JP2010186953A - 電力用半導体装置とその製造方法 - Google Patents
電力用半導体装置とその製造方法 Download PDFInfo
- Publication number
- JP2010186953A JP2010186953A JP2009031529A JP2009031529A JP2010186953A JP 2010186953 A JP2010186953 A JP 2010186953A JP 2009031529 A JP2009031529 A JP 2009031529A JP 2009031529 A JP2009031529 A JP 2009031529A JP 2010186953 A JP2010186953 A JP 2010186953A
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical electrode
- semiconductor device
- mold
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 60
- 239000011347 resin Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims description 25
- 238000005476 soldering Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 230000000694 effects Effects 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000001721 transfer moulding Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4905—Shape
- H01L2224/49051—Connectors having different shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
【解決手段】表面に回路パターンを有する基板21と、該回路パターンに固着された半導体素子22、24と、一端に開放面を有し、他端にて該回路パターンに固着され該基板に対して直立し、一部に他の部分よりも内径が大きく形成された部分を有する筒状電極と、該基板と該半導体素子と該筒状電極12を、該基板の裏面および該筒状電極の一端が外部に露出するように覆う樹脂筐体10とを備える。
【選択図】図2
Description
本実施形態は図1〜9を参照して説明する。なお、同一材料または同一、対応する構成要素には同一の符号を付して複数回の説明を省略する場合がある。他の実施形態についても同様である。
本実施形態は図10を参照して説明する。図10は本実施形態の電力用半導体装置の断面図である。本実施形態は実施形態1と筒状電極の構成が異なる。本実施形態の筒状電極60は回路パターン20と接続される部分(他端)において端部に向かうほど内径が大きくなる形状である。筒状電極60の他端と回路パターン20ははんだ付けにより接合される。なお、筒状電極60は樹脂筐体10から露出すべき一端においては実施形態1と同様であり「他の部分より内径の大きい」部分を有する。
本実施形態は図11を参照して説明する。図11は本実施形態の電力用半導体装置の断面図である。本実施形態は実施形態1と筒状電極の構成が異なる。本実施形態の筒状電極62は樹脂筐体10の外部へ露出すべき一端が湾曲させられている。つまり、筒状電極62の一端は端部が折り返された折り返し部分を備え、当該折り返し部分が樹脂筐体10の表面に露出する。そして当該折り返し部分の端部は樹脂筐体10内に埋め込まれている。さらに、筒状電極62は他端においても前述の折り返し部を備える。
本実施形態は図12、13を参照して説明する。図12は本実施形態の電力用半導体装置の断面図であり、図13は図12の一部拡大図であって、図12の構成にピン電極72が圧入された状態を表す。本実施形態は実施形態1と筒状電極の構成が異なり、特にピン電極を筒状電極に圧入する電力用半導体装置に好適な構成を提供するものである。
Claims (7)
- 表面に回路パターンを有する基板と、
前記回路パターンに固着された半導体素子と、
一端に開放面を有し、他端にて前記回路パターンに固着されて前記基板に対して直立し、一部に他の部分よりも内径が大きく形成された部分を有する筒状電極と、
前記基板と前記半導体素子と前記筒状電極を、前記基板の裏面および前記筒状電極の一端が外部に露出するように覆う樹脂筐体とを備えたことを特徴とする電力用半導体装置。 - 前記筒状電極の一端は端部に向かうほど内径が大きくなることを特徴とする請求項1に記載の電力用半導体装置。
- 前記筒状電極の内径が大きく形成された部分は、前記筒状電極の一端に配され、かつ、他の部分より外径と内径の差が小さいことを特徴とする請求項1に記載の電力用半導体装置。
- 前記筒状電極の他端は端部に向かうほど内径が大きくなる形状であり、
前記筒状電極の他端は前記基板とはんだ付けにより接合されたことを特徴とする請求項1に記載の電力用半導体装置。 - 前記筒状電極の一端はその端部が前記基板の方向を向くように湾曲させられた形状であることを特徴とする請求項1に記載の電力用半導体装置。
- 前記筒状電極は絞り加工により形成された内壁部と外壁部が所定間隔離間する二重構造を有し、
前記筒状電極の一端は前記絞り加工による折り返し部分であり、
前記筒状電極の他端は前記折り返し部分と反対の部分の前記外壁部であることを特徴とする請求項1に記載の電力用半導体装置。 - 一端に他の部分より内径の大きい部分および開放面を有する筒状電極の他端を基板の表面に固着し、前記筒状電極を前記基板に対して直立させ、樹脂封止されるべきインサート物を製作する工程と、
前記インサート物を、金型が前記基板の裏面と前記筒状電極の一端を挟むように前記金型内部に配置する工程と、
前記筒状電極の一端にたわみを持たせるように前記金型の型締めを行う工程と、
前記型締めを維持して前記金型内部にモールド樹脂を注入する工程とを備えることを特徴とする電力用半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009031529A JP5262793B2 (ja) | 2009-02-13 | 2009-02-13 | 電力用半導体装置とその製造方法 |
DE102009042399.0A DE102009042399B4 (de) | 2009-02-13 | 2009-09-22 | Leistungshalbleitervorrichtung und Herstellungsverfahren dafür |
DE102009061178.9A DE102009061178B3 (de) | 2009-02-13 | 2009-09-22 | Leistungshalbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009031529A JP5262793B2 (ja) | 2009-02-13 | 2009-02-13 | 電力用半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010186953A true JP2010186953A (ja) | 2010-08-26 |
JP5262793B2 JP5262793B2 (ja) | 2013-08-14 |
Family
ID=42733331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009031529A Active JP5262793B2 (ja) | 2009-02-13 | 2009-02-13 | 電力用半導体装置とその製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5262793B2 (ja) |
DE (2) | DE102009042399B4 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014030254A1 (ja) * | 2012-08-24 | 2014-02-27 | 三菱電機株式会社 | 半導体装置 |
US8987912B2 (en) | 2010-04-28 | 2015-03-24 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
CN105027279A (zh) * | 2013-03-21 | 2015-11-04 | 富士电机株式会社 | 接触部件以及半导体模块 |
US9204559B2 (en) | 2013-03-22 | 2015-12-01 | Fuji Electric Co., Ltd. | Manufacturing method of semiconductor device and mounting jig |
DE102015210603A1 (de) | 2014-06-27 | 2015-12-31 | Mitsubishi Electric Corporation | Verfahren zur Herstellung einer Halbleitervorrichtung |
US10405434B2 (en) | 2013-03-22 | 2019-09-03 | Fuji Electric Co., Ltd. | Mounting jig for semiconductor device |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2779377B1 (en) * | 2011-11-09 | 2018-04-18 | Mitsubishi Electric Corporation | Rotating electrical machine |
CN103367299B (zh) * | 2013-07-03 | 2017-02-15 | 株洲南车时代电气股份有限公司 | 半导体模块功率互联装置及其方法 |
DE102014211698A1 (de) * | 2014-06-18 | 2015-12-24 | Robert Bosch Gmbh | Elektronisches Modul mit einer Kontakthülse |
DE102018111989A1 (de) | 2018-05-18 | 2019-11-21 | Rogers Germany Gmbh | Elektronikmodul und Verfahren zur Herstellung desselben |
DE102018133479A1 (de) | 2018-12-21 | 2020-06-25 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Elektronikmoduls und Elektronikmodul |
DE102021121797A1 (de) | 2021-08-23 | 2023-02-23 | Infineon Technologies Ag | Leistungshalbleitermodul mit buchse oder einpresspin und verfahren zu seiner herstellung |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008090734A1 (ja) * | 2007-01-22 | 2008-07-31 | Mitsubishi Electric Corporation | 電力用半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3491481B2 (ja) * | 1996-08-20 | 2004-01-26 | 株式会社日立製作所 | 半導体装置とその製造方法 |
JP4569473B2 (ja) * | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | 樹脂封止型パワー半導体モジュール |
JP2007235004A (ja) * | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | 半導体装置 |
US7701054B2 (en) * | 2007-02-12 | 2010-04-20 | Infineon Technologies Ag | Power semiconductor module and method for its manufacture |
DE102008029829B4 (de) * | 2008-06-25 | 2012-10-11 | Danfoss Silicon Power Gmbh | Vertikal nach oben kontaktierender Halbleiter und Verfahren zu dessen Herstellung |
JP4567773B2 (ja) * | 2008-07-18 | 2010-10-20 | 三菱電機株式会社 | 電力用半導体装置 |
TWI394258B (zh) * | 2008-11-11 | 2013-04-21 | Cyntec Co Ltd | 晶片封裝結構及其製作方法 |
-
2009
- 2009-02-13 JP JP2009031529A patent/JP5262793B2/ja active Active
- 2009-09-22 DE DE102009042399.0A patent/DE102009042399B4/de active Active
- 2009-09-22 DE DE102009061178.9A patent/DE102009061178B3/de active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008090734A1 (ja) * | 2007-01-22 | 2008-07-31 | Mitsubishi Electric Corporation | 電力用半導体装置 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987912B2 (en) | 2010-04-28 | 2015-03-24 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
US9622368B2 (en) | 2012-08-24 | 2017-04-11 | Mitsubishi Electric Corporation | Semiconductor device |
KR20150036347A (ko) * | 2012-08-24 | 2015-04-07 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 |
WO2014030254A1 (ja) * | 2012-08-24 | 2014-02-27 | 三菱電機株式会社 | 半導体装置 |
JP5854147B2 (ja) * | 2012-08-24 | 2016-02-09 | 三菱電機株式会社 | 半導体装置 |
KR101642754B1 (ko) | 2012-08-24 | 2016-07-26 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 |
CN104584213B (zh) * | 2012-08-24 | 2018-02-13 | 三菱电机株式会社 | 半导体装置 |
CN105027279A (zh) * | 2013-03-21 | 2015-11-04 | 富士电机株式会社 | 接触部件以及半导体模块 |
CN105027279B (zh) * | 2013-03-21 | 2018-02-13 | 富士电机株式会社 | 接触部件以及半导体模块 |
US9406633B2 (en) | 2013-03-21 | 2016-08-02 | Fuji Electric Co., Ltd. | Contact component and semiconductor module |
JP6041043B2 (ja) * | 2013-03-21 | 2016-12-07 | 富士電機株式会社 | コンタクト部品、および半導体モジュール |
US9204559B2 (en) | 2013-03-22 | 2015-12-01 | Fuji Electric Co., Ltd. | Manufacturing method of semiconductor device and mounting jig |
US9877397B2 (en) | 2013-03-22 | 2018-01-23 | Fuji Electric Co., Ltd. | Mounting jig for semiconductor device |
US10405434B2 (en) | 2013-03-22 | 2019-09-03 | Fuji Electric Co., Ltd. | Mounting jig for semiconductor device |
US9437460B2 (en) | 2014-06-27 | 2016-09-06 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
DE102015210603A1 (de) | 2014-06-27 | 2015-12-31 | Mitsubishi Electric Corporation | Verfahren zur Herstellung einer Halbleitervorrichtung |
DE102015210603B4 (de) | 2014-06-27 | 2019-05-23 | Mitsubishi Electric Corporation | Verfahren zur Herstellung einer Halbleitervorrichtung |
Also Published As
Publication number | Publication date |
---|---|
DE102009061178B3 (de) | 2015-08-20 |
JP5262793B2 (ja) | 2013-08-14 |
DE102009042399B4 (de) | 2015-08-20 |
DE102009042399A1 (de) | 2010-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5262793B2 (ja) | 電力用半導体装置とその製造方法 | |
US9887142B2 (en) | Power semiconductor device | |
KR101186781B1 (ko) | 전력 반도체 회로 장치 및 그 제조 방법 | |
JP5071405B2 (ja) | 電力用半導体装置 | |
JP5272768B2 (ja) | 電力用半導体装置とその製造方法 | |
JP5012772B2 (ja) | 半導体装置の製造方法および半導体装置 | |
JP5098440B2 (ja) | 電力半導体装置の製造方法 | |
JP5218442B2 (ja) | 電力用半導体装置 | |
JP5069758B2 (ja) | 半導体装置 | |
JP2006066813A (ja) | 半導体装置 | |
JP4967701B2 (ja) | 電力半導体装置 | |
JP2010199494A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2012134300A (ja) | 半導体装置 | |
US10366933B2 (en) | Case having terminal insertion portion for an external connection terminal | |
JP2012238684A (ja) | 電力用半導体装置 | |
JP2018117071A (ja) | 半導体装置およびその製造方法 | |
JP2011187819A (ja) | 樹脂封止型パワーモジュールおよびその製造方法 | |
JP5972158B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2017028131A (ja) | パッケージ実装体 | |
JP6872953B2 (ja) | 発熱部品の固定構造および発熱部品の固定方法 | |
JP2007318017A (ja) | 光結合半導体装置および電子機器 | |
KR20160051513A (ko) | 전력 모듈 및 그 제조 방법 | |
JP2015012158A (ja) | 電子装置およびその電子装置の製造方法 | |
JP2010021231A (ja) | モールドパッケージ | |
JP2018156983A (ja) | 配線部材およびこれを用いた半導体装置並びに当該半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110603 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130415 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5262793 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |