JPWO2009016739A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
Description
前記メモリトランジスタは、第1のゲート側壁絶縁膜と、当該第1のゲート側壁絶縁膜の外側に位置する第2のゲート側壁絶縁膜とを有し、
前記高電圧動作トランジスタは、前記第1のゲート側壁絶縁膜と同一組成の第3のゲート側壁絶縁膜と、当該第3のゲート側壁絶縁膜の外側に位置し、前記第2のゲート側壁絶縁膜と同一組成の第4のゲート側壁絶縁膜とを有し、
前記低電圧動作トランジスタは、前記第2及び第4のゲート側壁絶縁膜と同一組成第5のゲート側壁絶縁膜を有し、
前記低電圧動作トランジスタのトータルの側壁スペーサの幅は、前記高電圧動作トランジスタのトータルの側壁スペーサの幅よりも、前記第3のゲート側壁絶縁膜の膜厚分だけ短い。
(a)半導体基板上に形成されたメモリトランジスタのゲート電極と高電圧動作トランジスタのゲート電極の側壁に、同時に第1の側壁絶縁膜を形成し、
(b)前記メモリトランジスタと高電圧動作トランジスタの第1の側壁絶縁膜上と、前記半導体基板上に形成された低電圧動作トランジスタのゲート電極の側壁に、第2の側壁絶縁膜を同時に形成する、
工程を含む。
2 トンネル絶縁膜
3 フローティングゲート電極
4 ONO膜(層間容量膜)
5 コントロールゲート電極
10M フラッシュメモリ第1サイドゥオール(第1のゲート側壁絶縁膜)
10H HVTr第1サイドウォール(第3のゲート側壁絶縁膜)
10a、10a'、10a" 酸化膜(熱酸化膜)
10b 窒化膜(熱窒化膜)
12 HVTrゲート絶縁膜
15 HVTrゲート電極
20M フラッシュメモリ第2サイドウォール(第2のゲート側壁絶縁膜)
20H HVTr第2サイドウォール(第4のゲート側壁絶縁膜)
20L LVTr第2サイドウォール(第5のゲート側壁絶縁膜)
20a 酸化膜(TEOS)
20b 窒化膜(低温熱窒化膜)
22 LVTrゲート絶縁膜
25 LVTrゲート電極
33 HVTrソース・ドレインエクステンション
34 HVTrソース・ドレイン不純物拡散層
37 LVTrソース・ドレインエクステンション
38 LVTrソース・ドレイン不純物拡散層
40 半導体装置
45 フラッシュゲート(積層ゲート電極)
Flash フラッシュメモリトランジスタ(不揮発メモリトランジスタ)
HVTr 高耐圧(高電圧動作)トランジスタ
LVTr 低耐圧(低電圧動作)トランジスタ
以上、本発明を特定の実施形態に基づいて説明したが、本発明はそれらの例に限定されず、当業者にとって自明な変形、代替、変更を含むものとする。たとえば、第1サイドウォール10M、10Hのサイドウォール幅は、75nm〜85nmの範囲で適切に設定することができる。第2サイドウォール20M、20H、20Lのサイドウォール幅は、85nm〜95nmの範囲で適切に設定することができる。いずれの場合もHVTrとLVTrのトータルのサイドウォール幅(スペーサ幅)は、第1サイドウォール10Hの幅だけ異なる。
Claims (13)
- 同一基板上に、メモリトランジスタと、高電圧動作トランジスタと、低電圧動作トランジスタを有する半導体装置において、
前記メモリトランジスタは、第1のゲート側壁絶縁膜と、当該第1のゲート側壁絶縁膜の外側に位置する第2のゲート側壁絶縁膜とを有し、
前記高電圧動作トランジスタは、前記第1のゲート側壁絶縁膜と同一組成の第3のゲート側壁絶縁膜と、当該第3のゲート側壁絶縁膜の外側に位置し、前記第2のゲート側壁絶縁膜と同一組成の第4のゲート側壁絶縁膜とを有し、
前記低電圧動作トランジスタは、前記第2及び第4のゲート側壁絶縁膜と同一組成の第5のゲート側壁絶縁膜を有し、
前記低電圧動作トランジスタのトータルの側壁スペーサの幅は、前記高電圧動作トランジスタのトータルの側壁スペーサの幅よりも、前記第3のゲート側壁絶縁膜の膜厚分だけ狭い、
ことを特徴とする半導体装置。 - 前記第1及び第3のゲート側壁絶縁膜は、前記第2、第4及び第5のゲート側壁絶縁膜よりも緻密であることを特徴とする請求項1に記載の半導体装置。
- 前記第1及び第3のゲート側壁絶縁膜の各々は、熱酸化膜と熱窒化膜の組み合わせで構成されることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第2、第4及び第5のゲート側壁絶縁膜の各々は、TEOS膜と窒化膜の組み合わせで構成されることを特徴とする請求項1又は2に記載の半導体装置。
- 半導体基板上に形成されたメモリトランジスタのゲート電極と高電圧動作トランジスタのゲート電極の側壁に、同時に第1の側壁絶縁膜を形成し、
前記メモリトランジスタと前記高電圧動作トランジスタの前記第1の側壁絶縁膜上と、前記半導体基板上に形成された低電圧動作トランジスタのゲート電極の側壁に、第2の側壁絶縁膜を同時に形成する、
工程を含むことを特徴とする半導体装置の製造方法。 - 前記第1の側壁絶縁膜の成膜温度は、前記第2の側壁絶縁膜の成膜温度よりも高いことを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記第1の側壁絶縁膜の形成工程は、第1の絶縁膜を900℃以上の温度で成膜し、前記第1の絶縁膜をエッチバックする工程を含むことを特徴とする請求項5又は6に記載の半導体装置の製造方法。
- 前記第2の側壁絶縁膜の形成工程は、第2の絶縁膜を650℃以下の温度で成膜し、前記第2の絶縁膜をエッチバックする工程を含むことを特徴とする請求項5又は6に記載の半導体装置の製造方法。
- 前記第1の絶縁膜の成膜工程は、熱酸化膜と熱窒化膜を順次成膜する工程を含むことを特徴とする請求項5又は6に記載の半導体装置の製造方法。
- 前記第2の絶縁膜の成膜工程は、TEOS膜と低温窒化膜を順次成膜する工程を含むことを特徴とする請求項5又は6に記載の半導体装置の製造方法。
- 前記第1の側壁絶縁膜の形成後に、前記低電圧動作トランジスタのゲート電極を形成する工程、
をさらに含むことを特徴とする請求項5に記載の半導体装置の製造方法。 - 前記第1の側壁絶縁膜の形成前に、前記高電圧動作トランジスタのゲート電極をマスクとして、第1のイオン注入を行う工程と、
前記第2の側壁絶縁膜の形成後に、前記高電圧動作トランジスタの基板領域に、第2のイオン注入を行う工程、
をさらに含むことを特徴とする請求項7に記載の半導体装置の製造方法。 - 前記第1のイオン注入のドーズ量は、前記第2のイオン注入のドーズ量よりも大きいことを特徴とする請求項12に記載の半導体装置の製造方法。
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US8767482B2 (en) * | 2011-08-18 | 2014-07-01 | Micron Technology, Inc. | Apparatuses, devices and methods for sensing a snapback event in a circuit |
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US10242996B2 (en) * | 2017-07-19 | 2019-03-26 | Cypress Semiconductor Corporation | Method of forming high-voltage transistor with thin gate poly |
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