JPWO2007046254A1 - Mosfetおよびmosfetの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims abstract description 159
- 238000000034 method Methods 0.000 claims description 64
- 238000005468 ion implantation Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 34
- 150000002500 ions Chemical class 0.000 claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
- 230000015556 catabolic process Effects 0.000 abstract description 19
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 abstract 1
- 230000008569 process Effects 0.000 description 46
- 239000007789 gas Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005223 charged particle activation analysis Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
しかし、特許文献1に開示されている構造は、蓄積モードであるので、ノーマリOFF化がされ難い(つまり、ゲート電極に電圧が印加されていないときでも、チャネルに電流が流れてしまう)、という問題が生じる。
上記の目的を達成するために、本発明に係る請求項1に記載のMOSFETは、基板の主面上に形成されており、第一の導電型を有しており、炭化珪素から成るドリフト層と、前記ドリフト層の表面内に形成されており、第二の導電型を有するベース領域と、前記ベース領域の表面内に形成されており、第一の導電型を有するソース領域とを、備えており、前記ドリフト層は、表面から第一の所定の深さまでの領域である第一の領域と、前記第一の所定の深さより深い領域に形成されている第二の領域とを、備えており、前記第一の領域の不純物濃度は、前記第二の領域の不純物濃度よりも低い。
本発明の請求項1に記載のMOSFETは、基板の主面上に形成されており、第一の導電型を有しており、炭化珪素から成るドリフト層と、前記ドリフト層の表面内に形成されており、第二の導電型を有するベース領域と、前記ベース領域の表面内に形成されており、第一の導電型を有するソース領域とを、備えており、前記ドリフト層は、表面から第一の所定の深さまでの領域である第一の領域と、前記第一の所定の深さより深い領域に形成されている第二の領域とを、備えており、前記第一の領域の不純物濃度は、前記第二の領域の不純物濃度よりも低い。したがって、高耐圧で低オン損失(高チャネル移動度および低ゲート閾値電圧)なMOSFETを提供することができる。また、当該MOSFETは、いわゆる蓄積モード構造では無い。よって、ノーマリOFF化が容易に実現される。
図1は、本実施の形態に係わる、炭化珪素から成る縦型MOSFETの構造を示す、断面図である。
実施の形態1では、第一の領域2a、第二の領域2bを有するドリフト層2の形成後に、第三の領域3a、第四の領域3bを有するベース領域3を形成する場合について言及した。しかし、図20に示すような手順を採用しても良い。
Claims (14)
- 基板(1)の主面上に形成されており、第一の導電型を有しており、炭化珪素から成るドリフト層(2)と、
前記ドリフト層の表面内に形成されており、第二の導電型を有するベース領域(3)と、
前記ベース領域の表面内に形成されており、第一の導電型を有するソース領域(4)とを、備えており、
前記ドリフト層は、
表面から第一の所定の深さまでの領域である第一の領域(2a)と、前記第一の所定の深さより深い領域に形成されている第二の領域(2b)とを、備えており、
前記第一の領域の不純物濃度は、前記第二の領域の不純物濃度よりも低い、
ことを特徴とするMOSFET。 - 前記第一の領域の不純物濃度は、
5×1012/cm3以上、5×1016/cm3以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記第二の領域の不純物濃度は、
1×1015/cm3以上、1×1017/cm3以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記第一の領域の厚さは、
1μm以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記ベース領域は、
表面から第二の所定の深さまでの領域である第三の領域(3a)と、前記第二の所定の深さより深い領域に形成されている第四の領域(3b)とを、備えており、
前記第三の領域の不純物濃度は、前記第四の領域の不純物濃度よりも低い、
ことを特徴とする請求項1に記載のMOSFET。 - 前記ドリフト層の前記第一の領域の深さは、
前記ベース領域の前記第三の領域の深さより深い、
ことを特徴とする請求項5に記載のMOSFET。 - 前記第三の領域の不純物濃度は、
5×1013/cm3以上、1×1017/cm3以下である、
ことを特徴とする請求項5に記載のMOSFET。 - 前記第四の領域の不純物濃度は、
1×1017/cm3以上である、
ことを特徴とする請求項5に記載のMOSFET。 - 前記第三の領域の厚さは、
0.2μm以下である、
ことを特徴とする請求項5に記載のMOSFET。 - 前記第三の領域の厚さは、
前記ベース領域と前記ドリフト層とのpn接合から伸びる空乏層により、前記ベース領域がパンチスルーを起こさない厚さである、
ことを特徴とする請求項5に記載のMOSFET。 - 前記ドリフト層の表面の面方位は、
(11−20)面である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記ドリフト層の表面の面方位は、
面方位が(000−1)面である、
ことを特徴とする請求項1に記載のMOSFET。 - (A)半導体基板(1)上に、第一の導電型で、比較的不純物濃度の高いドリフト層(2b)を成長させる工程と、
(B)前記比較的不純物濃度の高いドリフト層に対して、第二の導電型である不純物イオンを、比較的高濃度で注入し、比較的不純物濃度の高いベース領域(3b)を形成する工程と、
(C)前記比較的不純物濃度の高いドリフト層上に、第一の導電型で、比較的不純物濃度の低いドリフト層(2a)を成長させる工程と、
(D)前記比較的不純物濃度の低いドリフト層に対して、第二の導電型である不純物イオンを、比較的低濃度で注入し、比較的不純物濃度の低いベース領域(3a)を形成する工程とを、備えており、
前記工程(A)と前記工程(C)とは、別々の反応炉内で行われる、
ことを特徴とするMOSFETの製造方法。 - 前記工程(B)および前記工程(D)の、各当該工程中において、
イオン注入量は、各々、略一定である、
ことを特徴とする請求項13に記載のMOSFETの製造方法。
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JP2007540922A JP5082853B2 (ja) | 2005-10-19 | 2006-10-06 | Mosfet |
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JP2005303949 | 2005-10-19 | ||
JP2005303949 | 2005-10-19 | ||
PCT/JP2006/320069 WO2007046254A1 (ja) | 2005-10-19 | 2006-10-06 | Mosfetおよびmosfetの製造方法 |
JP2007540922A JP5082853B2 (ja) | 2005-10-19 | 2006-10-06 | Mosfet |
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JP2007540922A Active JP5082853B2 (ja) | 2005-10-19 | 2006-10-06 | Mosfet |
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JP (1) | JP5082853B2 (ja) |
KR (1) | KR100965968B1 (ja) |
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US8222649B2 (en) * | 2006-02-07 | 2012-07-17 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
US8536582B2 (en) * | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
JPWO2010110246A1 (ja) | 2009-03-25 | 2012-09-27 | ローム株式会社 | 半導体装置 |
JP5721351B2 (ja) | 2009-07-21 | 2015-05-20 | ローム株式会社 | 半導体装置 |
JP5736683B2 (ja) * | 2010-07-30 | 2015-06-17 | 三菱電機株式会社 | 電力用半導体素子 |
JP5569376B2 (ja) * | 2010-12-07 | 2014-08-13 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2012160584A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Ind Ltd | 半導体装置 |
CN103426924A (zh) * | 2012-05-14 | 2013-12-04 | 无锡华润上华半导体有限公司 | 沟槽型功率mosfet及其制备方法 |
WO2015015672A1 (ja) * | 2013-07-31 | 2015-02-05 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
DE112018001768T5 (de) * | 2017-03-28 | 2019-12-19 | Mitsubishi Electric Corporation | Siliciumcarbid-substrat, verfahren zum herstellen eines siliciumcarbid-substrats und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung |
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US4684413A (en) * | 1985-10-07 | 1987-08-04 | Rca Corporation | Method for increasing the switching speed of a semiconductor device by neutron irradiation |
JPH0349266A (ja) * | 1989-07-18 | 1991-03-04 | Fuji Electric Co Ltd | Mos型半導体装置 |
JPH04256368A (ja) * | 1991-02-08 | 1992-09-11 | Nec Yamagata Ltd | 半導体装置 |
JP3471823B2 (ja) * | 1992-01-16 | 2003-12-02 | 富士電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
DE19809554B4 (de) * | 1997-03-05 | 2008-04-03 | Denso Corp., Kariya | Siliziumkarbidhalbleitervorrichtung |
JP4123636B2 (ja) * | 1998-06-22 | 2008-07-23 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP3460585B2 (ja) * | 1998-07-07 | 2003-10-27 | 富士電機株式会社 | 炭化けい素mos半導体素子の製造方法 |
JP4595139B2 (ja) * | 1998-10-29 | 2010-12-08 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
EP1684359A3 (en) | 2000-05-31 | 2006-10-25 | Matsushita Electrical Industrial Co., Ltd | Misfet |
JP4797280B2 (ja) * | 2001-05-29 | 2011-10-19 | パナソニック電工株式会社 | 半導体装置 |
US6620697B1 (en) | 2001-09-24 | 2003-09-16 | Koninklijke Philips Electronics N.V. | Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same |
JP2003309262A (ja) | 2002-04-17 | 2003-10-31 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP4188637B2 (ja) * | 2002-08-05 | 2008-11-26 | 独立行政法人産業技術総合研究所 | 半導体装置 |
CN1532943B (zh) | 2003-03-18 | 2011-11-23 | 松下电器产业株式会社 | 碳化硅半导体器件及其制造方法 |
JP4304332B2 (ja) | 2003-10-03 | 2009-07-29 | 独立行政法人産業技術総合研究所 | 炭化ケイ素半導体装置 |
JP4620368B2 (ja) * | 2004-03-08 | 2011-01-26 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2009094203A (ja) * | 2007-10-05 | 2009-04-30 | Denso Corp | 炭化珪素半導体装置 |
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DE112006002876T5 (de) | 2008-10-02 |
KR100965968B1 (ko) | 2010-06-24 |
DE112006002876B4 (de) | 2014-07-24 |
JP5082853B2 (ja) | 2012-11-28 |
US7928469B2 (en) | 2011-04-19 |
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KR20080047477A (ko) | 2008-05-28 |
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