JP2013196822A - プラズマ生成方法、この方法を用いた薄膜形成方法及びプラズマ生成装置 - Google Patents
プラズマ生成方法、この方法を用いた薄膜形成方法及びプラズマ生成装置 Download PDFInfo
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Abstract
【解決手段】プラズマ生成方法及びプラズマ生成装置では、プラズマを着火するために、高周波電源部は第1の電力を出力してプラズマ生成部に給電する。プラズマの着火後、前記プラズマの生成を維持するために、前記高周波電源部は前記第1の電力に比べて小さい第2の電力を出力してプラズマ生成部に給電する。前記プラズマを着火するとき、及び前記プラズマの生成を維持するとき、前記プラズマ生成部に電力を伝送する伝送部のインピーダンスが、前記プラズマの生成を維持する期間中の前記プラズマ生成部のインピーダンスと整合した状態で、前記高周波電源部は、前記第1の電力あるいは前記第2の電力を出力する。この方法を用いて薄膜形成方法を行う。
【選択図】 図3
Description
インピーダンス整合器は、例えば、2つの可変コンデンサを用いた構成が採用される(特許文献1)。
図8に示すように、RF電源部102とプラズマ生成部104との間にインピーダンス整合器100が接続される。インピーダンス整合器100は、可変コンデンサ106及び可変コンデンサ108と、電力の反射率を測定するRFセンサ110と、を含む。インピーダンス整合器100では、RFセンサ110の測定結果に応じて生成されるシーケンサ112の制御信号に応じてモータ114,116が駆動して、可変コンデンサ106と可変コンデンサ108のキャパシタンスが調整される。
原子層成長方法では、所望の厚さの薄膜を形成するのに、プラズマを数十〜数千回生成する。このとき、プラズマの生成前のプラズマ生成部104のインピーダンスと、プラズマの生成後のプラズマ生成部104のインピーダンスは異なるので、プラズマの着火と同時に、プラズマの生成前の整合状態から、可変コンデンサ106と可変コンデンサ108のキャパシタンスを大きく変更してプラズマの生成後の整合状態にしなければならない。しかも、プラズマの生成時間は、薄膜の損傷を抑制する点から短時間であるので、短時間にキャパシタンスの調整がされなければならない。すなわち、原子層成長方法においては、特にインピーダンスの整合のために、可変コンデンサ106と可変コンデンサ108のキャパシタンスを短時間に大きく動かすことから、インピーダンス整合器100の耐久限度回数を使用開始から短期間で越えてしまう場合が多い。
さらに、プラズマの着火からインピーダンスの整合までの時間は、プロセスの条件や処理容器の内部汚れ等によって変化するため、プラズマの生成のために供給される有効な電力はばらつき易く、その結果、形成される薄膜の均質化にも悪影響を与える。
プラズマを着火するために、高周波電源部が第1の電力を出力してプラズマ生成部に給電するステップと、
前記プラズマの着火後、前記プラズマの生成を維持するために、前記高周波電源部が前記第1の電力より小さい第2の電力を出力して前記プラズマ生成部に給電するステップと、を有する。
前記プラズマを着火するとき、及び前記プラズマの生成を維持するとき、前記プラズマ生成部に電力を伝送する伝送部のインピーダンスが、前記プラズマの生成を維持する期間中の前記プラズマ生成部のインピーダンスと整合した状態で、前記高周波電源部は、前記第1の電力あるいは前記第2の電力を出力する。
当該方法は、
基板に形成しようとする原料ガスの薄膜成分を減圧容器内で吸着させる第1ステップと、
前記原料ガスの薄膜成分を前記基板に吸着させた後、前記減圧容器内から前記原料ガスを排気する第2ステップと、
前記減圧容器内に反応ガスを導入し、前記反応ガスを用いて前記プラズマの着火及び前記プラズマの生成維持を、前記第1の電力及び前記第2の電力を用いて行うことにより、前記プラズマで活性化した前記反応ガスの成分を用いて、前記基板に吸着した前記原料ガスの薄膜成分と反応させて薄膜を形成する第3ステップと、
前記反応ガスを前記減圧容器内から排気する第4ステップと、を有し、
前記第1ステップ〜前記第4ステップを繰り返し行うことにより、前記形成される薄膜を厚くする。
当該装置は、
高周波電源部と、
前記高周波電源からの給電によりプラズマを生成するプラズマ生成部と、
前記プラズマ生成部と前記高周波電源との間に接続されるインピーダンス整合器と、を有する。
前記高周波電源部は、前記電力の出力開始時に、前記プラズマ生成部によって前記プラズマが着火するために第1の電力を出力し、前記プラズマの着火後、前記プラズマの生成を維持するために前記第1の電力より小さい第2の電力を出力するように構成される。
前記プラズマを着火するとき、及び前記プラズマの生成を維持するとき、前記プラズマ生成部に給電する伝送部のインピーダンスが、前記プラズマの生成を維持する期間中の前記プラズマ生成部のインピーダンスと整合した状態で、前記高周波電源部は、前記第1の電力あるいは前記第2の電力を出力するように構成される。
