WO2012105313A1 - 気相成長装置 - Google Patents

気相成長装置 Download PDF

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Publication number
WO2012105313A1
WO2012105313A1 PCT/JP2012/050892 JP2012050892W WO2012105313A1 WO 2012105313 A1 WO2012105313 A1 WO 2012105313A1 JP 2012050892 W JP2012050892 W JP 2012050892W WO 2012105313 A1 WO2012105313 A1 WO 2012105313A1
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WO
WIPO (PCT)
Prior art keywords
susceptor
substrate holding
vapor phase
substrate
rolling
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PCT/JP2012/050892
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English (en)
French (fr)
Inventor
和正 池永
康右 内山
Original Assignee
大陽日酸株式会社
大陽日酸イー・エム・シー株式会社
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Application filed by 大陽日酸株式会社, 大陽日酸イー・エム・シー株式会社 filed Critical 大陽日酸株式会社
Priority to KR1020137013894A priority Critical patent/KR20140005163A/ko
Priority to US13/821,426 priority patent/US20130298836A1/en
Priority to CN201280003331XA priority patent/CN103154315A/zh
Publication of WO2012105313A1 publication Critical patent/WO2012105313A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus provided with a mechanism for rotating and revolving a substrate on a susceptor.
  • a vapor phase growth apparatus for supplying a vapor phase raw material into the flow channel while the substrate held on the susceptor in the flow channel is heated to a predetermined temperature and depositing a thin film on the substrate surface, the thin film is uniformly formed on a plurality of substrates.
  • a vapor phase growth apparatus provided with a mechanism for rotating the susceptor and rotating the substrate holding member (substrate tray) holding the substrate along with the rotation of the susceptor to rotate the substrate during film formation.
  • a rolling member is interposed between the susceptor and the substrate holding member so that the substrate holding member rotates smoothly (see, for example, Patent Document 1).
  • the rolling members that rotate adjacent to each other rotate in the opposite directions, so that when the surface of the rolling member deteriorates and the frictional force increases, the rotating member rotates. There is a possibility that the rear rolling member rides on the rolling member forward in the direction. For this reason, it is necessary to periodically replace the rolling member with a new one. However, in order to replace the rolling member, the entire susceptor must be taken out of the chamber. Maintenance was required, which took time and money.
  • an object of the present invention is to provide a vapor phase growth apparatus provided with a self-revolving mechanism that can prevent a rolling member from riding on an adjacent rolling member.
  • the vapor phase growth apparatus of the present invention rotates a plurality of substrate holding members in a circumferential direction of the susceptor via a rolling member on a susceptor heated by a heating unit and rotated by a driving unit.
  • Vapor phase epitaxy provided with a self-revolving structure capable of rotating while rotating the substrate holding member as the susceptor rotates and rotating the substrate held by the substrate holding member with respect to the rotation axis of the susceptor.
  • the rolling member rolling members having different diameters are alternately arranged.
  • vapor phase growth apparatus of the present invention by alternately arranging rolling members having different diameters, adjacent rolling members can be rotated in the same direction, so that the rolling members can be prevented from climbing up. Thus, a stable rotation state can be continued for a long time.
  • the vapor phase growth apparatus shown in this embodiment is a multi-rotation type vapor phase growth apparatus in which six substrates 12 can be placed on the upper surface of a disk-shaped susceptor 11, and the susceptor 11 is made of quartz glass or the like. It is rotatably provided inside a cylindrical flow channel 13 formed by the above.
  • a rotating shaft 14 is provided at the center of the lower surface of the susceptor 11, and a heater 15 and a thermometer 16 for heating the substrate 12 via the susceptor 11 are provided around the rotating shaft 14. Is covered with a reflector 17.
  • a vapor phase material inlet 18 is opened, and an exhaust port 19 is provided on the outer periphery of the bottom plate.
  • the substrate 12 is held by a disk-shaped substrate holding member (substrate tray) 21 having a substrate holding recess 20 on the upper surface, and the substrate holding member 21 is a rolling member having a different diameter formed of carbon or ceramic.
  • the guide member 24 is supported by a disc-shaped guide member 24 via two kinds of balls 22 and 23 having a large diameter and a small diameter, and the guide member 24 is placed in a guide member holding recess 25 provided at equal intervals in the circumferential direction of the susceptor 11. Is retained.
  • an external gear 26 is provided at the lower outer periphery of the substrate holding member 21, and a ring-shaped fixing having an internal gear 27 that meshes with the external gear 26 of the substrate holding member 21 at the outer peripheral position of the susceptor 11.
  • a gear member 28 is provided. Further, a cover member 29 that covers the fixed gear member 28, the internal gear 27 and the external gear 26, and the upper surface of the central portion of the susceptor 11 is provided. The upper surface of the cover member 29 and the substrate holding recess 20 are provided. The upper surface of the outer peripheral portion and the upper surface of the substrate 12 are flush with each other.
  • Ring-shaped V grooves 21 a and 24 a centering on the axis of the substrate 12 are provided opposite to each other on the lower surface of each substrate holding member 21 and the upper surface of each guide member 24, and both V grooves 21 a. 24a, the balls 22 and 23 are held so as to roll.
  • the guide member 24 is formed separately from the susceptor 11 for manufacturing convenience, but a member corresponding to the guide member 24 provided with the V-groove 24a can be formed integrally with the susceptor 11. is there.
  • the susceptor 11 rotates integrally with the rotating shaft 14, and each of the components except for the fixed gear member 28 is rotated along with the rotation of the susceptor 11.
  • the member rotates, and the substrate 12 is rotated around the axis of the susceptor 11, that is, revolved.
  • the external gear 26 meshes with the internal gear 27 of the fixed gear member 28
  • the substrate holding member 21 is rotated around the axis of the substrate holding member 21, that is, is rotated.
  • the substrate 12 held by the substrate holding member 21 revolves around the axis of the susceptor 11.
  • the substrate 12 revolves and the substrate 12 is heated from the heater 15 through the susceptor 11 to a predetermined temperature, for example, 1100 ° C.
  • a predetermined temperature for example, 1100 ° C.
  • a predetermined thin film can be uniformly deposited on the surfaces of the plurality of substrates 12.
  • the two kinds of balls 22 and 23 of large and small disposed between the V groove 21a of the substrate holding member 21 and the V groove 24a of the guide member 24 are used.
  • the ball 22 having a large diameter (large diameter ball) 22 is sandwiched between the V grooves 21a and 24a and is in contact with both, so that the substrate holding member 21 is shown in FIG.
  • the large-diameter ball 22 rotates in the direction of rotation of the substrate holding member 21 shown by arrow B in FIG.
  • the ball (small-diameter ball) 23 having a smaller diameter than the large-diameter ball 22 is positioned below the substrate holding member by its own weight. It will be in the state which contacted only 21 V groove 21a. Therefore, the small-diameter ball 23 is pushed by the large-diameter ball 22 that rotates (arrow B) in the rotation direction (arrow A) of the substrate holding member 21, and the substrate holding member 21 moves toward the rotation direction of the substrate holding member 21. It will advance in the V groove 21a.
  • the large-diameter ball 22 does not ride on the small-diameter ball 23, and the substrate holding member 21 It is supported by 22 and rotates in a stable state.
  • both balls 22 and 23 can be obtained by alternately arranging two types of balls 22 and 23 having different diameters between the V groove 21a of the substrate holding member 21 and the V groove 24a of the guide member 24. Even if the frictional force increases due to deterioration, the ball does not climb up and the substrate holding member 21, that is, the substrate 12 can be rotated in a stable state over a long period of time.
  • the small-diameter ball 23 may be set to have a diameter that does not contact the surface of the V-groove 21a of the substrate holding member 21 supported by the large-diameter ball 22 and is set to a diameter sandwiched between the large-diameter balls 22.
  • the diameter may be 0.1 to 10% smaller than the diameter of the large-diameter ball 22.
  • the frictional force between the balls 22 and 23 can be made larger than the frictional force between the small-diameter ball 23 and the V groove 21a from the time of manufacture.
  • the large-diameter ball 22 and the small-diameter ball 23 can be formed of different materials.
  • the present invention can also be applied to a vapor phase growth apparatus in which the thin film formation surface of the substrate faces downward, a revolution type vapor phase growth apparatus that revolves the substrate with respect to the rotation axis of the susceptor, and a rotation type vapor phase growth that allows only rotation. It can also be used for equipment.
  • the shape of each part can be appropriately set according to various conditions such as the size of the susceptor and the substrate, the cover member can be omitted, and the shape of the rolling member is not limited to the ball, and the rolling member Is not limited to the V-groove.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

転動部材が隣接する転動部材に乗り上がってしまうことを防止することができる自公転機構を備えた気相成長装置である。該気相成長装置は、加熱手段によって加熱されるとともに駆動手段によって回転するサセプタ１１に、該サセプタの周方向に複数の基板保持部材２１を転動部材（ボール２２，２３）を介して回転可能に設け、前記サセプタの回転に伴って前記基板保持部材を回転させ、該基板保持部材に保持された基板１２をサセプタの回転軸に対して公転させながら自転させる自公転構造を備えた気相成長装置において、前記転動部材として、径が異なる転動部材（大径ボール２２及び小径ボール２３）を交互に配置する。

Description

気相成長装置
　本発明は、気相成長装置に関し、詳しくは、サセプタ上の基板を自公転させる機構を備えた気相成長装置に関する。
　フローチャンネル内のサセプタに保持した基板を所定温度に加熱した状態でフローチャンネル内に気相原料を供給し、前記基板面に薄膜を堆積させる気相成長装置として、複数枚の基板に均一に薄膜を形成するため、サセプタを回転させるとともに、該サセプタの回転に伴って基板を保持した基板保持部材（基板トレイ）を回転させ、成膜中の基板を自公転させる機構を備えた気相成長装置が知られている（例えば、特許文献１参照。）。このような自公転機構では、サセプタと基板保持部材との間に転動部材（ベアリング）介在させ、基板保持部材が円滑に回転するようにしている（例えば、特許文献１参照。）。
特開２００７－２４３０６０号公報
　しかし、従来の気相成長装置における自公転機構では、隣接して回転する転動部材は互いに逆回転しているため、転動部材の表面が劣化して摩擦力が大きくなってくると、回転方向前方の転動部材に後方の転動部材が乗り上げてしまうおそれがある。このため、定期的に転動部材を新しいものに交換する必要があるが、転動部材を交換するためには、サセプタ全体をチャンバーの外に出さなければならず、チャンバーの開放など、大掛かりなメンテナンスが必要となり、時間とコストがかかっていた。
　そこで本発明は、転動部材が隣接する転動部材に乗り上がってしまうことを防止することができる自公転機構を備えた気相成長装置を提供することを目的としている。
　上記目的を達成するため、本発明の気相成長装置は、加熱手段によって加熱されるとともに駆動手段によって回転するサセプタに、該サセプタの周方向に複数の基板保持部材を転動部材を介して回転可能に設け、前記サセプタの回転に伴って前記基板保持部材を回転させ、該基板保持部材に保持された基板をサセプタの回転軸に対して公転させながら自転させる自公転構造を備えた気相成長装置において、前記転動部材として、径が異なる転動部材を交互に配置したことを特徴としている。
　本発明の気相成長装置によれば、径が異なる転動部材を交互に配置することにより、隣接する転動部材を同じ方向に回転させることができるため、転動部材の乗り上がりを防止でき、安定した回転状態を長期にわたって継続することができる。
本発明の気相成長装置の一形態例を示す断面図である。 サセプタの平面図である。 要部の説明図である。
　本形態例に示す気相成長装置は、円盤状のサセプタ１１の上面に６枚の基板１２を載置可能とした多数枚自公転型気相成長装置であって、サセプタ１１は、石英ガラス等で形成された円筒状のフローチャンネル１３の内部に回転可能に設けられている。サセプタ１１の下面中心部には回転軸１４が、該回転軸１４の周囲にはサセプタ１１を介して基板１２を加熱するためのヒーター１５や温度計１６がそれぞれ設けられ、ヒーター１５の下方及び周囲は、リフレクター１７で覆われている。フローチャンネル１３の天板中央には、気相原料導入口１８が開口しており、底板外周には排気口１９が設けられている。
　基板１２は、上面に基板保持凹部２０を有する円盤状の基板保持部材（基板トレイ）２１に保持されており、基板保持部材２１は、カーボンやセラミックで形成された径が異なる転動部材である大径、小径の２種類のボール２２，２３を介して円盤状のガイド部材２４にそれぞれ支持され、ガイド部材２４は、サセプタ１１の周方向に等間隔で設けられたガイド部材保持凹部２５内に保持されている。また、基板保持部材２１の外周下部には、外歯車２６が設けられており、サセプタ１１の外周位置には、基板保持部材２１の外歯車２６に歯合する内歯車２７を有するリング状の固定歯車部材２８が設けられている。さらに、固定歯車部材２８の上方、内歯車２７及び外歯車２６の上方、及び、サセプタ１１の中央部上面を覆うカバー部材２９が設けられており、このカバー部材２９の上面、基板保持凹部２０の外周部上面、基板１２の上面が面一になるようにしている。
　互いに対向する各基板保持部材２１の下面及び各ガイド部材２４の上面には、基板１２の軸線を中心とするリング状のＶ溝２１ａ，２４ａが対向してそれぞれ設けられており、両Ｖ溝２１ａ，２４ａ間に前記ボール２２，２３が転動可能に保持されている。なお、ガイド部材２４は、製造上の都合でサセプタ１１とは別体に形成しているが、Ｖ溝２４ａを備えたガイド部材２４に相当するものをサセプタ１１に一体に形成することも可能である。
　基板１２への気相成長を行う際に、回転軸１４を所定速度で回転させると、回転軸１４と一体にサセプタ１１が回転し、このサセプタ１１の回転に伴って固定歯車部材２８を除く各部材が回転し、基板１２は、サセプタ１１の軸線を中心として回転、即ち公転する状態となる。そして、固定歯車部材２８の内歯車２７に外歯車２６が歯合することにより、基板保持部材２１は、該基板保持部材２１の軸線を中心として回転、即ち自転する状態となる。これにより、基板保持部材２１に保持された基板１２が、サセプタ１１の軸線を中心として自公転することになる。
　このようにして基板１２を自公転させ、かつ、ヒーター１５からサセプタ１１などを介して基板１２を所定温度、例えば１１００℃に加熱した状態で、気相原料導入口１８から所定の気相原料、例えばトリメチルガリウムとアンモニアとをフローチャンネル１３内に導入することにより、複数の基板１２の表面に所定の薄膜を均一に堆積させることができる。
　このようにして基板１２の表面に薄膜を堆積させる際に、基板保持部材２１のＶ溝２１ａとガイド部材２４のＶ溝２４ａとの間に配置された大小の２種類のボール２２，２３の中で径が大きなボール（大径ボール）２２は、上下が両Ｖ溝２１ａ，２４ａに挟まれて両方に接触しているため、公転しているガイド部材２４に対して基板保持部材２１が図３の矢印Ａの方向に自転すると、大径ボール２２は、図３の矢印Ｂに示す基板保持部材２１の回転方向に向かって回転する。これに対し、両Ｖ溝２１ａ，２４ａの間隔が大径ボール２２の径によって決まるため、大径ボール２２に比べて径が小さなボール（小径ボール）２３は、自重によって下方に位置する基板保持部材２１のＶ溝２１ａにのみ接触した状態になる。したがって、小径ボール２３は、基板保持部材２１の回転方向（矢印Ａ）に向かって回転（矢印Ｂ）する大径ボール２２に押され、基板保持部材２１の回転方向に向かって基板保持部材２１のＶ溝２１ａ内を進むことになる。
　両Ｖ溝２１ａ，２４ａの表面及び両ボール２２，２３の表面は、製造時には十分に平滑な状態に仕上げられているので、小径ボール２３と大径ボール２２との摩擦力は十分に小さく、大径ボール２２に対して小径ボール２３がどちらの方向に回転しても大径ボール２２が小径ボール２３に乗り上げることはなく、基板保持部材２１は安定した状態で回転する。
　経時変化により両ボール２２，２３の表面が劣化し、小径ボール２３と大径ボール２２との摩擦力が、小径ボール２３とＶ溝２１ａとの摩擦力より大きくなると、小径ボール２３は、大径ボール２２に押されてＶ溝２１ａ内で滑り、大径ボール２２の回転方向（矢印Ｂ）と逆方向の矢印Ｃの方向に回転する状態となる。したがって、隣接する両ボール２２，２３の接触部分は、同じ方向に進むように回転する状態となるので、大径ボール２２が小径ボール２３に乗り上げることはなく、基板保持部材２１は、大径ボール２２に支持されて安定した状態で回転することになる。
　したがって、基板保持部材２１のＶ溝２１ａとガイド部材２４のＶ溝２４ａとの間に、径が異なる大小の２種類のボール２２，２３を交互に配置することにより、両ボール２２，２３の表面が劣化して摩擦力が上昇しても、ボールの乗り上がりが発生することはなく、長期間にわたって基板保持部材２１、すなわち、基板１２を安定した状態で回転させることができる。
　なお、小径ボール２３は、大径ボール２２で支持した基板保持部材２１のＶ溝２１ａの表面に接触しない径で、大径ボール２２同士の間に挟まれる径に設定すればよく、通常は、大径ボール２２の径よりも０．１～１０％小さな径とすればよい。但し、径の差が小さすぎるとボール２２，２３が交互に配置されているかの確認が困難になり、径の差が大きすぎるとボール数が多くなって不経済となり、径の小さなボールの回転抵抗が大きくなる。また、製造時から両ボール２２，２３の摩擦力を小径ボール２３とＶ溝２１ａとの摩擦力より大きくしておくこともできる。さらに、大径ボール２２と小径ボール２３とを異なる材質で形成することもできる。
　また、本発明は、基板の薄膜形成面を下向きにした気相成長装置にも適用でき、基板をサセプタの回転軸に対して公転させる公転型気相成長装置、自転のみさせる自転型気相成長装置にも使用できる。さらに、各部の形状は、サセプタや基板の大きさなどの各種条件に応じて適宜設定することができ、カバー部材を省略することもでき、転動部材の形状はボールに限らず、転動部材の保持もＶ溝に限るものではない。
　１１…サセプタ、１２…基板、１３…フローチャンネル、１４…回転軸、１５…ヒーター、１６…温度計、１７…リフレクター、１８…気相原料導入口、１９…排気口、２０…基板保持凹部、２１…基板保持部材、２１ａ…Ｖ溝、２２…大径ボール、２３…小径ボール、２４…ガイド部材、２４ａ…Ｖ溝、２５…ガイド部材保持凹部、２６…外歯車、２７…内歯車、２８…固定歯車部材、２９…カバー部材

Claims (1)

  1. 　加熱手段によって加熱されるとともに駆動手段によって回転するサセプタに、該サセプタの周方向に複数の基板保持部材を転動部材を介して回転可能に設け、前記サセプタの回転に伴って前記基板保持部材を回転させ、該基板保持部材に保持された基板をサセプタの回転軸に対して公転させながら自転させる自公転構造を備えた気相成長装置において、前記転動部材として、径が異なる転動部材を交互に配置した気相成長装置。
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