JPWO2005109525A1 - カルコパイライト型薄膜太陽電池の製造方法 - Google Patents
カルコパイライト型薄膜太陽電池の製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052951 chalcopyrite Inorganic materials 0.000 title claims abstract description 15
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 230000008569 process Effects 0.000 claims abstract description 41
- 239000002243 precursor Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 29
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 229910000807 Ga alloy Inorganic materials 0.000 claims abstract description 19
- 235000010339 sodium tetraborate Nutrition 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 229910021538 borax Inorganic materials 0.000 claims abstract description 14
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004328 sodium tetraborate Substances 0.000 claims abstract description 14
- 150000001339 alkali metal compounds Chemical class 0.000 claims abstract description 13
- 229910052979 sodium sulfide Inorganic materials 0.000 claims abstract description 6
- BPLYVSYSBPLDOA-GYOJGHLZSA-N n-[(2r,3r)-1,3-dihydroxyoctadecan-2-yl]tetracosanamide Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(=O)N[C@H](CO)[C@H](O)CCCCCCCCCCCCCCC BPLYVSYSBPLDOA-GYOJGHLZSA-N 0.000 claims abstract description 4
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 28
- 229910000058 selane Inorganic materials 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 48
- 239000003513 alkali Substances 0.000 abstract description 45
- 239000010408 film Substances 0.000 abstract description 29
- 238000004544 sputter deposition Methods 0.000 abstract description 19
- 239000007864 aqueous solution Substances 0.000 abstract description 13
- -1 chalcopyrite compound Chemical class 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 178
- 238000006243 chemical reaction Methods 0.000 description 22
- 239000011521 glass Substances 0.000 description 20
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 19
- 239000005361 soda-lime glass Substances 0.000 description 15
- 239000011669 selenium Substances 0.000 description 13
- 239000011734 sodium Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000000576 coating method Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229940079101 sodium sulfide Drugs 0.000 description 4
- ZGHLCBJZQLNUAZ-UHFFFAOYSA-N sodium sulfide nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Na+].[Na+].[S-2] ZGHLCBJZQLNUAZ-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- VPQBLCVGUWPDHV-UHFFFAOYSA-N sodium selenide Chemical compound [Na+].[Na+].[Se-2] VPQBLCVGUWPDHV-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 101100396546 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) tif-6 gene Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- ZEMWIYASLJTEHQ-UHFFFAOYSA-J aluminum;sodium;disulfate;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Na+].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ZEMWIYASLJTEHQ-UHFFFAOYSA-J 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 150000003112 potassium compounds Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000004436 sodium atom Chemical group 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 229940048181 sodium sulfide nonahydrate Drugs 0.000 description 1
- WMDLZMCDBSJMTM-UHFFFAOYSA-M sodium;sulfanide;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Na+].[SH-] WMDLZMCDBSJMTM-UHFFFAOYSA-M 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- ZZIZZTHXZRDOFM-XFULWGLBSA-N tamsulosin hydrochloride Chemical compound [H+].[Cl-].CCOC1=CC=CC=C1OCCN[C@H](C)CC1=CC=C(OC)C(S(N)(=O)=O)=C1 ZZIZZTHXZRDOFM-XFULWGLBSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
図3を参照して特許文献4の光吸収層形成工程を説明すると、まず、SLG基板上に、Mo電極層をスパッタリング法により形成する。次いで、Mo電極層上に浸漬法によりアルカリ層を形成する。アルカリ層は、例えば硫化ナトリウムを純水に溶解した0.01〜1重量%水溶液にMo電極層付きの基板を浸漬してスピンドライ法等で乾燥した後、大気中で60分間のべーク処理を行い、残留水分を調整することにより形成される。その後、アルカリ層上に、Inターゲット及びCu-Ga合金ターゲットをこの順で用いたスパッタ成膜を行い、In金属層とCu−Ga合金層とからなる積層プリカーサを形成する。更に、プリカーサ層付きの基板に対して所定温度のSe雰囲気中でセレン化処理を行って、CIGS光吸収層を形成する。その際、アルカリ層は、直上に隣接する光吸収層に拡散して消滅する。
図4は、仕入室31と第1スパッタ成膜室32と第2スパッタ成膜室33と取出室34とを、それぞれ仕切弁35、36、37を介して連通させたインライン式スパッタ装置38の概略図である。スパッタ装置38の各室31、32、33、34には、それぞれ図外の真空排気機構が接続している。
ナトリウム化合物:Na2B4O7・10H2O、Na2S・9H2O、Na2SeO3・5H2O、Na2TeO3・5H2O、Na2SO3・7H2O、AlNa(SO4)2・12H2O、NaCl。
カリウム化合物:K2TeO3・3H2O、K2Al2O4・3H2O、AlK(SO4)2・12H2O、KOH、KF、K2SeO3、K2TeO3、KCl、K2[CuCl4(H2O)2]、KBr、KBH4、K2S2O3・nH2O、K2S2O5、K2S2O7、KF・2H2O、KF・HF、K2TiF6、K2B4O7・4H2O、KHSO4、KI。
リチウム化合物:Li2B4O7・3H2O、Li2B4O7、LiCl、LiBr・H2O、LiF、Li2SO4・H2O。
更に、基板1cを搭載した石英ボート42は、石英製プロセスチューブ46により囲繞されている。プロセスチューブ46により囲繞される密閉空間は、図外の真空排気機構により圧力条件が可変であり、この密閉空間内部にセレン化水素ガスを導入するガス導入管47が貫入されている。ガス導入管47の周壁には多数のノズル孔48が穿設され、ノズル孔48からセレン化水素ガスがプロセスチューブ46に流入する。また、プロセスチューブ46内でセレン化水素ガスの均一な流通が得られるように、ノズル孔48の径は1〜2mmの範囲にある。
本実施例では、真空引き時間t2 を1分としたが、高温の真空状態に保持することにより、処理中のプリカーサからIn等の成分が蒸発してしまうため、高性能な真空装置を用いて時間t2を短縮してもよい。
図4に示すインライン式スパッタ成膜装置を用いて、SLG基板上にIn金属層及びCu−Ga合金層からなる積層プリカーサを形成した。次いで、四ホウ酸ナトリウム10水和物を純水に溶解して得られた0.8重量%水溶液に、プリカーサが積層されたSLG基板を浸漬した後、スピンドライにより付着した水溶液を乾燥した。その後、図5に示す熱処理装置において図6の温度プロファイルに従ってセレン化処理を行った。
四ホウ酸ナトリウムの濃度をそれぞれ1.6重量%及び2.4重量%に代えた以外は、実施例1と同様の条件で薄膜太陽電池を製造した。これらの薄膜太陽電池は、安定した膜内部構造を有し、班状しみのない外観を呈していた。そして、同じ条件で製造した8枚の薄膜太陽電池につき、それぞれ光電変換効率を測定したところ、図8に示すように、光電変換効率は10.66%及び11.05%であった。
図3の工程図に示すNa2S層に代えて、実施例1の四ホウ酸ナトリウムの0.8重量%水溶液を用いてアルカリ層を形成した。即ち、Mo電極層上に四ホウ酸ナトリウム水溶液を浸漬法により付着させ、スピンドライした後、大気中で60分間のべーク処理を行い、残留水分を調整して四ホウ酸ナトリウムからなるアルカリ層を形成した。その後、アルカリ層上に、Inターゲット及びCu−Ga合金ターゲットをこの順で用いたスパッタ成膜を行い、In金属層とCu−Ga合金層とからなる積層プリカーサを形成した。更に、プリカーサ層が形成された基板に対して所定温度のSe雰囲気中でセレン化処理を行って、CIGS光吸収層を形成した。
基板を白板ガラス等の低アルカリガラスに変更した以外は、実施例1と同様の条件で薄膜太陽電池製品を製造した。このとき、アルカリ層を形成する四ホウ酸ナトリウムの濃度を種々変更したところ、その濃度が3.2〜4.3重量%であるときに、高い光電変換効率を示した。
Claims (3)
- 基板上に形成された裏面電極層上に、In、Cu及びGa金属元素を含有成分としたプリカーサを形成する第1工程と、該プリカーサにアルカリ金属含有液を付着する第2工程と、該第1及び第2の両工程を経た基板に対して、セレン化水素ガス雰囲気中で熱処理を行うセレン化工程と、光透過性の導電層を成膜する透明電極形成工程とからなることを特徴とするカルコパイライト型薄膜太陽電池の製造方法。
- 前記アルカリ金属含有液の溶質として、四ホウ酸ナトリウム、硫化ナトリウム及び硫酸ナトリウムアルミニウムから選ばれるアルカリ金属化合物の少なくとも1種を用いることを特徴とする請求項1記載のカルコパイライト型薄膜太陽電池の製造方法。
- 前記第1工程は、In金属層を形成する第1スパッタ成膜工程と、Cu−Ga合金層を形成する第2スパッタ成膜工程とからなることを特徴とする請求項1又は2に記載のカルコパイライト型薄膜太陽電池の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2004140703 | 2004-05-11 | ||
JP2004140703 | 2004-05-11 | ||
PCT/JP2005/007098 WO2005109525A1 (ja) | 2004-05-11 | 2005-04-12 | カルコパイライト型薄膜太陽電池の製造方法 |
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JPWO2005109525A1 true JPWO2005109525A1 (ja) | 2008-03-21 |
JP4680183B2 JP4680183B2 (ja) | 2011-05-11 |
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US (1) | US7871502B2 (ja) |
EP (1) | EP1746662B1 (ja) |
JP (1) | JP4680183B2 (ja) |
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JP4680183B2 (ja) | 2011-05-11 |
CN1950953A (zh) | 2007-04-18 |
EP1746662A4 (en) | 2011-11-02 |
WO2005109525A1 (ja) | 2005-11-17 |
US7871502B2 (en) | 2011-01-18 |
EP1746662A1 (en) | 2007-01-24 |
US20080283389A1 (en) | 2008-11-20 |
EP1746662B1 (en) | 2017-01-25 |
CN100463230C (zh) | 2009-02-18 |
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