図1Aに示す薄膜形成装置10は、化学気相成長法の一つであるALD(Atomic Layer Deposition)法を用いて薄膜を形成する装置である。本実施形態に用いるALD法は、プラズマを用いて薄膜をより効率よく形成することができるプラズマALD法である。プラズマALD法では、薄膜の主成分を含む原料ガスの原料成分を基板に吸着させた後、この原料成分を、プラズマを用いて活性化した反応ガスの成分(ラジカル分子あるいはラジカル原子)を用いて化学反応をさせることにより、原子層単位で基板に薄膜を形成する処理を、複数回繰り返す。これにより、目的とする薄膜が形成される。
本実施形態のプラズマ生成方法及びプラズマ生成装置は、プラズマALD法及びこの方法を実行する薄膜形成装置に用いられるが、プラズマALD法の他、プラズマを用いたCVD(Chemical Vapor Deposition)法にも適用することができる。また、プラズマ生成方法及びプラズマ生成装置は、薄膜形成の他、ドライエッチング等に用いるプラズマの生成にも適用することができる。
薄膜形成装置10は、プラズマ生成装置12とガス供給/排気ユニット14を主に有する。プラズマ生成装置12は、プラズマ生成部16と、高周波電源部(RF電源部)18と、インピーダンス整合器20と、レシピコントローラ22と、を含む。ガス供給/排気ユニット14は、原料ガス供給部24と、反応ガス供給部26と、パージガス供給部28と、排気部30と、を含む。
減圧容器31は、減圧可能な容器であり、図1Aに示すように、減圧容器31の両側にガス導入口36a,36b,36c及びガス排気口36dを有する。ガス導入口36aは、パージガス供給部28と接続され、窒素ガス等のパージガスを減圧容器31内に導入する。ガス導入口36bは、原料ガス供給部24と接続され、TMA(Trimethylalminium)等の原料ガスを減圧容器31内に導入する。ガス導入口36bは、原料ガス供給部24と接続され、TMAガス等の原料ガスを減圧容器31内に導入する。ガス導入口36cは、反応ガス供給部26と接続され、酸素ガス等の反応ガスを減圧容器31内に導入する。ガス排気口36dは、排気部30と接続され、減圧容器31の空間の圧力を一定に維持するために、原料ガス、反応ガス及びパージガスを排気する。
具体的には、RF電源部18と電極34aとの間には、RFセンサ20cと、可変コンデンサ20dと、インダクタ20hが、順番に直列接続して設けられている。RFセンサ20cは、RF電源部18が出力する電力、すなわちプラズマ生成部16への入射電力と、プラズマ生成部16によって反射された反射電力との間の比率を計測する。この計測結果に基づいて、インピーダンスの不整合の状態を検知することができる。RFセンサ20cの検知結果は、シーケンサ20aに送られ、インピーダンスの整合(マッチング)のためのシーケンス制御に用いられる。
シーケンサ18aは、RF電力の出力、プラズマの着火の有無の判定、及びプラズマの着火によってRF電源部18の出力する電力を低下させる処理等を行うように制御する。
シーケンサ22aは、RF電源部18及びインピーダンス整合器20の動作を制御するための各種制御信号を送るとともに、カウンタ部22bによる未着火回数や未着火サイクル回数のカウント結果を得ることで、プラズマを用いた薄膜の形成が有効に行われたか否かの情報を記憶する。上記情報は、必要に応じて図示されないディスプレイに表示されることによりオペレータに通知することができる。
まず、減圧容器31内で、所定の圧力、例えば10〜1000Paの減圧雰囲気で、図2(a)に示すように、原料ガスがガス導入口36bから供給され、原料ガスの成分である薄膜の原料成分が基板Sに原子層の単位で吸着される。その際、一定の減圧雰囲気に維持されるように、ガス排気口36dから原料ガスは同時に排気される。この後、原料ガスの供給は終了する。この後、図2(b)に示すように、パージガスがガス導入口36aから減圧容器31内に供給される。このパージガスの供給により、減圧容器31内に残存する原料ガスがパージガスとともに確実にガス排気口36dから排気される。
この状態で、図2(c)に示すように、反応ガスがガス導入口36cから減圧容器31内に供給される。このとき、ガス排気口36dから常時反応ガスの排気が行われ、減圧容器31内は一定の圧力に維持されている。反応ガスの供給中、図2(d)に示すように、反応ガスの供給から僅かに遅れてRF電源部18は高周波電力を出力し、電極34a,34b間に高周波の電圧が印加される。これにより、電極34a,34bの間の空間で、反応ガスを用いたプラズマが生成される。このプラズマによって反応ガスの一部が電離したイオンから、中性状態であるがラジカル状態の分子(ラジカル分子)または原子(ラジカル原子)となり、このイオン、ラジカル分子またはラジカル原子が基板Sに吸着した薄膜の原料成分と化学反応を起こす。これにより、基板Sに薄膜を原子層の単位で形成される。この後、図2(e)に示すように、減圧容器31内にパージガスがガス導入口36aから供給されて、減圧容器31内に残存する未反応ガスがパージガスとともに、ガス排気口36dから排気される。このような一連の処理を1サイクルとして、プラズマALD法では、数10〜数1000回のサイクルが繰り返されて、目標の厚さの薄膜が形成される。
