JPWO2015182363A1 - 集積mos型バリキャップおよびこれを有する電圧制御発振器、フィルター - Google Patents
集積mos型バリキャップおよびこれを有する電圧制御発振器、フィルター Download PDFInfo
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- JPWO2015182363A1 JPWO2015182363A1 JP2016523405A JP2016523405A JPWO2015182363A1 JP WO2015182363 A1 JPWO2015182363 A1 JP WO2015182363A1 JP 2016523405 A JP2016523405 A JP 2016523405A JP 2016523405 A JP2016523405 A JP 2016523405A JP WO2015182363 A1 JPWO2015182363 A1 JP WO2015182363A1
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- 239000003990 capacitor Substances 0.000 claims abstract description 36
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000010355 oscillation Effects 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0808—Varactor diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
- H03B5/368—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
Abstract
Description
III 集積MOS型バリキャップ
50,50A,50B,50C、60 バリキャップ
50A1,50B1,50C1 単位バリキャップ
Vc 制御電圧
V1 直流電圧
f0 発振周波数
Claims (6)
- 複数のバリキャップを並列に接続して構成したバリキャップの集合体であって、
各バリキャップは、共通かつ唯一のプロセス条件で作製されたMOS型キャパシタであり、
しかも前記各バリキャップは、
第1の電極となる第1導電型半導体基板上に容量絶縁膜を介して形成された第2の電極となる導電体層、前記第1導電型半導体基板の前記導電体層に対向する領域に近接した表面近傍に形成された第2導電型不純物領域を有するとともに、
前記各バリキャップには、前記第2導電型不純物領域に、前記第1導電型半導体基板および前記第2導電型不純物領域からなるダイオードの逆方向電圧となり、かつ電圧が異なる複数種類の直流電圧のうちのいずれか一種を印加した状態で、前記導電体層に制御電圧を印加することにより、前記第1の電極となる前記第1導電型半導体基板および前記第2の電極となる前記導電体層の間の容量要素としての容量値を変化させるように構成したことを特徴とする集積MOS型バリキャップ。 - 複数のバリキャップを並列に接続して構成したバリキャップの集合体であって、
各バリキャップは、共通かつ唯一のプロセス条件で作製されたMOS型キャパシタであり、
しかも前記各バリキャップは、
第1の電極となる第1導電型半導体基板上に容量絶縁膜を介して形成された第2の電極となる導電体層、前記第1導電型半導体基板の前記導電体層に対向する領域に近接した表面近傍に形成された第2導電型不純物領域および前記第1導電型半導体基板の前記導電体層に覆いつくされるように、前記導電体層に対向する領域のみの表面近傍に形成された第1導電型の高濃度層を有するとともに、
前記各バリキャップには、前記第2導電型不純物領域に前記第1導電型半導体基板および前記第2導電型不純物領域からなるダイオードの逆方向電圧となり、かつ電圧が異なる複数種類の直流電圧のうちのいずれか一種を印加した状態で、前記導電体層に制御電圧を印加することにより、前記第1の電極となる前記第1導電型半導体基板および前記第2の電極となる前記導電体層の間の容量要素としての容量値を変化させるように構成したことを特徴とする集積MOS型バリキャップ。 - 請求項1または請求項2に記載する集積MOS型バリキャップにおいて、
前記各バリキャップは、同一の前記直流電圧が印加される複数個の単位バリキャップを並列に接続してなり、各単位バリキャップに接続される配線を適宜変更することで、前記制御電圧に対する任意の容量特性を有するものとしたことを特徴とする集積MOS型バリキャップ。 - 請求項3において、前記配線の変更を各単位バリキャップに接続されるフューズを選択的に切断することにより前記制御電圧に対する任意の容量特性を有するものとしたことを特徴とする集積MOS型バリキャップ。
- 請求項1〜請求項4のいずれか一つに記載する集積MOS型バリキャップを発振周波数を規定する可変容量素子として有することを特徴とする電圧制御発振器。
- 請求項1〜請求項4のいずれか一つに記載する集積MOS型バリキャップを遮断周波数を規定する可変容量素子として有することを特徴とするフィルター。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014113482 | 2014-05-30 | ||
JP2014113482 | 2014-05-30 | ||
PCT/JP2015/063513 WO2015182363A1 (ja) | 2014-05-30 | 2015-05-11 | 集積mos型バリキャップおよびこれを有する電圧制御発振器、フィルター |
Publications (2)
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JPWO2015182363A1 true JPWO2015182363A1 (ja) | 2017-04-20 |
JP6395191B2 JP6395191B2 (ja) | 2018-09-26 |
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US (1) | US9847433B2 (ja) |
JP (1) | JP6395191B2 (ja) |
TW (1) | TW201608639A (ja) |
WO (1) | WO2015182363A1 (ja) |
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KR101743088B1 (ko) * | 2016-03-16 | 2017-06-02 | 숭실대학교 산학협력단 | 차동 구조의 집적 회로에 적용되는 가변 캐패시터 |
JP6870291B2 (ja) * | 2016-11-18 | 2021-05-12 | セイコーエプソン株式会社 | 発振回路、回路装置、発振器、電子機器及び移動体 |
CN109709862B (zh) * | 2019-01-04 | 2021-05-07 | 华大半导体有限公司 | 一种可编程的可变电阻器 |
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JPS5799787A (en) * | 1980-12-12 | 1982-06-21 | Clarion Co Ltd | Variable capacitance device |
JPH0927732A (ja) * | 1995-07-12 | 1997-01-28 | Nippondenso Co Ltd | プログラマブルキャパシタアレイ |
JPH09307356A (ja) * | 1996-05-13 | 1997-11-28 | Nec Corp | 水晶発振回路 |
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JP2001210788A (ja) * | 2000-01-24 | 2001-08-03 | Mitsubishi Electric Corp | 半導体装置 |
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-
2015
- 2015-05-11 US US15/314,712 patent/US9847433B2/en active Active
- 2015-05-11 WO PCT/JP2015/063513 patent/WO2015182363A1/ja active Application Filing
- 2015-05-11 JP JP2016523405A patent/JP6395191B2/ja active Active
- 2015-05-26 TW TW104116864A patent/TW201608639A/zh unknown
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5799787A (en) * | 1980-12-12 | 1982-06-21 | Clarion Co Ltd | Variable capacitance device |
JPH0927732A (ja) * | 1995-07-12 | 1997-01-28 | Nippondenso Co Ltd | プログラマブルキャパシタアレイ |
JPH09307356A (ja) * | 1996-05-13 | 1997-11-28 | Nec Corp | 水晶発振回路 |
JP2014039043A (ja) * | 1997-09-11 | 2014-02-27 | Telefon Ab L M Ericsson | 電気デバイス |
JP2000252480A (ja) * | 1998-12-28 | 2000-09-14 | Interchip Kk | Mos型キャパシタ及び半導体集積回路装置 |
GB2363927A (en) * | 1999-02-26 | 2002-01-09 | Intel Corp | An improved light sensor with increased dynamic range |
JP2001210788A (ja) * | 2000-01-24 | 2001-08-03 | Mitsubishi Electric Corp | 半導体装置 |
JP2004120728A (ja) * | 2002-09-25 | 2004-04-15 | Renesas Technology Corp | 発振回路および通信用半導体集積回路 |
US20050151575A1 (en) * | 2004-01-14 | 2005-07-14 | Dialog Semiconductor Gmbh | High Q linear controlled variable capacitor using translinear amplifier |
JP2007158766A (ja) * | 2005-12-06 | 2007-06-21 | Renesas Technology Corp | 半導体集積装置 |
JP2009004972A (ja) * | 2007-06-20 | 2009-01-08 | Kawasaki Microelectronics Kk | 半導体集積回路 |
JP2012064915A (ja) * | 2009-12-18 | 2012-03-29 | Nippon Dempa Kogyo Co Ltd | 電圧制御可変容量及び電圧制御発振器 |
Also Published As
Publication number | Publication date |
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TW201608639A (zh) | 2016-03-01 |
JP6395191B2 (ja) | 2018-09-26 |
WO2015182363A1 (ja) | 2015-12-03 |
US9847433B2 (en) | 2017-12-19 |
US20170200834A1 (en) | 2017-07-13 |
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