JPWO2009107196A1 - プラズマ成膜方法、およびプラズマcvd装置 - Google Patents
プラズマ成膜方法、およびプラズマcvd装置 Download PDFInfo
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- JPWO2009107196A1 JPWO2009107196A1 JP2010500472A JP2010500472A JPWO2009107196A1 JP WO2009107196 A1 JPWO2009107196 A1 JP WO2009107196A1 JP 2010500472 A JP2010500472 A JP 2010500472A JP 2010500472 A JP2010500472 A JP 2010500472A JP WO2009107196 A1 JPWO2009107196 A1 JP WO2009107196A1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 33
- 238000010891 electric arc Methods 0.000 claims abstract description 74
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 27
- 239000002784 hot electron Substances 0.000 claims abstract description 19
- 230000007423 decrease Effects 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (5)
- 容量結合型プラズマCVD装置による成膜方法において、
前記容量結合型プラズマCVD装置が備える電極への電力供給をパルス制御によって断続して行い、
前記パルス制御は、
電力供給を停止した後のプラズマ中の電子温度の低下において、電力供給を停止してから高温電子の密度が低下し、アーク放電が発生しないプラズマ状態になるのに要する時間を下限時間とし、電子密度が電力供給を停止してからプラズマ維持が困難となる残留プラズマ閾値となるまでの上限時間とする時間間隔を、電力供給を停止するオフ時間とし、
電力供給を開始した後のプラズマ中の電子温度の上昇において、高温電子の密度が飽和する電力供給のオン時間の上限とする条件で電力供給を断続することにより、アーク放電の発生を抑制することを特徴とする、プラズマ成膜方法。 - 容量結合型プラズマCVD装置による成膜方法において、
前記容量結合型プラズマCVD装置が備える電極への電力供給をパルス制御によって断続して行い、
前記パルス制御は、150kHzから600kHzの低周波RF電力を、電力供給を停止するオフ時間を20マイクロ秒から50マイクロ秒、電力供給を行うオン時間を1000マイクロ秒以下の条件で断続して供給することにより、アーク放電の発生を抑制することを特徴とする、プラズマ成膜方法。 - 前記容量結合型プラズマCVD装置は結晶系太陽電池用窒化膜を成膜し、CVDプロセス時の基板の温度は400℃以上であることを特徴とする、請求項1又は2に記載のプラズマ成膜方法。
- 内部にRF電極を有し、当該RF電極と対向配置した基板上にプラズマCVDによって薄膜を形成する成膜室と、
前記RF電極に低周波RF電力を供給するRF電源と、
前記RF電源からRF電極への電力供給を制御するパルス制御部とを備え、
前記RF電源は、150kHzから600kHzの低周波RF電力を出力し、
前記パルス制御部は、前記低周波RF電力を、オフ時間を20マイクロ秒から50マイクロ秒、オン時間を1000マイクロ秒以下とする条件でパルス制御して断続するパルス電力を形成することにより、アーク放電の発生を抑制することを特徴とする、プラズマCVD装置。 - 前記成膜室は、CVDプロセス時の基板の温度を400℃以上とし、基板上に結晶系太陽電池用窒化膜を成膜することを特徴とする、請求項4に記載のプラズマCVD装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2008/053249 WO2009107196A1 (ja) | 2008-02-26 | 2008-02-26 | プラズマ成膜方法、およびプラズマcvd装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2009107196A1 true JPWO2009107196A1 (ja) | 2011-06-30 |
JP5530350B2 JP5530350B2 (ja) | 2014-06-25 |
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JP2010500472A Expired - Fee Related JP5530350B2 (ja) | 2008-02-26 | 2008-02-26 | プラズマ成膜方法、およびプラズマcvd装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8272348B2 (ja) |
JP (1) | JP5530350B2 (ja) |
CN (1) | CN101874293B (ja) |
TW (1) | TWI429782B (ja) |
WO (1) | WO2009107196A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI409960B (zh) * | 2010-01-12 | 2013-09-21 | Tainergy Tech Co Ltd | 沉積太陽能電池之抗反射層的方法 |
US8483574B2 (en) | 2010-10-15 | 2013-07-09 | Tyco Electronics Subsea Communications, Llc | Correlation-control QPSK transmitter |
