JPWO2005091387A1 - 発光装置および照明装置 - Google Patents
発光装置および照明装置 Download PDFInfo
- Publication number
- JPWO2005091387A1 JPWO2005091387A1 JP2006511302A JP2006511302A JPWO2005091387A1 JP WO2005091387 A1 JPWO2005091387 A1 JP WO2005091387A1 JP 2006511302 A JP2006511302 A JP 2006511302A JP 2006511302 A JP2006511302 A JP 2006511302A JP WO2005091387 A1 JPWO2005091387 A1 JP WO2005091387A1
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- light
- light emitting
- emitting device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 286
- 229920005989 resin Polymers 0.000 claims abstract description 94
- 239000011347 resin Substances 0.000 claims abstract description 94
- 238000009792 diffusion process Methods 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims description 121
- 239000000758 substrate Substances 0.000 claims description 47
- 239000011163 secondary particle Substances 0.000 claims description 34
- 239000003795 chemical substances by application Substances 0.000 claims description 30
- 238000009826 distribution Methods 0.000 claims description 15
- 238000011049 filling Methods 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 229920002050 silicone resin Polymers 0.000 description 16
- 230000000694 effects Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 239000011164 primary particle Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920001187 thermosetting polymer Polymers 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000004062 sedimentation Methods 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007873 sieving Methods 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229920006351 engineering plastic Polymers 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000037396 body weight Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
12 基体
18 発光素子としての発光ダイオード素子
22 拡散層
23 蛍光体層
24 接合面
31 発光装置
32 基体
37 発光素子としての発光ダイオード素子
41 蛍光体
42 蛍光体層
51 照明装置
61 発光素子としての発光ダイオード素子
74 拡散層
75 蛍光体層としての可視光変換層
76 レンズ
まず、各陰極側と陽極側の回路パターン16a,16b間に、外部から所定の直流電圧が印加されると、各発光ダイオード素子18が青色発光する。この青色発光は、拡散層22により多方向へ拡散してから蛍光体層23内に入射し、ここで黄色蛍光体を多方向から励起して黄色に発光させる。そして、発光ダイオード素子18からの青色光と黄色蛍光体からの黄色光とが混色し、白色光になって収容部20から外部へ放射される。
サンプルNo.1 蛍光体のみ
蛍光体層
樹脂(JCR6140) 89mass%
黄色蛍光体 10mass%
赤色蛍光体 1mass%
サンプルNo.2 拡散層(5mass%)+蛍光体層の2層構造
拡散層
樹脂(JCR6140) 95mass%
拡散剤(Al2O3) 5mass%
蛍光体層
樹脂(JCR6140) 78mass%
黄色蛍光体 20mass%
赤色蛍光体 2mass%
サンプルNo.3 拡散層(10mass%)+蛍光体層の2層構造
拡散層
樹脂(JCR6140) 90mass%
拡散剤(Al2O3) 10mass%
蛍光体層
樹脂(JCR6140) 78mass%
黄色蛍光体 20mass%
赤色蛍光体 2mass%
サンプルNo.4 拡散層(15mass%)+蛍光体層の2層構造
拡散層
樹脂(JCR6140) 85mass%
拡散剤(Al2O3) 15mass%
蛍光体層
樹脂(JCR6140) 78mass%
黄色蛍光体 20mass%
赤色蛍光体 2mass%
サンプルNo.5 拡散剤混合蛍光体
樹脂(JCR6140) 80mass%
拡散剤(Al2O3) 20mass%
樹脂(JCR6140) 78mass%
黄色蛍光体 20mass%
赤色蛍光体 2mass%
サンプルNo.1のように拡散層22を削除して蛍光体層23のみを有する1層構造の場合と、サンプルNo.5のように同じく拡散層22を削除して蛍光体層23に拡散剤を添加した1層構造の場合とは、収容部20から外部に放射される白色光は、その周縁部に黄色光が分布し、色むらの低減効果は得られなかった。
Claims (8)
- 基体に配設される発光素子と;
発光素子を被覆する拡散層と;
拡散層の上層に配設する蛍光体層と;
を具備していることを特徴とする発光装置。 - 拡散層は、拡散剤を有し、拡散剤の添加量は3ないし5質量%である
ことを特徴とする請求項1記載の発光装置。 - 拡散層と蛍光体層との接合面は、発光素子側に凹む凹弧面に形成されている
ことを特徴とする請求項1または2記載の発光装置。 - 基体に配設される発光素子と;
発光素子から放射された光により励起されて可視光を発光する蛍光体であって、蛍光体の小粒子が二次粒子化し、かつ粒径が5〜10μmの範囲の蛍光体粒子を有する蛍光体を含む蛍光体層と;
を具備していることを特徴とする発光装置。 - 基体に配設される発光素子と;
発光素子から放射された光により励起されて可視光を発光する蛍光体であって、ピークが2つ以上存在する粒度分布を有する蛍光体粒子を備えた蛍光体を含む蛍光体層と;
を具備していることを特徴とする発光装置。 - 蛍光体層は、0.1〜10Pa・sの範囲の粘度を有する樹脂を充填して固化した
ことを特徴とする請求項4または5記載の発光装置。 - 発光素子は、青色光を放射する発光ダイオード素子を有し、
蛍光体は、発光ダイオード素子から放射された青色光により励起されて黄色光ないし橙色光を発光する黄色ないし橙色発光蛍光体を有する
ことを特徴とする請求項4ないし6いずれか一記載の発光装置。 - 請求項1ないし7のいずれか一記載の発光装置と;
基体上に配設されるレンズと;
を具備していることを特徴とする照明装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006511302A JP5083503B2 (ja) | 2004-03-24 | 2005-03-23 | 発光装置および照明装置 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004086667 | 2004-03-24 | ||
JP2004086667 | 2004-03-24 | ||
JP2004248203 | 2004-08-27 | ||
JP2004248203 | 2004-08-27 | ||
JP2005020984 | 2005-01-28 | ||
JP2005020984 | 2005-01-28 | ||
PCT/JP2005/005233 WO2005091387A1 (ja) | 2004-03-24 | 2005-03-23 | 発光装置および照明装置 |
JP2006511302A JP5083503B2 (ja) | 2004-03-24 | 2005-03-23 | 発光装置および照明装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005091387A1 true JPWO2005091387A1 (ja) | 2008-02-07 |
JP5083503B2 JP5083503B2 (ja) | 2012-11-28 |
Family
ID=34993988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006511302A Expired - Fee Related JP5083503B2 (ja) | 2004-03-24 | 2005-03-23 | 発光装置および照明装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080191620A1 (ja) |
EP (1) | EP1737050A4 (ja) |
JP (1) | JP5083503B2 (ja) |
TW (1) | TWI286393B (ja) |
WO (1) | WO2005091387A1 (ja) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311471A (ja) * | 2007-06-15 | 2008-12-25 | Toyoda Gosei Co Ltd | 発光装置 |
JP4744178B2 (ja) * | 2005-04-08 | 2011-08-10 | シャープ株式会社 | 発光ダイオード |
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
JP4890152B2 (ja) * | 2005-11-08 | 2012-03-07 | シャープ株式会社 | 発光装置 |
KR100665262B1 (ko) * | 2005-10-20 | 2007-01-09 | 삼성전기주식회사 | 발광다이오드 패키지 |
JP2007208061A (ja) * | 2006-02-02 | 2007-08-16 | Sharp Corp | 半導体発光素子,その製造方法,半導体発光素子アセンブリ |
EP1843400A1 (en) * | 2006-03-16 | 2007-10-10 | Centro Ricerche Plast-Optica S.r.l. | Light emission device and corresponding manufacturing process |
JP2007294867A (ja) * | 2006-03-28 | 2007-11-08 | Toshiba Lighting & Technology Corp | 発光装置 |
EP1850399A1 (en) * | 2006-04-25 | 2007-10-31 | ILED Photoelectronics Inc. | Sealing structure for a white light emitting diode |
JP5431636B2 (ja) * | 2006-07-14 | 2014-03-05 | 株式会社小糸製作所 | 車両用標識灯 |
DE102006048592A1 (de) * | 2006-10-13 | 2008-04-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Moduls |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
JP4952235B2 (ja) * | 2006-12-22 | 2012-06-13 | 日亜化学工業株式会社 | 発光装置及びそれを用いたバックライト |
JP4986282B2 (ja) * | 2007-01-10 | 2012-07-25 | 東芝ライテック株式会社 | 発光装置 |
JP5334088B2 (ja) * | 2007-01-15 | 2013-11-06 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体発光装置 |
US8604506B2 (en) * | 2007-02-22 | 2013-12-10 | Sharp Kabushiki Kaisha | Surface mounting type light emitting diode and method for manufacturing the same |
US8421088B2 (en) * | 2007-02-22 | 2013-04-16 | Sharp Kabushiki Kaisha | Surface mounting type light emitting diode |
TWI326923B (en) * | 2007-03-07 | 2010-07-01 | Lite On Technology Corp | White light emitting diode |
US9273830B2 (en) | 2007-06-14 | 2016-03-01 | Cree, Inc. | Light source with near field mixing |
CN101958391B (zh) | 2007-08-03 | 2013-06-26 | 松下电器产业株式会社 | 发光装置 |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
WO2009107535A1 (ja) * | 2008-02-25 | 2009-09-03 | 株式会社東芝 | 白色ledランプ、バックライト、発光装置、表示装置および照明装置 |
US9287469B2 (en) * | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
CN101577298A (zh) * | 2008-05-07 | 2009-11-11 | 富准精密工业(深圳)有限公司 | 发光二极管及其封装方法 |
JP5284006B2 (ja) * | 2008-08-25 | 2013-09-11 | シチズン電子株式会社 | 発光装置 |
JP5440064B2 (ja) | 2008-10-21 | 2014-03-12 | 東芝ライテック株式会社 | 照明装置 |
JP5327601B2 (ja) | 2008-12-12 | 2013-10-30 | 東芝ライテック株式会社 | 発光モジュールおよび照明装置 |
TWI426206B (zh) | 2008-12-25 | 2014-02-11 | Au Optronics Corp | 發光二極體裝置 |
US8408724B2 (en) * | 2008-12-26 | 2013-04-02 | Toshiba Lighting & Technology Corporation | Light source module and lighting apparatus |
