JPWO2016157589A1 - 放射線検出器用ubm電極構造体、放射線検出器及びそれらの製造方法 - Google Patents
放射線検出器用ubm電極構造体、放射線検出器及びそれらの製造方法 Download PDFInfo
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- JPWO2016157589A1 JPWO2016157589A1 JP2017509150A JP2017509150A JPWO2016157589A1 JP WO2016157589 A1 JPWO2016157589 A1 JP WO2016157589A1 JP 2017509150 A JP2017509150 A JP 2017509150A JP 2017509150 A JP2017509150 A JP 2017509150A JP WO2016157589 A1 JPWO2016157589 A1 JP WO2016157589A1
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Abstract
Description
金属電極11及び電極層560は、金(Au)、白金(Pt)、イリジウム(Ir)等の貴金属を用いた薄膜で形成される。一方、電極層13は、基板20上に無電解めっきにより形成した白金(Pt)層、又は、金(Au)層で形成され、白金(Pt)を好適に用いることができる。本実施形態において、金属電極11は共通電極であり、電極層13はピクセル電極である。また、電極層560は電極層13に対応し、バンプ570を介して電極層13からの電流を受ける。
基板20は、CdTe基板又はCdZnTe基板である。また、基板20は、伝導性を制御するための不純物を含んでもよい。すなわち、基板20は、CdTeからなる基板又はCdZnTeからなる基板であってもよく、CdTe又はCdZnTeに伝導性を制御するための不純物を含む基板であってもよい。伝導性を制御するための不純物として、例えば、塩素(Cl)、インジウム(In)等を挙げることができるが、これらに限定されるものではない。基板20は、薄い板状に形成されており、例えば、金属電極11及び電極層13が形成される主面は、(111)面となっている。結晶方位[111]は、CdZnTeにおける極性軸であるため、基板20の表面のうち第2の面側の表面組成はCdの割合が高く、第1の面側の表面組成はTeの割合が高くなっている。
本発明に係る電極層13は、基板20への密着性が0.5N/cm以上であり、好ましくは3.93N/cm以上である。このような電極層13の基板20への高い密着性は、従来の放射線検出器用UBM電極構造体では得られていない。このような高い密着性を有する本発明に係る放射線検出器用UBM電極構造体100においては、UBM構造130を形成しても剥がれることはない。基板20への密着性が0.5N/cmより低いと、UBM構造形成、半田接合工程、又はPt層への信号線の接合時に剥離が生じやすくなり、好ましくない。本発明に係る電極層13は、基板20との十分な密着性を有することにより、UBM構造形成時での剥離が生じず、半田接合工程によりバンプ570を介した集積回路基板550との接合時にも電極層13の剥離が生じることはない。
本発明においては、電極層13の基板20への高い密着性を備えるが、このような高い密着性は、電極層13形成前の基板20の最表面の酸素量と関係することを、本発明者らは初めて見出した。本発明に係る放射線検出器用UBM電極構造体100においては、基板20の電極層13形成前の最表面のX線光電子分光法(XPS)により測定した酸素量が40 atm%未満である。基板20の最表面のX線光電子分光法により測定した酸素量は、Teの酸化物の含有量に関係し、酸素量が40 atm%以上となると、基板20の表面が疎水性に近く電極層13の形成時に、電極層13と基板20との結合が弱いため電極層13の密着性が低下し、電極層13が基板20から剥離しやすくなる。一方、基板20の電極層13の形成前の最表面のX線光電子分光法により測定した酸素量が40 atm%未満である本発明に係る放射線検出器用UBM電極構造体100は、基板20の最表面でのTeの酸化物の含有量が低いため、基板表面の親水性が向上し、電極層13の形成時に電極層13と基板20との結合が強まり、電極層13の密着性が向上するものと考えられる。
実施形態に係る放射線検出器1000の製造方法について説明する。放射線検出器1000の製造方法は、例えば、基板製造工程、電極形成工程、ダイシング工程及び集積回路基板接続工程を含むが、これらに限定されるものではない。図4及び5は、本発明の一実施形態に係る放射線検出器1000の製造工程を示す模式図である。
上述した実施形態に準じて、ポリシング(鏡面研磨)処理を行った30mm×30mmのCdZnTe基板(111)を用い、ポリシング処理により形成された加工変質層を除去するため、CdZnTe基板を1容量%臭素メタノール溶液に浸漬して基板表面を20μmエッチングした。
CdZnTe基板をメタノールに浸漬し、室温で10分間、超音波洗浄した。その後、CdZnTe基板をアセトンに浸漬し、室温で10分間超音波洗浄した。続いて、CdZnTe基板をソルファイン(登録商標)−クリーナー1700(昭和電工株式会社)に80℃で5分間、浸漬した後、イソプロピルアルコール(IPA)に常温で5分間浸漬を2回繰り返し、自然乾燥した。
CdZnTe基板(111)を用意し、CdZnTe基板の面上にフォトレジストを塗布し、フォトリソグラフィー法により電極パターン状の膜厚3μmのレジストパターンを形成した。フォトレジスト膜で被覆されたCdZnTe基板を、臭素:臭化水素水:水をモル濃度で1:50:50の割合で混合したエッチング液を用いて基板をエッチングした。基板のレジストパターン形成面の露出部分に存在する不純物や、基板の切出し工程で発生する加工変質層などを除去した。
実施例2として、Clを100ppmの濃度で添加したCdZnTe基板を用い、無電解めっきによる白金電極層の形成において、めっき液の温度を55℃に加熱した浴を用いて行った以外は、実施例1と同様に白金電極パターンを形成した。
