JP6411231B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
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- JP6411231B2 JP6411231B2 JP2015012594A JP2015012594A JP6411231B2 JP 6411231 B2 JP6411231 B2 JP 6411231B2 JP 2015012594 A JP2015012594 A JP 2015012594A JP 2015012594 A JP2015012594 A JP 2015012594A JP 6411231 B2 JP6411231 B2 JP 6411231B2
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- susceptor
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- 238000003780 insertion Methods 0.000 claims description 29
- 230000037431 insertion Effects 0.000 claims description 29
- 238000001947 vapour-phase growth Methods 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Description
Claims (3)
- 偏平円筒状のチャンバーの下部中央を貫通した回転軸の上端部に円盤状のサセプタの中心部を載置し、前記回転軸によって前記サセプタを回転させる気相成長装置において、前記回転軸の上端部に、前記サセプタの内周部を着脱可能に載置するサセプタ載置部材を着脱可能に設け、サセプタの内周部下面とサセプタ載置部材の上面とに、互いに係合して回転力を伝達するための凹凸係合部を設けるとともに、サセプタの内周部下面とサセプタ載置部材の上面との間に、サセプタの傾斜角度を調節するための調節量が異なる複数の角度調節部材を選択して着脱可能な径方向に長い調節部材挿入溝を周方向の複数箇所に設けたことを特徴とする気相成長装置。
- 前記角度調節部材は、前記調節部材挿入溝の底面に沿って径方向に移動可能な板状の本体部と、該本体部のサセプタ載置部中心側端部から上方に突出した摘み部とを有するL字状に形成され、前記調節部材挿入溝の径方向の長さは、前記本体部が前記サセプタの内周部の下方に挿入された調節位置と、前記本体部が前記サセプタの内周から外れて溝開口から取出可能な着脱位置とに前記角度調節部材が移動可能な長さに設定されていることを特徴とする請求項1記載の気相成長装置。
- 前記角度調節部材が前記調節位置にあるときに、前記摘み部よりサセプタ載置部中心側の調節部材挿入溝内に着脱可能に充填される充填部材を備えていることを特徴とする請求項2記載の気相成長装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015012594A JP6411231B2 (ja) | 2015-01-26 | 2015-01-26 | 気相成長装置 |
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JP2015012594A JP6411231B2 (ja) | 2015-01-26 | 2015-01-26 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016139663A JP2016139663A (ja) | 2016-08-04 |
JP6411231B2 true JP6411231B2 (ja) | 2018-10-24 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015012594A Active JP6411231B2 (ja) | 2015-01-26 | 2015-01-26 | 気相成長装置 |
Country Status (1)
Country | Link |
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JP (1) | JP6411231B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113502535B (zh) * | 2021-09-09 | 2021-12-10 | 材料科学姑苏实验室 | 样品生长装置、样品生长方法及分子束外延系统 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10141350A (ja) * | 1996-11-14 | 1998-05-26 | Kokusai Electric Co Ltd | 水平面度調整機構 |
US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
US20120103265A1 (en) * | 2009-06-19 | 2012-05-03 | Tn Emc Ltd. | Vapor phase growth apparatus |
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- 2015-01-26 JP JP2015012594A patent/JP6411231B2/ja active Active
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JP2016139663A (ja) | 2016-08-04 |
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