JP6430337B2 - 気相成長方法および気相成長装置 - Google Patents
気相成長方法および気相成長装置 Download PDFInfo
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- JP6430337B2 JP6430337B2 JP2015135407A JP2015135407A JP6430337B2 JP 6430337 B2 JP6430337 B2 JP 6430337B2 JP 2015135407 A JP2015135407 A JP 2015135407A JP 2015135407 A JP2015135407 A JP 2015135407A JP 6430337 B2 JP6430337 B2 JP 6430337B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
前記複数の膜のうち、前記基板上に形成された膜の総膜厚が閾値に達するまでは、前記複数の膜のそれぞれにおいて前記加熱手段を所定の出力となるように維持する出力一定制御にて前記膜の成長を行い、
前記総膜厚が前記閾値に達した後は、前記基板の温度を放射温度計で測定して、その測定温度が所定温度になるように前記加熱手段の出力を制御する温度フィードバック制御にて前記膜の成長を行う気相成長方法が提供される。
また、他の一実施形態では、基板の上面に気相成長反応により成膜を行う反応室と、
前記反応室にガスを供給するガス供給部と、
前記基板の裏面側から、前記基板を加熱する加熱手段と、
前記基板の上面の上方に配置されて、前記基板の温度を測定する放射温度計と、
前記加熱手段の出力を制御する制御部と、を備え、
前記制御部は、前記基板上に成長された前記総膜厚が閾値に達するまでは、前記加熱手段を所定の出力に維持する出力一定制御を行い、前記閾値に達した後は、前記基板の温度を前記放射温度計で測定して、その測定温度が所定温度になるように前記加熱手段の出力を制御する温度フィードバック制御を行う気相成長装置が提供される。
Claims (5)
- 加熱手段により基板を加熱しながら前記基板上に原料ガスを供給して、気相成長により異なる複数の膜を順次形成する気相成長方法であって、
前記複数の膜のうち、前記基板上に形成された膜の総膜厚が閾値に達するまでは、前記複数の膜のそれぞれにおいて前記加熱手段を所定の出力となるように維持する出力一定制御にて前記膜の成長を行い、
前記総膜厚が前記閾値に達した後は、前記基板の温度を放射温度計で測定して、その測定温度が所定温度になるように前記加熱手段の出力を制御する温度フィードバック制御にて前記膜の成長を行う気相成長方法。 - 前記総膜厚が前記閾値に達するまでは、前記加熱手段の出力を、前記複数の膜のいずれかを形成する直前にサンプリングされた前記加熱手段の出力の平均値に維持する請求項1に記載の気相成長方法。
- 前記総膜厚が前記閾値に達するまでは、前記加熱手段の出力を、膜ごとに、前記加熱手段の出力を個別に設定して、設定した出力を各膜の成膜期間中は維持する請求項1に記載の気相成長方法。
- 前記閾値は、2μm以上の値である請求項1乃至3のいずれかに記載の気相成長方法。
- 基板の上面に気相成長反応により成膜を行う反応室と、
前記反応室にガスを供給するガス供給部と、
前記基板の裏面側から、前記基板を加熱する加熱手段と、
前記基板の上面の上方に配置されて、前記基板の温度を測定する放射温度計と、
前記加熱手段の出力を制御する制御部と、を備え、
前記制御部は、前記基板上に成長された前記総膜厚が閾値に達するまでは、前記加熱手段を所定の出力に維持する出力一定制御を行い、前記閾値に達した後は、前記基板の温度を前記放射温度計で測定して、その測定温度が所定温度になるように前記加熱手段の出力を制御する温度フィードバック制御を行う気相成長装置。
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JP2015135407A JP6430337B2 (ja) | 2015-07-06 | 2015-07-06 | 気相成長方法および気相成長装置 |
US15/201,862 US10011901B2 (en) | 2015-07-06 | 2016-07-05 | Vapor deposition method and vapor deposition apparatus |
DE102016112243.2A DE102016112243B4 (de) | 2015-07-06 | 2016-07-05 | Aufdampfungsverfahren und Aufdampfungsvorrichtung |
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JP3205442B2 (ja) * | 1993-09-09 | 2001-09-04 | 三菱電機株式会社 | 化学気相成長装置および化学気相成長方法 |
JP3058134B2 (ja) | 1997-09-30 | 2000-07-04 | 日本電気株式会社 | 半導体素子の製造方法 |
JPH11140651A (ja) * | 1997-11-04 | 1999-05-25 | Toshiba Corp | Cvd装置およびcvd処理方法 |
JP3795788B2 (ja) | 2001-10-26 | 2006-07-12 | 大日本スクリーン製造株式会社 | 基板の熱処理方法 |
JP4428175B2 (ja) | 2004-09-14 | 2010-03-10 | 株式会社Sumco | 気相エピタキシャル成長装置および半導体ウェーハの製造方法 |
JP2007100175A (ja) * | 2005-10-05 | 2007-04-19 | Toshiba Corp | 気相成長装置、気相成長装置の温度制御方法および半導体装置の製造方法 |
US20120118225A1 (en) | 2010-09-16 | 2012-05-17 | Applied Materials, Inc. | Epitaxial growth temperature control in led manufacture |
US20130316490A1 (en) * | 2010-12-28 | 2013-11-28 | Universite Du Luxembourg | Solar cell and solar cell production method |
JP2013171948A (ja) | 2012-02-20 | 2013-09-02 | Sumitomo Electric Ind Ltd | 発光素子、エピタキシャルウエハおよびその製造方法 |
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DE102016112243B4 (de) | 2021-09-02 |
US20170009375A1 (en) | 2017-01-12 |
JP2017017285A (ja) | 2017-01-19 |
US10011901B2 (en) | 2018-07-03 |
DE102016112243A1 (de) | 2017-01-12 |
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