JP5343831B2 (ja) * | 2009-04-16 | 2013-11-13 | 日亜化学工業株式会社 | 発光装置 |
US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
KR101034054B1 (ko) * | 2009-10-22 | 2011-05-12 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101075774B1 (ko) * | 2009-10-29 | 2011-10-26 | 삼성전기주식회사 | 발광소자 패키지 및 그 제조 방법 |
EP2526572B1 (en) * | 2010-01-19 | 2019-08-14 | LG Innotek Co., Ltd. | Package and manufacturing method of the same |
US8820950B2 (en) * | 2010-03-12 | 2014-09-02 | Toshiba Lighting & Technology Corporation | Light emitting device and illumination apparatus |
DE102010028246A1 (de) * | 2010-04-27 | 2011-10-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
JP2010171466A (ja) * | 2010-05-11 | 2010-08-05 | Toshiba Lighting & Technology Corp | 発光装置 |
JP2012023281A (ja) * | 2010-07-16 | 2012-02-02 | Nitto Denko Corp | 発光装置の製法 |
JP5486431B2 (ja) * | 2010-07-27 | 2014-05-07 | 日東電工株式会社 | 発光装置用部品、発光装置およびその製造方法 |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
US9075172B2 (en) * | 2010-09-20 | 2015-07-07 | Luxingtek, Ltd. | Light converting optical structure and lighting device utilizing the same |
KR101626412B1 (ko) * | 2010-12-24 | 2016-06-02 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
JP4870233B1 (ja) * | 2011-02-14 | 2012-02-08 | E&E Japan株式会社 | チップled |
US20120236529A1 (en) * | 2011-03-15 | 2012-09-20 | Avago Technologies Ecbu Ip(Singapore) Pte. Ltd. | Method And Apparatus For A Light Source |
US9041046B2 (en) | 2011-03-15 | 2015-05-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for a light source |
JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
DE102011100028A1 (de) * | 2011-04-29 | 2012-10-31 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
JP2013065726A (ja) * | 2011-09-16 | 2013-04-11 | Toshiba Corp | 半導体発光装置及びその製造方法 |
KR101817807B1 (ko) | 2011-09-20 | 2018-01-11 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 포함하는 조명시스템 |
US8851731B2 (en) * | 2011-10-24 | 2014-10-07 | Ningbo Baishi Electric Co., Ltd | Light-diffusion LED lamp |
JP5327356B2 (ja) * | 2012-05-14 | 2013-10-30 | 日亜化学工業株式会社 | 発光装置 |
JP2013084981A (ja) * | 2012-12-28 | 2013-05-09 | Nichia Chem Ind Ltd | 発光装置 |
US9353919B2 (en) * | 2013-02-01 | 2016-05-31 | Zhengming WU | White LED lamp secondary encapsulation structure capable of reducing blue-light hazards |
TW201505217A (zh) * | 2013-07-23 | 2015-02-01 | Lextar Electronics Corp | 發光二極體封裝結構與發光二極體燈泡 |
JP6136717B2 (ja) * | 2013-07-31 | 2017-05-31 | 日亜化学工業株式会社 | 発光素子、発光装置及び発光素子の製造方法 |
KR101714715B1 (ko) | 2014-03-11 | 2017-03-09 | 제일모직 주식회사 | 봉지재 조성물, 봉지재, 및 전자 소자 |
CN103915545B (zh) * | 2014-03-14 | 2017-05-17 | 苏州晶品新材料股份有限公司 | 半导体led白色光源 |
JP6493348B2 (ja) * | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
JP2019177369A (ja) * | 2018-03-30 | 2019-10-17 | 株式会社カネカ | 分散物の製造方法 |
CN109031779B (zh) * | 2018-07-25 | 2024-06-11 | 京东方科技集团股份有限公司 | 发光二极管基板、背光模组和显示装置 |
US10998375B2 (en) * | 2018-11-13 | 2021-05-04 | Samsung Electronics Co., Ltd. | Light emitting module and automotive illumination device including the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000156528A (ja) * | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
JP2000216434A (ja) * | 1996-12-27 | 2000-08-04 | Nichia Chem Ind Ltd | 発光ダイオ―ド及びその形成方法 |
JP2003142737A (ja) * | 2001-08-22 | 2003-05-16 | Nichia Chem Ind Ltd | 発光装置 |
JP2003324215A (ja) * | 2002-04-30 | 2003-11-14 | Toyoda Gosei Co Ltd | 発光ダイオードランプ |
JP2004031989A (ja) * | 1996-06-26 | 2004-01-29 | Siemens Ag | 被覆素子、半導体発光素子及び半導体発光素子の製造方法 |
