TW200305925A - Exposure device and device manufacturing process - Google Patents

Exposure device and device manufacturing process Download PDF

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Publication number
TW200305925A
TW200305925A TW092104004A TW92104004A TW200305925A TW 200305925 A TW200305925 A TW 200305925A TW 092104004 A TW092104004 A TW 092104004A TW 92104004 A TW92104004 A TW 92104004A TW 200305925 A TW200305925 A TW 200305925A
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Taiwan
Prior art keywords
temperature
liquid
control
control system
machine
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TW092104004A
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Chinese (zh)
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TWI300953B (en
Inventor
Junichi Kosugi
Tetsuo Taniguchi
Naoyuki Kobayashi
Yoshitomo Nagahashi
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Nikon Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A device and a manufacturing process conduct the temperature control of the machinery devices when necessary in order to decrease changes of base line. A first control system 61 and a second control system 62 are provided. The temperature of a first liquid is set in the first control system 61 to circulate between a projection optical PL and a substrate stage 5 in order to control the temperature of the projection optical PL. The temperature of a second liquid is set in the second control system 62 to circulate in a reticle stage 2 to control the temperature of the reticle stage. In view of the temperature ranges during setting the temperature of the liquids, the settings of the fist and the second control systems 61 and 62 are different.

Description

200305925200305925

五、發明說明(1) 發明所屬之技術領域 本發明係關於在半導憮—#斗、、也θ # — t ^ 雙兀件或液日日顯示元件專之元 件製造製程,將光罩(rnasj^ 安务 甘 > 匕句κ)之圖案像投影曝光於晶圓 (wafer)#之基板上的曝办壯班位冰一从门―u ^ , ,^ ^ ^ 九裝置及使兀件圖案轉移於基板 的7G件製造方法。 先前技術 將半導體元件或液晶g 一-楚 . 日_不兀件4以微影蝕刻製程 (photolithography)製造時,使用將光罩(ph〇t〇mask)或 光栅(reticle)(以下總稱為光栅)之圖案像經介投影光學 系統投影於感光基板上之各拍攝(s h 〇 t )區域的投影曝光 裝置。近年來,對此種投影曝光裝置,係多用步進重複 (step and repeat)方式之曝光裝置,例如縮小投影型之 曝光裝置(stepper)。上述步進重複係重複進行將感光基 板載置於可以二維移動自如的機台(stage)上,由此機台 使感光基板以步進(s t e p )移動而將光柵之圖案像順次曝 光於晶圓等之感光基板上之各拍攝區域的動作。又,在 近年,使用,在晶圓之曝光中,藉由使光栅與晶圓以同 步移動,以使晶圓上之各拍攝區域順次曝光的所謂步進 掃描(step and scan)方式之曝光裝置。 例如半導體元件等之微細元件(m i c r 〇 d e v i c e )係使多 數層之電路圖案以重疊方式形成於塗布感光劑之晶圓等 之感光基板上的關係,將第二層以後之電路圖案投影曝 光於晶圓上時,在晶圓上已經形成之電路圖案的各拍攝 區域與將要曝光的光栅之圖案的位置對準,即需要以精V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to a component manufacturing process for a semiconducting element— # 斗 、, θ # — t ^ dual element or liquid-day-day display element, and a photomask ( rnasj ^ Anwugan > The pattern of the dagger κ) is projected and exposed on the substrate of the wafer (wafer) # Exposure to the office and the ice from the door-u ^,, ^ ^ ^ Nine devices and components A method for manufacturing a 7G part whose pattern is transferred to a substrate. In the prior art, when a semiconductor element or a liquid crystal g is formed, the solar cell 4 is manufactured by a photolithography process using a photomask or a reticle (hereinafter collectively referred to as a grating). A projection exposure device for projecting a pattern image on a photosensitive substrate through a projection optical system on each of the shooting (sh) areas. In recent years, this type of projection exposure device is an exposure device using a step-and-repeat method, such as a down-projection type stepper. The above-mentioned step repetition is repeated by placing the photosensitive substrate on a stage that can be moved two-dimensionally, whereby the machine moves the photosensitive substrate in steps to sequentially expose the pattern image of the grating on the crystal. The motion of each shooting area on a photosensitive substrate such as a circle. In recent years, in the exposure of wafers, an exposure device of a so-called step and scan method is used in which the grating and the wafer are moved synchronously to sequentially expose each shooting region on the wafer. . For example, a micro device such as a semiconductor device has a circuit pattern in which a plurality of layers of circuit patterns are superimposed on a photosensitive substrate such as a wafer coated with a photosensitizer, and the circuit patterns of the second and subsequent layers are projected and exposed on the crystal. When it is on a circle, each shooting area of the circuit pattern already formed on the wafer is aligned with the position of the pattern of the grating to be exposed, that is, it needs to be fine

_7pif _ 第7頁 200305925 五、發明說明(2) 確進行晶圓與光栅之位置對準(a 1 i g n m e n t )。例如,對使 電路圖案曝光之拍攝區域以矩陣(matrix)狀配置的一片 晶圓,加以重疊曝光時使晶圓對準之方式係例如以在專 利文獻1所開示之所謂增強整體定位(E G A : E n h a n c e d Global Alignment)為主流 。 E G A方式係在晶圓(物體)上所形成之複數拍攝區域之 中,至少指定三個區域(以下稱為E G A拍攝),由定位感應 器(a 1 i g n m e n t s e n s o r )計測附隨於各拍攝區域之定位標 識(a 1 i g n m e n t m a r k )(或單稱標識)。其後,依據計測值 與設計值以最小自乘法統計運算處理以決定關於晶圓之 拍攝區域的排列特性(位置資訊)之誤差參數(偏移 (offset)、倍率(scale)、迴轉、直交度)。然後,依據 所決定的參數值,對晶圓上之全體區域補正其設計上之 座標值,按照補正之座標值,使晶圓機台步進移動以使 晶圓決定位置之方式。由此結果,可使各光柵圖案之投 影像與晶圓上之複數拍攝區域,在拍攝區域内所設定之 加工點(座標值以計測或算出之基準點,例如為拍攝區 域之中心)能正確加以重疊曝光。 從來,對計測晶圓上之定位標識的定位感應器所知者 係使用在投影光學系統近傍配設離軸(〇 f f - a X i s )方式之 定位系統的方法。此方法係使用離軸方式之定位裝置系 統計測定位標識位置後,只要將晶圓機台送進關於投影 光學系統與離軸定位系統間之距離的基線(b a s e 1 i n e )量 之一定量後,可立即使光柵之圖案加以正確重疊曝光。_7pif _ Page 7 200305925 V. Description of the invention (2) The position alignment of the wafer and the grating is performed (a 1 i g n m e n t). For example, the method of aligning the wafers when a single wafer in which a photographing area where a circuit pattern is exposed is arranged in a matrix shape is used is, for example, a so-called enhanced global positioning (EGA: Enhanced Global Alignment) is the mainstream. The EGA method is to specify at least three areas (hereinafter referred to as EGA shooting) among a plurality of shooting areas formed on a wafer (object), and a positioning sensor (a 1 ignmentsensor) measures the positioning attached to each shooting area Identification (a 1 ignmentmark) (or single name identification). After that, the minimum self-multiplication statistical calculation processing is performed according to the measured value and the design value to determine the error parameters (offset, scale, rotation, orthogonality) regarding the arrangement characteristics (position information) of the imaging area of the wafer. ). Then, according to the determined parameter values, the design coordinates of all areas on the wafer are corrected, and the wafer table is moved step by step according to the corrected coordinates to determine the position of the wafer. As a result, the projected images of each raster pattern and the plurality of shooting areas on the wafer, the processing points set in the shooting area (the reference point for which the coordinate value is measured or calculated, such as the center of the shooting area) can be accurately set. Overlap exposure. Known as a positioning sensor for measuring a positioning mark on a wafer has been a method using an off-axis (0 f f-a X i s) positioning system near a projection optical system. This method uses an off-axis positioning device system to measure the position mark position, as long as the wafer machine is fed into one of the baseline (base 1 ine) quantities about the distance between the projection optical system and the off-axis positioning system. Immediately make the pattern of the grating overlap and expose correctly.

10917pif.ptd 第8頁 200305925 五、發明說明(3) 如此,基線量為微影蝕刻製程之極為重要的操作量之關 係,係以嚴密要求正確之計測值。 可是,上述之基線量係由隨各種處理所發生之熱量使 定位系統等產生熱膨脹或熱變形,而在曝光中有變動 (b a s e 1 i n e d r i f t,基線偏移)之虞。此種場合,晶圓之 位置定位產生誤差,對重疊精度有不良影響之關係,從 來係藉由每當使晶圓曝光所定片數後實施基線校對,加 以防止重疊精度之惡化。 [專利文獻1 ] 曰本專利特開昭6卜4 4 4 2 9號公報 然而,上述之從來的曝光裝置及元件製造方法,係有 以下之問題點存在。 近年來,由於圖案之更微細化,而逐漸由步進重複方 式變成以步進掃描方式(以下,稱為掃描方式)為曝光裝 置之主流。掃描方式係晶圓及光柵之雙方在曝光中(圖案 轉移中)掃描的關係,不僅是晶圓機台,光栅機台也受馬 達等之影響容易帶熱在機台或其周圍部以緩慢的生起變 形。 機台之位置雖以干涉系統加以計測,當由機台之變形 移動鏡與光柵間之距離變化時使基線變動,以致重疊精 度惡化。又,由機台之發熱而機台周圍之環境溫度上 升,由干涉儀光路之搖動的影響,產生機台位置定位精 度惡化之問題。 因此,從來係由溫度調節器控制冷媒溫度,使冷媒送10917pif.ptd Page 8 200305925 V. Description of the Invention (3) In this way, the baseline amount is a very important operation amount of the lithographic etching process, and it is a strictly required accurate measurement value. However, the above-mentioned baseline amount may cause thermal expansion or thermal deformation of a positioning system or the like due to the heat generated by various processes, and may change in exposure (b a s e 1 i n e d r i f t, baseline shift). In this case, the position of the wafer may cause an error, which may have an adverse effect on the overlay accuracy. Therefore, baseline calibration is performed every time a predetermined number of wafers are exposed to prevent deterioration of the overlay accuracy. [Patent Document 1] Japanese Patent Laid-Open No. Sho 6b 4 4 4 2 9 However, the above-mentioned conventional exposure device and device manufacturing method have the following problems. In recent years, due to the finer patterns, the step-and-repeat method has gradually become the mainstream of exposure devices using a step-and-scan method (hereinafter, referred to as a scanning method). The scanning method refers to the relationship between the scanning of the wafer and the grating during exposure (pattern transfer). Not only the wafer table but also the grating table is also affected by the motor. Deformation arises. Although the position of the machine is measured by the interference system, when the distance between the moving mirror and the grating is changed by the deformation of the machine, the baseline changes, so that the overlap accuracy deteriorates. In addition, due to the heating of the machine, the ambient temperature around the machine rises, and the influence of the optical path of the interferometer on the shaking of the interferometer causes a problem that the accuracy of the positioning of the machine deteriorates. Therefore, the temperature of the refrigerant is never controlled by the temperature regulator

10917pif.ptd 第9頁 200305925 五、發明說明(4) 進(使循環)發熱部位以進行冷卻。可是,使以1 / 1 0 °c單 位激烈發熱之晶圓機台或光柵機台與以1 / 1 0 0 °c單位加以 控制溫度之投影光學系統或定位系統以一個溫度調節器 進行冷卻之場合,以投影光學系統之溫度為基準控制冷 媒溫度時,溫度變化大的晶圓機台或光柵機台之冷卻能 力變為不充分,相反的以晶圓機台或光柵機台之溫度為 基準控制冷媒溫度時,在投影光學系統或定位系統無法 進行必要之精密(微細)溫度控制。特別,光栅機台對晶 圓機台係按照投影倍率之距離、速度移動之關係,其發 熱量非常大,以與投影光學系統或定位系統同一之控制 系統加以溫度管理為困難。如此,溫度管理不充分時, 結果,基線變動變大而產生重疊精度惡化之問題。 發明内容 本發明係考慮以上問題點而實施者,以提供對各構 成機器可進行必要之溫度控制,能抑制基線變動的一種 曝光裝置及元件製造方法為目的。 茲為達成上述目的本發明係採用對應於表示實施例之 從第1圖至第1 0圖的以下構成結構。 本發明之曝光裝置係將保持於光栅機台(2 )上之光栅 (R)的圖案像經介投影光學系統(RL)投影於由基板機台 (5 )上所保持的基板(W )上之曝光裝置(1 ),其特徵在於, 包括第一控制系統(6 1 )與第二控制系統(6 2 )。其中,第 一控制系統(6 1 )係設定第一液體溫度之同時,使設定溫 度之第一液體對投影光學系統(PL)與基板機台(5)之至少10917pif.ptd Page 9 200305925 V. Description of the invention (4) Enter (circulate) the heating part for cooling. However, a wafer machine or a grating machine that generates intense heat in units of 1/10 ° c and a projection optical system or positioning system that controls temperature in units of 1/10 ° c are cooled by a temperature regulator. In the occasion, when the temperature of the refrigerant is controlled based on the temperature of the projection optical system, the cooling capacity of the wafer machine or the grating machine with a large temperature change becomes insufficient. On the contrary, the temperature of the wafer machine or the grating machine is used as a reference. When controlling the temperature of the refrigerant, the necessary precise (fine) temperature control cannot be performed in the projection optical system or positioning system. In particular, the grating machine moves to the wafer machine according to the distance and speed of the projection magnification, and its heat generation is very large. It is difficult to manage the temperature of the same control system as the projection optical system or positioning system. As described above, when the temperature management is insufficient, as a result, the baseline variation becomes large, which causes a problem that the overlapping accuracy deteriorates. SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-mentioned problems, and an object thereof is to provide an exposure apparatus and a method for manufacturing an element that can perform necessary temperature control on each constituent device and can suppress a baseline variation. In order to achieve the above object, the present invention adopts the following constitutions corresponding to the embodiment shown in Figs. 1 to 10. The exposure device of the present invention projects a pattern image of the grating (R) held on the grating machine (2) through a projection optical system (RL) onto a substrate (W) held on the substrate machine (5). The exposure device (1) is characterized in that it comprises a first control system (6 1) and a second control system (6 2). Among them, the first control system (6 1) is to set the first liquid temperature at least while setting the first liquid at the set temperature to at least the projection optical system (PL) and the substrate machine (5).

10917pif.ptd 第10頁 200305925 五、發明說明(5) 一方的物體(PL )加以循環,以控制物體(PL )之溫度。第 二控制系統(6 2 )係以與第一控制系統(6 1 )獨立設定第二 液體溫度,使溫度設定之第二液體對光柵機台(2 )加以循 環,以控制光柵機台(2 )之溫度。在設定液體溫度時之溫 度範圍的大小之點,第一、第二控制系統(6 1 、6 2 )係具 有互異之設定能力。 因此,對本發明之曝光裝置,係可以各獨立,在第一 控制系統(6 1 )藉由使第一液體加以循環,使投影光學系 統(P L )或機台(5 )例如以1 / 1 0 0 °C單位加以控制,在第二 控制系統(6 2 )藉由使第二液體加以循環可使光栅機台(2 ) 例如以1 / 1 0 °C單位加以控制。即,藉由按照投影光學系 統(P L· )或光柵機台(2 )所要求之溫度範圍以個另設定第 一、第二控制系統(6 1 、6 2 ),可以各機器所要求之精度 加以溫度控制,能抑制起因於溫度變動之基線變動。 又,本發明之曝光裝置係將保持於光栅機台(2 )上之 光柵(R)的圖案像經介投影光學系統(PL)投影於由基板機 台(5 )上所保持的基板(W )上之曝光裝置(1 ),其特徵在 於,包括:第一控制系統(6 1 )、第二控制系統(6 2 )、第 一檢測手段及第二檢測手段(7 6 a、7 6 b )。其中,第一控 制系統(61 )係設定使第一液體對投影光學系統(PL)與基 板機台(5 )中之至少一方的物體(P L )加以循環時的第一循 環條件之同時,在第一循環條件下使第一液體加以循 環,以控制物體(P L )之溫度。第二控制系統(6 2 )係與第 一循環條件以獨立設定使第二液體對光柵機台(2 )加以循10917pif.ptd Page 10 200305925 V. Description of the invention (5) One object (PL) is circulated to control the temperature of the object (PL). The second control system (6 2) sets the second liquid temperature independently from the first control system (6 1), and circulates the temperature-set second liquid to the grating machine (2) to control the grating machine (2). ) Temperature. When setting the temperature range of the liquid temperature, the first and second control systems (6 1 and 6 2) have different setting capabilities. Therefore, the exposure device of the present invention can be independent. The first control system (6 1) circulates the first liquid to make the projection optical system (PL) or the machine (5), for example, 1/1 0. Control is performed in units of 0 ° C, and the grating machine (2) is controlled in the second control system (62) by circulating the second liquid, for example, in units of 1/10 ° C. That is, by setting the first and second control systems (6 1, 6 2) separately according to the temperature range required by the projection optical system (PL ·) or the grating table (2), the accuracy required by each machine can be By controlling the temperature, it is possible to suppress the baseline fluctuation caused by the temperature fluctuation. The exposure device of the present invention projects a pattern image of the grating (R) held on the grating machine (2) through a projection optical system (PL) onto a substrate (W) held on the substrate machine (5). ) Exposure device (1), characterized in that it includes: a first control system (6 1), a second control system (6 2), a first detection means and a second detection means (7 6 a, 7 6 b ). Among them, the first control system (61) sets a first circulation condition when the first liquid circulates an object (PL) in at least one of the projection optical system (PL) and the substrate table (5). The first liquid is circulated under the first circulation condition to control the temperature of the object (PL). The second control system (62) is set independently from the first circulation condition so that the second liquid can cycle the grating machine (2).

