TWI694170B - 成膜裝置 - Google Patents

成膜裝置 Download PDF

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TWI694170B
TWI694170B TW108103706A TW108103706A TWI694170B TW I694170 B TWI694170 B TW I694170B TW 108103706 A TW108103706 A TW 108103706A TW 108103706 A TW108103706 A TW 108103706A TW I694170 B TWI694170 B TW I694170B
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rotation
shaft
revolution
substrate
film
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須田昇
大石隆宏
米野純次
陳哲霖
劉奕宏
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漢民科技股份有限公司
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    • C—CHEMISTRY; METALLURGY
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    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract

本發明提供一種可使原料氣體的流動為等向性，且可縮小腔室尺寸之成膜裝置。
當基板保持具乃收納有基板之晶座下降時，會與離合機構結合。當驅動驅動用馬達時，自轉用軸便會旋轉，其會透過離合機構而傳達至中心齒輪，來使中心齒輪旋轉。於是，周面乃齒合於中心齒輪之基板保持具便會旋轉，而讓基板自轉。當驅動驅動用馬達時，公轉用軸便會旋轉，其會透過公轉用離合器而傳達至晶座，來讓晶座旋轉且使基板公轉。在進行基板的自轉及公轉之狀態下，由導入口導入製程氣體，而於基板表面形成期望的薄膜。

Description

成膜裝置
本發明係關於一種於基板上藉由氣相成長等來進行成膜之成膜裝置，更具體地係關於一種進行基板的自轉及公轉之旋轉驅動機構的改良者。
作為讓進行成膜的基板旋轉之背景技術，例如有下述專利文獻1所記載之「具有基板旋轉驅動機構的成膜裝置」，其係以基底板來旋轉自如地保持晶座，並藉由公轉產生部而在外周驅動以使其旋轉。另一方面，以晶座所複數配設之基板托盤保持部來旋轉自如地保持環狀的基板托盤，並藉由自轉產生部來轉使其旋轉，則基板便會因公轉產生部與自轉產生部而自轉及公轉。
[先前技術文獻]
[專利文獻]
專利文獻1：日本特開2002-175992號公報
然而，上述背景技術中，由於最外周係具有公轉產生部，即驅動齒輪，故原料氣體的流動模式會在公轉的圓周方向上變得不是等向性。又，由於驅動齒輪係配置於晶座的外周側，而必須使腔室往晶座的徑向擴展，故腔室尺寸會變大，若為了將齒輪模式形成於晶座外周，便會有導致成本變高或耐久性降低之虞。
本發明係著眼於以上般的問題點，其目的為提供一種可使原料氣體的流動為等向性，且可縮小腔室尺寸之成膜裝置。
本發明為一種成膜裝置，係具有成膜用的氣體導入部與排氣部，基板保持具係收納有成膜用基板，該基板保持具係旋轉自如地設置於複數晶座，該晶座係設置於腔室內；將齒合於該複數基板保持具之中心齒輪配置於該晶座的中心，且將該中心齒輪接合於自轉用軸來旋轉驅動，以進行該基板的自轉；將公轉用軸設置於該自轉用軸的外側，且將該公轉用軸接合於該晶座來旋轉驅動該晶座，以進行該基板的公轉。亦即，係在晶座的中心側進行基板的自轉驅動及公轉驅動。
依據主要型態的其中之一，其係於該自轉用軸及該公轉用軸設置有離合機構，再者，係使該離合機構為可使該晶座上下移動之構造。依據其他型態，其係設置有用以獨立地驅動該自轉用軸及該公轉用軸之馬達機構。依據另一其他型態，其係於該公轉用軸與該晶座之間設置有絕熱構造。依據另一其他型態，其係於該晶座的周圍設置有槽縫狀或等間隔地連續之孔狀的等向排氣部。本發明之前述及其他目的、特徵、優點應可由以下的詳細說明及添附圖式來明瞭。
依據本發明，由於基板的自轉及公轉皆是在晶座的中心側進行，故可使成膜用氣體的流動在腔室內為等向性，從而可在基板內及基板間謀求膜質的均勻化。又，可謀求腔室的小型化。
10‧‧‧基板
20‧‧‧基板保持具
21‧‧‧凹部
22‧‧‧軸承
30‧‧‧晶座
31‧‧‧開口
32‧‧‧軸承
40‧‧‧支撐台
50‧‧‧晶座
52‧‧‧分割組件
54‧‧‧開口
56‧‧‧絕熱空間
60‧‧‧公轉用齒輪
62‧‧‧驅動用馬達
64‧‧‧公轉用軸
100‧‧‧腔室
110‧‧‧對向板
111‧‧‧腔室
112‧‧‧導入口
120‧‧‧等向排氣部
122‧‧‧排氣口
124‧‧‧排氣孔
130‧‧‧加熱器
132‧‧‧反射板
200‧‧‧中心齒輪
210‧‧‧自轉用軸
220‧‧‧驅動用馬達
300‧‧‧離合機構
310‧‧‧公轉用軸
312‧‧‧密封件
320‧‧‧驅動用馬達
400‧‧‧自轉用離合器
410‧‧‧凹離合板
412‧‧‧卡合溝
414‧‧‧圓環部
420‧‧‧凸離合板
422‧‧‧突起
500‧‧‧公轉用離合器
510‧‧‧凹離合板
516、526‧‧‧開口
520‧‧‧凸離合板
600‧‧‧自轉用離合器
610‧‧‧凹離合板
612‧‧‧缺口部
614‧‧‧中央開口
620‧‧‧凸離合板
622‧‧‧突起
700‧‧‧自轉用離合器
710‧‧‧凹離合板
712‧‧‧缺口部
714‧‧‧中央開口
720‧‧‧凸離合板
722‧‧‧突起
724‧‧‧圓板
圖1係顯示本發明之實施例1的主要剖面之圖式。
圖2係顯示前述實施例及背景技術中的平面樣態之圖式。
圖3係顯示前述實施例中的離合機構之圖式。
圖4係顯示前述實施例中的離合機構之圖式。
圖5係比較前述實施例與背景技術的腔室來加以顯示之圖式。
圖6係顯示本發明之實施例2的主要部份之圖式。
圖7係顯示本發明之實施例3的主要部份之圖式。
以下，便依據實施例來詳細地說明用以實施本發明之最佳型態。
[實施例1]
首先，參閱圖1~圖5來針對本發明之實施例1加以說明。圖1係顯示本實施例相關之成膜裝置的主要剖面，圖2(A)係顯示沿圖1之箭頭II-II線來往箭頭方向觀看之圖式。該等圖式中，進行成膜的圓板狀基板10係收納在基板保持具(基板托盤)20的中央所設置之凹部21。複數基板保持具20係透過軸承22而可旋轉地設置於以等角度放射狀地設置於晶座30之複數開口31。晶座30係透過軸承32而可旋轉地支撐於圓筒狀的支撐台40上，支撐台40係被固定在腔室100的底面。
腔室100的中心係設置有中心齒輪200，此中心齒輪200會與基板保持具20的外周所設置之齒輪齒合。中心齒輪200的中心軸會成為自轉用軸210，此自轉用軸210係介設有離合機構300。藉此，則驅動用馬達220的旋轉驅動力便會透過自轉用軸210及離合機構300被傳達至中心齒輪200。離合器300係由自轉用離合器400與公轉用離合器500所構成。
另一方面，上述自轉用軸210係旋轉自如地貫穿前述晶座30的中心，圓筒狀的公轉用軸310係圍繞該自轉用軸210般地被加以設置，而接合於前述晶座30。此公轉用軸310亦介設有離合機構300。藉此，則驅動用馬達320的旋轉驅動力便會透過公轉用軸310及離合機構300被傳達至晶座30。
自轉用軸210與公轉用軸310之間係設置有O型環或磁性流體等所構成之密封件(真空密封)212，公轉用軸310與腔室100之間係設置有密封件312。藉由該等來保持腔室100內的氣密性，且自轉用軸210與公轉用軸310可分別獨立地進行旋轉驅動。
腔室100係整體形成為圓筒狀，內部上側係設置有對向板110，上面中央係設置有貫穿前述對向板110且更進一步地連通於內部之製程氣體(材料氣體)導入口112。另一方面，腔室100的下側端部，即前述支撐台40的外周側係設置有為環狀槽縫之等向排氣部120，此等向排氣部120係連接於等間隔地設置於腔室100的側部下側之複數排氣口122。此外，亦可使等向排氣部120並非為槽縫狀，而是如圖2(B)所示般等間隔地設置於圓周上之複數排氣孔124。
再者，上述晶座30的下側係設置有基板加熱用的加熱器130，此加熱器130與腔室100之間，以及與公轉用軸310之間係設置有會反射前述加熱器130的熱之反射板132。
接下來，參閱圖3~圖4來針對上述離合機構300加以說明。圖3(A)係顯示自轉用離合器400的一例之立體圖，同圖(B)、(C)係顯示各部之主要面的樣態。圖4係顯示離合機構300整體的樣態。該等圖式中，自轉用離合器400係由凹離合板410與凸離合板420所構成，該等凹凸離合板410、420係呈對向而介設於自轉用軸210。凹離合板410係設置有圓環部414，其係形成有卡合溝412。另一方面，凸離合板420係設置有突起422。藉由該等突起422會嵌入並卡合於前述卡合溝412，來將自轉用軸210的旋轉傳達至中心齒輪200。公轉用離合器500亦相同，是由凹離合板510與凸離合板520所構成，但與凹凸離合板410、420相較，不同點為中央乃設置有供自轉用軸210旋轉自如地貫穿之開口516、526。
接下來，說明本實施例的整體動作。於基板保持具20收納有基板10之晶座30會使中心對齊而自圖式的上方下降。於是，自轉用離合器400中，凹離合板410與凸離合板420便會卡合，且公轉用離合器500中，凹離合板510與凸離合板520便會卡合。又，晶座30的周面係透過軸承32而被支撐在支撐台40。若在此狀態下驅動驅動用馬達220，則自轉用軸210便會旋轉，其會透過自轉用離合器400被傳達至中心齒輪200來讓中心齒輪200旋轉。於是，周面乃齒合於中心齒輪200之基板保持具20便會在晶座30上旋轉。如此般地來進行基板10的自轉。另一方面，若驅動驅動用馬達320，則公轉用軸310便會旋轉，其會透過公轉用離合器500被傳達至晶座30來讓晶座30旋轉。如此般地來進行基板10的公轉。
依上述方式，在進行基板10的自轉及公轉之狀態下，對加熱器130進行通電來將基板10加熱至期望溫度，並從導入口112導入製程氣體，以於基板10的表面形成期望的薄膜。此時，製程氣體會如圖1中的箭頭所示般地，從晶座30的中心流往周端方向，並通過等向排氣部120再從排氣口122被排氣至腔室外。由於等向排氣部120係如圖2(A)所示般地遍布整圈而形成為槽縫狀，故製程氣體便會從中心朝周端等向性地流動。
圖5係比較本實施例與上述背景技術的腔室尺寸來加以顯示之圖式。同圖(A)為圖1所示之本實施例的情況。同圖(B)為背景技術的情況，公轉用齒輪60係設置於晶座30的周端側，驅動用馬達62的驅動力會透過公轉用軸64被傳達至公轉用齒輪60來使晶座30公轉。若比較兩者，則同圖(B)中，由於係具有公轉用齒輪60，故腔室111會較本實施例要來得大。另一方面，若俯視觀看製程氣體的流動，如圖2(C)所示般地，由於會有流動因公轉用齒輪60而被妨礙的部位(箭頭F2A)與未被妨礙的部位(箭頭F2B)，故會變得不均勻，而變得並非等向性。如此般地，本實施例中，不僅可縮小腔室100的尺寸，且製程氣體的流動亦會變得均勻。
如上所述，依據本實施例，由於自轉、公轉皆係藉由中心軸來加以驅動，故可達成以下效果：
a.可在腔室內使製程氣體的流動為等向性，從而可在基板內及基板間謀求膜質的均勻化。
b.可謀求腔室尺寸的小型化。
c.藉由設置有離合器，可依每個中心齒輪來相對於驅動軸進行晶座的裝卸，從而便可簡便地進行晶座的自動搬送。
d.可任意設定基板的自轉及晶座的公轉速度。
[實施例2]
接下來，參閱圖6來針對本發明之實施例2加以說明。如上所述，由於晶座30係藉由加熱器130而被加熱，故雖會成為高溫狀態，但軸210、310及離合機構300則為較低溫。於是，若該等接觸到高溫的晶座30，便會有因溫度差而發生裂縫導致破損等的可能性。因此，本實施例之晶座50係於其中央附近處，而在與公轉用離合器500的凹離合板510之間設置有分割組件52。分割組件52係成為具有能夠讓自轉用軸210旋轉自如地貫穿的開口54之甜甜圈形狀，且周端側會接合於晶座50。又，在與晶座50之間係設置有絕熱空間56。如此般地，藉由於晶座50與公轉用離合器500之間設置有分割組件52，便可使分割組件52成為不易讓熱通過的材料，又，由於熱會因絕熱空間56而逸散，故能使往公轉用離合器500或公轉用軸310的熱傳導減少，則該等的破損便會減少。
[實施例3]
接下來，參閱圖7來針對本發明之實施例3加以說明。本實施例係顯示離合機構300的其他型態。圖7(A)之範例係於自轉用離合器600的凹離合板610形成有中央開口614且形成有缺口部612之範例。藉由凸離合板620的突起622會嵌入至該缺口部612，便能使自轉用軸210的旋轉被傳達至中心齒輪200。同圖(B)之範例係與前述範例同樣地，於自轉用離合器700的凹離合板710形成有中央開口714且形成有缺口部712之範例。本範例之凸離合板720係成為收納於前述中央開口714的圓板724與收納於缺口部712的突起722所構成之形狀。依據本範例，係藉由將凸離合板720的整體嵌入至凹離合板710的缺口部712與中央開口714，來使自轉用軸210的旋轉被傳達至中心齒輪200。此外，若為公轉用離合器的情況，則係於凹凸之離合板的中央形成有供自轉用軸210旋轉自如地貫穿之開口。
此外，本發明並未限定於上述實施例，可在未脫離本發明之要旨的範圍內來施加各種變更。例如，亦包含有以下所述者。
(1)前述實施例所示之形狀、尺寸僅為一範例，可依需要來適當地變更。
(2)前述實施例中，雖是舉自公轉式氣相成膜裝置為範例來加以說明，但本發明可應用於在水平方向上形成有成膜空間之所有反應爐。
(3)前述實施例中，雖僅顯示成膜用製程氣體，但其他的吹淨氣體等亦是相同。
(4)前述實施例所示之離合構造僅為一範例，可在達成相同效果之範圍內來適當地做設計變更。
(5)前述實施例雖為使基板10的膜形成面朝向上側之範例，但亦可同樣地應用於朝向下側之面向下型裝置。
依據本發明，由於基板的自轉及公轉皆是在晶座的中心側進行，故可使成膜用氣體的流動在腔室內為等向性，從而可在基板內及基板間謀求膜質的均勻化。又，由於可謀求腔室的小型化，故可應用於各種成膜裝置。
10‧‧‧基板
20‧‧‧基板保持具
21‧‧‧凹部
22‧‧‧軸承
30‧‧‧晶座
31‧‧‧開口
32‧‧‧軸承
40‧‧‧支撐台
100‧‧‧腔室
110‧‧‧對向板
112‧‧‧導入口
120‧‧‧等向排氣部
122‧‧‧排氣口
130‧‧‧加熱器
132‧‧‧反射板
200‧‧‧中心齒輪
212、312‧‧‧密封件
220‧‧‧驅動用馬達
300‧‧‧離合機構
320‧‧‧驅動用馬達