一方、点Dは、プラズマが着火してプラズマが生成したときのインピーダンスが整合するプラズマ整合点である。この点Dは、プラズマ生成の条件、例えば、電力の大小、減圧の圧力、反応ガスの分圧、減圧容器31内部の汚れ等によってある範囲内で位置が変動する。いま、点A、点B及び点Dの座標上の経路が直線上に並んでいるとして、キャパシタンスC2,C1の状態変化を表す軸Sを定める。
図5中、プラズマの未生成状態における整合点である点AにキャパシタンスC2,C1を定めたときの電極34a,34b間の印加電圧の変化を示す曲線L1,L2を示している。曲線L1は、RF電源部18が第1の電力W1を出力してプラズマ生成部16に給電したときの曲線であり、曲線L2は、RF電源部18が第2の電力W2を出力してプラズマ生成部16に給電したときの曲線である。また、プラズマ生成中の整合点である点Dにインピーダンス整合器20の可変抵抗20f,20gのキャパシタンスC2,C1を固定し、RF電源部18が第2の電力W2を出力してプラズマ生成部16に給電したときの電極34a,34b間の印加電圧の変化を示す曲線L3を示している。
しかも、一旦、プラズマ整合点である点Dが見出されると、キャパシタンスC2,C1を点Dの位置に固定するので、駆動モータ20f,20gによる調整時間が全くなくなる。このため、第2の電力W2を用いて効率的にプラズマの生成を行うことができる。
本実施形態では、この最大レベル及び最長出力時間を第1の電力W1の出力レベル及び出力時間の上限とする。
図6(b)は、実際に行われる第1の電力W1の出力の一例を示している。図6(b)に示す例では、RF電源部18のRFセンサ18cが上述したようにプラズマ着火を検知することにより、第1の電力W1の出力を停止し、第2の電力W2の出力に切り替わる。したがって、プラズマは、電力の立ち上がり途中で第1の電力W1の前に着火する。
すなわち、第1の電力W1の出力時間はレシピコントローラ22において設定されている上記最長出力時間より短い。このようにRFセンサ18cがプラズマ着火を検知すると、第1の電力W1の出力を停止し、第2の電力W2の出力を開始するのは、プラズマが着火すると、第2の電力W2より大きな第1の電力W1をRF電源部18が出力する必要はなく、第2の電力W2を用いてプラズマを継続して生成すればよいからである。このように、第1の電力W1の出力時間は、電力の立ち上がり期間中に発生するプラズマの着火の時点に依存するとともに、第1の電力W1のレベルも変動する。しかし、プラズマ未生成の状態では、伝送部のインピーダンスがプラズマ生成部16と整合していないので、電力の立ち上がり期間中にプラズマが着火する時の電力は、第2の電力W2より高い。つまり、図6(b)に示す第1の電力W1は、レシピコントローラ22が予め設定した電力ではなく、電力の立ち上がり期間中にプラズマが着火することで、第2の電力W2に切り替える時の電力である。本実施形態における第1の電力W1は、このようにプラズマの生成を維持するために用いる予め定めた第2の電力W2より大きく、プラズマの着火のために用いる電力である。なお、第2の電力W2を第1の電力W1より小さくすることで、電力の大きな第1の電力W1によって生成されるプラズマにより、形成された薄膜の表面が損傷することを防止することができる。なお、第2の電力W2の出力継続時間は、図6(a)に示す継続時間と同じであり、T2である。
図7A〜7Bは、プラズマ生成方法のフローの一部を詳細に説明するフローチャートである。
図7Aはレシピコントローラ22のフローを示し、図7BはRF電源部18のフローを示し、図7Cはインピーダンス整合器20のフローを示す。
この後、シーケンサ22aは、ALDサイクル回数N1が予め定められた規定値に達したか否かを判定する(ステップS210)。この判定の結果が否定の場合(NOの場合)、ステップ20に戻り、次のALDサイクル処理を開始する。一方、ステップS210の判定の結果が肯定である場合(YESの場合)、シーケンサ22aは、RFスタンバイ信号をOFFとする(ステップS220)。OFFとなったRFスタンバイ信号は、RF電源部18に送られ、RF電源部18を高周波電力の出力開始の待機状態にし(ステップS390)、インピーダンス整合器20のカウンタ部20bは、マッチング自動整合回数(パルス数)N2を0にリセットする(ステップS420)。以上で、バッチ処理は正常な状態で終了する。
まず、レシピコントローラ22から送られるONのRFスタンバイ信号により、RF電源は待機状態になる(ステップS300)。この後、レシピコントローラ22から送られるONのパルスON・OFF信号により電源18bは第1の電力W1を出力する(ステップS310)。
このようなプラズマの生成は、短時間の間にプラズマの生成及び停止を行う処理を断続的に繰り返すプラズマALD法において特に有効に用いることができる。
12 プラズマ生成装置
14 ガス供給/排気ユニット
16,104 プラズマ生成部
18,102 高周波電源部(RF電源部)
20,100 インピーダンス整合器
20a,112 シーケンサ
20b カウンタ部
20c,110 RFセンサ
20d,20e,106,108 可変コンデンサ
20f,20g,114,116 駆動モータ
20h インダクタ
22 レシピコントローラ
24 原料ガス供給部
26 反応ガス供給部
28 パージガス供給部
30 排気部
31 減圧容器
32 サセプタ
34a,34b 電極
Claims (9)
- プラズマを生成するプラズマ生成方法であって、
プラズマを着火するために、高周波電源部が第1の電力を出力してプラズマ生成部に給電するステップと、
前記プラズマの着火後、前記プラズマの生成を維持するために、前記高周波電源部が前記第1の電力より小さい第2の電力を出力して前記プラズマ生成部に給電するステップと、を有し、
前記プラズマを着火するとき、及び前記プラズマの生成を維持するとき、前記プラズマ生成部に電力を伝送する伝送部のインピーダンスが、前記プラズマの生成を維持する期間中の前記プラズマ生成部のインピーダンスと整合した状態で、前記高周波電源部は、前記第1の電力あるいは前記第2の電力を出力する、ことを特徴とするプラズマ生成方法。 - 前記プラズマの着火及び生成の維持は、前記第1の電力及び前記第2の電力を組として周期的に給電する一連の処理を行うことで、周期的に行われ、
前記一連の処理の開始から予め定められた回数の給電の期間内に、前記伝送部のインピーダンスと前記プラズマ生成中の前記プラズマ生成部のインピーダンスが整合するように、前記プラズマ生成部に接続されたインピーダンス整合器が調整される、請求項1に記載のプラズマ生成方法。 - 前記インピーダンス整合器の調整が終了した後は、前記インピーダンス整合器の調整した状態が固定される、請求項2に記載のプラズマ生成方法。
- 前記第1の電力の出力時間は、前記第2の電力の出力時間に比べて短い、請求項1〜3のいずれか1項に記載のプラズマ生成方法。
- 請求項1〜4のいずれか1項に記載のプラズマ生成方法を用いた薄膜形成方法であって、
基板に形成しようとする原料ガスの薄膜成分を減圧容器内で吸着させる第1ステップと、
前記原料ガスの薄膜成分を前記基板に吸着させた後、前記減圧容器内から前記原料ガスを排気する第2ステップと、
前記減圧容器内に反応ガスを導入し、前記反応ガスを用いて前記プラズマの着火及び前記プラズマの生成維持を、前記第1の電力及び前記第2の電力を用いて行うことにより、前記プラズマで活性化した前記反応ガスの成分を用いて、前記基板に吸着した前記原料ガスの薄膜成分と反応させて薄膜を形成する第3ステップと、
前記反応ガスを前記減圧容器内から排気する第4ステップと、を有し、
前記第1ステップ〜前記第4ステップを繰り返し行うことにより、前記形成される薄膜を厚くする、薄膜形成方法。 - プラズマを生成するプラズマ生成装置であって、
高周波電源部と、
前記高周波電源部からの給電によりプラズマを生成するプラズマ生成部と、
前記プラズマ生成部と前記高周波電源との間に接続されるインピーダンス整合器と、を有し、
前記高周波電源部は、前記電力の出力開始時に、前記プラズマ生成部によって前記プラズマが着火するために第1の電力を出力し、前記プラズマの着火後、前記プラズマの生成を維持するために前記第1の電力より小さい第2の電力を出力するように構成され、
前記プラズマを着火するとき、及び前記プラズマの生成を維持するとき、前記プラズマ生成部に電力を伝送する伝送部のインピーダンスが、前記プラズマの生成を維持する期間中の前記プラズマ生成部のインピーダンスと整合した状態で、前記高周波電源部は、前記第1の電力あるいは前記第2の電力を出力するように構成される、ことを特徴とするプラズマ生成装置。 - 前記プラズマの着火及び生成の維持は、前記第1の電力及び前記第2の電力を組として周期的に給電する一連の処理を行うことで、周期的に行われ、
前記インピーダンス整合器は、前記一連の処理を行うとき、前記一連の処理の開始から予め定められた回数の給電の期間内に、前記伝送部のインピーダンスと、前記プラズマ生成中の前記プラズマ生成部のインピーダンスとが整合するように調整される、請求項6に記載のプラズマ生成装置。 - 前記インピーダンス整合器は、前記インピーダンス整合器の調整が終了した後は、前記インピーダンス整合器の調整した状態を固定するように構成されている、請求項7に記載のプラズマ生成装置。
- 前記第1の電力の出力時間は、前記第2の電力の出力時間よりも短い、請求項6〜8のいずれか1項に記載のプラズマ生成装置。
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---|---|---|---|---|
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11329787A (ja) * | 1998-05-20 | 1999-11-30 | Mitsubishi Electric Corp | プラズマ発生用高周波ソースシステムおよび当該システムを含むプラズマ発生装置 |
JP2009191311A (ja) * | 2008-02-14 | 2009-08-27 | Mitsui Eng & Shipbuild Co Ltd | 原子層成長装置 |
JP2013161960A (ja) * | 2012-02-06 | 2013-08-19 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置 |
-
2012
- 2012-03-16 JP JP2012060164A patent/JP5547763B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11329787A (ja) * | 1998-05-20 | 1999-11-30 | Mitsubishi Electric Corp | プラズマ発生用高周波ソースシステムおよび当該システムを含むプラズマ発生装置 |
JP2009191311A (ja) * | 2008-02-14 | 2009-08-27 | Mitsui Eng & Shipbuild Co Ltd | 原子層成長装置 |
JP2013161960A (ja) * | 2012-02-06 | 2013-08-19 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置 |
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US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
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US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
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US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
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US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
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US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
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US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11453946B2 (en) | 2019-06-06 | 2022-09-27 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
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US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
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US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
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USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
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US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
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US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
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US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
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US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
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US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
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USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
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