JPWO2003079418A1 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JPWO2003079418A1
JPWO2003079418A1 JP2003577318A JP2003577318A JPWO2003079418A1 JP WO2003079418 A1 JPWO2003079418 A1 JP WO2003079418A1 JP 2003577318 A JP2003577318 A JP 2003577318A JP 2003577318 A JP2003577318 A JP 2003577318A JP WO2003079418 A1 JPWO2003079418 A1 JP WO2003079418A1
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JP
Japan
Prior art keywords
temperature
liquid
control system
exposure apparatus
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003577318A
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English (en)
Japanese (ja)
Inventor
潤一 小杉
潤一 小杉
谷口　哲夫
哲夫 谷口
直行 小林
直行 小林
長橋　良智
良智 長橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of JPWO2003079418A1 publication Critical patent/JPWO2003079418A1/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003577318A 2002-03-15 2003-03-13 露光装置及びデバイス製造方法 Withdrawn JPWO2003079418A1 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002072640 2002-03-15
JP2002072640 2002-03-15
JP2003002285 2003-01-08
JP2003002285 2003-01-08
PCT/JP2003/003003 WO2003079418A1 (fr) 2002-03-15 2003-03-13 Aligneur et procede de fabrication de dispositif

Publications (1)

Publication Number Publication Date
JPWO2003079418A1 true JPWO2003079418A1 (ja) 2005-07-21

Family

ID=28043731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003577318A Withdrawn JPWO2003079418A1 (ja) 2002-03-15 2003-03-13 露光装置及びデバイス製造方法

Country Status (5)

Country Link
JP (1) JPWO2003079418A1 (ko)
KR (1) KR20040102033A (ko)
AU (1) AU2003220867A1 (ko)
TW (1) TWI300953B (ko)
WO (1) WO2003079418A1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
EP3252533B1 (en) 2004-02-04 2019-04-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
JP2006235205A (ja) * 2005-02-24 2006-09-07 Fuji Photo Film Co Ltd 温度調整装置および温度調整方法
JP4858744B2 (ja) * 2005-03-24 2012-01-18 株式会社ニコン 露光装置
JP4872916B2 (ja) 2005-04-18 2012-02-08 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
WO2007066692A1 (ja) 2005-12-06 2007-06-14 Nikon Corporation 露光方法、露光装置、及びデバイス製造方法
US7746447B2 (en) 2005-12-22 2010-06-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and method of calibrating a lithographic apparatus
EP1843206B1 (en) * 2006-04-06 2012-09-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US7916267B2 (en) * 2006-08-29 2011-03-29 Asml Netherlands B.V. Lithographic apparatus, and motor cooling device
US9025126B2 (en) 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
NL2006809A (en) * 2010-06-23 2011-12-27 Asml Netherlands Bv Lithographic apparatus and lithographic apparatus cooling method.
WO2013072144A1 (en) * 2011-11-17 2013-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2016012175A1 (en) 2014-07-23 2016-01-28 Asml Netherlands B.V. Conditioning system and lithographic apparatus comprising a conditioning system
KR102395439B1 (ko) * 2020-05-18 2022-05-06 성균관대학교산학협력단 리프트 오프 공정 장치
JP2022020088A (ja) * 2020-06-26 2022-02-01 キヤノン株式会社 冷却装置、半導体製造装置および半導体製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916340A (en) * 1988-01-22 1990-04-10 Canon Kabushiki Kaisha Movement guiding mechanism
JP2821795B2 (ja) * 1990-05-17 1998-11-05 キヤノン株式会社 半導体露光装置
US5959732A (en) * 1996-04-10 1999-09-28 Nikon Corporation Stage apparatus and a stage control method
JPH1131647A (ja) * 1997-07-11 1999-02-02 Oki Electric Ind Co Ltd 投影露光装置
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
JP4432139B2 (ja) * 1999-01-25 2010-03-17 株式会社ニコン ステージ装置及び露光装置

Also Published As

Publication number Publication date
TW200305925A (en) 2003-11-01
WO2003079418A1 (fr) 2003-09-25
TWI300953B (en) 2008-09-11
AU2003220867A1 (en) 2003-09-29
KR20040102033A (ko) 2004-12-03

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