10917pif.ptd 第11頁 200305925 五、發明說明(6) 環時的第二循環條件之同時,在第二循環條件下使第二 液體加以循環,以控制光柵機台(2 )之溫度。第一檢測手 段係各檢測在物體(P L )循環前之第一液體溫度與在物體 (P L )循環後之第一液體溫度。第二檢測手段(7 6 a、7 6 b ) 係檢測在光柵機台(2 )循環前之第二液體溫度與在光栅機 台(2 )循環後之第二液體溫度。第一控制系統(6 1 )係依據 第一檢測手段之檢出結果設定第一循環條件,第二控制 系統(6 2 )係依據第二檢測手段(7 6 a、7 6 b )之檢出結果設 定第二循環條件。 因此,本發明之曝光裝置係可以各獨立,藉由以第一 循環條件使第一液體加以循環,將投影光學系統(PL)或 基板機台(5 )例如以1 / 1 0 0 °C單位加以控制,在第二控制 系統(6 2 )藉由使第二液體加以循環,將光柵機台(2 )例如 以1 / 1 0 °C單位加以控制。即,藉由按照投影光學系統 (PL)或光柵機台(2 )所要求之温度範圍以個別設定第一、 第二控制系統(6 1、6 2 ),可以各機器所要求之精度加以 溫度控制,能抑制起因於溫度變動之基線變動。此時, 第一、第二循環條件係依據在各機器循環前與後所檢出 之第一、第二液體溫度加以設定之關係,可依據在各機 器循環所產生之第一、第二液體之溫度變化加以實施高 精度之溫度控制。 然而,本發明之曝光裝置係將保持於光柵機台(2 ) 上之光柵(R)的圖案像經介投影光學系統(PL)投影於由基 板機台(5 )上所保持的基板(W )上之曝光裝置(1 ),其特徵10917pif.ptd Page 11 200305925 V. Description of the invention (6) At the same time as the second circulation condition of the ring, the second liquid is circulated under the second circulation condition to control the temperature of the grating machine (2). The first detection means respectively detects the first liquid temperature before the object (P L) is circulated and the first liquid temperature after the object (P L) is circulated. The second detection means (76a, 76b) detects the temperature of the second liquid before the grating machine (2) circulates and the temperature of the second liquid after the grating machine (2) circulates. The first control system (6 1) sets a first cycle condition based on the detection result of the first detection means, and the second control system (6 2) is based on the detection of the second detection means (7 6 a, 7 6 b). As a result, a second cycle condition is set. Therefore, the exposure device of the present invention can be independent, and the projection optical system (PL) or the substrate machine (5) can be circulated in the unit of 1/100 ° C by circulating the first liquid under the first circulation condition. It is controlled, and the grating machine (2) is controlled, for example, in the unit of 1/10 ° C by circulating the second liquid in the second control system (62). That is, by setting the first and second control systems (61, 62) individually according to the temperature range required by the projection optical system (PL) or the grating machine (2), the temperature can be added to the accuracy required by each machine. The control can suppress the baseline variation caused by the temperature variation. At this time, the first and second circulation conditions are set according to the relationship between the temperature of the first and second liquids detected before and after each machine cycle, and can be based on the first and second liquids produced by each machine cycle. The temperature change is subject to high-precision temperature control. However, the exposure device of the present invention projects a pattern image of the grating (R) held on the grating table (2) through a projection optical system (PL) onto a substrate (W) held on the substrate table (5). The exposure device (1) on

10917pif.ptd 第12頁 200305925 五、發明說明(7) 在於,光栅機台(2 )及基板機台(5 )係各具備複數驅動源 (1 5、1 7 X、1 7 Y、7 2及3 3、3 5 ),並包括第一控制系統 (6 1 )與第二控制系統(6 2 )。其中,第一控制系統(6 1 )係 對複數驅動源(1 5、1 7 X、1 7 Y、7 2及3 3、3 5 )及投影光學 系統(P L )之中,發熱量或溫度變化量在第一所定量以内 之第一控制對象加以溫度控制。第二控制系統(6 2 )係對 複數驅動源(1 5、1 7 X、1 7 Y、7 2及3 3、3 5 )及投影光學系 統(P L )之中,發熱量或溫度變化量比第一所定量較大之 第二控制對象加以溫度控制。 因此,本發明之曝光裝置係可以各獨立控制,使發熱 量或溫度變化量較小之基板機台的驅動源(3 3、3 5 )或投 影光學系統(P L )為第一控制對象由第一控制系統(6 1 )加 以控制,使發熱量或溫度變化量較大之光栅機台的驅動 源(1 5 )為第二控制對象由第二控制系統(6 2 )加以獨立控 制。即,藉由按照投影光學系統(PL)或機台的驅動源 (1 5 )之發熱量或溫度變化量為控制對象,可以各機器所 要求之精度加以溫度控制,能抑制起因於溫度變動之基 線變動。 又,本發明之元件製造方法,其特徵在於,包括:使 用申請專利範圍從第1項至第2 8項中之任何一項所述之曝 光裝置,將光栅(R)上所形成之圖案轉移於基板(W)上的 製程。 因此,本發明之元件製造方法,係以實施必要之溫度 控制的狀態可使圖案轉移於基板(W)上,抑制起因於溫度10917pif.ptd Page 12 200305925 V. The description of the invention (7) is that the grating machine (2) and the substrate machine (5) each have a complex driving source (1 5, 1 7 X, 1 7 Y, 7 2 and 3, 3, 5), and includes a first control system (6 1) and a second control system (6 2). Among them, the first control system (6 1) generates heat or temperature in a plurality of driving sources (1 5, 17, 7 X, 1 7 Y, 7 2 and 3 3, 3 5) and the projection optical system (PL). The first control object whose variation is within the first amount is temperature-controlled. The second control system (62) is the amount of heat generation or temperature change in the complex driving source (1, 5, 7 X, 1 7 Y, 7 2 and 3 3, 3 5) and the projection optical system (PL). The second control object that is larger than the first quantity is temperature-controlled. Therefore, the exposure device of the present invention can be independently controlled so that the driving source (3, 3, 5) or the projection optical system (PL) of the substrate machine with a small amount of heat generation or temperature change is the first control object. A control system (61) controls the drive source (15) of the grating machine with a large amount of heat generation or temperature change as the second control object and is independently controlled by the second control system (62). That is, by controlling the amount of heat generation or temperature change of the projection optical system (PL) or the drive source (1 5) of the machine as the control object, the temperature can be controlled with the accuracy required by each machine, which can suppress the temperature change. Baseline changes. In addition, the device manufacturing method of the present invention is characterized by comprising: using an exposure device described in any one of the first to the twenty-eighth patent applications to transfer the pattern formed on the grating (R) Process on substrate (W). Therefore, the element manufacturing method of the present invention enables the pattern to be transferred to the substrate (W) in a state where necessary temperature control is performed, and suppresses the temperature-dependent state.

10917pif.ptd 第13頁 200305925 五、發明說明(8) 變動之基線變動,可得以優良重疊精度之元件。 如以上說明,本發明係對所要求之溫度控制精度相異 的機器也可以各獨立加以溫度控制·管理,按照各機器 之發熱量設定最適合的冷卻條件之關係,可抑制起因於 無溫度控制時之基線變動能抑止重疊精度之惡化。又, 本發明係對裝置之小型化及低價格化具有貢獻效果。 為讓本發明之上述原理和其他目的、特徵和優點能更 明顯易懂,下文特舉一較佳實施例,並配合所附圖式, 作詳細說明如下: 實施方式 以下,參照第1圖至第7圖說明本發明之曝光裝置及 元件製造方法之第一實施例。在此,例如對曝光裝置係 使用在曝光中(圖案轉移中)一面使光柵所形成之半導體 元件的電路圖案轉移於晶圓上之掃描曝光裝置(scanning s t e p p e r )的場合之例加以說明。 第一圖所示之曝光裝置1係概略由照明光學系統I U、 機台裝置4、投影光學系統PL、機台裝置7及反衝框架 (r e a c t i ο n f r a m e ) 8所構成。其中,照明光學系統I U係由 光源(未圖示)之曝光用照明光以均一照度照明光柵(光 罩)上之矩形狀(或圓弧狀)的照明區域。機台裝置4係包 含保持光栅R移動之光柵機台(光罩機台)2及支持該光栅 機台2之光柵定盤3。投影光學系統PL係使從光柵R所出射 之照明光投影於晶圓(基板)W上。機台裝置7係包含保持 試樣之晶圓W移動之晶圓機台(基板機台)5及保持該晶圓10917pif.ptd Page 13 200305925 V. Description of the invention (8) The baseline variation of the variation can be used to superimpose components with excellent accuracy. As described above, the present invention can independently perform temperature control and management on machines with different temperature control accuracy requirements, and set the relationship between the most suitable cooling conditions according to the heat generation of each machine, which can suppress the causes caused by no temperature control. The change in baseline at this time can suppress the deterioration of overlap accuracy. In addition, the present invention has an effect of contributing to miniaturization and reduction in price of the device. In order to make the above principles and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows: Embodiments are described below with reference to FIGS. 1 to FIG. 7 illustrates a first embodiment of an exposure apparatus and a device manufacturing method of the present invention. Here, an example of a case where the exposure device is a scanning exposure device (scanning s t p p r r) that transfers a circuit pattern of a semiconductor element formed by a grating to a wafer during exposure (pattern transfer) is used. The exposure device 1 shown in the first figure is roughly composed of an illumination optical system I U, a machine device 4, a projection optical system PL, a machine device 7, and a recoil frame (r e a c t i ο n f r a m e) 8. Among them, the illumination optical system I U is a rectangular (or arc-shaped) illumination area on a grating (mask) with uniform illumination by the exposure illumination light from a light source (not shown). The machine device 4 includes a grating machine (reticle machine) 2 which keeps the movement of the grating R, and a grating fixing plate 3 which supports the grating machine 2. The projection optical system PL projects the illumination light emitted from the grating R onto a wafer (substrate) W. The machine device 7 includes a wafer machine (substrate machine) 5 which holds a wafer W holding a sample and holds the wafer.

10917pif ptd 第14頁 200305925 五、發明說明(9) 機台5之定盤6。反衝框架8係支持上述機台裝置4及投影 光學系統PL。尚且,在此以投影光學系統PL之光軸方向 為Z方向,以與此Z方向直交之方向而光栅R與晶圓W之同 步移動方向為Y方向,以非同步移動方向為X方向。又, 各軸周圍之迴轉方向為ΘΖ、ΘΥ、ΘΧ。 照明光學系統I U係由固定於反衝框架8上面之支持柱9 加以支持。尚且,曝光用照明光係例如使用從超高壓水 銀燈所出射之紫外域之輝線(g線、i線)及K r F準分子雷射 (excimer laser)光(波長248mm)等之遠紫外光(DUV) 或,ArF準分子雷射光(波長193nm)&F2雷射光(波長 157nm)等之真空紫外光(VUV)等。 反衝框架8係設置於以水平載置在底盤之基盤(base p 1 a t e ) 1 0上,在其上部側面即下部側面,各形成向内側 之突出段部8a及8b。 機台裝置4之中,在光栅定盤3之各角隅係以經介防振 部件(u n i t) 1 1大略以水平支承於反衝框架8之段部8 a (尚 且,對紙面内側之防振部件係未加以圖示),在其中央部 係形成開口 3 a以使在光柵R所形成之圖案像通過。尚且, 光栅定盤3之材料係可使用金屬或陶瓷(ceramics)。防振 部件11係由内壓可調整之空氣底座(air mount)12與音 圈馬達(voice coil motor)13以串聯配置於段部8a上所 構成。藉由此等防振部件1 1,使經介基盤1 0及反衝框架 8,傳導於光柵定盤3之微振動以微米(m i c r 〇 ) G水準加以 絕緣(G為重力加速度)。10917pif ptd Page 14 200305925 V. Description of the invention (9) Fixing plate 6 of machine 5. The recoil frame 8 supports the machine device 4 and the projection optical system PL. In addition, here, the direction of the optical axis of the projection optical system PL is the Z direction, the direction of the grating R and the wafer W's synchronous movement direction is the Y direction, and the asynchronous movement direction is the X direction. In addition, the rotation directions around each axis are ΘZ, ΘZ, ΘX. The illumination optical system I U is supported by a support column 9 fixed on the recoil frame 8. In addition, as the illumination light for exposure, for example, far-ultraviolet light (g-line, i-line) and K r F excimer laser light (wavelength 248 mm), such as far-ultraviolet light (e.g. DUV) or vacuum ultraviolet light (VUV), such as ArF excimer laser light (wavelength 193nm) & F2 laser light (wavelength 157nm). The recoil frame 8 is provided on a base plate (base p 1 a t e) 10 which is horizontally placed on the chassis, and on the upper side, i.e., the lower side, protruding sections 8a and 8b inward are formed. In the machine device 4, the corners of the grating platen 3 are supported by the section 11 of the recoil frame 8 approximately horizontally via a vibration-proof unit 11 (Also, the protection against the inner side of the paper surface) The vibrating member is not shown), and an opening 3 a is formed in a central portion thereof to allow a pattern image formed in the grating R to pass through. Moreover, the material of the grating fixing plate 3 can be metal or ceramics. The anti-vibration member 11 is composed of an air mount 12 with adjustable internal pressure and a voice coil motor 13 arranged in series on the segment 8a. With these anti-vibration components 11, the micro-vibrations transmitted through the substrate 10 and the recoil frame 8 to the grating plate 3 are insulated at a micrometer (m i c r) G level (G is a gravity acceleration).

10917pif ptd 第15頁 200305925 五、發明說明(ίο) 在光栅定盤3上,光栅機台2係沿該光栅定盤3以可二 維移動方式加以支承。在光栅機台2之底面係固定複數空 氣轴承(air bearing)[氣塾(air pad)]14,藉由此等空 氣軸承1 4使光柵機台2在光柵定盤3上以數微米(m i c r ο η ) 程度之間隙(c 1 e a r a η c e )加以漂浮支承。又,在光栅機台 2之中央部,係形成與光柵定盤3之開口 3 a連通的開口 2 a 以使光栅R之圖案像通過。 夕兹對光栅機台2加以詳述,如第2圖所示,光柵機台2 係由光栅粗動機台1 6與光柵微動機台1 8所構成。其中, 光概粗動機台1 6係由一對Y線性馬達(1 i n e a r m 〇 t 〇 r )(驅 動源)15、15在光栅定盤3上以所定行程(stroke)驅動於 驅動於Y轴方向。光柵微動機台1 8係由一對音圈馬達(驅 動、源1 7 Χ與一對音圈馬達(驅動源)1 7 Υ以微小驅動於X、 $方向(尚且,在第1圖係以一個機台加以圖示) 線f生馬達1 5係由定子(s t a t 〇 r ) 2 〇與活動元件 (movable 般3上 element)2l所構成。其中,定子20係在光柵定 ^浮支承非正接觸空氣轴承之複數空氣轴承(空氣塾)1 9加以 :設,^ =伸在γ轴方向。活動元件2 1係對應於此定子20 藉^動^連結構件2 2固定於光柵粗動機台1 6。因此, 動而定^寸十旦定律’按照光栅粗動機台1 6向+ Y方向之移 動。由此2係以平衡質量(counter mass)向-Y方向移 的反作用疋子2 〇之移動可抵消隨光柵粗動機台1 6之移動 線性馬達^ t =時,可防止重心位置之變化。尚且,在γ 之動子2 1與定子2 〇係以偶聯(c 〇 u p 1 i n g )之關10917pif ptd Page 15 200305925 V. Description of the Invention On the grating fixing plate 3, the grating machine 2 is supported along the grating fixing plate 3 in a two-dimensionally movable manner. A plurality of air bearings [air pads] 14 are fixed on the bottom surface of the grating machine 2, and the grating machine 2 is set on the grating platen 3 by a few micrometers (micr ο) by the air bearings 14. η) to a degree of clearance (c 1 eara η ce) for floating support. Further, an opening 2a communicating with the opening 3a of the grating fixing plate 3 is formed in the central portion of the grating table 2 so that the pattern image of the grating R can pass through. Xizi details the grating stage 2. As shown in FIG. 2, the grating stage 2 is composed of a grating stage 16 and a grating stage 18. Among them, the optical rough motor table 16 is driven by a pair of Y linear motors (1 inearm 〇t 〇r) (drive source) 15 and 15 on the grating plate 3 with a predetermined stroke in the Y-axis direction. . The grating micromotor table 1 8 is composed of a pair of voice coil motors (drive, source 1 7 χ and a pair of voice coil motors (drive source) 1 7) with minute drive in the X and $ directions (still, in the first picture, the A machine is illustrated) The line motor 15 is composed of a stator (stat 0r) 2 0 and a movable element 2 (movable element 3). Among them, the stator 20 is fixed to the grating by a non-positive floating support. A plurality of air bearings (air 塾) contacting the air bearing 1 9 are added: Let ^ = extend in the γ axis direction. The moving element 2 1 corresponds to this stator 20 by ^ moving ^ connecting member 2 2 is fixed to the grating coarse motor table 1 6. Therefore, according to the rule of ^ inch ten densities, the movement of the grating stage 16 to the + Y direction is performed. Thus, 2 is a reaction mass that moves to the -Y direction with a counter mass. The movement can offset the linear motor that moves with the coarse stage 16 of the grating. When t =, it can prevent the change of the position of the center of gravity. In addition, the mover 21 of γ and the stator 2 0 are coupled (c 〇up 1 ing). Key point

第16頁 200305925 一 -----—______ 五、發明說明(11) - 2,此等以相對移動時,具有停留於原位置之力量的作 。因此’在本實施例,為使定子2 0到達所定位置而設 不正其移動里之修整馬達(trim m〇t〇r)72(驅動源;在第 ^圖未經圖示,參照第5圖)。 立光栅粗動機台係由固定於形成在光柵定盤3之中央 4的上部突出段部3 b上面而延伸於γ軸方向之一對導向器 (§ u i d e ) 5 1、5 1導向於Y軸方向。又,光栅粗動機台j 6係 對此等Y導向器51 、51由未圖示之空氣軸承以非接觸方式 支承。 光柵微動機台18係經介未圖示之真空夾盤(vacuum chuck)吸附保持光柵R。在光柵微動機台1 8之-γ方向的端 部係固定由隅角反射器(corner cube)所構成之一對γ移 動鏡52a、52b,又,在光柵微動機台18之+ X方向的端 部,係固定由延伸於Y軸方向之平面鏡所構成的X移動鏡 53。然而,對此等移動鏡52a、52b、53藉由照射測長光 束之三個干涉儀(均未圖示)加以計測與各移動鏡之距 離,可以高精度計測光柵機台2之X、γ、0 Z ( Z軸周圍之 _轉)方向的位置。 返回第1圖,對於投影光學系統p L,在此係使用,物 體面(光柵R )側與像面(晶圓W )側之雙方具有遠心的 (telecentric)圓形之投影視野’由以石英或螢石為光學 破璃材料之折射光學元件(透鏡元件)所構成的1 / 4 (或 1 / 5 )縮小倍率之折射光學系統。因而,當照明光照射光 柵R時,光柵R上之電路圖案之中,從照明光所照射之部Page 16 200305925 I --------- ______ V. Description of the Invention (11)-2 It is a work that has the power to stay in the original position during relative movement. Therefore, in this embodiment, a trimming motor 72 (driving source) is provided for the stator 20 to reach a predetermined position. The trimming motor 72 (driving source; not shown in FIG. ^, Refer to FIG. 5). ). The rough grating stage of the vertical grating is guided by a pair of guides (§ uide) 5 1, 5 1 which are fixed on the upper protruding section 3 b formed on the center 4 of the grating plate 3 and extend in the γ-axis direction. direction. The coarse grating stage j 6 is a non-contact type Y guide 51, 51 supported by an air bearing (not shown). The grating micromotor table 18 is configured to adsorb and hold the grating R via a vacuum chuck (not shown). A pair of γ moving mirrors 52a, 52b, which are formed by a corner cube, are fixed to the end of the grating micromotor table 18 in the -γ direction. The end is fixed to an X-moving mirror 53 constituted by a plane mirror extending in the Y-axis direction. However, these moving mirrors 52a, 52b, and 53 can measure the distance to each moving mirror by using three interferometers (none of which are shown) that irradiate a long beam, and can measure X and γ of the grating machine 2 with high accuracy. , 0 Z (position around the Z axis) direction. Returning to FIG. 1, the projection optical system p L is used in this system. A telecentric circular projection field of view on both the object surface (grating R) side and the image surface (wafer W) side is made of quartz. Or fluorite is a refracting optical system of 1/4 (or 1/5) reducing magnification formed by the refracting optical element (lens element) of the optical glass breaking material. Therefore, when the illuminating light is irradiated to the light grid R, among the circuit patterns on the light grid R, the portion irradiated by the illuminating light is

_l7pif ptcj 第17頁 200305925 五、發明說明(12) 份的結像光束入射於投影光學系統,其電路圖案之部分 倒立像係以限制成為縫隙(s 1 i t)狀結像於投影光學系統 P L之像面側的圓形視野之中央。藉此,所投影之電路圖 案的部分倒立像,係以縮小轉移於配置在投影光學系統 P L之結像面的晶圓W上之複數拍攝區域中之一個拍攝區域 表面的光阻層。在投影光學系統P L之鏡筒部的外周係設 與該鏡筒部一體化之凸緣(Π a n g e ) 2 3。然而,投影光學 系統PL係以光軸方向為Z方向從上插入於鏡筒定盤25之同 時,與凸緣23接合。其中,鏡筒定盤25係在反衡框架8之 段部8 b經介防振部件2 4大略以水平支承的鑄件等所構 成。 防振部件2 4係配置於鏡筒定盤2 5之各角隅(尚且,紙 面内面側之防振部件並未圖示),係由内壓可調整之空氣 底座(air mount)26與音圈馬達27以串聯配置於段部8b上 加以構成。藉由此等防振部件2 4,使經介基盤1 0及反衡 框架8傳導於鏡筒定盤2 5 (延至投影光學系統)之微振動以 微米(m i c r 〇 ) G水準加以絕緣。 機台裝置7係以晶圓機台5、晶圓定盤6、試樣台ST及X 導杆(guide bar)XG為主體所構成。其中,晶圓定盤6係 使晶圓機台5可沿X Y平面以二維方向移動之方式加以支 承。試樣台S T係吸附保持與晶圓機台5設成一體的晶圓 W。X導杆XG係使此等晶圓機台5及試樣台ST以相對移動自 如之方式加以支承。在晶圓機台5之底面係固定非接觸軸 承之複數空氣軸承(氣墊)28,由此等空氣軸承28使晶圓_l7pif ptcj Page 17 200305925 V. Description of the invention (12) The junction image beam is incident on the projection optical system, and a part of the inverted image of the circuit pattern is limited to form a slit (s 1 it) junction image on the projection optical system PL. The center of the circular field of view on the image plane side. As a result, the partially inverted image of the projected circuit pattern is used to reduce the photoresist layer on the surface of one of the plurality of imaging regions transferred on the wafer W arranged on the junction image plane of the projection optical system PL. On the outer periphery of the lens barrel portion of the projection optical system PL, a flange (Π ange) 2 3 integrated with the lens barrel portion is provided. However, the projection optical system PL is engaged with the flange 23 while being inserted into the lens barrel fixing plate 25 from above with the optical axis direction being the Z direction. Among them, the lens barrel fixing plate 25 is formed in the section portion 8b of the counterbalance frame 8 by a casting or the like which is supported approximately horizontally by the vibration-proof member 24. The anti-vibration parts 2 4 are arranged at the corners of the lens barrel fixing plate 2 5 (also, the anti-vibration parts on the inner side of the paper surface are not shown). They are air mounts 26 with adjustable internal pressure and sound. The ring motor 27 is configured by being arranged in series on the segment portion 8b. With such anti-vibration members 24, the micro-vibration transmitted through the base plate 10 and the counterbalance frame 8 to the lens barrel fixed plate 25 (extended to the projection optical system) is insulated at a micrometer (m i c r) G level. The machine device 7 is mainly composed of a wafer machine 5, a wafer fixing plate 6, a sample table ST, and an X guide bar XG. Among them, the wafer fixing plate 6 enables the wafer table 5 to be supported in a two-dimensional direction along the X Y plane. The sample stage S T adsorbs and holds a wafer W integrated with the wafer table 5. The X guides XG support these wafer machine tables 5 and sample tables ST in a relatively movable manner. A plurality of non-contact bearing air bearings (air cushions) 28 are fixed to the bottom surface of the wafer table 5. The air bearings 28 make the wafers

10917pif.ptd 第18頁 200305925 五、發明說明(13) 機台5在晶圓定盤6上例如以數微米(micr〇n)程度之間隙 加以漂浮支承。 晶圓定盤6係在基盤1 0之上方,經介防振部件2 9以大 略水平加以支承。防振部件2 9係配置於晶圓定盤6之各角 隅(尚且,紙面内面側之防振部件未經圖示),由内壓可 調整之空氣底座30與音圈馬達31在基盤ί〇上以並聯配置 所構成。藉由此4防振部件2 9,使經介基盤;[〇傳導於晶 圓定盤6之微振動係以微米(m i c r 〇 ) G之水準加以絕緣。10917pif.ptd Page 18 200305925 V. Description of the invention (13) The machine 5 is floatingly supported on the wafer fixing plate 6 with a gap of, for example, several micrometers. The wafer fixing plate 6 is supported above the base plate 10, and is supported at a substantially horizontal level via a dielectric anti-vibration member 29. The anti-vibration components 29 and 9 are arranged at the corners of the wafer fixing plate 6 (still, the anti-vibration components on the inner side of the paper surface are not shown). The air base 30 and the voice coil motor 31 with adjustable internal pressure are located on the base plate. 〇 is composed of a parallel arrangement. With this 4 anti-vibration members 29, the micro-vibration transmitted to the crystal disc fixing plate 6 via the dielectric disc 6 is insulated to a level of micrometer (m i c r) G.

如第三圖所示’ X導杆X G係呈為沿X方向之長尺形狀, 在其長度方向兩端係各設由電樞(armature)所構成之活 動元件3 6、3 6。對應於此等活動元件3 6、3 6具有磁鐵部 件之定子(stator)37、37係設於突設在基盤10之支承部 3 2、3 2 (參照第1圖,尚且在第1圖係以簡略圖示活動元件 3 6及定子3 7 )。然而,由此等活動元件3 6及定子3 7加以構 成動圈(moving coil)型之線性馬達(驅動源)33、33,活 動元件3 6藉由與定子3 7之間的電磁相互作用而加以驅 動,使X導杆XG移動於γ方向之同時,藉由調整線性馬達 3 3、3 3之驅動’以使迴轉移動於0 Z方向。即,由此線性 2達33使晶圓機台5(及試樣台st,以下單稱試樣台)與X 導杆XG大略以一體驅動於γ方向及θζ方向。As shown in the third figure, the X guide X G has a long shape in the X direction, and at both ends in the length direction, movable elements 3 6 and 36 each including an armature are provided. Corresponding to these movable elements 3 6, 3 6 are stators 37, 37 having magnet components, which are provided on the supporting portions 3 2, 3 2 protruding from the base plate 10 (refer to FIG. 1 and FIG. 1). The movable element 36 and the stator 37 are illustrated in a simplified manner. However, the moving elements 36 and the stator 37 constitute linear motors (driving sources) 33 and 33 of a moving coil type, and the moving element 3 6 is electromagnetically interacted with the stator 37 Drive it to move the X guide XG in the γ direction, and adjust the drive of the linear motors 3 3, 3 3 to move the rotation in the 0 Z direction. That is, from this linearity of 2 to 33, the wafer machine table 5 (and the sample table st, hereinafter simply referred to as the sample table) and the X guide XG are roughly driven integrally in the γ and θζ directions.

又,在X導杆XG之-X方向側,係裝設χ修整馬達34之活 ,疋件。X修整馬達34係藉由在X方向產生推力加以調整X V杆XG之X方向的位置,其定子係設在反衡框架8。因 此,使晶圓機台5驅動源於^方向時之反作用力,係經介In addition, on the -X direction side of the X guide XG, there is a work for installing the χ trimming motor 34. The X trimming motor 34 adjusts the position in the X direction of the X V rod XG by generating thrust in the X direction, and the stator thereof is provided in the counterbalance frame 8. Therefore, the reaction force when the wafer machine 5 is driven in the direction of ^

200305925 五、發明說明(14) 反衡框架8傳達於基盤10。 試樣台ST係經介在與X導杆XG間維持所定量之間隔 (gap)於Z方向由磁鐵及致動器(actuator)所構成之磁導 向器(magnetic guide),在X導杆XG以非接觸支承保持可 相對移動自如於X方向。又,晶圓機台5係由X線性馬達 (驅動源)3 5之電磁相互作用加以驅動於X方向,X線性馬 達之定子係埋設於X導杆XG,尚且,X線性馬達之活動元 件雖未圖示,係裝設於晶圓機台5。在試樣台ST之上面, 晶圓W係經介晶圓保持架(h ο 1 d e r ) 4 1以真空吸附等加以固 定(參照第1圖,在第3圖圖示從略)。 晶圓機台5之X方向的位置係以固定在投影光學系統PL 之鏡筒下端的參照鏡42為基準,藉由雷射干涉儀44以所 定解析度(resolution),例如以0.5〜lnm程度之解析度加 以實時(r e a 1 t i m e )計測固定於晶圓機台5之一部份的移 動鏡43之位置變化。尚且,由與上述參照鏡42、移動鏡 43、雷射干涉儀44以大略直交之方式所配置之未圖示的 參照鏡、雷射干涉儀及移動鏡加以計測晶圓機台5之Y方 向的位置。尚且,此等雷射干涉儀之中,至少一方係測 長軸具有二軸以上之多軸干涉儀,依據此等干涉儀之計 測值不僅可求晶圓機台5 (延至晶圓W)之XY位置,0迴轉 量,也可再加上求整平(leveling)量。 更且,在投影光學系統PL之凸緣23,雷射干涉儀4 5係 固定於相異之三個地點(但,在第1圖表示此等雷射干涉 儀中之一個為代表)。對向於各雷射干涉儀4 5之鏡筒定盤200305925 V. Description of the invention (14) The counterbalance frame 8 is transmitted to the base plate 10. The sample stage ST is a magnetic guide composed of a magnet and an actuator in the Z direction via a fixed gap between the X guide XG and XG. The non-contact support maintains relative movement freely in the X direction. In addition, the wafer machine 5 is driven in the X direction by the electromagnetic interaction of the X linear motor (driving source) 35. The stator of the X linear motor is embedded in the X guide rod XG. Not shown, it is mounted on the wafer table 5. On the top of the sample table ST, the wafer W is fixed via a vacuum wafer holder (h ο 1 d e r) 4 1 by vacuum suction or the like (refer to FIG. 1, and the illustration is omitted in FIG. 3). The position in the X direction of the wafer table 5 is based on a reference mirror 42 fixed to the lower end of the lens barrel of the projection optical system PL, and the laser interferometer 44 is used to set the resolution, for example, about 0.5 to 1 nm. The resolution is measured in real time (rea 1 time) to measure the position change of the moving mirror 43 fixed to a part of the wafer table 5. In addition, the Y direction of the wafer table 5 is measured by a reference mirror, a laser interferometer, and a moving mirror (not shown) which are arranged substantially orthogonal to the reference mirror 42, the moving mirror 43, and the laser interferometer 44. s position. Moreover, at least one of these laser interferometers is a multi-axis interferometer with a long axis having more than two axes. According to the measured values of these interferometers, not only the wafer machine 5 (extended to wafer W) can be obtained. XY position, 0 rotation, can also be added to leveling (leveling). Furthermore, at the flange 23 of the projection optical system PL, the laser interferometer 45 is fixed to three different locations (however, one of these laser interferometers is represented in FIG. 1). The lens tube fixing plate facing each laser interferometer 4 5

10917pif ptd 第20頁 200305925 五、發明說明(15) 2 5之部分,係各形成開口 2 5 a,從各雷射干涉儀4 5之Z方 向雷射光束(測長光束)係經過此等開口 2 5 a向晶圓定盤6 加以照射。在晶圓定盤6上面之各測長光束的對向位置, 係各形成反射面。因此,由上述三個雷射干涉儀4 5,以 凸緣2 3為基準,各加以計測晶圓定盤6之相異三點之z位 置。 其次,以第4圖至第6圖加以說明在曝光裝置1之溫度 控制系統。 第4圖係表示關於曝光裝置全體的溫度控制系統,在 第5圖表示關於光柵機台2的溫度控制系統,在第6圖係表 示關於晶圓機台5的溫度控制系統。尚且,溫度調節用之 媒體(冷媒)雖係可使用HFE(Hydr〇(氫).Flu〇r〇(氟)·10917pif ptd Page 20 200305925 V. Description of the invention (15) 2 5 each form an opening 2 5 a, and a laser beam (length measuring beam) in the Z direction from each laser interferometer 45 passes through these openings. 2 5 a irradiates the wafer fixing plate 6. The opposing positions of the length-measuring beams on the wafer fixing plate 6 each form a reflecting surface. Therefore, each of the three laser interferometers 45 and 35 with the flange 23 as a reference is used to measure the z positions of the three different points of the wafer fixing plate 6. Next, the temperature control system in the exposure apparatus 1 will be described with reference to Figs. 4 to 6. Fig. 4 shows a temperature control system for the entire exposure apparatus, Fig. 5 shows a temperature control system for the grating table 2, and Fig. 6 shows a temperature control system for the wafer table 5. In addition, although the medium (refrigerant) used for temperature adjustment can use HFE (Hydr0 (hydrogen). FluOr〇 (fluorine) ·

EthTri乙醚))或FLU0RINERT(商品名),在本實施例從地 球蜋i兄保護之觀點,為使地球溫暖化係數較低,臭 壞係數為零之關係,係使用H F E。 9,皿度控制系統係大別為第一控制系統6 1與第二杵fll 糸、、先6 2。其中,第一控制系統6丨係使用第一液體之冷二 f :投影光學系統PL及定位系統AL為 “ L =度控制.管理。第二控制系統62係使用ί ί ί : ί:以光柵機台2及晶圓機台5為第二控制對〜 人第控制系統6 1獨立加以溫度控制管理。a 且’此二度控制系統係以發熱量(溫度變二^所^ (一弟;/二,:内之投影光學系統PL及定位系統AL為; -度控制對象’以發熱量比上述所定量較大之光柵=EthTri ether)) or Fluorint (trade name). In this embodiment, H F E is used in order to make the global warming coefficient low and the odor coefficient to be zero from the viewpoint of the protection of earthworms. 9, the degree control system is the first control system 61 and the second pestle fll 糸, first 6 2. Among them, the first control system 6 uses the first liquid cooling second f: the projection optical system PL and the positioning system AL are "L = degree control. Management. The second control system 62 uses ί ί: ί: grating The machine 2 and the wafer machine 5 are the second control pair ~ the first control system 61 is independently temperature-controlled and managed. A And 'this second-degree control system is based on the amount of heat (temperature changes two ^ ^ ^ (one brother; / II: The projection optical system PL and positioning system AL inside are:-Degree control object 'Grating with larger calorific value than the above amount =

200305925 五、發明說明(16) 台2及晶圓機台5為第二溫度控制對象。 在第一控制系統6 1業經施加溫度調節之槽6 3内的冷媒 係經過泵64後分歧為循環系統C1與冷卻系統C2。其中, 循環系統C 1係順次循環定位系統AL及投影光學系統PL。 冷卻系統C 2係以蒸發器6 5加以冷卻。剛從泵6 4所排出後 之冷媒溫度係以感應器6 6加以檢測而輸出於控制器6 7。 關於循環系統C 1 ,投影光學系統PL係在鏡筒6 8之周圍 以螺旋狀加以配置之關係,由冷媒之溫度調節範圍設定 為較寬。對本實施例,在第4圖,冷媒係經介在鏡筒6 8之 周圍配置成螺旋狀之配管從上向下循環之結構,不限於 此也可使成為從下向上以螺旋狀使冷媒循環之結構。 又,在此循環系統C 1 ,係設檢測在投影光學系統PL加以 循環前之冷媒溫度的感應器6 9,其檢出結果係輸出於控 制器6 7。尚且,在本實施例,如上所述雖大略擴展至鏡 筒6 8周圍之全面加以配置螺旋狀之配管以進行投影光學 系統P L之溫調,本發明並非受限於此,也可採用在保持 投影光學系統PL之構件(凸緣2 3 )部分配置配管以進行溫 調的所謂凸緣溫調方式。 離軸系之定位系統AL雖係可採用雷射步進定位 LSA(Laser Step Alignment)方式、現場影像定位, FIA(Field Image Alignment)方式及雷射干涉定位 LIA(Laser Interferometric A 1 ignment)方式等。其 中,雷射步進定位方式係使He-Ne等之雷射光照射晶圓W 上之點列狀定位標識(a 1 i g n m e n t m a r k )用從其標識之繞200305925 V. Description of the invention (16) The second set and the wafer set set 5 are the second temperature control objects. The refrigerant system in the first control system 61 and the temperature-adjusted tank 63 is divided into a circulation system C1 and a cooling system C2 after passing through the pump 64. Among them, the cyclic system C 1 is a sequential cyclic positioning system AL and a projection optical system PL. The cooling system C 2 is cooled by an evaporator 65. The temperature of the refrigerant immediately after being discharged from the pump 64 is detected by the sensor 66 and output to the controller 67. Regarding the circulation system C 1, the projection optical system PL is arranged in a spiral shape around the lens barrel 68, and the temperature adjustment range of the refrigerant is set to be wide. In this embodiment, in FIG. 4, the refrigerant is a structure in which a spirally arranged pipe is circulated around the lens barrel 68 from the top to the bottom, and it is not limited to this. The refrigerant may be circulated in a spiral from bottom to top. structure. The circulation system C 1 is provided with a sensor 69 for detecting the refrigerant temperature before the projection optical system PL is circulated, and the detection result is output to the controller 67. Furthermore, in this embodiment, although it is roughly extended to the entire circumference of the lens barrel 68 as described above, a spiral-shaped pipe is arranged to perform the temperature adjustment of the projection optical system PL, the present invention is not limited to this, and it can also be used to maintain The so-called flange temperature adjustment method in which the components (the flanges 2 3) of the projection optical system PL are provided with pipes for temperature adjustment. The off-axis positioning system AL can use the Laser Step Alignment (LSA) method, field image positioning, FIA (Field Image Alignment) method, and Laser Interferometric A 1 ignment (LIA) method. . Among them, the laser step positioning method is to make the laser light of He-Ne and so on to illuminate the dot-shaped positioning mark (a 1 i g n m e n t m a r k) on the wafer W and use the winding around the mark.

10917pif ptd 第22頁 200305925 五、發明說明(17) 射或散亂的光加以檢測標識位置。現場影像定位方式係 以鹵素燈等光源之波長帶域幅度較寬的光加以照明,用 C D D照像機等所攝影之定位標識的影像資料經影像處理加 以計測標識位置。雷射干涉方式係在晶圓W上之繞射格子 狀的定位標識使在間距(p i t c h )方向以對照傾斜的兩個相 關光束(c 〇 h e r n e t b e a m )加以照射,使所發生之兩個繞射 光加以干涉,由其相位加以計測定位標識的位置。在此 係使用L S A方式,對循環系統C 1係在定位系統A L中,使冷 媒對定位光源加以循環,以進行溫度調節。對於循環方 式,例如與投影光學系統同樣,也可在收納光源之筐體 以螺旋狀加以配管。 尚且,在定位系統A L,不僅對定位光源,對收納定位 用光學系統之筐體也可使構成為使冷媒循環以實施溫度 調節的結構。又,並非在離軸系統,在經介投影光學系 統PL加以檢測晶圓W上之標識的通過光柵TTR( Through The Reticle)方式或通過透鏡TTL(Through The Lens)方 式也同樣,對定位光源或筐體也可使冷媒循環以進行溫 度調節。 在循環系統C1循環定位系統AL及投影光學系統PL後之 冷媒係環流於以上下兩段連通隔間之槽6 3的上室。 一方面,冷卻系統C 2之冷媒係在蒸發器6 3冷卻後分歧 為環流於槽6 3之上室的經路C 3與,向熱交換器7 0的經路 C 4。尚且,蒸發器6 5係由循環氣體冷媒之冷凍機7 3加以 冷卻。冷卻後之冷媒係由經路C 4在熱交換器7 0經熱交換10917pif ptd Page 22 200305925 V. Description of the invention (17) Detected or scattered light to detect the position of the mark. The on-site image positioning method is to illuminate the light with a wide wavelength band of a light source such as a halogen lamp. The image data of the positioning mark photographed by a CD camera or the like is processed by the image to measure the position of the mark. The laser interference method is a diffraction grid-shaped positioning mark on the wafer W, which irradiates two related beams (cohernetbeam) inclined in a contrast direction in the pitch direction, and irradiates the two diffracted light beams. Interference, the position of the bit mark is measured from its phase. In this system, the LSA method is used. The circulation system C1 is located in the positioning system AL, and the refrigerant circulates the positioning light source for temperature adjustment. For the circulation method, for example, similar to the projection optical system, the light source can also be piped in a spiral shape. In addition, in the positioning system A L, not only a positioning light source but also a housing housing an optical system for positioning may be configured to circulate a refrigerant to perform temperature adjustment. In addition, the off-axis system and the identification on the wafer W through the projection optical system PL are used to pass the grating TTR (Through The Reticle) method or the lens TTL (Through The Lens) method. The casing can also circulate the refrigerant for temperature adjustment. After the circulation system C1, the circulation positioning system AL and the projection optical system PL, the refrigerant system circulates in the upper chamber of the slot 63 in the upper and lower two communicating compartments. On the one hand, the refrigerant of the cooling system C 2 is divided into a path C 3 circulating in the chamber above the tank 63 and a path C 4 to the heat exchanger 70 after the evaporator 63 is cooled. Furthermore, the evaporator 65 is cooled by a refrigerator 7 3 which circulates a gas refrigerant. After cooling, the refrigerant is heat-exchanged in the heat exchanger 70 by the passage C 4

10917pif.ptd 第23頁 200305925 五、發明說明(18) 使用後,環流於槽6 3之上室重新加以冷卻。 在槽6 3之下室係配置由控制器6 7所控制之加熱器7 1 , 控制器6 7係藉由依據感應器6 6、6 9之檢出結果加以控制 加熱器7 1之驅動,經介冷媒使定位系統A L及投影光學系 統PL之溫度,控制(管理)於例如在23 °C ± 0· 01 °C。尚 且,第一控制系統6 1係使由上述加熱器7 1加以溫調之冷 媒對各溫度控制對象按同一流量加以循環。 對第二控制系統6 2,在熱交換器7 0經冷卻的第二液體 之冷媒,經泵74後分歧為循環系統C5與循環系統C6。其 中,循環系統C 5係循環光栅機台2,循環系統C 6係循環晶 圓機台5。尚且,在第二控制系統6 2之冷媒係不環流於槽 6 3構成為在封閉系統循環之結構。 對循環系統C 5,在泵7 4之下游位置係設加熱器7 5之同 時,並設溫度感應器(第二檢測手段)7 6 a、7 6 b,其中, 溫度感應器7 6 a係檢測在光柵機台2循環前之冷媒溫度, 溫度感應^§ 7 6 b係檢測在光拇機台2循壞後之冷媒溫度^ 溫度感應器7 6 a、7 6 b之檢出結果係輸出於控制器7 7。控 制器7 7係將輸入之溫度感應器7 6 a、7 6 b之檢出結果,加 以單純平均,依據所得之冷媒溫度,加以控制加熱器7 5 之驅動,以使光柵機台2之溫度控制(管理)於例如2 3 °C 土 0 . 1 〇C 。 尚且,在本實施例,雖係構成為使在熱交換器7 0冷卻 之冷媒送至泵7 4加以循環之結構,在熱交換器7 0之壓力 損失較大之場合,係可構成為使泵7 4配置於熱交換器7 010917pif.ptd Page 23 200305925 V. Description of the invention (18) After use, the chamber circulating in the upper part of the tank 6 3 is cooled again. Below the tank 63, a heater 7 1 controlled by the controller 67 is arranged in the room. The controller 67 is configured to control the driving of the heater 7 1 according to the detection results of the sensors 6 6 and 69. The temperature of the positioning system AL and the projection optical system PL is controlled (managed) at, for example, 23 ° C ± 0 · 01 ° C via a refrigerant. In addition, the first control system 61 circulates the refrigerant whose temperature is adjusted by the heater 71 to each temperature control target at the same flow rate. For the second control system 62, the refrigerant of the cooled second liquid in the heat exchanger 70 is divided into a circulation system C5 and a circulation system C6 after being pumped 74. Among them, the circulation system C 5 is a circular grating machine 2 and the circulation system C 6 is a circular crystal machine 5. In addition, the refrigerant system in the second control system 62 does not circulate in the tank 63 and is configured to circulate in a closed system. For the circulation system C 5, a heater 7 5 is installed downstream of the pump 7 4, and temperature sensors (second detection means) 7 6 a and 7 6 b are also provided. Among them, the temperature sensor 7 6 a is Detects the refrigerant temperature before the grating machine 2 cycle, temperature sensing ^ § 7 6 b is the detection of the refrigerant temperature after the thumb machine 2 cycle is broken ^ The detection results of the temperature sensors 7 6 a, 7 6 b are output于 Controller7 7. The controller 7 7 is a simple average of the detection results of the input temperature sensors 7 6 a, 7 6 b, and controls the driving of the heater 7 5 according to the obtained refrigerant temperature, so that the temperature of the grating machine 2 Controlled (managed) at, for example, 2 3 ° C to 0.1 ° C. Furthermore, in this embodiment, although the structure is configured such that the refrigerant cooled in the heat exchanger 70 is sent to the pump 74 and circulated, when the pressure loss of the heat exchanger 70 is large, it may be configured so that Pump 7 4 is located in heat exchanger 7 0

10917pif ptd 第24頁 200305925 五、發明說明(19) 之上游,然而使循環系統C 5、C 6之返回冷媒(循環各機台 2、5後之冷媒)的合流地點在比泵7 4更上游位置之結構。 關於上述溫度感應器7 6 a、7 6 b之配置位置,對任何感 應器,係以盡量接近溫度控制對象(光栅機台2,以更正 確說明時,為後述之驅動光栅機台2之馬達)配置為宜。 但,在配置上受限制,或由馬達之磁力影響等不能接近 溫度控制對象的場合,只要在不受從外部之熱影響的範 圍内(場所),係可設在從溫度控制對象離開某程度之位 置。 又關於各感應器與溫度控制對象間之配置間隔,在兩 感應器間係以大略同程度之配置間隔(使感應器7 6 a與光 柵機台2之間隔,感應器7 6 b與光栅機台2之間隔以大略同 一間隔)為宜,只要在上述範圍内(在不受從外部之熱影 響的範圍内)各感應器之配置並非受此限制。 以下,更在詳述對於光柵機台2之溫度控制系統。 如第5圖所示,循環系統C 5係分歧為複數分歧流路之 循環系統C7、C7,循環系統C8、C8,循環系統C9及循環 系統C 1 0等。其中,循環系統C 7、C7係各循環Y線性馬達 1 5之活動元件2 1、2 1加以溫度控制。循環系統C 8、C 8係 各循環修整馬達7 2、7 2加以溫度控制。循環系統C 9係循 環Y音圈馬達1 7 Y加以溫度控制。循環系統C 1 0係循環X音 圈馬達1 7 X加以溫度控制。 在各循環系統C 7〜C 1 0,於各馬達之上游位置係各設調 節冷媒流量之閥(v a 1 u e )(調節手段)8 0。又,在循環系統10917pif ptd Page 24 200305925 V. Description of the invention (19), but the confluence point of the return refrigerant of the circulation system C 5 and C 6 (refrigerant after each cycle 2 and 5) is more upstream than the pump 7 4 The structure of the location. Regarding the arrangement positions of the above temperature sensors 7 6 a and 7 6 b, for any sensor, it is to be as close as possible to the temperature control object (grating machine 2). For a more accurate description, it is the motor for driving the grating machine 2 described later. ) Configuration is appropriate. However, if the configuration is restricted, or the temperature control object cannot be approached due to the magnetic force of the motor, as long as it is not affected by the heat from the outside (place), it can be set to leave the temperature control object to a certain extent. Its location. Regarding the arrangement interval between each sensor and the temperature control object, the arrangement interval between the two sensors is approximately the same (the interval between the sensor 7 6 a and the grating machine 2, and the sensor 7 6 b and the grating machine The interval between the stations 2 should be approximately the same), as long as the configuration of each sensor is not limited within the above range (within the range not affected by external heat). Hereinafter, the temperature control system for the grating machine 2 will be described in more detail. As shown in Fig. 5, the circulatory system C 5 is a cyclic system C7, C7, a cyclic system C8, C8, a cyclic system C9, and a cyclic system C 1 0, which are branched into a plurality of branched flow paths. Among them, the circulation systems C 7 and C 7 are temperature-controllable by the movable elements 2 1 and 21 of each linear Y linear motor 15. Circulation system C 8, C 8 series Each cycle trims the motor 7 2, 7 2 for temperature control. The circulation system C 9 is a loop Y voice coil motor 1 7 Y for temperature control. The circulation system C 1 0 is a circulation X voice coil motor 17 X with temperature control. In each of the circulation systems C 7 to C 1 0, a valve (v a 1 u e) (adjusting means) 80 for adjusting the refrigerant flow rate is provided at an upstream position of each motor. Again, in the circulatory system

10917pi f.ptd 第25頁 200305925 五、發明說明(20) C7 之 - 方,於活動元件2 1之 近傍 係 設 溫 度 感應 器(第- -溫 度 檢 測 手段)7 6 a與溫度感應 器(第二溫度檢測手段) 76b ° 其 中 溫 度感應器(第一溫度檢測手段)1 76 a係檢測在活動元 件2 1 循 環前之冷媒溫度。溫 度感 應 器 (第二溫度檢測手 段)7 6 b 係檢測在活動元件2 1 循環 後 之 冷 媒 溫度 〇 在循環系統C 6,於泵7 4之下游位置係設加熱器7 8之同 時 1 並 設溫度感應器(第一檢測手段)7 9 a ’ 、79b ,其 中 溫 度 感 應 器7 9 a係檢測在晶圓機台5 循 環 前 之 冷媒 溫度 溫 度 感 應 器7 9 b係檢測在晶圓機台5 循 環 後 之 冷媒 溫度 溫 度 感 應 器7 9 a、7 9 b之檢出結 果係 輸 出 於 控 制器 ΊΊ 〇 控 制 器 77 係 將輸入之溫度感應器' 79a 、79b 之 檢 出結 果加 以 平 均 依 據所得之冷媒溫度加 以控 制 加 埶 器, 78之 驅動 j 以 使 晶 圓 機台5之溫度,控制( 管理 )於例如2 3 °C 土 0. 1 °C 〇 在 循 環 系統C5、C6循環機台 2、5 後 之 冷 媒 ,係 在熱 交 換 器 冷 卻 後加以合流。 關於上述溫度感應器7 9 a 、7 9 b之配置位置 ,係與上述 溫 度 感 應器7 6 a、7 9 b之場合 同樣 對 任 何 感應 器, 係 以 盡 量 接 近溫度控制對象(晶圓機台5 以 更 正確 說明 時 為 驅 動 晶圓機台5之馬達)配 置為 宜 〇 但 在 配置 上受 限 制 5 或 由馬達之磁力影響等 不能 接 近 溫 度 控制 對象 的 場 合 只 要在不受從外部之熱 影響 的 範 圍 内丨 (場所), 係 可 設 在 從 溫度控制對象離開某 程度 之 位 置 〇 對於感應器79a、79b之g 亿置關係 ,係可言及與關於感 應 器 76 a、76b之配置所述之 同等 内 容 在 此將 其記 述 從10917pi f.ptd Page 25 200305925 V. Description of the invention (20) C7-square, a temperature sensor (the first-temperature detection means) 7 6 a and a temperature sensor (second Temperature detection means) 76b ° Among them, the temperature sensor (first temperature detection means) 1 76 a is used to detect the refrigerant temperature before the movable element 2 1 is circulated. The temperature sensor (second temperature detection means) 7 6 b detects the refrigerant temperature after the movable element 2 1 is circulated. 0 In the circulation system C 6, a heater 7 8 is installed at the downstream position of the pump 7 4 and 1 is installed in parallel. Temperature sensor (first detection means) 7 9 a ', 79b, among which the temperature sensor 7 9 a is used to detect the refrigerant temperature and temperature sensor 7 9 b before it is circulated on the wafer machine 5 The detection results of the refrigerant temperature and temperature sensors 7 9 a and 7 9 b after the cycle are output to the controller ΊΊ Controller 77 is to average the detection results of the input temperature sensors' 79a and 79b based on the obtained refrigerant The temperature is controlled by the heater, the drive of 78, so that the temperature of the wafer machine 5 is controlled (managed) at, for example, 2 3 ° C soil 0.1 ° C 〇 in the circulation system C5, C6 cycle machine 2, 5 The subsequent refrigerants are combined after the heat exchanger is cooled. The positions of the temperature sensors 7 9 a and 7 9 b are the same as those of the temperature sensors 7 6 a and 7 9 b. For any sensor, they should be as close as possible to the temperature control object (wafer machine table 5). For a more accurate explanation, it is appropriate to configure the motor that drives the wafer machine 5). However, if the configuration is restricted by 5 or the magnetic force of the motor cannot reach the temperature control object, it is only required to be protected from external heat. Within the range 丨 (place), it can be set at a position away from the temperature control object. The relationship between the sensors 79a and 79b is 100 million, which is equivalent to that described for the configuration of the sensors 76a and 76b. The content here describes it from

10917pif ptd 第26頁 200305925 五、發明說明(21) 略。 接下來,詳述對晶圓機台5之溫度控制系統。 如第6圖所示,循環系統C 6係分歧為循環系統C 1 1 、 C 1 1與循環系統1 2。其中,循環系統C 1 1 、C 1 1係各循環線 性馬達3 3之活動元件3 6、3 6加以溫度控制。循環系統C 1 2 係循環X線性馬達3 5加以溫度控制。在各循環系統 C 1 1〜C 1 2,於各馬達之上游位置,係各設調節冷媒流量之 閥8 4。又,在循環系統C 1 1之一方,係設上述之感應器 7 9 a、7 9 b。其中,感應器7 9 a係檢測在活動元件3 6循環前 之冷媒溫度,感應器7 9 b係檢測在活動元件3 6循環後之冷 媒溫度。 尚且,對實施晶圓機台5 (試樣台ST )之水平調整(及焦 點調整)的三個音圈馬達8 1〜8 3,也配管設循環系統C 1 3〜C 1 5,在各循環系統,於馬達之上游位置係各設調節冷媒 流量之閥8 5,音圈馬達8 1〜8 3之驅動頻率係比線性馬達 3 3、3 5較少,又驅動時之發熱量也較小之關係,此等循 環系統C 1 3〜C 1 5係由將第一控制系統6 1之循環系統C 1所分 歧的冷媒加以溫度控制。不限於此音圈馬達8 1〜8 3,對驅 動時之發熱量較小之馬達(例如上述之修整馬達7 2或X音 圈馬達1 7 X等)進行溫度管理之循環系統,也可由將第一 控制系統6 1之循環系統C 1所分歧的冷媒進行溫度控制。 尚且,對上述溫度感應器66、69、76a、76b、79a、 7 9 b,在本實施例雖係使用可檢測± 0 . 0 1 X:之精度者,在 第二控制系統6 2 ,光柵機台2及晶圓機台5所必要之溫度10917pif ptd Page 26 200305925 V. Description of Invention (21) Omitted. Next, the temperature control system for the wafer table 5 will be described in detail. As shown in FIG. 6, the circulatory system C 6 is divided into a cyclic system C 1 1, C 1 1 and a circulatory system 12. Among them, the circulation systems C 1 1 and C 1 1 are the moving elements 3 6 and 3 6 of each of the circulating linear motors 3 3 for temperature control. The circulation system C 1 2 is a circulation X linear motor 3 5 and is temperature-controlled. In each of the circulation systems C 1 1 to C 1 2, at the upstream position of each motor, a valve 8 4 for regulating the refrigerant flow rate is provided. One of the circulation systems C 1 1 is provided with the above-mentioned sensors 7 9 a and 7 9 b. Among them, the sensor 7 9 a detects the refrigerant temperature before the movable element 36 cycles, and the sensor 7 9 b detects the refrigerant temperature after the movable element 36 cycles. Furthermore, the three voice coil motors 8 1 to 8 3 that perform the level adjustment (and focus adjustment) of the wafer machine table 5 (sample table ST) are also provided with circulation systems C 1 3 to C 1 5. Circulation system, each valve upstream of the motor is set to adjust the refrigerant flow valve 8 5, the voice coil motors 8 1 ~ 8 3 drive frequency is less than the linear motor 3 3, 3 5, and the heat generated when driving is also relatively low In a small relationship, these circulation systems C 1 3 to C 1 5 are temperature-controlled by the refrigerant divided by the circulation system C 1 of the first control system 61. It is not limited to the voice coil motors 8 1 to 83, and a circulation system for temperature management of a motor with a small amount of heat during driving (such as the trimming motor 7 2 or X voice coil motor 1 7 X, etc.) can also be used. The refrigerant in the circulation system C 1 of the first control system 61 performs temperature control. Moreover, for the above temperature sensors 66, 69, 76a, 76b, 79a, and 7 9 b, although this embodiment uses an accuracy that can detect ± 0. 0 1 X :, in the second control system 6 2, grating Necessary temperature for machine 2 and wafer machine 5

10917pif.ptd 第27頁 200305925 五、發明說明(22) 控制精度為± 0 . 1 °C之關係,關於溫度感應器7 6 a、7 6 b、 7 9 a、7 9 b係可使用具有依據此精度之檢測能力的溫度感 應器。又,關於由溫度感應器之溫度計測的取樣 (s a m p 1 i n g )間隔,例如,控制精度較嚴格之場合或溫度 變化量較大的場合,係以使取樣間隔為較短等,以依據 所要求之溫度控制精度或控制對象之投影光學系統P L、 機台2、5的溫度變化量(發熱量)加以變更為宜。 又,各溫度感應器之配置,在本實施例,雖係設置於 流路(配管)之内部以使直接計測冷媒溫度,其他,也可 構成使溫度感應器之檢測部配置於從管壁面離開之位置 (在管之斷面的中央附近使檢測部懸吊之狀態)的結構。 此種場合,感應器之檢測部與管壁成為非接觸之關係, 較不易受經介管壁面的外部環境之不良影響。又,溫度 感應器係可構成為可加以替換。此種場合,可採用,在 管設插入口,以構成可經介插入口能加以裝卸之結構 或,構成由焊接使溫度感應器固定於管,可使包含溫度 感應器的一部分管能加以替換之結構。更且,也可構成 使溫度感應器設置於管之外表面,以經介管加以計測冷 媒溫度之結構。 在上述構成之曝光裝置1 ,於曝光時由從照明光學系 統I U之曝光用照明光以均一照度照明光栅R上之所定短形 狀之照明區域。光栅R使此照明區域掃描於Y方向時,晶 圓W係使關於此照明區域與投影光學系統P L所配對之曝光 區域以同步掃描。藉此,透過光栅R之圖案區域的照明光10917pif.ptd Page 27 200305925 V. Description of the invention (22) The relationship between the control accuracy is ± 0.1 ° C, and the temperature sensors 7 6 a, 7 6 b, 7 9 a, 7 9 b can be used with a basis Temperature sensor with detection capability of this accuracy. The sampling interval (samp 1 ing) measured by the temperature sensor of the temperature sensor, for example, when the control accuracy is strict or when the temperature variation is large, the sampling interval is made shorter, etc., in accordance with the requirements. It is advisable to change the temperature control accuracy of the control target's projection optical system PL, the temperature change amount (heat generation amount) of the machines 2 and 5. In addition, although the arrangement of each temperature sensor is arranged inside the flow path (piping) in this embodiment to directly measure the temperature of the refrigerant, it is also possible to configure the detection section of the temperature sensor to be disposed away from the tube wall surface. The structure (the state where the detection unit is suspended near the center of the cross section of the tube). In this case, the detection portion of the sensor is in a non-contact relationship with the tube wall, and is less likely to be adversely affected by the external environment through the wall surface of the tube. Further, the temperature sensor system may be configured to be replaceable. In this case, an insertion port may be provided in the pipe to form a structure that can be attached and detached through the insertion port or a structure in which the temperature sensor is fixed to the pipe by welding, so that a part of the pipe including the temperature sensor can be replaced. The structure. Furthermore, a structure may be adopted in which a temperature sensor is provided on the outer surface of the tube, and the temperature of the refrigerant is measured through a pipe. In the exposure device 1 configured as described above, a predetermined short-shaped illumination area on the grating R is illuminated by the exposure illumination light from the illumination optical system I U with uniform illumination at the time of exposure. When the raster R scans the illumination area in the Y direction, the crystal circle W scans the exposure area paired with the projection optical system P L to synchronize scanning. Thereby, the illumination light passing through the pattern area of the grating R

10917pif ptd 第28頁 200305925 五、發明說明(23) 由投影光學系統P L縮小於1 / 4倍,照射於塗布光阻之晶圓 W上。然後,在晶圓W上之曝光區域,以逐次轉移光柵R之 圖案,以一次掃描使光柵R上之圖案區域的全面轉移於晶 圓W上之拍攝區域。 在光栅粗動機台1 6例如移動於+ Y方向之場合藉由定 子2 0移動於-Y方向,可加以保存動量,能抵消隨光柵粗 動機台1 6之移動的反作用力之同時,可防止重心位置之 變化。又,此時藉由修整馬達2 7之動作,抵抗動子2 1與 定子20之偶聯(coupling),可使定子20到達所定位置。 關於此等之一連曝光處理,由照明光在投影光學系統 PL產生熱量(由照明光之照射在投影光學系統PL之熱量吸 收)、由定位光在定位系統A L產生熱量(由定位光之照射 在定位光學系統之熱量吸收)之同時,隨機台2、5之驅動 從各馬達產生熱量。對第一控制系統6 1 ,控制器6 7係依 據溫度感應器6 6、6 9之檢出結果,加以設定使冷媒循環 時之條件(第一循環條件),藉由控制加熱器7 1之驅動, 以使投影光學系統PL及定位系統AL在± 0. 0 1 °C之範圍加 以溫度控制。又,對第二控制系統6 2,控制器7 7係依據 溫度感應器7 6 a、7 6 b、7 9 a、7 9 b之檢出結果,加以設定 使冷媒循環時之條件(第二循環條件),藉由控制加熱器 7 5、7 8之驅動,以使光栅機台2及晶圓機台5在± 0 . 1 °C之 範圍各加以溫度控制。 將此加以詳述時,首先對光柵機台2,控制器7 7係將 溫度感應器7 6 a、7 6 b所檢出之冷媒溫度加以單純平均,10917pif ptd Page 28 200305925 V. Description of the invention (23) The projection optical system P L is reduced to 1/4 times and irradiated onto the wafer W coated with photoresist. Then, in the exposed area on the wafer W, the pattern of the grating R is sequentially transferred, and the entire pattern area on the grating R is transferred to the photographed area on the wafer W in one scan. In the case where the coarse grating stage 16 is moved in the + Y direction, for example, by moving the stator 20 in the -Y direction, the momentum can be saved, and the reaction force accompanying the movement of the coarse grating stage 16 can be cancelled, and it can be prevented. Changes in the position of the center of gravity. At this time, by trimming the action of the motor 27, the coupling between the mover 21 and the stator 20 is resisted, so that the stator 20 can reach a predetermined position. Regarding one of these consecutive exposure processes, heat is generated by the illumination light in the projection optical system PL (absorption by the heat of the illumination light on the projection optical system PL), and heat is generated by the positioning light in the positioning system AL (in While locating the heat absorption of the optical system), the drives of the random tables 2 and 5 generate heat from each motor. For the first control system 6 1, the controller 6 7 sets the conditions for circulating the refrigerant (the first cycle condition) according to the detection results of the temperature sensors 6 6 and 6 9, and controls the heater 7 1 Driven so that the projection optical system PL and the positioning system AL are temperature controlled in the range of ± 0. 1 ° C. The second control system 62 and the controller 7 7 are set based on the detection results of the temperature sensors 7 6 a, 7 6 b, 7 9 a, and 7 9 b. Cycle conditions), by controlling the driving of the heaters 7, 5, 7 so that the grating machine 2 and the wafer machine 5 are temperature-controlled in the range of ± 0.1 ° C. To describe this in detail, first of all, the grating machine 2 and the controller 7 7 simply average the refrigerant temperatures detected by the temperature sensors 7 6 a and 7 6 b.

10917pif.ptd 第29頁 200305925 五、發明說明(24) 依據所得之冷媒溫度加以調節、管理第一溫度管理部之 加熱器7 5的驅動。在此,溫度感應器7 6 a、7 6 b係設在循 環於驅動量最多,發熱量最大之Y線性馬達1 5之活動元件 2 1的循環系統C 7,對其他循環系統C 8〜C 1 0係以循環系統 C 7為基準加以溫度控制。因而,在本實施例,係預先以 實驗或模擬等求製程與最適冷媒流量的相互關係加以記 憶,依據所記憶之資訊,對各製程加以調整各循環系統 C7〜 C 1 0之閥8 0。10917pif.ptd Page 29 200305925 V. Description of the invention (24) Adjust and manage the driving of the heater 75 of the first temperature management unit according to the obtained refrigerant temperature. Here, the temperature sensors 7 6 a and 7 6 b are circulated in the circulatory system C 7 which is circulated in the Y linear motor 15 which has the most driving power and the greatest heat generation, and the other circulatory systems C 8 ~ C. The 10 is temperature controlled based on the circulatory system C7. Therefore, in this embodiment, the correlation between the manufacturing process and the optimum refrigerant flow rate is memorized in advance through experiments or simulations, and the valves 80 of each circulation system C7 to C 1 0 are adjusted for each process based on the stored information.

在此,由製程所必要考慮之發熱要因係可舉在各馬達 1 5、1 7 X、1 7 Y、7 2之種種驅動狀態,即各馬達之驅動量 或速度、迴轉數,更且與其他馬達加以組合驅動場合之 狀態等。因而,藉由對發熱量(或驅動量)較小之音圈馬 達1 7X 、1 7 Y以少冷媒流量,對發熱量(或驅動量)較大之Y線性 馬達1 5或修整馬達7 2以多之冷媒流量加以調節閥8 0時, 可依據各馬達之輸出(發熱)能適當加以溫度控制。尚 且,對閥8 0之調整方法,係可採用,依據所記憶之資訊 對各製程由作業者加以調整之方法或,設閥8 0之驅動機 構,依據所記憶之資訊對各製程由控制器7 7加以調整此 驅動機構之方法等。尚且,對各製程加以調整之對象並 不限於流量,也可使冷媒之溫度(由加熱器所設定之溫 度)由各製程加以變化設定值。 同樣,對晶圓機台5 ,控制器7 7係將溫度感應器7 9 a、Here, the heating factors that must be considered by the manufacturing process can be listed in various driving states of the motors 15, 17 X, 17 Y, and 72, that is, the driving amount or speed of each motor, the number of revolutions, and more Other motors are combined to drive the state. Therefore, by using the voice coil motors 1 7X and 1 7 Y with a small amount of heat (or drive), the Y linear motor 15 or the trimming motor 7 2 with a large amount of heat (or drive) is used with a small refrigerant flow. When adjusting the valve 80 with a large amount of refrigerant flow, the temperature can be appropriately controlled according to the output (heat generation) of each motor. Moreover, the method for adjusting the valve 80 can be a method in which each process is adjusted by the operator based on the memorized information or a drive mechanism for the valve 80 is set up by the controller based on the memorized information. 7 7 Adjust the method of this drive mechanism, etc. In addition, the adjustment target of each process is not limited to the flow rate, and the temperature of the refrigerant (temperature set by the heater) can be changed by each process to a set value. Similarly, for the wafer machine 5, the controller 7 7 is a temperature sensor 7 9 a,

10917pi f.ptd 第30頁 200305925 五、發明說明(25) 7 9 b所檢出之冷媒溫度加以單純平均,依據所得之冷媒溫 度加以調節、管理第二溫度管理部之加熱器7 8的驅動。 在此,溫度感應器7 9 a、7 9 b係設在循環於驅動量最多, 發熱量最大之線性馬達3 3之活動元件3 6的循環系統C 1 1 , 對其他循環系統1 2係以循環系統C 1 1為基準加以溫度控 制,因而,在本實施例,係預先以實驗或模擬等求製程 與最適合的冷媒流量之相互關係加以記憶依據所記憶之 資訊 ,由各製程加以調整各循環系統C 1 1、C 1 2之閥8 5。對閥 8 5之調整方法,與光柵機台2之場合同樣,係可採用手動 或自動之方法。 尚且,在晶圓機台5所設之音圈馬達8 1〜8 3之溫度係發 熱量微小之關係雖由第一控制系統6 1之循環系統C 1 3 〜C 1 5加以控制,此種場合也預先以實驗或模擬等求製程 與最適合之冷媒流量的相互關係加以記憶,依據所記憶 之資訊,對各製程之各循環系統C 1 3〜C 1 5之閥8 5以由作業 者之手動調整或由控制器6 7之自動調整加以流量調整。 如此在本實施例,在第一控制系統6 1與第二控制系統 6 2設定冷媒溫度時之溫度範圍具有相異設定能力之關 係,對其所要求之溫度控制精度相異之投影光學系統P L 與機台2、5,也可以各獨立加以控制·管理溫度能按照 各機器之發熱量加以設定最適合之冷卻條件。因此,可 抑制在未能充分加以溫度控制之場合所發生之基線變動 能抑止重疊精度之惡化。10917pi f.ptd Page 30 200305925 V. Description of the invention (25) 7 9 b The temperature of the refrigerant detected is simply averaged, and the drive of the heater 78 of the second temperature management unit is adjusted and managed based on the obtained refrigerant temperature. Here, the temperature sensors 7 9 a and 7 9 b are circulated in the circulatory system C 1 1 which is circulated in the linear motor 3 3 which has the most driving power and the greatest heat generation. Circulation system C 1 1 is used as a reference for temperature control. Therefore, in this embodiment, the relationship between the process and the most suitable refrigerant flow is obtained in advance by experiments or simulations, and the information is memorized based on the stored information. Valve 8 5 of the circulation system C 1 1 and C 1 2. The method of adjusting the valve 8 5 is the same as that of the grating machine 2, and it can be performed manually or automatically. In addition, the relationship between the temperature of the voice coil motors 8 1 to 8 3 provided on the wafer machine 5 is small and the amount of heat generation is controlled by the circulation system C 1 3 to C 1 5 of the first control system 61. In the occasion, the relationship between the process and the most suitable refrigerant flow rate is memorized in advance through experiments or simulations. Based on the stored information, the valves 8 5 of each cycle system C 1 3 ~ C 1 5 of each process are used by the operator. Manual adjustment or flow adjustment by the automatic adjustment of the controller 67. As such, in this embodiment, the temperature range when the refrigerant temperature is set by the first control system 61 and the second control system 62 has a relationship of different setting capabilities, and the projection optical system PL having a different temperature control accuracy required by them It is also possible to control and manage the temperature independently of the machines 2 and 5, and the most suitable cooling conditions can be set according to the heat output of each machine. Therefore, it is possible to suppress the baseline variation that occurs when the temperature is not sufficiently controlled, and to suppress the deterioration of the overlapping accuracy.