比較例1として、基板の洗浄をメタノール、アセトンのみで行い、無電解めっきにおいて水溶液の撹拌を行わず静置したこと以外は、上述した実施例1と同様にパターン電極を形成した。
比較例2として、実施例2と同一のインゴットから切り出されたCdZnTe基板を用い、比較例1と同様に白金電極パターンを形成した。
実施例1及び2、比較例1及び2で形成したPt電極について、日東電工・エレップマスキングN−380(ブルーテープ)を貼り付けた後、テープを剥がして一緒にPt電極が剥離しないか目視により確認した。本試験はJIS Z 1522(セロハン粘着テープ)記載の実施方法に準拠して行った。実施例1及び2のPt電極は10試料を用いた試験で10試料ともCdZnTe基板上に保持され、剥離が認められなかった。一方、比較例1及び2で形成したPt電極では密着性が小さく、全ての試料で剥離した。
上述した実施例1及び比較例1と同様の方法でPt電極を作製し、さらに、スパッタにより、膜厚500nmのNi層、膜厚50nmのAu層を形成して、10個の試料のUBM構造を作製した。このUBM構造の作製工程において、Pt電極の剥離は認められなかった。また、UBM構造に半田接合を実施した結果でも、Pt電極の剥離は認められなかった。
実施例1及び2、比較例1及び2のCdZnTe基板について、電極形成前の工程で作業を止め、X線光電子分光法による最表面の元素分析を行った。元素分析は、アルバックファイ社PHI5000 VersaPro IIを用いて行った。炭素(C)、酸素(O)、カドミウム(Cd)及びテルル(Te)のスペクトルを図6〜図9に示す。図6に、実施例1及び比較例1のTe3d5、O1s、Cd3d5及びC1sのスペクトルを示し、図7に、Cd MNN及びTe MNNのスペクトルを示す。また、図8に、実施例2及び比較例2のTe3d5、O1s、Cd3d5及びC1sのスペクトルを示し、図9に、Cd MNN及びTe MNNのスペクトルを示す。
Claims (12)
- CdTe基板又はCdZnTe基板と、前記CdTe基板又は前記CdZnTe基板に配置したPt電極層とを備え、
前記CdTe基板又は前記CdZnTe基板に対する前記Pt電極層の密着性が0.5N/cm以上であることを特徴とする放射線検出器用UBM電極構造体。 - 前記CdTe基板又は前記CdZnTe基板に対する前記Pt電極層の密着性が、3.93N/cm以上であることを特徴とする請求項1に記載の放射線検出器用UBM電極構造体。
- 前記Pt電極層を形成する前の前記CdTe基板又は前記CdZnTe基板の最表面のX線光電子分光法により測定した酸素量が40atm%未満であることを特徴とする請求項1に記載の放射線検出器用UBM電極構造体。
- 前記CdTe基板又は前記CdZnTe基板が伝導性を制御するための不純物を含むことを特徴とする請求項1に記載の放射線検出器用UBM電極構造体。
- 前記CdTe基板又は前記CdZnTe基板に対して前記Pt電極層の上にNi層を有し、前記Ni層の上にAu層をさらに有する、UBM構造を有する電極体であることを特徴とする請求項1に記載の放射線検出器用UBM電極構造体。
- 請求項1に記載の放射線検出器用UBM電極構造体により構成された放射線検出素子と、
前記Pt電極層にバンプを介して配置された検出回路と、を備えることを特徴とする放射線検出器。 - CdTe基板又はCdZnTe基板を準備し、
前記CdTe基板又は前記CdZnTe基板にメタノール洗浄及びアセトン洗浄を順次行い、
水酸基を含まない炭素数9以上12以下の炭化水素からなる溶剤を用いて前記CdTe基板又は前記CdZnTe基板を洗浄し、
無電解めっきによりPt電極層を形成することを特徴とする放射線検出器用UBM電極構造体の製造方法。 - 前記CdTe基板又は前記CdZnTe基板が伝導性を制御するための不純物を含むことを特徴とする請求項7に記載の放射線検出器用UBM電極構造体の製造方法。
- 前記無電解めっきは、45℃以上55℃以下に加熱した0.01重量%以上0.1重量%以下の塩化白金酸水溶液を撹拌しながら、前記塩化白金酸水溶液に前記CdTe基板又は前記CdZnTe基板を浸漬することを特徴とする請求項7に記載の放射線検出器用UBM電極構造体の製造方法。
- 臭素−メタノール混合溶液又は臭素−臭素酸水溶液混合溶液で前記CdTe基板又は前記CdZnTe基板をエッチングし、
前記無電解めっきにより前記Pt電極層を形成することを特徴とする請求項7に記載の放射線検出器用UBM電極構造体の製造方法。 - 前記CdTe基板又は前記CdZnTe基板に対して前記Pt電極層の上にNi層を形成し、前記Ni層の上にAu層をさらに形成して、UBM構造を有する電極体を形成することを特徴とする請求項7に記載の放射線検出器の製造方法。
- 請求項7に記載の製造方法により製造した放射線検出器用UBM電極構造体を含む前記CdTe基板又は前記CdZnTe基板を所定の形状に切断して放射線検出素子を形成し、
バンプを介して検出回路を前記放射線検出素子の前記Pt電極層に接続することを特徴とする放射線検出器の製造方法。
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JP2013157494A (ja) * | 2012-01-31 | 2013-08-15 | Jx Nippon Mining & Metals Corp | 放射線検出素子、放射線検出器、および放射線検出素子の製造方法 |
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EP3279946B1 (en) | 2019-12-04 |
US10199343B2 (en) | 2019-02-05 |
US20180061792A1 (en) | 2018-03-01 |
EP3279946A1 (en) | 2018-02-07 |
WO2016157589A1 (ja) | 2016-10-06 |
JP6570619B2 (ja) | 2019-09-04 |
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