JP5436043B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
- Publication number
- JP5436043B2 JP5436043B2 JP2009123662A JP2009123662A JP5436043B2 JP 5436043 B2 JP5436043 B2 JP 5436043B2 JP 2009123662 A JP2009123662 A JP 2009123662A JP 2009123662 A JP2009123662 A JP 2009123662A JP 5436043 B2 JP5436043 B2 JP 5436043B2
- Authority
- JP
- Japan
- Prior art keywords
- external gear
- substrate
- susceptor
- gear member
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 57
- 238000002791 soaking Methods 0.000 claims description 24
- 238000001947 vapour-phase growth Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 description 14
- -1 nitride compound Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Description
Claims (4)
- チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの外周部周方向に形成された複数の円形開口内にそれぞれ設けられたリング状の軸受部材と、各軸受部材上にそれぞれ回転可能に載置された円盤状の均熱板と、各均熱板上にそれぞれ載置された外歯車部材と、該外歯車部材に噛合する内歯車を備えたリング状の固定内歯車部材と、前記外歯車部材の表面に保持された基板を前記サセプタの裏面側から加熱する加熱手段と、前記基板の表面に平行な方向に原料ガスを導くフローチャンネルとを備えた自公転機構を有する横形気相成長装置において、前記軸受部材の外径を前記基板の外径より小さい寸法としたことを特徴とする気相成長装置。
- チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの外周部周方向に設けられた複数の円形開口内にそれぞれ設けられたリング状の軸受部材と、各軸受部材上にそれぞれ回転可能に載置された円盤状の均熱板と、各均熱板上にそれぞれ載置された外歯車部材と、該外歯車部材に噛合する内歯車を備えたリング状の固定内歯車部材と、前記外歯車部材の表面に保持された基板を前記サセプタの裏面側から加熱する加熱手段と、前記基板の表面に平行な方向に原料ガスを導くフローチャンネルとを備えた自公転機構を有する横形気相成長装置において、前記外歯車部材の歯車基準円直径を前記基板の外径より小さい寸法としたことを特徴とする気相成長装置。
- 前記均熱板と外歯車部材との間に、均熱空間部が設けられていることを特徴とする請求項1又は2記載の気相成長装置。
- 前記基板の表面に窒化物系化合物半導体薄膜を成長させることを特徴とする請求項1乃至3のいずれか1項記載の気相成長装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009123662A JP5436043B2 (ja) | 2009-05-22 | 2009-05-22 | 気相成長装置 |
US13/318,890 US20120048198A1 (en) | 2009-05-22 | 2010-05-14 | Vapor phase growth apparatus |
KR1020117030366A KR101650837B1 (ko) | 2009-05-22 | 2010-05-14 | 기상 성장 장치 |
CN201080022518.5A CN102439698B (zh) | 2009-05-22 | 2010-05-14 | 气相生长装置 |
PCT/JP2010/058185 WO2010134471A1 (ja) | 2009-05-22 | 2010-05-14 | 気相成長装置 |
TW099116272A TWI497570B (zh) | 2009-05-22 | 2010-05-21 | Gas growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009123662A JP5436043B2 (ja) | 2009-05-22 | 2009-05-22 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010272708A JP2010272708A (ja) | 2010-12-02 |
JP5436043B2 true JP5436043B2 (ja) | 2014-03-05 |
Family
ID=43126152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009123662A Active JP5436043B2 (ja) | 2009-05-22 | 2009-05-22 | 気相成長装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120048198A1 (ja) |
JP (1) | JP5436043B2 (ja) |
KR (1) | KR101650837B1 (ja) |
CN (1) | CN102439698B (ja) |
TW (1) | TWI497570B (ja) |
WO (1) | WO2010134471A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102485935B (zh) * | 2010-12-06 | 2013-11-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 均热板及应用该均热板的基片处理设备 |
JP2012153927A (ja) * | 2011-01-25 | 2012-08-16 | Sharp Corp | 回転支持構造を有する成膜装置 |
JP2012162752A (ja) * | 2011-02-03 | 2012-08-30 | Taiyo Nippon Sanso Corp | 気相成長装置 |
US20130305992A1 (en) * | 2011-02-04 | 2013-11-21 | Micro System Co., Ltd. | Rotating and holding apparatus for semiconductor substrate and conveying apparatus of rotating and holding apparatus for semiconductor substrate |
JP2012227231A (ja) * | 2011-04-15 | 2012-11-15 | Japan Pionics Co Ltd | Iii族窒化物半導体の気相成長装置 |
CN103834926A (zh) * | 2012-11-22 | 2014-06-04 | 上海法德机械设备有限公司 | 真空镀膜工件转台 |
JP6013155B2 (ja) * | 2012-11-28 | 2016-10-25 | 大陽日酸株式会社 | 気相成長装置 |
JP2015056635A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 気相成長装置及び気相成長方法 |
US9748113B2 (en) | 2015-07-30 | 2017-08-29 | Veeco Intruments Inc. | Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system |
CN106987899B (zh) * | 2016-10-31 | 2021-08-31 | 姜全忠 | 使用气相传输的材料生长装置、生长方法以及检测装置 |
JP6763321B2 (ja) * | 2017-03-01 | 2020-09-30 | 東京エレクトロン株式会社 | 自転検出用冶具、基板処理装置及び基板処理装置の運転方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02130922A (ja) * | 1988-11-11 | 1990-05-18 | Toshiba Corp | 半導体基板エッチング装置 |
JPH04313220A (ja) * | 1991-04-10 | 1992-11-05 | Sumitomo Electric Ind Ltd | 有機金属気相成長装置 |
JP4537566B2 (ja) * | 2000-12-07 | 2010-09-01 | 大陽日酸株式会社 | 基板回転機構を備えた成膜装置 |
JP2003224074A (ja) * | 2002-01-29 | 2003-08-08 | Hitachi Cable Ltd | 気相エピタキシャル成長方法及びその装置並びにそれに用いられる均熱板 |
JP2003347228A (ja) * | 2002-05-30 | 2003-12-05 | Renesas Technology Corp | 半導体装置の製造方法および熱処理装置 |
JP4470680B2 (ja) * | 2004-10-12 | 2010-06-02 | 日立電線株式会社 | 気相成長装置 |
CN1865495A (zh) * | 2005-05-20 | 2006-11-22 | 中国科学院半导体研究所 | 金属有机物化学气相淀积设备反应室中的公转自转机构 |
JP2007042899A (ja) * | 2005-08-03 | 2007-02-15 | Hitachi Cable Ltd | 気相成長装置 |
JP4706531B2 (ja) | 2006-03-27 | 2011-06-22 | 日立電線株式会社 | 気相成長装置 |
JP4830982B2 (ja) * | 2007-06-15 | 2011-12-07 | 住友電気工業株式会社 | 気相成長装置および気相成長方法 |
-
2009
- 2009-05-22 JP JP2009123662A patent/JP5436043B2/ja active Active
-
2010
- 2010-05-14 US US13/318,890 patent/US20120048198A1/en not_active Abandoned
- 2010-05-14 CN CN201080022518.5A patent/CN102439698B/zh active Active
- 2010-05-14 KR KR1020117030366A patent/KR101650837B1/ko active IP Right Grant
- 2010-05-14 WO PCT/JP2010/058185 patent/WO2010134471A1/ja active Application Filing
- 2010-05-21 TW TW099116272A patent/TWI497570B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20120048198A1 (en) | 2012-03-01 |
CN102439698A (zh) | 2012-05-02 |
WO2010134471A1 (ja) | 2010-11-25 |
TW201108303A (en) | 2011-03-01 |
JP2010272708A (ja) | 2010-12-02 |
CN102439698B (zh) | 2014-10-22 |
KR101650837B1 (ko) | 2016-08-24 |
TWI497570B (zh) | 2015-08-21 |
KR20120024798A (ko) | 2012-03-14 |
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