10917pif.ptd 第31頁 200305925 五、發明說明(26) 又,在本實施例,對光柵機台2及晶圓機台5,並非對 全部馬達,而對發熱量最大之馬達加以計測冷媒溫度, 以此冷媒溫度為基準,對其他馬達之循環系統的溫度加 以控制之關係,不必要在各馬達設溫度感應器,可加以 實現裝置之小型化、低價格化。 可是,各設在光栅機台2及晶圓機台5之上述各馬達所 流動之冷媒,係由同一之第二控制系統6 2加以溫度控 制。管理之關係,對各馬達之冷媒的入口側溫度(循環各 馬達前之冷媒溫度)係不受馬達之影響雖為同一温度,但 對各馬達之冷媒的出口侧溫度(流過各馬達後之冷媒溫 度)係按照個個馬達之發熱程度而各馬達為相異。因此, 循環在各馬達之冷媒平均溫度(在馬達之入口側與出口側 之冷媒的平均溫度),對任何馬達也要使成為一定之所期 望值時,各馬達之出口側的冷媒溫度對任何馬達都需要 控制成為一定值。因此,為進行更高精度之溫度控制, 設置測定各馬達之至少在出口側的冷媒溫度之溫度感應 器(出口側3溫度感應器)(測定入口側之溫度的溫度感應 器係以代表的對發熱量最大之馬達僅設一個),為使在各 馬達之冷媒的出口溫度成為一定值,也可構成為使循環 在各馬達之冷媒流量由個個馬達各所對應之閥加以調整 之結構。設定此項流量時,係在預先盡量以嚴格之曝光 條件(例如曝光拍攝數較多,機台之動作較多的條件)驅 動(r u η n i n g )機台時之狀態下,或,以所使用之典型曝光 條件(機台驅動狀態)加以驅動機台時之狀態下,以使上10917pif.ptd Page 31 200305925 V. Description of the Invention (26) In this embodiment, the grating machine 2 and the wafer machine 5 are not all the motors, but the motor with the largest amount of heat is measured to measure the refrigerant temperature. Based on the refrigerant temperature as a reference, the temperature of the circulation system of other motors is controlled. It is not necessary to install a temperature sensor in each motor, and the device can be miniaturized and reduced in price. However, the refrigerant flowing through the motors provided in the grating table 2 and the wafer table 5 is temperature controlled by the same second control system 62. The relationship between management, the temperature of the inlet side of the refrigerant of each motor (refrigerant temperature before circulating each motor) is the same temperature without being affected by the motor, but the temperature of the outlet side of the refrigerant of each motor (after passing through each motor) Refrigerant temperature) is different for each motor according to the degree of heating of each motor. Therefore, when the average temperature of the refrigerant circulating in each motor (the average temperature of the refrigerant at the inlet side and the outlet side of the motor) is set to a certain desired value for any motor, the refrigerant temperature at the outlet side of each motor is Both need to be controlled to a certain value. Therefore, for more accurate temperature control, a temperature sensor (3 temperature sensor on the outlet side) that measures the temperature of the refrigerant at least on the outlet side of each motor (a temperature sensor that measures the temperature on the inlet side is provided as a representative pair) There is only one motor with the largest amount of heat). In order to keep the outlet temperature of the refrigerant in each motor to a fixed value, the refrigerant flow rate circulating in each motor can be adjusted by the valve corresponding to each motor. When setting this flow rate, it is in a state where the machine is driven (ru η ning) in advance as strictly as possible under strict exposure conditions (such as the conditions of a large number of exposure shots and a large number of machine actions), or, according to the used The typical exposure conditions (machine driving state) are under the state when the machine is driven so that the upper

10917pif ptd 第32頁 200305925 五、發明說明(27) 述出口溫度成為一定值之方式,加以設定循環在各馬達 之冷媒流量為宜。 尚且,在空間或價格上容許之下,也可在各馬達設置 測定馬達入口側之冷媒溫度的溫度感應器。 尚且,半導體元件等之微細元件係如第7圖所示,經 過,進行微細二件之機能·性能設計之階段2 01 ,依據此 設計階段加以製作光柵R之階段2 0 2,由矽材料製造晶圓W 之階段2 0 3,由上述實施例之投影曝光裝置1使光柵R之圖 案投影曝光於晶圓W,使此晶圓W顯影之曝光處理階段 2 0 4,元件組立階段(包含切割製程、結合製程、組裝製 程)2 0 5,檢查階段2 0 6等加以製造。 又,在上述實施例雖係構成以預先求製程與最適合之 冷媒流量的相互關係加以記憶,再依據所記憶之資訊, 以各製程加以調整各循環系統之閥的結構方式,此種方 法以外,例如也可以每複數馬達設置溫度感應器之同 時,設置算出在複數馬達間之發熱量比的計算手段,按 照依據檢出之冷媒溫度所算出之發熱量比加以調節在馬 達加以循環之冷媒流量。 第8圖係表示本發明之曝光裝置之第二實施例。在此 圖與第1圖至第7圖所示之第一實施例的構成元件同一之 元件係附同一符號,將其說明及圖示加以簡略化。 如第8圖所示,在本實施例,由第一控制系統6 1之循 環系統C 1係以投影光學系統與定位系統(即已述之晶圓機 台5之水平調整系統)為溫度控制對象,由第二控制系統10917pif ptd Page 32 200305925 V. Description of the invention (27) The way in which the outlet temperature becomes a certain value, it is appropriate to set the refrigerant flow rate circulating in each motor. In addition, as long as space or price allowable, a temperature sensor for measuring the temperature of the refrigerant at the inlet side of the motor may be provided for each motor. Moreover, as shown in FIG. 7, the micro-elements such as the semiconductor element pass through the stage 2 01 of designing the function and performance of the two micro-pieces. Based on this design stage, the stage R 2 2 of the grating R is manufactured from silicon material. In the stage 2 of wafer W, the projection exposure device 1 of the above embodiment is used to project and expose the pattern of the grating R onto the wafer W, and the exposure processing stage of developing the wafer W is stage 204. The component assembly stage (including cutting (Manufacturing process, combination process, assembly process) 205, inspection stage 206 and so on. In addition, although the foregoing embodiment is configured to memorize the relationship between the manufacturing process and the most suitable refrigerant flow rate in advance, and then adjust the structure of the valves of each circulatory system in each process based on the stored information, this method is other than this method For example, it is also possible to set a temperature sensor for each of the motors, and set a calculation method for calculating the heat generation ratio between the plurality of motors, and adjust the refrigerant flow rate circulated in the motor according to the heat generation ratio calculated based on the detected refrigerant temperature. . Fig. 8 shows a second embodiment of the exposure apparatus of the present invention. Here, the same components as those in the first embodiment shown in Figs. 1 to 7 are assigned the same reference numerals, and the description and illustration thereof are simplified. As shown in FIG. 8, in this embodiment, the circulation system C 1 of the first control system 61 uses the projection optical system and the positioning system (that is, the level adjustment system of the wafer machine 5 described above) as the temperature control. Object by the second control system

10917pif.ptd 第33頁 200305925 五、發明說明(28) 6 2之循環系統C 5係以光柵機台2為溫度控制對象,與第 一、第二控制系統6 1 、6 2以獨立所設的第三控制系統8 6 之循環系統C 6係以晶圓機台5為溫度控制對象。尚且,在 第8圖,具有與第4圖所示之蒸發器6 5、加熱器7 1同等機 能者係以溫度調節器8 7加以簡略化。同樣,具有與第4圖 所示之熱交換器7 0、加熱器7 5、7 8同等機能者係以溫度 調節器8 8、8 9加以簡略圖示。又,在第4圖對機台2、5雖 係各配置兩個溫度感應器76a、76b、及79a、79b,在第8 圖係以溫度感應器7 6、7 9為代表加以圖示。 關於此溫度感應器7 6、7 9,如上述第一實施例,也可 在第二控制系統6 2、第三控制系統8 6各所控制之複數馬 達中,對各控制系統加以選定發熱量最大之馬達,對所 選定之各馬達各設置(各馬達之入口側與出口側之兩地 點)溫度感應器,依據此等溫度感應器加以進行與上述第 一實施例所述之同樣的冷媒溫度控制。 又,如在上述第一實施例之變形例所述,也可各對在 第二控制系統6 2加以溫度控制之複數馬達,及在第三控 制系統8 6加以溫度控制之複數馬達,在出口側設置溫度 感應器(入口側溫度感應器係對各控制系統均以在代表的 馬達設置一個),以使此出口側溫度控制於一定值之方式 (第二控制系統6 2係使設在光栅機台2之各馬達所循環之 冷媒的出口側溫度為一定值,第三控制系統8 6係使設在 晶圓機台5之各馬達所循環之冷媒的出口側溫度為一定 值),用各閥加以調整在各馬達所流動之冷媒流量。10917pif.ptd Page 33 200305925 V. Description of the invention (28) The circulation system C 5 of 2 uses the grating machine 2 as the temperature control object, and it is set independently from the first and second control systems 6 1 and 6 2 The circulation system C 6 of the third control system 8 6 uses the wafer machine 5 as a temperature control object. Furthermore, in Fig. 8, those having the same functions as the evaporator 65 and the heater 71 shown in Fig. 4 are simplified by a temperature regulator 87. Similarly, those having the same functions as the heat exchanger 70, the heaters 7, 5 and 7 8 shown in Fig. 4 are schematically illustrated by the temperature regulators 8 8 and 8 9. In addition, in Fig. 4, the machines 2 and 5 are respectively provided with two temperature sensors 76a, 76b, and 79a, 79b. In Fig. 8, the temperature sensors 76, 79 are represented as a representative. Regarding the temperature sensors 7 6 and 7 9, as in the first embodiment described above, the control system can also select the maximum heating value of each control system among the plurality of motors controlled by the second control system 6 2 and the third control system 86. For each of the selected motors, a temperature sensor is provided for each of the selected motors (two locations on the inlet side and the outlet side of each motor), and the same refrigerant temperature control as described in the first embodiment is performed based on these temperature sensors. . In addition, as described in the modification of the first embodiment, a plurality of motors whose temperature is controlled in the second control system 62 and a plurality of motors whose temperature is controlled in the third control system 86 may be respectively provided at the outlet. A temperature sensor is installed on the side (one for each control system is set on the representative motor) so that the temperature on the outlet side is controlled to a certain value (the second control system 6 2 is set on the grating The temperature at the outlet side of the refrigerant circulated by the motors of the machine 2 is a fixed value, and the third control system 86 is to set the temperature at the outlet side of the refrigerant circulated by the motors provided in the wafer table 5 to a fixed value). Each valve adjusts the flow of refrigerant flowing through each motor.

10917pif ptd 第34頁 200305925 五、發明說明(29) 對於本實施例,在第一控制系統6 1係由第三檢測手段 之溫度感應器6 9加以檢測在投影光學系統P L循環的冷媒 溫度,控制器6 7係依據此項檢出結果加以設定冷媒之循 環條件(第三循環條件),藉由控制溫度調節器8 7之驅 動,使投影光學系統P L之溫度加以管理在± 0 . 0 1 °C之範 圍。又,在第二控制系統6 2係由溫度感應器7 6加以檢測 在光柵機台2循環之冷媒溫度,藉由控制器7 7依據此項檢 出結果加以控制溫度調節器8 8之驅動,使光柵機台2之溫 度加以管理在± 0 . 1 °C。同樣,在第三控制系統8 6,係由 溫度感應器7 9加以檢測在晶圓機台5循環之冷媒溫度,控 制器9 0係依據此項檢出結果,藉由加以控制溫度調節器 8 9之驅動,使晶圓機台5之溫度加以管理在± 0 . 1 °C之範 圍。 如此,在本實施例,可獲得與上述第一實施例同樣之 作用效果外再加上,控制系統6 1、6 2、8 6係以各獨立使 投影光學系統PL、光栅機台2、晶圓機台5加以溫度控制 之關係,可實施按照各控制對象之發熱量的高精度溫度 管理。 第9圖係表示關於本發明之曝光裝置的第三實施例。 在本實施例,第一控制系統6 1係以投影光學系統PL與 晶圓機台5為溫度控制對象,第二控制系統6 2係以光栅機 台2為溫度控制對象。第一控制系統6 1係使在投影光學系 統PL及定為系統AL循環之循環系統C1與在晶圓機台5循環 之循環系統C 6由一組之溫度調節器8 7加以溫度控制。此10917pif ptd Page 34 200305925 V. Description of the invention (29) For this embodiment, the first control system 61 is detected by the temperature sensor 69 of the third detection means, and the temperature of the refrigerant in the projection optical system PL cycle is detected and controlled. The device 6 7 sets the cycle condition of the refrigerant (the third cycle condition) based on the detection result. By controlling the drive of the temperature regulator 8 7, the temperature of the projection optical system PL is managed at ± 0. 0 1 ° The range of C. In the second control system 62, the temperature of the refrigerant circulating in the grating machine 2 is detected by the temperature sensor 76, and the controller 7 7 controls the drive of the temperature regulator 88 according to the detection result. The temperature of the grating machine 2 was controlled at ± 0.1 ° C. Similarly, in the third control system 86, the temperature of the refrigerant circulating in the wafer machine 5 is detected by the temperature sensor 79, and the controller 90 controls the temperature regulator 8 based on the detection result. The drive of 9 enables the temperature of the wafer machine 5 to be controlled within the range of ± 0.1 ° C. In this way, in this embodiment, the same functions and effects as those in the first embodiment can be obtained. In addition, the control systems 6 1, 6, 2, and 8 6 independently make the projection optical system PL, the grating table 2, and the crystal The circular machine table 5 is temperature-controlled, and can implement high-precision temperature management according to the amount of heat generated by each control target. Fig. 9 shows a third embodiment of the exposure apparatus according to the present invention. In this embodiment, the first control system 61 uses the projection optical system PL and the wafer machine 5 as temperature control objects, and the second control system 62 uses the grating machine 2 as temperature control objects. The first control system 61 is configured to control the temperature of the circulation system C1 in the projection optical system PL and the system AL cycle and the circulation system C6 in the wafer machine 5 by a set of temperature regulators 87. this

10917pif ptd 第35頁 200305925 五、發明說明(30) 種溫度控制係以溫度感應器6 9檢測在投影光學系統PL循 環之冷媒溫度,藉由控制器6 7依據檢出結果控制溫度調 節器8 7之驅動加以實施。此種場合,晶圓機台5係與投影 光學系統P L同樣,以± 0 · 0 1 °C之範圍加以溫度控制。尚 且,在第二控制系統6 2,光栅機台2係以單體與第一控制 系統獨立加以溫度控制在± 0 . 1 °C之範圍。 在本實施例,也可使發熱量最大之光柵機台2與發熱 量較小之投影光學系統PL、晶圓機台5以獨立個別加以溫 度控制,可設定按照各機器之發熱量的最適合之冷卻條 件。並且,與第二實施例比較時,以第一控制系統6 1可 加以控制兩個循環系統C 1、C 6之冷媒溫度的關係,能使 裝置結構加以簡單化。 第1 0圖係表示本發明之曝光裝置的第四實施例。尚 且,在此圖係僅圖示關於光柵機台2之溫度控制系統。 如第1 0圖所示,第二控制系統6 2係對第8圖、第9圖所 示之包含溫度感應器7 6、控制器7 7、溫度調節器8 8的實 施例,再附設溫度感應器9 1 、9 2與第二調節器之珀耳帖 元件(P e 1 t i e r e 1 e m e n t) 9 3。珀耳帖元件9 3係比溫度調節 器8 8較配置於光柵機台2之近傍,由控制器7 7加以控制其 驅動。溫度感應器9 1係在珀耳帖元件9 3之上游側,溫度 感應器9 2係在珀耳帖元件9 3之下游側,各加以配置,各 溫度感應器9 1、9 2所檢出之冷媒溫度係輸出於控制器 7 7。控制器7 7係依據溫度感應器7 6之溫度檢出結果加以 控制溫度調節器8 8之驅動的同時,依據溫度感應器9 1 、10917pif ptd Page 35 200305925 V. Description of the invention (30) The temperature control system uses a temperature sensor 6 9 to detect the temperature of the refrigerant in the PL cycle of the projection optical system, and the controller 6 7 controls the temperature regulator 8 7 according to the detection result. To drive implementation. In this case, similar to the projection optical system P L, the wafer machine 5 is temperature-controlled in the range of ± 0 · 0 1 ° C. Furthermore, in the second control system 62, the grating machine 2 is independently controlled from the first control system with a temperature of ± 0.1 ° C. In this embodiment, it is also possible to independently control the temperature of the grating machine 2 with the largest heat generation, the projection optical system PL and the wafer machine 5 with a small heat generation, and set the most suitable according to the heat generation of each machine. Cooling conditions. Moreover, when compared with the second embodiment, the relationship between the refrigerant temperatures of the two circulation systems C1 and C6 can be controlled by the first control system 61, and the device structure can be simplified. FIG. 10 shows a fourth embodiment of the exposure apparatus of the present invention. Moreover, only the temperature control system of the grating machine 2 is illustrated here. As shown in FIG. 10, the second control system 62 is an embodiment including the temperature sensor 7 6, the controller 7 7, and the temperature regulator 8 8 shown in FIG. 8 and FIG. The sensors 9 1, 9 2 and the Peltier element 9 3 of the second regulator. The Peltier element 9 3 is located closer to the grating table 2 than the temperature regulator 8 8 and is driven by a controller 7 7. The temperature sensors 91 are on the upstream side of the Peltier element 93, and the temperature sensors 9 2 are on the downstream side of the Peltier element 93, each of which is arranged, and the temperature sensors 9 1 and 9 2 detect The refrigerant temperature is output to the controller 7 7. The controller 7 7 is based on the temperature detection result of the temperature sensor 76, and controls the driving of the temperature regulator 8 8 at the same time as the temperature sensor 9 1,

10917pif.ptd 第36頁 200305925 五、發明說明(31) 9 2之溫度檢出結果加以控制抬耳帖元 之構成係與上述第二、第三實施例同 由上述之構成,控制器7 7係藉由4 使循環系統C 5之冷媒溫度以過冷卻於 溫度。然而,控制器7 7係依據溫度感 之冷媒溫度,藉由使珀耳帖元件9 3加 昇於所定溫度。 在本實施例,在驅動光柵機台2時 上幵’藉由使過冷卻之冷媒加以循環 定溫度對機器之急劇溫度變化也可容 不限於使冷媒以溫度調節器8 8加以過 件93加熱之構成結構,也可使以溫度 熱’以拍耳帖元件9 3加以冷卻之構成 卻之冷媒加熱之場合,也可使用加熱 件9 3 〇 接下來’說明本發明之曝光裝置έ 例如在第9圖所示之第三實施例係 統6 1由控制器6 7依據溫度感應器6 9之 溫度調節器8 7之驅動,在第二控制系 據溫度感應器76之檢出結果加以控制 動的結構,在本實施例,不設此等溫 依據關於曝光處理之資料(曝光處理〕 計算隨晶圓機台5之驅動所產生之熱^ 之熱I設定冷媒溫度加以控制溫度調 件9 3之驅動。其他 樣。 S制溫度調節器8 8 , 比所定溫度較低之 應器9 1 、9 2所檢出 以通電,使冷媒上 雖產生激劇的溫度 可使溫度控制於所 易對應。尚且,並 冷卻,以珀耳帖元 調節器8 8加以過加 結構。又,使過冷 器以替代珀耳帖元 3第五實施例。 構成在第一控制系 檢出結果加以控制 統62由控制器77依 溫度調節器8 8之驅 度感應器6 9、7 6, Γ法),由控制器6 7 ^,藉由依據所算出 節器8 7之驅動。同10917pif.ptd Page 36 200305925 V. Description of the invention (31) 9 The temperature detection result to control the structure of the ear element is the same as the second and third embodiments described above, and the controller 7 7 series The refrigerant temperature of the circulation system C 5 is supercooled to the temperature by 4. However, the controller 7 7 raises the Peltier element 93 to a predetermined temperature based on the temperature-sensing refrigerant temperature. In this embodiment, when the grating machine 2 is driven, the rapid temperature change of the machine by circulating the supercooled refrigerant at a constant temperature can also be tolerated. The refrigerant is heated by the temperature regulator 88 and the heating member 93. The structure can also be used in the case of heating the refrigerant with the temperature of the 'Peltier element 9 3', but the heating element 9 3 can also be used. Next, the exposure device of the present invention will be described. The third embodiment of the system 6 shown in FIG. 9 is driven by the controller 6 7 according to the temperature sensor 68 of the temperature sensor 6 9 and controlled in the second control system based on the detection result of the temperature sensor 76. Structure, in this embodiment, this isotherm is not set. According to the data on exposure processing (exposure processing), the heat generated by the driving of the wafer machine 5 is calculated. Drive. Others. S-type temperature regulator 8 8, the lower than the predetermined temperature of the reactors 9 1, 9 2 are detected to energize, even if the refrigerant produces an extreme temperature, the temperature can be controlled easily. Still, and cool down, The Peltier element regulator 88 has an over-added structure. In addition, a subcooler is used instead of the Peltier element 5 in a fifth embodiment. The control result 62 is constituted by the controller 77 depending on the temperature. The drive sensor 6 9, 7 6, Γ method of the regulator 8 8) is driven by the controller 6 7 ^ according to the calculated node 8 7. with

200305925 五、發明說明(32) 樣,在第二控制系統6 2,依據曝光資料,由控制器7 7計 算隨光柵機台2之驅動所產生之熱量,藉由依據所算出之 熱量設定冷媒溫度加以控制溫度調節器8 8之驅動。 具體的控制方法係例如由操作員(使用者)在〇 A面板上 選擇工作程序(process program),從選擇之程序資訊與 登記於曝光資料之資訊,在計算電路上計算需要之電能 及發熱量,加以控制溫度調節器8 7、8 8之驅動。 在本實施例,不需要設溫度感應器等之溫度檢測手段 之關係,有助於裝置之小型化及低價格化。尚且,也可 對各馬達個別求給予馬達之驅動電壓與發熱量(溫度變化 量)之比,而加以進行按照與驅動電壓之比的流量調節。 尚且,在上述之各實施例,雖係構成為藉由調整冷媒 流量加以進行控制對象之溫度控制的結構,並非限定於 此,只要包含冷媒之溫度、流速、流量之中至少一個即 可。又,在上述之實施例,雖係構成為使一部份共用溫 度調節器或冷媒驅動用之泵的結構,也可採用各控制對 象(循環系統)個別分離,由全部循環系統加以共用等, 種種之構成結構。例如設冷卻器與加熱器之雙方的場 合,也可使共用加熱器,各控制對象各別設冷卻器。此 種場合,最後的溫度調節係由冷卻器加以進行。 又,在上述之各實施例,雖係構成為使在機台2、5循 環前之冷媒溫度與循環後之冷媒溫度以單純平均的結 構,也可使用加權平均。加權平均之方法係可採用以下 方式。200305925 V. Description of the invention (32) Similarly, in the second control system 62, the controller 7 7 calculates the heat generated by the driving of the grating machine 2 based on the exposure data, and sets the refrigerant temperature based on the calculated heat. The drive of the temperature regulator 88 is controlled. The specific control method is, for example, an operator (user) selects a process program on the OA panel, and calculates the required power and heat generation on the calculation circuit from the selected program information and the information registered in the exposure data. , To control the drive of the temperature regulator 8 7, 8 8. In this embodiment, there is no need to provide a temperature detecting means such as a temperature sensor, which contributes to the miniaturization and cost reduction of the device. In addition, the ratio of the driving voltage to the motor and the amount of heat generation (temperature change) to each motor can be individually calculated, and the flow rate can be adjusted according to the ratio of the driving voltage. In addition, in each of the above-mentioned embodiments, the structure for controlling the temperature of the control object by adjusting the refrigerant flow rate is not limited to this, as long as it includes at least one of the temperature, flow rate, and flow rate of the refrigerant. Also, in the above-mentioned embodiment, although a part of the structure is configured to share a temperature regulator or a refrigerant-driven pump, each control object (circulation system) may be individually separated and shared by all the circulation systems. Various constituent structures. For example, if both the cooler and the heater are provided, the heater may be shared, and each control target may be provided with a cooler. In this case, the final temperature adjustment is performed by a cooler. In each of the above-mentioned embodiments, a structure in which the refrigerant temperature before the cycle of the machines 2 and 5 and the refrigerant temperature after the cycle are simply averaged may be used, but a weighted average may be used. The method of weighted averaging is as follows.

10917pif.ptd 第38頁 200305925 五、發明說明(33) (1 ) 從馬達等之熱源至入口側溫度感應器之設置位置 之距離與從熱源至出口側溫度感應器之設置位置之距離 為相異之場合,以距離愈近之溫度感應器,其檢出結果 之加權愈大等,按照距離進行加權。 (2 ) 構成馬達等之熱源入口近傍之材料與出口近傍之 材料為相異之場合,由導熱率等,按照材料之材質加權 (吸熱比率愈大(導熱率大)之材料加權愈大)。 (3)在入口近傍或出口近傍有其他熱源存在之場合, 按照其他熱源之有無或發熱量進行加權。例如,在流路 有其他熱源存在之場合,使近於其他熱源之溫度感應器 輸出的加權變大。又,在流路外有其他熱源存在之場 合,其他熱源之發熱會經介空氣傳達於溫度感應器之關 係,使近於其他熱源之溫度感應器輸出的加權變大。 (4 )在基線計測時,使入口側溫度感應器之檢出溫 度、出口側溫度感應器之檢出溫度、冷媒之控制溫度(以 單純平均所計算之控制溫度)與所計測之基線量(或基線 量之變動量)以組加以記憶,此項記憶動作在每次基線計 測時加以重複。然後,依據累積之複數資料組,加以推 算在入口側溫度與出口側溫度之任何一方,以何種程度 之加權可使基線變動變小。然而,依據所推算之加權進 行加權平均。 又,在上述之實施例,雖係構成使用同一種類之冷媒 (H F E )的結構,也可按照各循環系統所要求之溫度控制精 度或設置環境,在各循環系統使用相異冷媒。10917pif.ptd Page 38 200305925 V. Description of the invention (33) (1) The distance from the heat source such as the motor to the installation position of the temperature sensor on the inlet side is different from the distance from the heat source to the installation position of the temperature sensor on the outlet side In this case, the closer the temperature sensor is, the greater the weight of the detection result is, etc., and the weight is based on the distance. (2) Where the materials near the heat source inlet of the motor and the materials near the exit are different, the material is weighted by the thermal conductivity, etc. (the greater the heat absorption ratio (the larger the thermal conductivity), the larger the material weight). (3) Where other heat sources exist near the entrance or near the exit, weighting shall be based on the presence or heat generation of other heat sources. For example, when there are other heat sources in the flow path, the weight of the temperature sensor output closer to the other heat sources becomes larger. Also, where there are other heat sources outside the flow path, the heat of other heat sources will be transmitted to the relationship of the temperature sensor through the air, making the weight of the temperature sensor output closer to other heat sources larger. (4) During baseline measurement, the detection temperature of the inlet-side temperature sensor, the detection temperature of the outlet-side temperature sensor, the control temperature of the refrigerant (the control temperature calculated by a simple average), and the measured baseline amount ( Or the amount of change in the baseline amount) is memorized in groups. This memory action is repeated every time the baseline is measured. Then, based on the accumulated plural data sets, the degree of weighting at either the inlet-side temperature or the outlet-side temperature is estimated to reduce the baseline variation. However, a weighted average is performed based on the extrapolated weights. In the above-mentioned embodiment, although the structure using the same type of refrigerant (H F E) is used, different refrigerants can be used in each circulation system according to the temperature control accuracy or installation environment required by each circulation system.

10917pif ptd 第39頁 200305925 五、發明說明(34) 尚且,在上述之實施例,雖係構成對一個溫度控制對 象(馬達等)以一方向循環之冷媒加以溫度控制的結構, 本發明並不限於此,也可構成使用循環於複數方向之冷 媒加以溫調的結構。 例如,在第1 1 A圖所示,對控制對象2 1 (在此之一例係 使用Y線性馬達1 5之活動元件2 1加以說明),以兩個循環 方向相異之循環系統C 7 a、C 7 b加以配管,在各循環系統 C 7 a、C 7 b係從互逆方向使冷媒加以循環(在兩個循環系統 間,使冷媒之入口側與出口側成為相逆)。以如此加以構 成時,可消除因僅設一個循環系統之場合而在控制對象 2 1有產生(在一個循環系統之入口側與出口側之間所產 生)之虞的溫度坡度,可進行更高精度,並且正確之溫 調。 又,在第1 1 B圖或第1 1 C圖所示,使溫調部(流路、配 管)加以細分化,藉由使控制對象加以溫調時,也可使成 為在控制對象上無溫度坡度之狀態。在第1 1 B圖,如圖所 示對控制對象2 1配設三個相異之循環系統(流路、配 管)C 7 c、C 7 d、C 7 e,在各循環系統使冷媒循環於圖中之 箭頭方向。又,在第1 1 C圖,如圖所示,對控制對象2 1係 配設四個相異之循環系統(流路、配管)C 7 f、C 7 g、C 7 h、 C 7 i ,在各循環系統使冷媒循環於圖中之箭頭方向。如此 構成進行細分化之溫調結構時,也可消除控制對象上之 溫度坡度。 尚且,如第11B圖之循環系統C7c與C7e,或第11C圖之10917pif ptd Page 39 200305925 V. Description of the Invention (34) In the above-mentioned embodiment, although the structure is configured to control the temperature of a refrigerant that is circulated in one direction by a temperature control object (motor, etc.), the invention is not limited In this case, a structure in which temperature is adjusted by using a refrigerant circulating in a plurality of directions may be adopted. For example, as shown in FIG. 1A, the control object 2 1 (in this example, a moving element 2 1 using a Y linear motor 15 is described), a circulation system C 7 a with two different circulation directions And C 7 b are piping, and the circulation systems C 7 a and C 7 b circulate the refrigerant from the reciprocal direction (between the two circulation systems, the inlet side and the outlet side of the refrigerant are reversed). When configured in this way, the temperature gradient that may occur in the control target 21 (which occurs between the inlet side and the outlet side of a circulation system) in the case where only one circulation system is provided can be eliminated, and the temperature gradient can be made higher. Accuracy and correct temperature adjustment. In addition, as shown in FIG. 1B or FIG. 1C, the temperature adjustment unit (flow path, piping) is subdivided, and the temperature can be controlled by the control object, so that the control object can be made inactive. State of temperature gradient. In Figure 1 1B, as shown in the figure, three different circulation systems (flow channels, piping) C 7 c, C 7 d, and C 7 e are arranged for the control object 2 1 to circulate the refrigerant in each circulation system. The direction of the arrow in the figure. In Fig. 1 1C, as shown in the figure, four different circulation systems (flow paths, piping) C 7 f, C 7 g, C 7 h, and C 7 i are provided for the control object 2 1 system. In each circulation system, the refrigerant is circulated in the direction of the arrow in the figure. When the temperature adjustment structure is subdivided in this way, the temperature gradient on the control object can also be eliminated. Moreover, the circulatory systems C7c and C7e shown in Fig. 11B, or Fig. 11C

10917pif.ptd 第40頁 200305925 五、發明說明(35) 循環系統C7f與C7h,或C7g與C7i ,在對象配置之循環系 統,從消除溫度坡度之觀點,係使冷媒之循環方向如圖 所示以相逆方向為宜。 尚且,在此第1 1 A〜1 1 C圖之例,係構成在各循環系統 C 7 a〜C 7 I之入口側與出口側設置溫度感應器7 6 a、7 6 b的結 構,也可僅對一個循環系統設置溫度感應器,或也可僅 在各循環系統之出口側設置溫度感應器。此等溫度感應 器之使用方法係與上述之各實施例同樣。 在此第1 1 A〜1 1 C圖所示之構成係在控制對象較大(較 長)之場合或控制對象之發熱量(驅動量)較大之場合,特 別有效。此種控制對象,其一例可舉,光栅粗動機台1 6 之Y線性馬達1 5 (驅動於掃描方向之馬達)的活動元件2 1 或’在Y方向長延伸之定字20,或者晶圓機台之線性馬達 33的活動元件36或定子37專。又’在第iiA〜iic圖所干之 構成係對要求無溫度坡度狀態處之控制對象特另彳#力文^。 此種控制對象’其一例可舉配置於晶圓或光柵之附^的 驅動源(例如音圈馬達8 1〜8 3或,光栅微動拖 達1 7Y等)。第1 1 A〜1 1C圖之構成的適用處並、口 音圈馬 所記述之處,只要在希望無溫度坡度狀況 疋、在此 nmc圖所示之構成即可。 兄之處’採用第 尚且 對本實施例之基板,不僅為半道_ 導體晶圓W,也可適用液晶顯示元件用之址以 1卞用^千 〜坡螭基板或、、舊 膜磁頭用之陶瓷晶圓,或者在曝光裝置所# ^ 得 (mask)或光栅(reticle)之底片(合成石苽 央、矽晶圓)等。10917pif.ptd Page 40 200305925 V. Description of the invention (35) Circulation systems C7f and C7h, or C7g and C7i, in the circulation system of the object configuration, from the perspective of eliminating the temperature gradient, the direction of the refrigerant circulation is shown in the figure. The opposite direction is appropriate. In addition, the examples in Figs. 1 A to 1 1 C are structures in which temperature sensors 7 6 a and 7 6 b are provided on the inlet and outlet sides of each of the circulation systems C 7 a to C 7 I. The temperature sensor may be provided for only one circulation system, or the temperature sensor may be provided only at the outlet side of each circulation system. These temperature sensors are used in the same manner as the above embodiments. The configurations shown in Figures 1 1 A to 1 1 C are particularly effective when the control target is large (longer) or when the control target's heat generation (driving amount) is large. An example of such a control object is a movable element 2 1 of a Y linear motor 15 (a motor driven in a scanning direction) of a grating rough stage 16 or a fixed character 20 extending in the Y direction, or a wafer The moving element 36 or the stator 37 of the linear motor 33 of the machine is specialized. In addition, the components in the diagrams iiA to iic are specially designed for the control target in the state where no temperature gradient is required. # 力 文 ^. An example of such a control object is a driving source (for example, a voice coil motor 8 1 to 8 3 or a grating micro-motion drag 17 7) arranged on a wafer or a grating. Applicable parts of the structures in Figures 1 A to 1C and the accent coils are described as long as the structure shown in the nmc chart is desired if no temperature gradient is desired. Brother's use of the substrate of this embodiment is not only a semi-conductor _ conductor wafer W, but also can be used for the address of the liquid crystal display element 1 ~ ^ thousand ~ Po 螭 substrate, or the old film magnetic head Ceramic wafers, or negatives (synthetic stone cores, silicon wafers), etc., obtained in a mask or reticle in an exposure device.

200305925 五、發明說明(36) 對曝光裝置1係使光栅R與晶圓W以同步移動而將光柵R 之圖案加以掃描曝光之步進掃描方式之掃描型曝光裝置 (scanning · stepper ;USP5,473,410)以外,也可適用於 使光柵R與晶圓W以靜止狀態將光柵R之圖案加以曝光,使 晶圓W順次步進移動的步進重複方式之投影曝光裝置 (stepper) 〇 曝光裝置1之種類係不限於使半導體元件圖案曝光於 晶圓W之半導體元件製造用之曝光裝置,也可廣加適用於 液晶顯示元件製造用之曝光裝置或,製造薄膜磁頭、攝 像器件(CCD)或者光柵等之曝光裝置等。 又,對曝光用照明光之光源,係不僅使用從超高壓水 銀燈所產生之輝線g線(4 3 6 n m )、h線(4 0 4、7 n m )、i線 ( 3 6 5 nm)、krF準分子雷射( 2 4 8mm)、ArF準分子雷射 (193nm)、F2雷射(157nm),也可使用X線或電子線等之帶 電粒子線。例如,使用電子線之場合的電子銃係可使用 熱電子放射型之六侧化鑭(lantan hexaboride,LaB6)、 鈕(t a n t a 1 u m,T a )。更且,使用電子線之場合係可使用 光栅R之構成,也可不使用光栅R使圖案直接形成於晶圓 上之構成。又,也可使用YANG雷射或半導體雷射等之高 頻。 投影光學系統PL之倍率係不僅為縮小系等倍率及擴大 系之任何均可。又,投影光學系統使用準分子雷射等之 遠紫外線之場合玻璃材料係使用能使遠紫外線透過之石 英或螢石等,使用F 2雷射或X線之場合光學系統係為反射200305925 V. Description of the invention (36) The exposure device 1 is a scanning type exposure device (scanning · stepper; USP 5,473,410) of a step-and-scan method in which the grating R and the wafer W are moved in synchronization to scan and expose the pattern of the grating R. In addition, it can also be applied to a projection exposure device (stepper) in a step-and-repeat mode in which the grating R and the wafer W are exposed at a static state, and the wafer W is moved step by step. The type is not limited to an exposure device for manufacturing a semiconductor element that exposes a semiconductor element pattern to a wafer W. It can also be widely applied to an exposure device for manufacturing a liquid crystal display element or to manufacture a thin-film magnetic head, an imaging device (CCD), or a grating. Exposure equipment, etc. In addition, for the light source of exposure illumination light, not only the g-line (4 3 6 nm), h-line (4 0, 4 7 nm), i-line (3 6 5 nm), krF excimer laser (248mm), ArF excimer laser (193nm), F2 laser (157nm), X-rays or electron beams can also be used. For example, in the case of using an electron beam, a lanthanum hexaboride (LaB6) and a button (t a n t a 1 m, T a) of thermionic emission type can be used. In addition, when an electronic wire is used, a configuration using a grating R may be used, or a configuration in which a pattern is directly formed on a wafer without using the grating R may be used. Also, high frequencies such as YANG lasers and semiconductor lasers can be used. The magnification of the projection optical system PL is not limited to a magnification such as a reduction system and an expansion system. When the projection optical system uses far-ultraviolet light such as excimer laser, the glass material is made of quartz or fluorite, which allows far-ultraviolet light to pass through. When the F 2 laser or X-ray is used, the optical system is reflective.

