JP5139105B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
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- JP5139105B2 JP5139105B2 JP2008028547A JP2008028547A JP5139105B2 JP 5139105 B2 JP5139105 B2 JP 5139105B2 JP 2008028547 A JP2008028547 A JP 2008028547A JP 2008028547 A JP2008028547 A JP 2008028547A JP 5139105 B2 JP5139105 B2 JP 5139105B2
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- substrate holding
- holding member
- diameter
- susceptor
- rotating gear
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 84
- 125000006850 spacer group Chemical group 0.000 claims description 26
- 238000001947 vapour-phase growth Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005259 measurement Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (2)
- チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの外周部に回転可能に設けられた複数の円筒状の回転歯車部材と、該回転歯車部材に保持される円柱状の基板保持部材と、前記回転歯車部材の外周に設けられた外歯車に歯合する内歯車を備えた固定歯車部材と、前記チャンバーのサセプタ表面側に設けられた原料ガス導入部と、前記チャンバーのサセプタ裏面側に設けられた不活性ガス導入部と、前記チャンバーの反原料ガス導入部側及び反不活性ガス導入部側にそれぞれ設けられた排気部と、前記チャンバーのサセプタ裏面側に設けられた加熱手段とを備えた自公転機構を有する気相成長装置において、前記基板保持部材は、上面に基板載置部を設けた大径部と、該大径部の下面から突出した小径部と、大径部と小径部との間の水平方向の下向き段部とを有し、前記回転歯車部材は、内周上部の前記基板保持部材の大径部を収納する大径収納部と、内周下部の前記基板保持部材の小径部を収納する小径収納部と、大径収納部と小径収納部との間で前記基板保持部材の下向き段部を載置する載置段部とを有し、前記基板保持部材の下向き段部と前記回転歯車部材の載置段部との間に、回転歯車部材に保持した基板保持部材の高さ調整を行うためのスペーサリングを介装したことを特徴とする気相成長装置。
- 前記スペーサリングは、窒化ケイ素と窒化ホウ素との複合材料で形成されることを特徴とする請求項1記載の気相成長装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008028547A JP5139105B2 (ja) | 2008-02-08 | 2008-02-08 | 気相成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008028547A JP5139105B2 (ja) | 2008-02-08 | 2008-02-08 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009188289A JP2009188289A (ja) | 2009-08-20 |
JP5139105B2 true JP5139105B2 (ja) | 2013-02-06 |
Family
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JP2008028547A Active JP5139105B2 (ja) | 2008-02-08 | 2008-02-08 | 気相成長装置 |
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JP (1) | JP5139105B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5144328B2 (ja) * | 2008-03-24 | 2013-02-13 | 大陽日酸株式会社 | 気相成長装置 |
JP2011151344A (ja) * | 2009-12-21 | 2011-08-04 | Showa Denko Kk | Cvd装置用ウェハトレイ、cvd装置用加熱ユニット及びcvd装置。 |
JP5409413B2 (ja) * | 2010-01-26 | 2014-02-05 | 日本パイオニクス株式会社 | Iii族窒化物半導体の気相成長装置 |
JP2013004730A (ja) * | 2011-06-16 | 2013-01-07 | Japan Pionics Co Ltd | 気相成長装置 |
JP2013016549A (ja) * | 2011-06-30 | 2013-01-24 | Japan Pionics Co Ltd | 気相成長装置 |
KR101928356B1 (ko) * | 2012-02-16 | 2018-12-12 | 엘지이노텍 주식회사 | 반도체 제조 장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4537566B2 (ja) * | 2000-12-07 | 2010-09-01 | 大陽日酸株式会社 | 基板回転機構を備えた成膜装置 |
EP1424724A4 (en) * | 2001-08-14 | 2007-10-24 | Powdec Kk | CHEMICAL STEAM EPITAXY APPARATUS |
JP2007243060A (ja) * | 2006-03-10 | 2007-09-20 | Taiyo Nippon Sanso Corp | 気相成長装置 |
JP2007273660A (ja) * | 2006-03-31 | 2007-10-18 | Taiyo Nippon Sanso Corp | 気相成長装置 |
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2008
- 2008-02-08 JP JP2008028547A patent/JP5139105B2/ja active Active
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Publication number | Publication date |
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JP2009188289A (ja) | 2009-08-20 |
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