JPWO2010064303A1 - 太陽電池セルの製造方法 - Google Patents
太陽電池セルの製造方法 Download PDFInfo
- Publication number
- JPWO2010064303A1 JPWO2010064303A1 JP2010541164A JP2010541164A JPWO2010064303A1 JP WO2010064303 A1 JPWO2010064303 A1 JP WO2010064303A1 JP 2010541164 A JP2010541164 A JP 2010541164A JP 2010541164 A JP2010541164 A JP 2010541164A JP WO2010064303 A1 JPWO2010064303 A1 JP WO2010064303A1
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- film
- polycrystalline silicon
- pecvd
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 238000000034 method Methods 0.000 title description 59
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 107
- 238000009792 diffusion process Methods 0.000 claims abstract description 74
- 238000002161 passivation Methods 0.000 claims abstract description 71
- 239000002003 electrode paste Substances 0.000 claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000010304 firing Methods 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- -1 silver aluminum Chemical compound 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 229910052710 silicon Inorganic materials 0.000 description 51
- 239000010703 silicon Substances 0.000 description 51
- 230000000052 comparative effect Effects 0.000 description 28
- 230000008569 process Effects 0.000 description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 27
- 229910052709 silver Inorganic materials 0.000 description 27
- 239000004332 silver Substances 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
11 半導体基板
13 p型多結晶シリコン基板
15 n型拡散層
17 反射防止膜
19 受光面側電極
21 裏面パッシベーション膜
23 裏面側電極
25 表銀グリッド電極
27 表銀バス電極
31 n型拡散層
111 半導体基板
113 p型多結晶シリコン基板
115 n型拡散層
117 反射防止膜
119 受光面側電極
121 Al−BSF層
123 裏面側電極
213 p型多結晶シリコン基板
215 n型拡散層
図1は、本発明の実施の形態1にかかる太陽電池セルの製造方法を説明するためのフローチャートである。図1に示すように、本実施の形態にかかる太陽電池セルの製造方法は、ダメージ層除去およびテクスチャー形成工程(ステップS110)と、裏面パッシベーション膜(PECVD−SiN)形成工程(ステップS120)と、拡散層形成(pn接合の形成)工程(ステップS130)と、反射防止膜(PECVD−SiN)形成工程(ステップS140)と、電極配置工程(ステップS150)と、焼成工程(ステップS160)と、を含む。
実施の形態2では、実施の形態1において説明した太陽電池セルの製造方法の優位性を調べるために、実施例1にかかる太陽電池セルと同じプロセスで実施例2にかかる太陽電池セルを作製した。実施例2にかかる太陽電池セルの構成は実施例1にかかる太陽電池セルと同じであり、太陽電池セルのサイズは、4cm2である。また、比較例2にかかる太陽電池セルを作製し、出力特性の比較を行った。比較例2にかかる太陽電池セルの構成は実施例2にかかる太陽電池セルと同じであり、太陽電池セルのサイズは、実施例2にかかる太陽電池セルと同じ4cm2である。
実施の形態3では、裏面パッシベーション膜であるPECVD−SiN膜の膜質依存性を調べるために、屈折率:n=2.0であるPECVD−SiN膜を膜厚:80nm〜90nmでp型多結晶シリコンウェハの裏面に成膜して実施例3にかかる太陽電池セルを作製した。また、屈折率:n=2.2であるPECVD−SiN膜を膜厚:80nm〜90nmでp型多結晶シリコンウェハの裏面に成膜して実施例4にかかる太陽電池セルを作製した。実施例3および実施例4にかかる太陽電池セルは、実施例1にかかる太陽電池セルと同じプロセスで作製した。実施例3および実施例4にかかる太陽電池セルの構成は実施例1にかかる太陽電池セルと同じであり、太陽電池セルのサイズは、4cm2である。
実施の形態1〜実施の形態3においては、裏面側電極の形成にアルミニウム(Al)ペーストを使用する場合について説明したが、太陽電池セルの相互接続を行ってモジュール化する場合には、裏面側電極の形成には銀アルミニウム(AgAl)ペーストを使用することが好ましい。
実施の形態1〜実施の形態3においては、p型多結晶シリコン基板の裏面は裏面パッシベーション膜であるPECVD−SiN膜でパッシベートされているが、PECVD−SiN膜とシリコン(Si)の界面にPECVD法により成膜されるシリコン酸化膜(以下、PECVD−SiO膜と記述する)を挿入しても良い。一般に、シリコン酸化膜(SiO)とシリコン(Si)との界面、特に熱酸化により形成したシリコン酸化膜(SiO)とシリコン(Si)との界面は準位が少ない、すなわち再結合中心が少ない良好な界面が形成されることが知られている。
Claims (4)
- 第1の導電型の多結晶シリコン基板の一面側にシリコン窒化膜からなるパッシベーション膜をプラズマCVD法により形成する第1工程と、
前記多結晶シリコン基板の他面側に熱拡散により第2の導電型の元素を拡散させて拡散層を形成してpn接合部を形成する第2工程と、
前記拡散層上にシリコン窒化膜からなる反射防止膜をプラズマCVD法により形成する第3工程と、
前記多結晶シリコン基板の他面側に第1の電極ペーストを配置する第4工程と、
前記パッシベーション膜上に第2の電極ペーストを配置する第5工程と、
前記第1の電極ペーストおよび前記第2の電極ペーストを焼成して電極を形成する第6工程と、
を含むことを特徴とする太陽電池セルの製造方法。 - 前記パッシベーション膜および前記反射防止膜は、屈折率が2.0〜2.2のシリコン窒化膜であること、
を特徴とする請求項1に記載の太陽電池セルの製造方法。 - 前記第1の導電型の多結晶シリコン基板が、p型多結晶シリコン基板であり、前記拡散層がn型拡散層であり、
前記第2の電極ペーストとして銀アルミニウム(AgAl)ペーストを用いること、