JP2005353888A (ja) * | 2004-06-11 | 2005-12-22 | Stanley Electric Co Ltd | 発光素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3337000B2 (ja) * | 1999-06-07 | 2002-10-21 | サンケン電気株式会社 | 半導体発光装置 |
US6653765B1 (en) * | 2000-04-17 | 2003-11-25 | General Electric Company | Uniform angular light distribution from LEDs |
JP2002050800A (ja) * | 2000-05-24 | 2002-02-15 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
MY131962A (en) * | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
WO2003001612A1 (en) * | 2001-06-20 | 2003-01-03 | Nichia Corporation | Semiconductor device and its fabriction method |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
-
2005
- 2005-03-15 TW TW094107803A patent/TWI286393B/zh not_active IP Right Cessation
- 2005-03-23 US US10/599,296 patent/US20080191620A1/en not_active Abandoned
- 2005-03-23 EP EP05727174.4A patent/EP1737050A4/en not_active Withdrawn
- 2005-03-23 WO PCT/JP2005/005233 patent/WO2005091387A1/ja not_active Application Discontinuation
- 2005-03-23 JP JP2006511302A patent/JP5083503B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004031989A (ja) * | 1996-06-26 | 2004-01-29 | Siemens Ag | 被覆素子、半導体発光素子及び半導体発光素子の製造方法 |
JP2000216434A (ja) * | 1996-12-27 | 2000-08-04 | Nichia Chem Ind Ltd | 発光ダイオ―ド及びその形成方法 |
JP2000156528A (ja) * | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
JP2003142737A (ja) * | 2001-08-22 | 2003-05-16 | Nichia Chem Ind Ltd | 発光装置 |
JP2003324215A (ja) * | 2002-04-30 | 2003-11-14 | Toyoda Gosei Co Ltd | 発光ダイオードランプ |
JP2005353888A (ja) * | 2004-06-11 | 2005-12-22 | Stanley Electric Co Ltd | 発光素子 |
Also Published As
Publication number | Publication date |
---|---|
WO2005091387A1 (ja) | 2005-09-29 |
EP1737050A4 (en) | 2014-03-12 |
TW200536157A (en) | 2005-11-01 |
EP1737050A1 (en) | 2006-12-27 |
JP5083503B2 (ja) | 2012-11-28 |
US20080191620A1 (en) | 2008-08-14 |
TWI286393B (en) | 2007-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5083503B2 (ja) | 発光装置および照明装置 | |
CN107275301B (zh) | 发光装置 | |
JP4269709B2 (ja) | 発光装置およびその製造方法 | |
US8623255B2 (en) | Method for making a semiconductor device | |
JP6524904B2 (ja) | 発光装置 | |
JP4438492B2 (ja) | 半導体装置およびその製造方法 | |
US7663307B2 (en) | Light-emitting device | |
US9947840B2 (en) | Light emitting device and light source | |
JP2004363537A (ja) | 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置 | |
JP6769248B2 (ja) | 発光装置 | |
WO2016139954A1 (en) | Light emitting device | |
JP6387954B2 (ja) | 波長変換部材を用いた発光装置の製造方法 | |
WO2002089219A1 (fr) | Appareil electroluminescent | |
TW200807770A (en) | Light emitting diode module for line light source | |
JP2007116133A (ja) | 発光装置 | |
JP5082427B2 (ja) | 発光装置 | |
JP2006269778A (ja) | 光学装置 | |
JP2003115611A (ja) | 発光装置 | |
JP2007116117A (ja) | 発光装置 | |
JP2007294890A (ja) | 発光装置 | |
JP5899734B2 (ja) | 発光装置 | |
JP2007173733A (ja) | 発光装置 | |
JP5515693B2 (ja) | 発光装置 | |
JP2007116112A (ja) | 発光装置及びその製造方法 | |
TW202123507A (zh) | Led發光裝置及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110601 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110801 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111214 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120210 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120321 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120620 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120628 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120808 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120821 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150914 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |