JPWO2016098199A1 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000011084 recovery Methods 0.000 description 12
- 102100028146 F-box/WD repeat-containing protein 2 Human genes 0.000 description 5
- 101001060245 Homo sapiens F-box/WD repeat-containing protein 2 Proteins 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置を示す平面図である。図2は図1のI−IIに沿った断面図である。この半導体装置は1つの半導体基板にIGBT(Insulated Gate Bipolar Transistor)1とFWD(Free Wheeling Diode)2が形成されたRC−IGBTである。また、RC−IGBTにはIGBT1やFWD2として動作する領域以外に配線領域3が存在し、それらの外周に終端領域4が存在する。
図4は、本発明の実施の形態2に係る半導体装置を示す平面図である。図5は図4のI−IIに沿った断面図である。複数のトレンチゲート15が形成されている。配線領域3及び終端領域4とFWD2との間の領域にIGBT1が形成されている。配線領域3及び終端領域4の近傍にIGBT1を形成することによって、素子の有効面積(通電可能なIGBT1とFWD2の合計面積)を小さくすることなく、FWD2のリカバリー損失を低減することができる。
図6は、本発明の実施の形態3に係る半導体装置を示す平面図である。平面視においてゲート配線13で囲まれた領域内でIGBT1とFWD2が一定の間隔で繰り返し形成されている。RC−IGBT内のIGBT1とFWD2は電流を通電することで発熱する。素子の最大定格温度は一般的に150〜175℃であり、発熱した素子の温度を下げるために、RC−IGBT裏面側に接触した放熱フィンを空冷もしくは水冷方式で冷却する必要がある。通常の使用方法において、IGBT1に電流が流れる期間とFWD2に電流が流れる期間は交互であり、IGBT1とFWD2の温度がピークになるタイミングにはずれがある。そこで、IGBT1とFWD2を一定の間隔で繰り返し形成することで、IGBT1とFWD2の一方の通電時の熱を他方の領域の放熱フィンにも逃がすことが可能となり、効率的に素子の温度を下げることができる。また、その分だけチップを縮小でき、冷却機構も簡素化できるので、素子や素子を内蔵するインバーターのコストを低減することができる。
図7は、本発明の実施の形態4に係る半導体装置を示す断面図である。本実施の形態ではp型ウエル12はp型アノード層10に対して深さが深く不純物濃度が低い。これにより、FWD2をp型ウエル12の近傍に形成してもFWD2の通電時にp型ウエル12から注入されるホールの量を低減することができ、FWD2のリカバリー損失を低減することができる。
図8は、本発明の実施の形態5に係る半導体装置を示す断面図である。本実施の形態ではp型ウエル12はp型アノード層10に対して不純物濃度と深さが同じである。これにより、FWD2をp型ウエル12の近傍に形成してもFWD2の通電時にp型ウエル12から注入されるホールの量を低減することができ、FWD2のリカバリー損失を低減することができる。
Claims (8)
- n型ドリフト層と、前記n型ドリフト層の表面に形成されたp型ベース層及びn型エミッタ層と、前記n型ドリフト層の裏面に形成されたp型コレクタ層とを有するIGBT(Insulated Gate Bipolar Transistor)と、
前記n型ドリフト層と、前記n型ドリフト層の表面に形成されたp型アノード層と、前記n型ドリフト層の裏面に形成されたn型カソード層とを有するFWD(Free Wheeling Diode)と、
配線領域と終端領域において前記n型ドリフト層の表面に形成されたp型ウエルと、
前記配線領域において前記p型ウエル上に形成された配線とを備え、
前記p型ウエルは前記p型アノード層に対して不純物濃度が高くかつ深さが深く、
前記p型ウエルは、前記n型カソード層の直上には形成されておらず、前記n型カソード層の直上領域から離れていることを特徴とする半導体装置。 - 前記p型ウエルは前記n型カソード層の直上領域から少なくとも前記n型ドリフト層の厚み以上離れていることを特徴とする請求項1に記載の半導体装置。
- 前記FWDの形成領域には前記n型エミッタ層は形成されておらず、
前記p型ベース層と前記p型アノード層は深さと濃度が同じであることを特徴とする請求項1又は2に記載の半導体装置。 - 前記配線領域及び前記終端領域と前記FWDの形成領域との間の領域に前記IGBTが形成されていることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 平面視において前記IGBTと前記FWDが一定の間隔で繰り返し形成されていることを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- n型ドリフト層と、前記n型ドリフト層の表面に形成されたp型ベース層及びn型エミッタ層と、前記n型ドリフト層の裏面に形成されたp型コレクタ層とを有するIGBTと、
前記n型ドリフト層と、前記n型ドリフト層の表面に形成されたp型アノード層と、前記n型ドリフト層の裏面に形成されたn型カソード層とを有するFWDと、
配線領域と終端領域において前記n型ドリフト層の表面に形成されたp型ウエルと、
前記配線領域において前記p型ウエル上に形成された配線とを備え、
前記p型ウエルは前記p型アノード層に対して深さが深くかつ不純物濃度が低いことを特徴とする半導体装置。 - n型ドリフト層と、前記n型ドリフト層の表面に形成されたp型ベース層及びn型エミッタ層と、前記n型ドリフト層の裏面に形成されたp型コレクタ層とを有するIGBTと、
前記n型ドリフト層と、前記n型ドリフト層の表面に形成されたp型アノード層と、前記n型ドリフト層の裏面に形成されたn型カソード層とを有するFWDと、
配線領域と終端領域において前記n型ドリフト層の表面に形成されたp型ウエルと、
前記配線領域において前記p型ウエル上に形成された配線とを備え、
前記p型ウエルは前記p型アノード層に対して不純物濃度と深さが同じであることを特徴とする半導体装置。 - 前記p型ウエルと前記p型アノード層はP型不純物を同時に注入及び拡散することで形成されることを特徴とする請求項7に記載の半導体装置。
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JP2017208413A (ja) * | 2016-05-17 | 2017-11-24 | 株式会社デンソー | 半導体装置 |
JP6854598B2 (ja) | 2016-07-06 | 2021-04-07 | ローム株式会社 | 半導体装置 |
CN113506800A (zh) * | 2016-12-16 | 2021-10-15 | 富士电机株式会社 | 半导体装置 |
JP6881599B2 (ja) | 2017-12-06 | 2021-06-02 | 富士電機株式会社 | 半導体装置 |
JP7095303B2 (ja) * | 2018-02-14 | 2022-07-05 | 富士電機株式会社 | 半導体装置 |
CN111052393B (zh) | 2018-02-14 | 2023-11-14 | 富士电机株式会社 | 半导体装置 |
CN111033751B (zh) | 2018-02-14 | 2023-08-18 | 富士电机株式会社 | 半导体装置 |
DE112019000095T5 (de) | 2018-03-15 | 2020-09-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP7000971B2 (ja) * | 2018-04-17 | 2022-01-19 | 三菱電機株式会社 | 半導体装置 |
CN112543993A (zh) * | 2019-02-07 | 2021-03-23 | 富士电机株式会社 | 半导体装置 |
JP7149899B2 (ja) * | 2019-06-07 | 2022-10-07 | 三菱電機株式会社 | 半導体装置 |
JP2021128993A (ja) * | 2020-02-13 | 2021-09-02 | サンケン電気株式会社 | 半導体装置およびスイッチングシステム |
JP7227999B2 (ja) * | 2021-03-16 | 2023-02-22 | ローム株式会社 | Rc-igbt半導体装置 |
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JPH1197715A (ja) * | 1997-09-19 | 1999-04-09 | Toshiba Corp | 半導体装置 |
JP2007227806A (ja) * | 2006-02-24 | 2007-09-06 | Denso Corp | 半導体装置 |
JP2007227982A (ja) * | 2007-06-12 | 2007-09-06 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2010186805A (ja) * | 2009-02-10 | 2010-08-26 | Fuji Electric Systems Co Ltd | 半導体装置 |
JP2011243694A (ja) * | 2010-05-17 | 2011-12-01 | Denso Corp | 半導体装置 |
JP2012033897A (ja) * | 2010-07-01 | 2012-02-16 | Denso Corp | 半導体装置 |
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JP2014103376A (ja) * | 2012-09-24 | 2014-06-05 | Toshiba Corp | 半導体装置 |
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US9972618B2 (en) | 2018-05-15 |
US20170162562A1 (en) | 2017-06-08 |
JP6269860B2 (ja) | 2018-01-31 |
CN107112324A (zh) | 2017-08-29 |
WO2016098199A1 (ja) | 2016-06-23 |
DE112014007266T5 (de) | 2017-09-07 |
DE112014007266B4 (de) | 2024-05-29 |
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