JPWO2010117081A1 - エポキシ樹脂組成物 - Google Patents
エポキシ樹脂組成物 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
- C08K5/1515—Three-membered rings
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L51/04—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to rubbers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
- C08L9/06—Copolymers with styrene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
Description
[発明の要約]
線膨張率(α1):60ppm/℃以下
ガラス転移点:120℃以上
貯蔵弾性率(25℃):3.0GPa以下
浸透性(120℃):30mm以上
(A)成分:エポキシ樹脂
(B)成分:1分子内に3個以上のエポキシ基と芳香環とを有する化合物
(C)成分:ブタジエンゴム粉またはアクリルゴム粉
(D)成分:潜在性硬化剤
本発明の第四は、室温で液状の硬化剤を実質的に含まない上記第一〜第三に記載の後浸透封止用のエポキシ樹脂組成物である。
[実施例1〜12]
実施例1〜12を調製するために下記成分を準備した。
・ビスフェノールF型エポキシ樹脂(jER806 ジャパンエポキシレジン株式会社製)
(B)成分:1分子内に3以上のエポキシ基と芳香環を有する化合物
・1分子内に3以上のエポキシ基と芳香環を有する化合物(jER630 ジャパンエポキシレジン株式会社製)
・1分子内に3以上のエポキシ基と芳香環を有する化合物(ELM−100 住友化学株式会社製)
(C)成分:ブタジエンゴム粉またはアクリルゴム粉
・エポキシ樹脂に分散されたブタジエンゴム粉(ゴム含有率:25質量%)(カネエースMX136 カネカ株式会社製)
・アクリルゴム粉(ゼフィアック F351 日本ゼオン株式会社製)
・アクリルゴム粉(GENIOPERL P−52 WackerChemie製)
(D)成分:潜在性硬化剤
・アミンアダクト型硬化剤(フジキュアFXR−1030 富士化成工業株式会社製)
・アミンアダクト型硬化剤(フジキュアFXR−1081 富士化成工業株式会社製)
・アミンアダクト型硬化剤を分散したエポキシ樹脂(ノバキュアHX−3921HP 旭化成エポキシ株式会社製)
その他の成分
・シラン系カップリング剤(KBM−403 信越化学工業株式会社製)
・分散剤(BYK−352 ビックケミー・ジャパン株式会社製)
比較例1〜8を調整するため、実施例1〜12で使用する成分に加えて下記成分を準備した。
(B’):芳香環を有せず1分子内に3のエポキシ基を有する化合物
・1分子内に3のエポキシ基を有する脂肪族化合物(デナコールEX−321 ナガセケムテックス株式会社製)
その他の成分
・4−メチルヘキサヒドロ無水フタル酸/ヘキサヒドロ無水フタル酸=70/30(リカシッド MH−700 新日本理化株式会社)
・シリカ粉(QS−6 MRCユニテック株式会社製)
<粘度測定>
各エポキシ樹脂組成物の温度が室温になってから粘度計により「粘度(Pa・s)」を測定した。詳細な測定方法は以下の通り。その結果を表2にまとめた。本発明では4.0Pa・s以下が適している。
メーカー:東機産業株式会社 TV−33型粘度計(EHD型)
測定条件
コーンローター:3°×R14
回転速度:5.0rpm
測定温度:25℃(温調装置使用)
厚さ100μmの短冊状シックネスゲージを100mm×50mmのガラス板の短辺に平行して配置して、もう一枚のガラス板を若干ずらしてシックネスゲージを挟み込み、クリップでシックネスゲージがずれない様に固定する。ガラス板がずれた位置にエポキシ樹脂組成物を塗布した後、120℃雰囲気で15分放置してガラス板の端部から浸透した距離を確認して「浸透性(mm)」とした。その結果を表2にまとめた。浸透性が悪いと、フィレット(浸透後の組成物の形状)の形成が悪く、信頼性試験において応力が偏り封止剤に対する破壊や被着体との界面におけるはく離をもたらす恐れがある。本発明では、浸透性が30mm以上が適している。
120℃雰囲気で15分の硬化により直径5mmの円筒形硬化物を作成し、長さ10mmに切断する。TMAにより昇温速度10℃/minで昇温して測定を行った。「線膨張率(α1)(ppm/℃)」を測定し、α1とα2の接線の交点により「ガラス転移点(℃)」を測定した。本発明では、Tgが120℃以上、α1が60ppm/℃以下が適している。
120℃雰囲気で15分の硬化により直径5mmの円筒形硬化物を作成し、長さ30mmに切断する。曲げモードで測定を行い、昇温速度3℃/minで昇温する。周波数1Hzで25℃に於ける「貯蔵弾性率(GPa)」を確認した。本発明では、E’(25℃)は3.0GPa以下が適している。
ガラス繊維強化エポキシ樹脂製(FR−4)で10mm×25mm×100mmのテストピースを用いて、一枚目のテストピースに樹脂組成物を均一に広げて、二枚目のテストピースと25mm×10mmの「接着面積」で貼り合わせる。テストピースが動かない様に固定した状態で、熱風乾燥炉により120℃にて15分で硬化させる。テストピースの温度が室温に戻った後、引張速度10mm/minにて二枚のテストピースを逆方向に引っ張って「最大荷重」を測定する。「最大荷重」を「接着面積」で割ることで「引張せん断接着力(MPa)」を計算する。試験の詳細はJISK8681に従う。本発明では、目安として接着力が15MPa以上有れば使用することができる。
半導体と基板が電気的接続をされた状態を擬似的に形成しているTest Element Group(以下、TEGと言う。)により、アンダーフィル剤としての性能を確認することができる。疑似半導体のバンプと疑似基板のパットは電気的に接続されており、TEG内部の配線がすべてデイジーチェーン状に連結している。疑似基板に有る外部電極にテスターの電極を当てて導通性確認をする。TEGの端部にアンダーフィル剤を塗布して、所定方法でアンダーフィル剤を疑似半導体と疑似基板のクリアランスに浸透させて硬化させる。アンダーフィル剤により封止されたTEGをヒートショック試験、ヒートサイクル試験、高温放置試験、低温放置試験、恒温恒湿試験などの信頼性試験に投入した後、電気的接続が確保されていない場合は抵抗値がオーバーロードになる。これにより、アンダーフィル剤の信頼性を擬似的に試験することができる。TEGの仕様、アンダーフィル剤の硬化条件、信頼性試験として行ったヒートサイクル試験の条件は以下の通りである。
TEG仕様
チップ仕様
チップサイズ:9.6mm×9.6mm
チップ厚:725μm
バンプ材質:Sn/3.0Ag/0.5Cu
バンプ高さ:245μm
バンプ形成方法:ボール搭載
パターン仕様
メタルパットピッチ:500μm
メタルパットサイズ:300μm×300μm
パット数:324
アンダーフィル剤硬化条件(浸透工程を含む)
120℃×15分
ヒートサイクル試験
1サイクル:−40×30分+85℃×30分として全2000サイクル実施
テストピース数:5(以下、テストピースをTEGと呼ぶ。)
Claims (4)
- 硬化物の線膨張率(α1)、ガラス転移点、貯蔵弾性率(25℃)、硬化前の浸透性(120℃)が以下の全ての要件を満たす後浸透型封止用のエポキシ樹脂組成物。
線膨張率(α1):60ppm/℃以下
ガラス転移点:120℃以上
貯蔵弾性率(25℃):3.0GPa以下
浸透性(120℃):30mm以上 - 以下の(A)〜(D)成分からなる請求項1に記載の後浸透封止用のエポキシ樹脂組成物。
(A)成分:エポキシ樹脂
(B)成分:1分子内に3以上のエポキシ基と芳香環を有する化合物
(C)成分:ブタジエンゴム粉またはアクリルゴム粉
(D)成分:潜在性硬化剤 - (A)成分と(B)成分の合計100質量部に対して(C)成分が3〜10質量部添加されると共に、(C)成分以外の充填剤を実質的に含まない請求項2に記載の後浸透封止用のエポキシ樹脂組成物。
- 室温で液状の硬化剤を実質的に含まない請求項1〜3のいずれか1項に記載の後浸透封止用のエポキシ樹脂組成物。
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