を特徴とする請求項1に記載の太陽電池セルの製造方法。 - 前記第1工程の前に、前記第1の導電型の多結晶シリコン基板の一面側にシリコン酸化膜をプラズマCVD法により形成する工程を有し、
前記第1工程では、前記シリコン酸化膜上に前記パッシベーション膜を形成すること、
を特徴とする請求項1に記載の太陽電池セルの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/071901 WO2010064303A1 (ja) | 2008-12-02 | 2008-12-02 | 太陽電池セルの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010064303A1 true JPWO2010064303A1 (ja) | 2012-05-10 |
JP5197760B2 JP5197760B2 (ja) | 2013-05-15 |
Family
ID=42232968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010541164A Expired - Fee Related JP5197760B2 (ja) | 2008-12-02 | 2008-12-02 | 太陽電池セルの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8377734B2 (ja) |
EP (1) | EP2365534A4 (ja) |
JP (1) | JP5197760B2 (ja) |
CN (1) | CN102239565B (ja) |
WO (1) | WO2010064303A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010064303A1 (ja) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
CN101976695A (zh) * | 2010-09-28 | 2011-02-16 | 中国科学院微电子研究所 | 一种浅结太阳能电池及其制备方法 |
EP2490268A1 (en) * | 2011-02-03 | 2012-08-22 | Imec | Method for fabricating photovoltaic cells |
US9246024B2 (en) * | 2011-07-14 | 2016-01-26 | International Business Machines Corporation | Photovoltaic device with aluminum plated back surface field and method of forming same |
JP2013135155A (ja) * | 2011-12-27 | 2013-07-08 | Sharp Corp | 太陽電池の製造方法 |
JP2013165160A (ja) * | 2012-02-10 | 2013-08-22 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法及び太陽電池 |
JP5851284B2 (ja) * | 2012-03-01 | 2016-02-03 | 三菱電機株式会社 | 太陽電池の製造方法 |
CN102709335B (zh) * | 2012-05-08 | 2014-12-10 | 常州天合光能有限公司 | 一种利用SiN薄膜针孔形成局部掺杂或金属化的方法 |
TWI505484B (zh) * | 2013-05-31 | 2015-10-21 | Motech Ind Inc | 太陽能電池及其模組 |
KR101867855B1 (ko) * | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | 태양 전지 |
JP6058212B2 (ja) * | 2014-04-16 | 2017-01-11 | 三菱電機株式会社 | 太陽電池および太陽電池の製造方法 |
WO2016043353A1 (ko) * | 2014-09-15 | 2016-03-24 | 주식회사 테스 | 태양전지모듈 |
JP5994895B2 (ja) * | 2015-04-24 | 2016-09-21 | 信越化学工業株式会社 | 太陽電池の製造方法 |
FR3071358B1 (fr) * | 2017-09-15 | 2019-09-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une cellule photovoltaique a homojonction |
CN109686816B (zh) * | 2018-12-06 | 2020-08-18 | 国家电投集团西安太阳能电力有限公司 | 钝化接触n型太阳电池的制备方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2826227B2 (ja) | 1992-03-19 | 1998-11-18 | シャープ株式会社 | 光電変換素子 |
JPH0945945A (ja) | 1995-07-28 | 1997-02-14 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP4496401B2 (ja) | 2000-09-14 | 2010-07-07 | 三菱電機株式会社 | プラズマcvd装置および太陽電池の製造方法 |
JP2002270869A (ja) | 2001-03-12 | 2002-09-20 | Shin Etsu Handotai Co Ltd | 太陽電池 |
NL1020634C2 (nl) * | 2002-05-21 | 2003-11-24 | Otb Group Bv | Werkwijze voor het passiveren van een halfgeleider substraat. |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
JP2005183469A (ja) | 2003-12-16 | 2005-07-07 | Sharp Corp | 太陽電池セル |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US20050172996A1 (en) | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
EP1763086A1 (en) | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method |
WO2006122774A1 (en) * | 2005-05-17 | 2006-11-23 | Interuniversitair Microelektronica Centrum Vzw | Method for the production of photovoltaic cells |
JP4489035B2 (ja) | 2006-02-27 | 2010-06-23 | シャープ株式会社 | 光電変換素子 |
JP4963866B2 (ja) * | 2006-04-28 | 2012-06-27 | シャープ株式会社 | 光電変換素子の製造方法 |
US20090050202A1 (en) * | 2007-08-24 | 2009-02-26 | Industrial Technology Research Institute | Solar cell and method for forming the same |
US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