JPWO2012160718A1 (ja) * | 2011-05-20 | 2014-07-31 | 株式会社島津製作所 | 薄膜形成装置 |
KR102177210B1 (ko) * | 2013-08-19 | 2020-11-11 | 삼성디스플레이 주식회사 | 화학기상증착장치의 서셉터 이상유무 판단방법 및 이를 이용한 유기발광 디스플레이 장치 제조방법 |
US10840114B1 (en) | 2016-07-26 | 2020-11-17 | Raytheon Company | Rapid thermal anneal apparatus and method |
CN111238669B (zh) * | 2018-11-29 | 2022-05-13 | 拓荆科技股份有限公司 | 用于半导体射频处理装置的温度测量方法 |
CN114424447A (zh) | 2019-07-29 | 2022-04-29 | 先进工程解决方案全球控股私人有限公司 | 用于多个负载的脉冲驱动的具有通道偏移的多路复用功率发生器输出 |
CN114438477A (zh) * | 2020-11-02 | 2022-05-06 | 江苏菲沃泰纳米科技股份有限公司 | 循环镀膜方法、膜层以及产品 |
Family Cites Families (12)
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JP2715200B2 (ja) * | 1991-10-04 | 1998-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6037274A (en) * | 1995-02-17 | 2000-03-14 | Fujitsu Limited | Method for forming insulating film |
JP2002110587A (ja) | 2000-07-28 | 2002-04-12 | Sekisui Chem Co Ltd | 半導体素子の製造方法 |
JP2004014494A (ja) | 2002-06-07 | 2004-01-15 | Mori Engineering:Kk | 大気圧プラズマ発生装置 |
EP2565903B1 (en) * | 2003-01-16 | 2014-09-10 | Japan Science and Technology Agency | Plasma generator |
JP2005050905A (ja) * | 2003-07-30 | 2005-02-24 | Sharp Corp | シリコン薄膜太陽電池の製造方法 |
GB2417251A (en) * | 2004-08-18 | 2006-02-22 | Nanofilm Technologies Int | Removing material from a substrate surface using plasma |
JP2006228933A (ja) * | 2005-02-17 | 2006-08-31 | Masayoshi Murata | 高周波プラズマ発生装置と、該高周波プラズマ発生装置により構成された表面処理装置及び表面処理方法 |
JP5084426B2 (ja) * | 2007-09-27 | 2012-11-28 | 富士フイルム株式会社 | 窒化シリコン膜の形成方法 |
JP5069581B2 (ja) * | 2008-02-01 | 2012-11-07 | 富士フイルム株式会社 | ガスバリア膜の成膜方法、ガスバリアフィルムおよび有機el素子 |
JP5156552B2 (ja) * | 2008-09-08 | 2013-03-06 | 富士フイルム株式会社 | ガスバリアフィルムの製造方法 |
KR101510775B1 (ko) * | 2008-11-24 | 2015-04-10 | 삼성전자주식회사 | 동기식 펄스 플라즈마 에칭 장비 |
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2008
- 2008-02-26 CN CN2008801174874A patent/CN101874293B/zh not_active Expired - Fee Related
- 2008-02-26 WO PCT/JP2008/053249 patent/WO2009107196A1/ja active Application Filing
- 2008-02-26 JP JP2010500472A patent/JP5530350B2/ja not_active Expired - Fee Related
- 2008-02-26 US US12/811,333 patent/US8272348B2/en not_active Expired - Fee Related
- 2008-10-23 TW TW097140683A patent/TWI429782B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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CN101874293B (zh) | 2011-11-30 |
US20100285629A1 (en) | 2010-11-11 |
WO2009107196A1 (ja) | 2009-09-03 |
US8272348B2 (en) | 2012-09-25 |
CN101874293A (zh) | 2010-10-27 |
JP5530350B2 (ja) | 2014-06-25 |
TWI429782B (zh) | 2014-03-11 |
TW200936801A (en) | 2009-09-01 |
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