明を省略する。
本発明の第2実施形態に係る半導体装置は、図11に示すように、半導体素子20の両主面にそれぞれ接合される第1冷却器10a及び第2冷却器10bを備える点で第1実施形態とは異なる。第2実施形態に係る半導体装置が半導体素子20と半導体素子20を封止する封止部材30cを備える点では、第1実施形態と共通である。ただし、後述するが図11に示すように、封止部材30cが半導体素子20を封止する態様は、第1実施形態とは異なる。第2実施形態において説明しない他の構成、作用及び効果は、上述の第1実施形態と同様であり、重複するため省略する。
本発明の第2実施形態の第1変形例に係る半導体装置は、図12に示すように、封止部材30dが第2主面12a及び第4主面12bに到達するように配置される点で上述の第2実施形態と異なる。以下の変形例において説明しない構成、作用及び効果は、上述の第1及び第2実施形態と同様であるため、重複する説明を省略する。
本発明の第2実施形態の第2変形例に係る半導体装置は、図17に示すように、第1バッファ膜61及び第2バッファ膜62を備える点で図12等に示した第2実施形態の第1変形例と異なる。第1バッファ膜61は第1冷却器10aの第2主面12aに接合され、第2バッファ膜62は第2冷却器10bの第4主面12bに接合されている。なお、以下の変形例において説明しない構成、作用及び効果は、上述の第1〜第3実施形態と同様であるため、重複する説明を省略する。
本発明の第2実施形態の第3変形例に係る半導体装置は、図18に示すように、複数のスリットをそれぞれ有する第1バッファ膜(図示省略)及び第2バッファ膜62aを備える点で第2実施形態の第2変形例と異なる。第2バッファ膜62aは第2冷却器10bの第4主面12bに配置されているので図示されているが、第1バッファ膜は第1冷却器10aの第2主面12aに配置されているので図18では見えない。第2実施形態の第3変形例において説明しない構成、作用及び効果は、第2実施形態の第2変形例と同様であるため、重複する説明を省略する。
本発明の第2実施形態の第4変形例に係る半導体装置は、図20に示すように、封止部材30eが下面において第1バッファ膜61を露出する第1開口部31aを有する点で図17の第2変形例と異なる。又、封止部材30eは上面で第2バッファ膜62を露出するように形成された第2開口部31bを有する点でも第2変形例と異なる。第4変形例において説明しない構成、作用及び効果は、第2実施形態の第2変形例と同様であるため、重複する説明を省略する。
本発明の第2実施形態の第5変形例に係る半導体装置は、図21に示すように、第1バッファ膜61cが第1冷却器10aの第2主面12aの一部を露出する開口部63を更に有する点で第2実施形態の第4変形例と異なる。また、第2バッファ膜62cが第2冷却器10bの第4主面12bの一部を露出する開口部64を有する点でも第4変形例と異なる。第5変形例において説明しない構成、作用及び効果は、第2実施形態の第4変形例と同様であるため、重複する説明を省略する。
上記のように、本発明の第1及び第2の実施形態を記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
11,11a 第1主面
11b 第3主面
12,12a 第2主面
12b 第4主面
13,13a,13b 流路
20 半導体素子
21,22,23,24,25 接合材
30,30a,30b,30c,30d,30e,30f 封止部材
31,31a,31b 開口部
61,62,62a,62b バッファ膜
Claims (18)
- セラミックスからなり、互いに対向する第1主面及び第2主面並びに互いに対向する2つの側面を有する冷却器と、
前記第1主面に接合された複数の導電性パターン層と、
前記導電性パターン層の少なくとも一部を介して前記第1主面に搭載された半導体素子と、
樹脂及びフィラーからなり、前記半導体素子及び前記導電性パターン層を封止する封止部材と
を備え、前記封止部材は、少なくとも前記第1主面及び前記2つの側面を覆うことを特徴とする半導体装置。 - 前記冷却器は、前記第1主面と前記第2主面との間に冷媒となる流体を流す流路を有することを特徴とする請求項1に記載の半導体装置。
- 前記封止部材は、前記第2主面を覆い、前記冷却器を囲むことを特徴とする請求項1に記載の半導体装置。
- 前記第2主面に接合され、前記セラミックスより大きい値となる熱膨張係数を有する金属からなるバッファ膜を更に備えることを特徴とする請求項1に記載の半導体装置。
- 前記第2主面に接合され、前記セラミックスより大きい値となる熱膨張係数を有する金属からなるバッファ膜を更に備えることを特徴とする請求項3に記載の半導体装置。
- 前記封止部材は、更に、前記2つの側面から前記第2主面の周辺部を覆い、
前記第2主面における封止部材の端部が、前記バッファ膜の表面に位置することを特徴とする請求項4に記載の半導体装置。 - 前記封止部材は、前記バッファ膜の表面を露出する開口部を有するように、前記第2主面の周辺部を覆うことを特徴とする請求項6に記載の半導体装置。
- 前記バッファ膜は、前記冷却器の表面を露出する開口部を有するように、前記第2主面の周辺部を覆い、
前記封止部材は、前記バッファ膜及び前記冷却器の表面を露出する開口部を有するように、前記第2主面の周辺部を覆うことを特徴とする請求項6に記載の半導体装置。 - 前記バッファ膜は、少なくとも前記第2主面と反対側の面に配置されたスリットを有することを特徴とする請求項4乃至8の何れか1項に記載の半導体装置。
- セラミックスからなり、対向する第1主面及び第2主面並びに互いに対向する2つの第1側面を有する第1冷却器と、
前記セラミックスからなり、前記第1主面に平行で且つ互いに対向する第3及び第4主面並びに互いに対向する2つの第2側面を有する第2冷却器と、
前記第1主面に接合された複数の第1導電性パターン層と、
前記第3主面に接合された複数の第2導電性パターン層と、
前記第1導電性パターン層の少なくとも一部及び前記第2導電性パターン層の少なくとも一部を介して前記第1主面及び前記第3主面のそれぞれに搭載された両主面を有する半導体素子と、
樹脂及びフィラーからなり、前記半導体素子並びに前記第1及び第2導電性パターン層を封止する封止部材と
を備え、前記封止部材は、少なくとも前記第1主面及び前記2つの第1側面並びに前記第3主面及び前記2つの第2側面を覆うことを特徴とする半導体装置。 - 前記第1冷却器は、前記第1主面と前記第2主面との間に冷媒となる流体を流す第1流路を有し、
前記第2冷却器は、前記第3主面と前記第4主面との間に冷媒となる流体を流す前記第1流路に平行な第2流路を有することを特徴とする請求項10に記載の半導体装置。 - 前記封止部材は、前記第2主面及び前記第4主面を覆い、前記第1冷却器及び前記第2冷却器を囲むことを特徴とする請求項10の半導体装置。
- 前記第2主面に接合され、前記セラミックスより大きい値となる熱膨張係数を有する金属からなる第1バッファ膜と、
前記第4主面に接合され、前記セラミックスより大きい値となる熱膨張係数を有する金属からなる第2バッファ膜と
を更に備えることを特徴とする請求項10に記載の半導体装置。 - 前記第2主面に接合され、前記セラミックスより大きい値となる熱膨張係数を有する金属からなる第1バッファ膜と、
前記第4主面に接合され、前記セラミックスより大きい値となる熱膨張係数を有する金属からなる第2バッファ膜と
を更に備えることを特徴とする請求項12に記載の半導体装置。 - 前記封止部材は、前記2つの第1側面から前記第2主面の周辺部を覆い、前記第2主面における端部が前記第1バッファ膜の表面に位置し、前記2つの第2側面から前記第4主面の周辺部を覆い、前記第4主面における端部が前記第2バッファ膜の表面に位置することを特徴とする請求項13に記載の半導体装置。
- 前記封止部材は、前記第1バッファ膜の表面を露出する第1開口部及び前記第2バッファ膜の表面を露出する第2開口部の少なくとも何れかを有することを特徴とする請求項15に記載の半導体装置。
- 前記第1バッファ膜は、前記第1冷却器の表面を露出する開口部を有するように第2主面の周辺部を覆い、前記封止部材は、前記第1バッファ膜及び前記第1冷却器の表面を露出する開口部を有するように、前記第2主面の周辺部を覆い、
前記第2バッファ膜は、前記第2冷却器の表面を露出する開口部を有するように第4主面の周辺部を覆い、前記封止部材は、前記第2バッファ膜及び前記第2冷却器の表面を露出する開口部を有するように、前記第4主面の周辺部を覆うことを特徴とする請求項15に記載の半導体装置。 - 前記第1バッファ膜は、少なくとも前記第2主面と反対側の面に配置された第1スリットを有し、前記第2バッファ膜は、少なくとも前記第4主面と反対側の面に配置された第2スリットを有することを特徴とする請求項13乃至17の何れか1項に記載の半導体装置。
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