PT2208238E (pt) * | 2007-11-09 | 2013-07-10 | Sunpreme Inc | Células solares de baixo custo e os métodos para sua produção |
US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
KR100976454B1 (ko) * | 2008-03-04 | 2010-08-17 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
US8309446B2 (en) * | 2008-07-16 | 2012-11-13 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a doping layer mask |
CA2731158A1 (en) * | 2008-07-28 | 2010-02-04 | Day4 Energy Inc. | Crystalline silicon pv cell with selective emitter produced with low temperature precision etch back and passivation process |
WO2010064303A1 (ja) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
DE112010000774T5 (de) * | 2009-01-16 | 2014-06-12 | Newsouth Innovations Pty Limited | Solarzellenverfahren und -strukturen |
US20100243041A1 (en) * | 2009-03-26 | 2010-09-30 | Bp Corporation North America Inc. | Apparatus and Method for Solar Cells with Laser Fired Contacts in Thermally Diffused Doped Regions |
KR101225978B1 (ko) * | 2009-06-25 | 2013-01-24 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
US20110162706A1 (en) * | 2010-01-04 | 2011-07-07 | Applied Materials, Inc. | Passivated polysilicon emitter solar cell and method for manufacturing the same |
KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
EP2490268A1 (en) * | 2011-02-03 | 2012-08-22 | Imec | Method for fabricating photovoltaic cells |
-
2008
- 2008-12-02 WO PCT/JP2008/071901 patent/WO2010064303A1/ja active Application Filing
- 2008-12-02 EP EP08878563.9A patent/EP2365534A4/en not_active Withdrawn
- 2008-12-02 US US13/132,187 patent/US8377734B2/en not_active Expired - Fee Related
- 2008-12-02 JP JP2010541164A patent/JP5197760B2/ja not_active Expired - Fee Related
- 2008-12-02 CN CN200880132194.3A patent/CN102239565B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102239565A (zh) | 2011-11-09 |
CN102239565B (zh) | 2016-04-06 |
EP2365534A4 (en) | 2014-04-02 |
US8377734B2 (en) | 2013-02-19 |
EP2365534A1 (en) | 2011-09-14 |
JP5197760B2 (ja) | 2013-05-15 |
WO2010064303A1 (ja) | 2010-06-10 |
US20110237016A1 (en) | 2011-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5197760B2 (ja) | 太陽電池セルの製造方法 | |
KR101000064B1 (ko) | 이종접합 태양전지 및 그 제조방법 | |
US7910823B2 (en) | Solar cell and manufacturing method thereof | |
JP5172480B2 (ja) | 光電変換装置およびその製造方法 | |
JP5058184B2 (ja) | 光起電力装置の製造方法 | |
JP2013239476A (ja) | 光起電力装置およびその製造方法、光起電力モジュール | |
JP2009515336A (ja) | 高効率の太陽電池及びその調製方法 | |
JP2012243797A (ja) | 太陽電池の製造方法 | |
KR101985835B1 (ko) | 광기전력소자 및 제조 방법 | |
JP2013513964A (ja) | 裏面接点・ヘテロ接合太陽電池 | |
KR20130092494A (ko) | 태양 전지의 제조 방법 및 태양 전지 | |
JP2008034543A (ja) | 光電変換素子およびその製造方法 | |
CN110660883A (zh) | 一种太阳能电池的制备方法及太阳能电池 | |
CN112420855A (zh) | 一种基于p型硅片的太阳能电池片及其制备方法 | |
WO2013100085A1 (ja) | 太陽電池素子、太陽電池素子の製造方法および太陽電池モジュール | |
CN220543926U (zh) | 太阳能电池和光伏组件 | |
Sepeai et al. | Fabrication and characterization of Al-BSF bifacial solar cell | |
JP5645734B2 (ja) | 太陽電池素子 | |
JP5014263B2 (ja) | 光起電力装置およびその製造方法 | |
JP5501549B2 (ja) | 光電変換素子、およびそれから構成される光電変換モジュール | |
CN113555470A (zh) | 一种太阳能电池及其制作方法、光伏组件 | |
CN103904168B (zh) | 太阳能电池单元的制造方法 | |
JP5029921B2 (ja) | 太陽電池セルの製造方法 | |
CN112670368A (zh) | 用于制造太阳能电池的方法和太阳能电池 | |
Schultz et al. | Dielectric rear surface passivation for industrial multicrystalline silicon solar cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130205 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5197760 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |