JPWO2014010745A1 - 太陽電池素子及びその製造方法 - Google Patents

太陽電池素子及びその製造方法 Download PDF

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Publication number
JPWO2014010745A1
JPWO2014010745A1 JP2014524903A JP2014524903A JPWO2014010745A1 JP WO2014010745 A1 JPWO2014010745 A1 JP WO2014010745A1 JP 2014524903 A JP2014524903 A JP 2014524903A JP 2014524903 A JP2014524903 A JP 2014524903A JP WO2014010745 A1 JPWO2014010745 A1 JP WO2014010745A1
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JP
Japan
Prior art keywords
passivation layer
solar cell
semiconductor substrate
forming
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014524903A
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English (en)
Japanese (ja)
Inventor
明博 織田
明博 織田
吉田　誠人
誠人 吉田
野尻　剛
剛 野尻
倉田　靖
靖 倉田
田中　徹
徹 田中
修一郎 足立
修一郎 足立
剛 早坂
剛 早坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2014010745A1 publication Critical patent/JPWO2014010745A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2014524903A 2012-07-12 2013-07-12 太陽電池素子及びその製造方法 Pending JPWO2014010745A1 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2012156472 2012-07-12
JP2012156472 2012-07-12
JP2012218468 2012-09-28
JP2012218468 2012-09-28
JP2012218388 2012-09-28
JP2012218388 2012-09-28
JP2013007904 2013-01-18
JP2013007904 2013-01-18
PCT/JP2013/069224 WO2014010745A1 (ja) 2012-07-12 2013-07-12 太陽電池素子及びその製造方法

Publications (1)

Publication Number Publication Date
JPWO2014010745A1 true JPWO2014010745A1 (ja) 2016-06-23

Family

ID=49916183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014524903A Pending JPWO2014010745A1 (ja) 2012-07-12 2013-07-12 太陽電池素子及びその製造方法

Country Status (4)

Country Link
JP (1) JPWO2014010745A1 (zh)
CN (1) CN104428901B (zh)
TW (1) TWI589012B (zh)
WO (1) WO2014010745A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630997B2 (ja) * 2014-09-05 2020-01-15 日立化成株式会社 パッシベーション層保護層形成用組成物、太陽電池素子及びその製造方法並びに太陽電池
JP6676318B2 (ja) * 2014-09-18 2020-04-08 昭和電工株式会社 薄膜印刷用絶縁性樹脂組成物及び薄膜パターンの製造方法
WO2017099020A1 (ja) * 2015-12-07 2017-06-15 東レ株式会社 半導体素子の製造方法および太陽電池の製造方法
CN109673170B (zh) * 2016-07-28 2022-06-10 京瓷株式会社 太阳能电池元件
CN108389917B (zh) * 2018-02-02 2020-01-24 安徽秦能光电有限公司 一种n型硅基太阳能电池及其制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044375A (ja) * 1999-07-29 2001-02-16 Fujitsu Ltd 半導体装置およびその製造方法
JP2010040741A (ja) * 2008-08-05 2010-02-18 Konica Minolta Holdings Inc 電子デバイス用の絶縁膜形成方法、電子デバイスの製造方法、薄膜トランジスタの製造方法、絶縁膜、電子デバイス及び薄膜トランジスタ
JP2010109201A (ja) * 2008-10-31 2010-05-13 Sharp Corp 太陽電池の製造方法
JP2010114413A (ja) * 2008-10-08 2010-05-20 Sony Corp 薄膜トランジスタおよび表示装置
JP2010232229A (ja) * 2009-03-25 2010-10-14 Toshiba Corp 不揮発性記憶装置及びその製造方法
WO2011033826A1 (ja) * 2009-09-18 2011-03-24 信越化学工業株式会社 太陽電池、その製造方法及び太陽電池モジュール
JP2011096701A (ja) * 2009-10-27 2011-05-12 Kaneka Corp 結晶シリコン系太陽電池
JP2011216845A (ja) * 2010-03-18 2011-10-27 Ricoh Co Ltd 絶縁膜形成用インク、絶縁膜の製造方法及び半導体装置の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200746123A (en) * 2006-01-11 2007-12-16 Pentax Corp Optical element having anti-reflection coating
EP2290704A1 (en) * 2009-08-27 2011-03-02 Applied Materials, Inc. Passivation layer for wafer based solar cells and method of manufacturing thereof
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
NL2004066C2 (en) * 2010-01-06 2011-07-07 Stichting Energie Solar cell and method for manufacturing of such a solar cell.
CN102569522A (zh) * 2012-02-09 2012-07-11 常州大学 一种高效晶体硅太阳电池局部背接触结构的制备方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044375A (ja) * 1999-07-29 2001-02-16 Fujitsu Ltd 半導体装置およびその製造方法
JP2010040741A (ja) * 2008-08-05 2010-02-18 Konica Minolta Holdings Inc 電子デバイス用の絶縁膜形成方法、電子デバイスの製造方法、薄膜トランジスタの製造方法、絶縁膜、電子デバイス及び薄膜トランジスタ
JP2010114413A (ja) * 2008-10-08 2010-05-20 Sony Corp 薄膜トランジスタおよび表示装置
JP2010109201A (ja) * 2008-10-31 2010-05-13 Sharp Corp 太陽電池の製造方法
JP2010232229A (ja) * 2009-03-25 2010-10-14 Toshiba Corp 不揮発性記憶装置及びその製造方法
WO2011033826A1 (ja) * 2009-09-18 2011-03-24 信越化学工業株式会社 太陽電池、その製造方法及び太陽電池モジュール
JP2011096701A (ja) * 2009-10-27 2011-05-12 Kaneka Corp 結晶シリコン系太陽電池
JP2011216845A (ja) * 2010-03-18 2011-10-27 Ricoh Co Ltd 絶縁膜形成用インク、絶縁膜の製造方法及び半導体装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
G. DINGEMANS ET AL.: "Status and prospects of A1203-based surface passivation schemes for silicon solar cells", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, vol. 30, no. 4, JPN7017000455, 6 July 2012 (2012-07-06), pages 040802 - 1, ISSN: 0003499811 *

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CN104428901A (zh) 2015-03-18
CN104428901B (zh) 2017-11-03
WO2014010745A1 (ja) 2014-01-16
TW201409729A (zh) 2014-03-01
TWI589012B (zh) 2017-06-21

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