JPWO2014083717A1 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
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- JPWO2014083717A1 JPWO2014083717A1 JP2014549756A JP2014549756A JPWO2014083717A1 JP WO2014083717 A1 JPWO2014083717 A1 JP WO2014083717A1 JP 2014549756 A JP2014549756 A JP 2014549756A JP 2014549756 A JP2014549756 A JP 2014549756A JP WO2014083717 A1 JPWO2014083717 A1 JP WO2014083717A1
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- heat dissipation
- resin case
- inclined portion
- dissipation substrate
- cooling fin
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- 229920005989 resin Polymers 0.000 claims abstract description 127
- 239000011347 resin Substances 0.000 claims abstract description 127
- 230000017525 heat dissipation Effects 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 238000001816 cooling Methods 0.000 claims abstract description 61
- 238000003825 pressing Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005452 bending Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
図1は、この発明の実施の形態1のパワーモジュールの断面構造模式図である。図1(a)に示すように、パワーモジュール100は、樹脂ケース6、冷却フィン10、押さえ手段である押さえ部品13、放熱基板20を備えている。樹脂ケース6は、外周部に貫通穴である通し穴15を備えている。冷却フィン10は、外周部にネジ穴16を備えている。
また、押さえ部品13が熱伝導の良好な金属製であれば、パワー半導体素子4で発生した熱を、放熱基板20から押さえ部品13を介して冷却フィン10へと伝導することができるため、パワーモジュールの熱抵抗が低減することで、パワーモジュールを長寿命化できるという効果もある。
本実施例では、押さえ部品13は放熱基板20の外周部全てに設置した構造としたが、必ずしも外周部全てを押さえる必要は無く、樹脂ケース6にかかる応力が大きくなるネジ締め箇所近傍のみに設置してもよい。この場合には押さえ部品13のサイズを小さくすることができ、コスト面で有利となる。
本実施の形態2においては、実施の形態1で用いた押さえ手段である押さえ部品13をブッシュ11に置き換えた点が異なる。このようにブッシュ11を用いても、ブッシュ11が放熱基板20に形成された傾斜部を押さえるので、樹脂ケース6の曲げ変位を抑制でき、充填樹脂9での発生応力も低減できるので充填樹脂9のクラックの発生を防止することが可能となる。
本実施の形態3においては、実施の形態1で用いた押さえ手段である押さえ部品13を樹脂ケース6の放熱基板20の傾斜部に対向する位置に形成した傾斜部に置き換えた点が異なる。このような構造とすることで、樹脂ケース6は押さえ手段を備えた一体構造となる。このような樹脂ケース6に設けた傾斜部を用いても、樹脂ケース6に設けた傾斜部が放熱基板20に形成された傾斜部を押さえることで、樹脂ケース6の曲げ変位を抑制でき、充填樹脂9での発生応力も低減できるので充填樹脂9のクラックの発生を防止することが可能となる。
本実施の形態4においては、実施の形態1で用いた押さえ手段である押さえ部品13を樹脂ケース6に設けられたバネ14に置き換えた点が異なる。このようなバネ14を用いても、バネ14が放熱基板20に形成された傾斜部を押さえることで、樹脂ケース6の曲げ変位を抑制でき、充填樹脂9での発生応力も低減できるので充填樹脂9のクラックの発生を防止することが可能となる。
2 絶縁層
3 金属パターン
4 パワー半導体素子
5 接着材
6 樹脂ケース
7 端子
8 アルミ線
9 充填樹脂
10 冷却フィン
11 ブッシュ
12 ネジ
13 押さえ部品
14 バネ
15 通し穴
16 ネジ穴
20 放熱基板
21 傾斜部を有するブッシュ
100,200,300,400 パワーモジュール
Claims (8)
- 一方の面にパワー半導体素子が搭載され、端部に傾斜部を有する放熱基板と、
前記パワー半導体素子を取り囲み、前記放熱基板の前記一方の面と接する樹脂ケースと、
前記放熱基板の他方の面と接する冷却フィンと、
前記放熱基板の前記傾斜部と接し、前記放熱基板を前記冷却フィンに押さえ付ける押さえ手段と、
を備えたことを特徴とするパワーモジュール。 - 前記押さえ手段は、傾斜部を有する金属部材であることを特徴とする請求項1記載のパワーモジュール。
- 前記押さえ手段は、前記樹脂ケースの外周部に設けられた貫通穴に配置されたブッシュであることを特徴とする請求項1記載のパワーモジュール。
- 前記ブッシュは、前記放熱基板の前記傾斜部と接する部分に傾斜部を有することを特徴とする請求項3記載のパワーモジュール。
- 前記押さえ手段は、前記放熱基板の前記傾斜部と対向する位置に傾斜部が設けられた前記樹脂ケースであることを特徴とする請求項1記載のパワーモジュール。
- 前記押さえ手段は、前記樹脂ケースに接続された金属バネであることを特徴とする請求項1記載のパワーモジュール。
- 前記放熱基板の前記傾斜部は、前記放熱基板の前記一方の面側に形成されたことを特徴とする請求項1〜6のいずれか1項に記載のパワーモジュール。
- 前記放熱基板の前記傾斜部は、前記放熱基板の外周部へ向かって低くなることを特徴とする請求項7に記載のパワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014549756A JP5881860B2 (ja) | 2012-11-28 | 2013-05-20 | パワーモジュール |
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JP2012260002 | 2012-11-28 | ||
JP2012260002 | 2012-11-28 | ||
JP2014549756A JP5881860B2 (ja) | 2012-11-28 | 2013-05-20 | パワーモジュール |
PCT/JP2013/003182 WO2014083717A1 (ja) | 2012-11-28 | 2013-05-20 | パワーモジュール |
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JP5881860B2 JP5881860B2 (ja) | 2016-03-09 |
JPWO2014083717A1 true JPWO2014083717A1 (ja) | 2017-01-05 |
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JP2014549756A Active JP5881860B2 (ja) | 2012-11-28 | 2013-05-20 | パワーモジュール |
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US (1) | US9521737B2 (ja) |
JP (1) | JP5881860B2 (ja) |
CN (1) | CN104838493B (ja) |
DE (1) | DE112013005676B4 (ja) |
WO (1) | WO2014083717A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9646912B2 (en) * | 2013-09-10 | 2017-05-09 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor module having cooling fins |
DE112014005415B4 (de) * | 2013-11-26 | 2020-01-23 | Mitsubishi Electric Corporation | Leistungsmodul und Verfahren zum Herstellen eines Leistungsmoduls |
JP5996126B2 (ja) * | 2013-12-05 | 2016-09-21 | 三菱電機株式会社 | 電力半導体装置 |
JP6323325B2 (ja) * | 2014-04-21 | 2018-05-16 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
CN106537589B (zh) * | 2014-07-09 | 2019-09-24 | 三菱电机株式会社 | 半导体装置 |
US20160149380A1 (en) * | 2014-11-20 | 2016-05-26 | Hamilton Sundstrand Corporation | Power control assembly with vertically mounted power devices |
JP6589631B2 (ja) * | 2015-12-25 | 2019-10-16 | 富士電機株式会社 | 半導体装置 |
JP6946698B2 (ja) * | 2017-03-31 | 2021-10-06 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Publication number | Publication date |
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