JPWO2012141145A1 - 基板のエッジ研磨用組成物及びそれを用いた基板のエッジ研磨方法 - Google Patents
基板のエッジ研磨用組成物及びそれを用いた基板のエッジ研磨方法 Download PDFInfo
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- JPWO2012141145A1 JPWO2012141145A1 JP2013509906A JP2013509906A JPWO2012141145A1 JP WO2012141145 A1 JPWO2012141145 A1 JP WO2012141145A1 JP 2013509906 A JP2013509906 A JP 2013509906A JP 2013509906 A JP2013509906 A JP 2013509906A JP WO2012141145 A1 JPWO2012141145 A1 JP WO2012141145A1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本明細書中、「合成水溶性高分子」とは、セルロース誘導体やデンプンなどの天然由来の水溶性高分子ではないことを意味する。天然由来の水溶性高分子は構造や分子量が原料に左右されるため、所望とする構造及び分子量のものを得にくい。それと比べて、合成水溶性高分子は構造及び分子量のコントロールが容易である。
エッジ研磨用組成物中に含まれる塩基性化合物は、基板のエッジをエッチングする作用を有し、半導体基板を化学的に研磨する。
エッジ研磨用組成物中に含まれる水は、エッジ研磨用組成物中の他の成分を溶解または分散させる働きをする。水は、他の成分の作用を阻害する不純物をできるだけ含有しないことが好ましい。具体的には、イオン交換樹脂を使って不純物イオンを除去した後にフィルタを通して異物を除去したイオン交換水、あるいは純水、超純水又は蒸留水が好ましい。
エッジ研磨用組成物は砥粒をさらに含有してもよい。砥粒は、基板のエッジを機械的に研磨する働きをする。
エッジ研磨用組成物は、キレート剤をさらに含有してもよい。キレート剤を含有する場合、エッジ研磨用組成物による基板の金属汚染を抑えることができる。
エッジ研磨用組成物は、濡れ剤をさらに含有してもよい。濡れ剤は、基板のエッジや表面の親水性(濡れ性)を高める作用を有する。基板のエッジや表面の親水性が低い場合、研磨用組成物中の成分、特に塩基性化合物が基板のエッジや表面に対して不均一に作用し、その結果、基板のエッジや表面に荒れが生じる場合がある。また、基板のエッジや表面の親水性が低い場合、エッジ研磨後の基板上にエッジ研磨用組成物が残留しやすく、洗浄性が悪くなる場合がある。
Claims (15)
- 側鎖又は末端に複素環を有する合成水溶性高分子を0.0001質量%以上と、
塩基性化合物と、
水と
を含有するエッジ研磨用組成物。 - 前記合成水溶性高分子は、ポリオキシエチレン換算で1,000以上の重量平均分子量を有する、請求項1に記載のエッジ研磨用組成物。
- 前記複素環はラクタム環又はテトラヒドロフラン環である、請求項1又は2に記載のエッジ研磨用組成物。
- 前記合成水溶性高分子は、ポリビニルピロリドン、ポリビニルカプロラクタム、モノラウリン酸ポリオキシエチレンソルビタン、及びトリオレイン酸ポリオキシエチレンソルビタンから選ばれる少なくとも一種である、請求項1〜3のいずれか一項に記載のエッジ研磨用組成物。
- さらに砥粒を含む請求項1〜4のいずれか一項に記載のエッジ研磨用組成物。
- さらにキレート剤を含む請求項1〜5のいずれか一項に記載のエッジ研磨用組成物。
- さらに濡れ剤を含む請求項1〜6のいずれか一項に記載のエッジ研磨用組成物。
- 前記エッジ研磨用組成物は少なくとも第1剤と第2剤を混合することにより調製され、前記第1剤は、前記合成水溶性高分子及び前記塩基性化合物のうちの一方と水とを少なくとも含有し、前記第2剤は、前記合成水溶性高分子及び前記塩基性化合物のうちの他方と水とを少なくとも含有する、請求項1〜7のいずれか一項に記載のエッジ用研磨用組成物。
- 前記エッジ研磨用組成物は、前記合成水溶性高分子及び前記塩基性化合物を少なくとも含有したエッジ研磨用組成物原液を水希釈することにより調製される、請求項1〜7のいずれか一項に記載のエッジ研磨用組成物。
- 請求項1〜7のいずれか一項に記載のエッジ研磨用組成物の調製方法であって、
前記合成水溶性高分子及び前記塩基性化合物のうちの一方と水とを少なくとも含有する第1剤と、前記合成水溶性高分子及び前記塩基性化合物のうちの他方と水とを少なくとも含有する第2剤とを混合する工程を含む、エッジ研磨用組成物の調製方法。 - 請求項1〜7のいずれか一項に記載のエッジ研磨用組成物を調製するために互いに混合して使用される第1剤と第2剤の組み合わせであって、前記第1剤は、前記合成水溶性高分子及び前記塩基性化合物のうちの一方と水とを少なくとも含有し、前記第2剤は、前記合成水溶性高分子及び前記塩基性化合物のうちの他方と水とを少なくとも含有する、第1剤と第2剤の組み合わせ。
- 請求項1〜7のいずれか一項に記載のエッジ研磨用組成物の調製方法であって、
前記合成水溶性高分子及び前記塩基性化合物を少なくとも含有したエッジ研磨用組成物原液を水希釈する工程を含む、エッジ研磨用組成物の調製方法。 - 側鎖又は末端に複素環を有する合成水溶性高分子と、塩基性化合物とを少なくとも含有し、水希釈により請求項1〜7のいずれか一項に記載のエッジ研磨用組成物を調製するために用いられるエッジ研磨用組成物原液。
- 請求項1〜9のいずれか一項に記載のエッジ研磨用組成物を用いて基板のエッジを研磨する方法。
- 請求項14に記載の方法を用いて基板のエッジを研磨する工程を含む、基板の製造方法。
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US8795548B1 (en) * | 2013-04-11 | 2014-08-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Silicon wafer polishing composition and related methods |
US9150759B2 (en) * | 2013-09-27 | 2015-10-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing composition for polishing silicon wafers and related methods |
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JP2010283184A (ja) * | 2009-06-05 | 2010-12-16 | Fa Service Corp | 再生半導体ウエハの製造方法 |
WO2011004793A1 (ja) * | 2009-07-07 | 2011-01-13 | 花王株式会社 | シリコンウエハ用研磨液組成物 |
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