JPWO2010147053A1 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
- Publication number
- JPWO2010147053A1 JPWO2010147053A1 JP2011519748A JP2011519748A JPWO2010147053A1 JP WO2010147053 A1 JPWO2010147053 A1 JP WO2010147053A1 JP 2011519748 A JP2011519748 A JP 2011519748A JP 2011519748 A JP2011519748 A JP 2011519748A JP WO2010147053 A1 JPWO2010147053 A1 JP WO2010147053A1
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- gear member
- gear
- members
- internal gear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 230000007246 mechanism Effects 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
- チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの外周部周方向に回転可能に設けられた複数の外歯車部材と、該外歯車部材に噛合する内歯車を備えたリング状の固定内歯車部材とを備えた自公転機構を有する気相成長装置において、前記サセプタ及び前記内歯車部材の少なくともいずれか一方を、前記外歯車部材と前記内歯車部材とが互いに噛み合う噛み合い状態の位置と両歯車部材が回転軸線方向に離間した非噛み合い状態の位置とに、回転軸線方向に移動可能に形成するとともに、両歯車部材の少なくともいずれか一方の歯車部材の歯側面に、両歯車部材が前記非噛み合い状態の位置から前記噛み合い状態の位置へと移動したときに、他方の歯車部材の歯側面に当接して両歯車部材を前記噛み合い状態にガイドするためのガイド斜面を設けた気相成長装置。
- チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの外周部周方向に回転可能に設けられた複数の外歯車部材と、該外歯車部材に噛合する内歯車を備えたリング状の固定内歯車部材とを備えた自公転機構を有する気相成長装置において、前記サセプタを支持して回転させる軸部材の上面とサセプタの中央部下面との間に上下一対のサセプタ高さ調節部材が対向して設けられ、該サセプタ高さ調節部材は、各サセプタ高さ調節部材の対向面の周方向に、対向するサセプタ高さ調節部材に向かって突出する突出部と該突出部の間に形成される凹部とを交互に複数組形成し、前記一対のサセプタ高さ調節部材の突出部先端面同士を当接させたときに前記サセプタを成膜時より高い位置に支持して前記外歯車部材と前記内歯車部材とが僅かに噛み合った状態とし、前記一対のサセプタ高さ調節部材の突出部を前記凹部内に位置させたときに前記サセプタを成膜時の位置に支持して前記外歯車部材と前記内歯車部材とが所定の噛み合い状態となる気相成長装置。
- チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの外周部周方向に回転可能に設けられた複数の外歯車部材と、該外歯車部材に噛合する内歯車を備えたリング状の固定内歯車部材とを備えた自公転機構を有する気相成長装置において、前記サセプタ及び前記内歯車部材の少なくともいずれか一方を、前記外歯車部材と前記内歯車部材とが互いに噛み合う噛み合い状態の位置と両歯車部材が回転軸線方向に離間した非噛み合い状態の位置とに、回転軸線方向に移動可能に形成するとともに、両歯車部材の少なくともいずれか一方の歯車部材の歯側面に、両歯車部材が前記非噛み合い状態の位置から前記噛み合い状態の位置へと移動したときに、他方の歯車部材の歯側面に当接して両歯車部材を前記噛み合い状態にガイドするためのガイド斜面を設け、前記サセプタを支持して回転させる軸部材の上面とサセプタの中央部下面との間に上下一対のサセプタ高さ調節部材が対向して設けられ、該サセプタ高さ調節部材は、各サセプタ高さ調節部材の対向面の周方向に、対向するサセプタ高さ調節部材に向かって突出する突出部と該突出部の間に形成される凹部とを交互に複数組形成し、前記一対のサセプタ高さ調節部材の突出部先端面同士を当接させたときに前記サセプタを成膜時より高い位置に支持して前記外歯車部材と前記内歯車部材とが前記ガイド斜面で噛み合った状態とし、前記一対のサセプタ高さ調節部材の突出部を前記凹部内に位置させたときに前記サセプタを成膜時の位置に支持して前記外歯車部材と前記内歯車部材とが所定の噛み合い状態となる気相成長装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011519748A JP5613159B2 (ja) | 2009-06-19 | 2010-06-11 | 気相成長装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009146740 | 2009-06-19 | ||
JP2009146740 | 2009-06-19 | ||
PCT/JP2010/059906 WO2010147053A1 (ja) | 2009-06-19 | 2010-06-11 | 気相成長装置 |
JP2011519748A JP5613159B2 (ja) | 2009-06-19 | 2010-06-11 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010147053A1 true JPWO2010147053A1 (ja) | 2012-12-06 |
JP5613159B2 JP5613159B2 (ja) | 2014-10-22 |
Family
ID=43356371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519748A Active JP5613159B2 (ja) | 2009-06-19 | 2010-06-11 | 気相成長装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20120103265A1 (ja) |
JP (1) | JP5613159B2 (ja) |
KR (1) | KR101650839B1 (ja) |
CN (1) | CN102804339B (ja) |
TW (1) | TWI527089B (ja) |
WO (1) | WO2010147053A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012162752A (ja) * | 2011-02-03 | 2012-08-30 | Taiyo Nippon Sanso Corp | 気相成長装置 |
US9816184B2 (en) | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
CN103834926A (zh) * | 2012-11-22 | 2014-06-04 | 上海法德机械设备有限公司 | 真空镀膜工件转台 |
US20160115623A1 (en) * | 2013-06-06 | 2016-04-28 | Ibiden Co., Ltd. | Wafer carrier and epitaxial growth device using same |
JP2015056635A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 気相成長装置及び気相成長方法 |
JP6411231B2 (ja) * | 2015-01-26 | 2018-10-24 | 大陽日酸株式会社 | 気相成長装置 |
DE202018100363U1 (de) | 2018-01-23 | 2019-04-24 | Aixtron Se | Vorrichtung zum Verbinden eines Suszeptors mit einer Antriebswelle |
DE102018126862A1 (de) * | 2018-10-26 | 2020-04-30 | Oerlikon Surface Solutions Ag, Pfäffikon | Werkstückträgereinrichtung und Beschichtungsanordnung |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0630552U (ja) * | 1992-09-22 | 1994-04-22 | カルソニック株式会社 | 歯車装置 |
JPH10219447A (ja) * | 1997-02-12 | 1998-08-18 | Fujitsu Ltd | 気相成長装置 |
JP2003065402A (ja) * | 2001-08-28 | 2003-03-05 | Sumitomo Heavy Ind Ltd | 単純遊星歯車構造 |
JP2004525056A (ja) * | 2001-02-07 | 2004-08-19 | エムコア・コーポレイション | 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法 |
JP2007266121A (ja) * | 2006-03-27 | 2007-10-11 | Hitachi Cable Ltd | 気相成長装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068441A (en) * | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
JP4537566B2 (ja) * | 2000-12-07 | 2010-09-01 | 大陽日酸株式会社 | 基板回転機構を備えた成膜装置 |
US6592675B2 (en) * | 2001-08-09 | 2003-07-15 | Moore Epitaxial, Inc. | Rotating susceptor |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
JP4470680B2 (ja) * | 2004-10-12 | 2010-06-02 | 日立電線株式会社 | 気相成長装置 |
JP2007042899A (ja) * | 2005-08-03 | 2007-02-15 | Hitachi Cable Ltd | 気相成長装置 |
JP2007243060A (ja) * | 2006-03-10 | 2007-09-20 | Taiyo Nippon Sanso Corp | 気相成長装置 |
-
2010
- 2010-06-11 WO PCT/JP2010/059906 patent/WO2010147053A1/ja active Application Filing
- 2010-06-11 KR KR1020127000943A patent/KR101650839B1/ko active IP Right Grant
- 2010-06-11 CN CN201080027286.2A patent/CN102804339B/zh active Active
- 2010-06-11 JP JP2011519748A patent/JP5613159B2/ja active Active
- 2010-06-11 US US13/379,077 patent/US20120103265A1/en not_active Abandoned
- 2010-06-18 TW TW099119845A patent/TWI527089B/zh active
-
2016
- 2016-01-05 US US14/988,351 patent/US9765427B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0630552U (ja) * | 1992-09-22 | 1994-04-22 | カルソニック株式会社 | 歯車装置 |
JPH10219447A (ja) * | 1997-02-12 | 1998-08-18 | Fujitsu Ltd | 気相成長装置 |
JP2004525056A (ja) * | 2001-02-07 | 2004-08-19 | エムコア・コーポレイション | 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法 |
JP2003065402A (ja) * | 2001-08-28 | 2003-03-05 | Sumitomo Heavy Ind Ltd | 単純遊星歯車構造 |
JP2007266121A (ja) * | 2006-03-27 | 2007-10-11 | Hitachi Cable Ltd | 気相成長装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20120034101A (ko) | 2012-04-09 |
US20160130695A1 (en) | 2016-05-12 |
US20120103265A1 (en) | 2012-05-03 |
TWI527089B (zh) | 2016-03-21 |
WO2010147053A1 (ja) | 2010-12-23 |
JP5613159B2 (ja) | 2014-10-22 |
CN102804339B (zh) | 2015-01-14 |
US9765427B2 (en) | 2017-09-19 |
KR101650839B1 (ko) | 2016-08-24 |
CN102804339A (zh) | 2012-11-28 |
TW201110198A (en) | 2011-03-16 |
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