Claims (6)

  1. 一種成膜裝置，係具有成膜用的氣體導入部與排氣部，基板保持具係收納有成膜用基板，該基板保持具係旋轉自如地設置於複數晶座，該晶座係設置於腔室內；將齒合於該複數基板保持具之中心齒輪配置於該晶座的中心，且將該中心齒輪接合於自轉用軸來旋轉驅動，以進行該基板的自轉；圍繞該自轉用軸般地將公轉用軸設置於該自轉用軸的外側，且將該公轉用軸接合於該晶座來旋轉驅動該晶座，以進行該基板的公轉。
  2. 如申請專利範圍第1項之成膜裝置，其係於該自轉用軸及該公轉用軸設置有離合機構。
  3. 如申請專利範圍第1或2項之成膜裝置，其係使該離合機構為可使該晶座上下移動之構造。
  4. 如申請專利範圍第1或2項之成膜裝置，其係設置有用以獨立地驅動該自轉用軸及該公轉用軸之馬達機構。
  5. 如申請專利範圍第1或2之成膜裝置，其係於該公轉用軸與該晶座之間設置有絕熱構造。
  6. 如申請專利範圍第1或2項之成膜裝置，其係於該晶座的周圍設置有槽縫狀或等間隔地連續之孔狀的等向排氣部。
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