10917pif.ptd 第42頁 200305925 五、發明說明(37) 折射系統或折射系統(光柵R也使用反射塑又使用電子 線之場合光學系統係使用由電子透鏡及偏向器所構成之 電子光學系統即可。尚且,電子線通過之光路不需待言 係成真空。又,也可不用投影光學系統,適用使光柵R與 晶圓W加以密接將光栅R之圖案曝光之接近(proximity)曝 光裝置。 在晶圓機台5或光栅機台2使用線性馬達(參照 US5, 623, 853或US5, 528, 118)之場合,係可使用氣浮上型 及磁浮上型之任何者。其中氣浮上型係使用空氣軸承, 磁浮上型係使用洛倫兹力(l〇rentz force)或電抗 (yeactance)力。又,各機台2、5係可為沿導向器移動之 形式’也可為不設導向器之無導向器形式。 各機台2、5之驅動機構,係可使用將磁鐵部 磁鐵)與電樞部件對向由電磁力驅動各機台25之 磁鐵部件與電極部件之他方传担 如以上之移動面側(基底(b a s e ) )。 ’、、〇又 在本申請案所專述利’上申,案實施例之曝光裝置1係使包含 以可保持所— 明乾圍所舉之各構成元件的子李 以組立精度、電精度、光學精度4;加 種光學系統進行,此等各種精度,在組立前後,對 …成機械精度之ϊΐ精;=系系统 成電精 ΐ € ί i,磁鐵部件係以二維配置磁鐵,電枢係以_咕、 機:2種,.磁鐵部件與電拖部件之 於機台2、10917pif.ptd Page 42 200305925 V. Description of the invention (37) Refraction system or refractive system (where the grating R also uses reflective plastic and electronic wires) The optical system can be an electronic optical system composed of an electronic lens and a deflector. Moreover, the optical path through which the electronic wire passes does not need to be a vacuum. Furthermore, a projection optical system can also be used, and a proximity exposure device for exposing the pattern of the grating R to the wafer R by closely contacting the grating R can be used. Where a linear motor (see US5, 623, 853 or US5, 528, 118) is used for the wafer table 5 or the grating table 2, any of the air-floating type and the magnetic-floating type can be used. Among them, the air-floating type is used Air bearing, magnetic levitation type uses Lorentz force or yeactance force. Moreover, each machine 2 and 5 series can be moved along the guide, or it can be provided without guide. There is no guide type. The driving mechanism of each machine 2 and 5 can use the magnet part magnet) and the armature part. The other parts of the magnet part and electrode part that drive each machine 25 by electromagnetic force are as above. Move Face side (base (b a s e)). ',, 0, and in the application specifically described in this application', the exposure device 1 of the embodiment of the case is made up of assembly components, components, components, etc. which can be maintained by Mingqianwei with assembly accuracy, electrical accuracy, Optical accuracy 4; Adding an optical system, these various accuracy, before and after assembly, become the precision of mechanical accuracy; = system into electric precision € ί, the magnet components are arranged in two dimensions magnets, armature With _gu, machine: 2 types, magnet parts and electric drag parts on machine 2,

10917pif.ptd 第43頁 200305925 五、發明說明(38) 度之調整。從各種子系統組立曝光裝置之製程係包含各 子系統互相之,機械接連、電路之配線接連,氣壓管路 之配管接連等。在從此各種子系統組立曝光裝置之製程 前,係且有各子系統個個的組立製程。各種子系統之曝 光裝置的組立製程完成後,進行綜合調整,以確保曝光 裝置全體之各種精度。尚且,曝光裝置之製造係以在管 理溫度及清潔度等之清潔室進行為宜。 雖然本發明已以一較佳實施例揭露如上,然其並非用 以限定本發明,任何熟習此技藝者,在不脫離本發明之 精神和範圍内,當可作些許之更動與潤飾,因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。10917pif.ptd Page 43 200305925 V. Explanation of the invention (38) Degree adjustment. The process of assembling exposure devices from various subsystems includes the interconnection of each subsystem, mechanical connection, wiring connection of circuits, piping connection of pneumatic lines, and so on. Before the process of assembling an exposure device from various subsystems, there are individual assembling processes for each subsystem. After the assembly process of the exposure devices of various subsystems is completed, comprehensive adjustments are performed to ensure the accuracy of the entire exposure device. In addition, it is preferable to manufacture the exposure device in a clean room that manages temperature and cleanliness. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.

10917pif.ptd 第44頁 200305925 圖式簡單說明 圖式之簡單說明 第1圖係本發明的曝光裝置之概略結構圖。 第2圖係構成本發明的曝光裝置之光柵機台的外觀斜 視圖。 第3圖係構成本發明的曝光裝置之晶圓機台的外觀斜 視圖。 第4圖係表示第一實施例的關於曝光裝置全體之溫度 控制系統圖。 第5圖係表示關於光栅機台之溫度控制系統圖。 第6圖係表示關於晶圓機台之溫度控制系統圖。 第7圖表示半導體元件的製造程序之一例的流程圖。 第8圖係表示第二實施例的關於曝光裝置全體之溫度 控制系統的簡略圖。 第9圖係表示第三實施例的關於曝光裝置全體之溫度 控制系統的簡略圖。 第1 0圖係表示第四實施例的關於光柵機台之溫度控制 系統的簡略圖。 第1 1 A〜1 1 C圖係表示本發明的變形例圖。 圖式之標示說明: C 7〜C 1 0 循環系統 R 光栅(光罩) W 晶圓(基板) PL 投影光學系統 1 曝光裝置10917pif.ptd Page 44 200305925 Brief description of the drawings Brief description of the drawings Fig. 1 is a schematic structural diagram of an exposure apparatus of the present invention. Fig. 2 is a perspective view showing the appearance of a grating table constituting the exposure apparatus of the present invention. Fig. 3 is an external perspective view of a wafer machine constituting the exposure apparatus of the present invention. Fig. 4 is a diagram showing a temperature control system for the entire exposure apparatus according to the first embodiment. Fig. 5 is a diagram showing the temperature control system of the grating machine. FIG. 6 is a diagram showing a temperature control system for a wafer machine. FIG. 7 is a flowchart showing an example of a manufacturing process of a semiconductor element. Fig. 8 is a schematic diagram showing a temperature control system for the entire exposure apparatus according to the second embodiment. Fig. 9 is a schematic diagram showing a temperature control system for the entire exposure apparatus according to the third embodiment. Fig. 10 is a schematic diagram showing a temperature control system of a grating machine according to the fourth embodiment. Figures 1 1 A to 1 C are diagrams showing modifications of the present invention. Description of the drawing labels: C 7 ~ C 1 0 Circulation system R Grating (photomask) W Wafer (substrate) PL Projection optical system 1 Exposure device

10917pif.ptd 第45頁 200305925 圖式簡單說明 2 光柵機台(光罩機台) 5 晶圓機台(基板機台) 1 5 Y線性馬達(驅動源) 1 7 X X音圈馬達(驅動源) 1 7 Y Y音圈馬達(驅動源) 3 3 線性馬達(驅動源) 3 5 X線性馬達(驅動源) 6 1 第一控制系統 6 2 第二控制系統 6 9 溫度感應器(第三檢測手段) 7 2 修整馬達(驅動源) 76a 溫度感應器(第二檢測手段、第一溫度檢測手 段、第一感應器) 76b 溫度感應器(第二檢測手段、第二溫度檢測手 段、第二感應器) 77 控制器(第一溫度管理部、第二溫度管理部) 7 9 a、7 9 b 溫度感應器(第一檢測手段) 80 閥(調節手段) 86 第三控制系統 88 溫度調節器(第一調節器) 93 珀耳帖元件(Peltier element)10917pif.ptd Page 45 200305925 Brief description of drawings 2 Grating machine (mask machine) 5 Wafer machine (substrate machine) 1 5 Y linear motor (drive source) 1 7 XX voice coil motor (drive source) 1 7 YY voice coil motor (driving source) 3 3 linear motor (driving source) 3 5 X linear motor (driving source) 6 1 first control system 6 2 second control system 6 9 temperature sensor (third detection means) 7 2 Trimming motor (drive source) 76a Temperature sensor (second detection means, first temperature detection means, first sensor) 76b Temperature sensor (second detection means, second temperature detection means, second sensor) 77 controller (first temperature management unit, second temperature management unit) 7 9 a, 7 9 b temperature sensor (first detection means) 80 valve (adjustment means) 86 third control system 88 temperature regulator (first Regulator) 93 Peltier element

10917pif.ptd 第46頁10917pif.ptd Page 46

Claims (1)

200305925 六、申請專利範圍 1. 一種曝光裝置,係使保持在一光柵基台上之一光 柵的一圖案像以經介一投影光學系統投影於保持在一基 板機台上之一基板的曝光裝置,其特徵在於,包括: 一第一控制系統,係設定一第一液體的一溫度之同 時,將設定該溫度之該第一液體對該投影光學系統與該 基板機台之至少一方的物體加以循環,以控制該物體之 一溫度;以及 一第二控制系統,係與該第一控制系統獨立以設定一 第二液體的一溫度,將設定該溫度之該第二液體對該光 柵機台加以循環,以控制該光柵機台之一溫度;其中 對設定該液體之該溫度時之一溫度範圍大小之點,該 第一、該第二控制系統係具有互異之一設定能力。 2 ·如申請專利範圍第1項所述之曝光裝置,該物體係 該基板機台,其特徵在於; 該第一控制系統係計算隨該基板機台之驅動所產生的 一熱量之同時,依據所算出之該熱量,加以設定該第一 液體的該溫度;以及 該第二控制系統係計算隨該光栅機台之驅動所產生的 一熱量之同時,依據所算出之該熱量,加以設定該第二 液體的該溫度。 3 .如申請專利範圍第1項或第2項所述之曝光裝置,其 特徵在於包括: 一第一檢測手段,係各檢側在該物體循環前之該第一 液體的該溫度與在該物體循環後之該第一液體的該溫200305925 VI. Application Patent Scope 1. An exposure device is an exposure device that projects a pattern image of a grating held on a grating abutment onto a substrate held on a substrate machine via a projection optical system. It is characterized in that it includes: a first control system that sets a temperature of a first liquid and simultaneously sets the first liquid that sets the temperature to an object on at least one of the projection optical system and the substrate machine Cycle to control a temperature of the object; and a second control system that is independent of the first control system to set a temperature of a second liquid, the second liquid that sets the temperature is applied to the grating machine Cycle to control a temperature of the grating machine; wherein the first and the second control systems have mutually different setting capabilities for a temperature range of the temperature at which the liquid is set. 2 · The exposure device as described in item 1 of the scope of the patent application, the substrate system of the object system, characterized in that: the first control system calculates a quantity of heat generated by the driving of the substrate machine, and The calculated heat amount is used to set the temperature of the first liquid; and the second control system calculates a heat amount generated by the driving of the grating machine, and sets the first heat amount based on the calculated heat amount. This temperature of two liquids. 3. The exposure device according to item 1 or item 2 of the patent application scope, comprising: a first detection means, wherein the temperature of the first liquid on each inspection side before the object circulates and the temperature of the first liquid The temperature of the first liquid after the object circulates 10917pi f.ptd 第47頁 200305925 六、申請專利範圍 度;以及 一第二檢測手段,係各檢側在該光柵機台循環前之該 第二液體的該溫度與在該光柵機台循環後的該溫度;其 中 該第一控制系統係依據該第一檢測手段之一檢出結果 設定該第一液體的該溫度; 該第二控制系統係依據該第二檢測手段之一檢出結果 設定該弟二液體的該溫度。 4 ·如申請專利範圍第1項或第2項所述之曝光裝置,該 光柵機台係具有複數驅動源,其特徵在於: 該第二控制系統係依據該光柵機台上之該些複數驅動 源中,關於在發熱量最大之一所定驅動源的一發熱量資 訊,加以設定該第二液體的該溫度。 5 .如申請專利範圍第4項所述之曝光裝置,其特徵在 於,該第二控制系統包括: 複數分歧流路,係使設定該溫度之該第二液體,對各 該些複數驅動源加以循環;以及 複數調節手段,係設置於該些複數分歧流路上之該第 二液體供給各該些複數驅動源前的位置之同時,加以調 節供給各該些驅動源之該第二液體的一流量。 6 .如申請專利範圍第5項·之曝光裝置,其特徵在於; 該第二控制系統係再在具有算出該些複數驅動源間的 一發熱量比之一計算手段;以及 該些複數調節手段係按照算出之該發熱量比各調節對10917pi f.ptd page 47 200305925 VI. Patent application scope; and a second detection means, the temperature of the second liquid on each inspection side before the grating machine is circulated and the temperature of the second liquid after the grating machine is circulated The temperature; wherein the first control system sets the temperature of the first liquid according to a detection result of one of the first detection means; the second control system sets the brother according to a detection result of one of the second detection means This temperature of two liquids. 4 · The exposure device described in item 1 or 2 of the scope of patent application, the grating machine has a plurality of driving sources, characterized in that: the second control system is based on the plurality of driving on the grating machine In the source, the temperature of the second liquid is set with respect to the calorific information of a predetermined driving source at one of the largest calorific values. 5. The exposure apparatus according to item 4 of the scope of patent application, wherein the second control system includes: a plurality of branched flow paths for setting the second liquid at the temperature to each of the plurality of driving sources. Circulation; and plural adjusting means, which adjust the flow rate of the second liquid supplied to each of the driving sources while the second liquid provided on the plural branched flow paths is supplied to each of the plural driving sources. . 6. The exposure device according to item 5 of the scope of patent application, characterized in that: the second control system is further provided with a calculation means for calculating a calorific value ratio between the plurality of driving sources; and the plurality of adjustment means It is adjusted according to the calculated calorific value ratio. 10917pif.ptd 第48頁 200305925 六、申請專利範圍 各該些複數驅動源加以循環之該第二液體的該流量。 7 .如申請專利範圍第4項所述之曝光裝置,其特徵在 於,包括: 一第一溫度檢測手段,係設置於該所定驅動源之近 傍,檢測對該所定驅動源加以循環前之該第二液體的該 溫度;以及 一第二溫度檢測手段,係設置於該所定驅動源之近 傍,檢測在該所定驅動源循環後之該第二液體的該溫 度;其中 該第二控制系統係依據該第一及該第二檢測手段之一 檢出結果’加以設定該苐二液體的該溫度。 8 .如申請專利範圍第1項或第2項所述之曝光裝置,該 第一控制系統係至少以該投影光學系統為控制對象,其 特徵在於,更再包括: 一第三控制系統,係與該第一、該第二控制系統以獨 立設定一第三液體的一溫度,使設定該溫度之該第三液 體對該基板機台加以循環,以控制該基板機台的一溫 度。 9 .如申請專利範圍第1項或第2項所述之曝光裝置,其 特徵在於,該第一控制系統係以該投影光學系統與該基 板機台之兩方為控制對象。 1 0 . —種曝光裝置,係使保持在一光柵基台上之一光 柵的一圖案像以經介一投影光學系統投影於保持在一基 板基台上之一基板的曝光裝置,其特徵在於,包括:10917pif.ptd Page 48 200305925 6. Scope of patent application The flow rate of the second liquid that each of the plural driving sources circulates. 7. The exposure device according to item 4 of the scope of patent application, characterized in that it comprises: a first temperature detecting means, which is arranged near the predetermined driving source, and detects the first driving source before the predetermined driving source is cycled. The temperature of the two liquids; and a second temperature detecting means arranged near the predetermined driving source to detect the temperature of the second liquid after the predetermined driving source circulates; wherein the second control system is based on the The detection result of one of the first and the second detection means is used to set the temperature of the second liquid. 8. The exposure device according to item 1 or item 2 of the scope of patent application, the first control system uses at least the projection optical system as a control object, and further includes: a third control system, With the first and the second control systems, a temperature of a third liquid is set independently, and the third liquid set at the temperature is circulated to the substrate machine to control a temperature of the substrate machine. 9. The exposure device according to item 1 or item 2 of the scope of patent application, wherein the first control system takes two of the projection optical system and the substrate machine as control objects. 1 0. An exposure device is an exposure device that projects a pattern image of a grating held on a grating base to a substrate held on a substrate via a projection optical system, characterized in that ,include: l〇917pif.ptd 第49頁 200305925 六、申請專利範圍 一第一控制系統,係對該投影光學系統與該基板基台 中之至少一方的一物體設定使一第一液體加以循環時的 一第一循環條件之同時,在該第一循環條件之下將該第 一液體加以循環,以控制該物體的一溫度; 一第二控制系統,係與該第一循環條件以獨立設定對 該光柵機台使一第二液體加以循環時的一第二循環條件 之同時,在該第二循環條件下將該第二液體加以循環, 以控制該光柵機台的一溫度; 一第一檢測手段,係各檢測在該物體循環前之該第一 液體的一溫度與,在該物體循環後之該第一液體的一溫 度;以及 一第二檢測手段,係各檢測在該光栅機台循環前之該 第二液體的一溫度與,在該光柵機台循環後之該第二液 體的一溫度;其中 該第一控制系統,係依據該第一檢測手段之一檢出結 果加以設定該第一循環條件; 該第二控制系統,係依據該第二檢測手段之一檢出結 果加以設定該第二循環條件。 1 1 .如申請專利範圍第1 0項所述之曝光裝置其特徵在 於: 該第一循環條件係使該第一液體在該物體循環前所設 定之該第一液體的一溫度、一流速、一流量之中至少包 含一個;以及 該第二循環條件係使該第二液體在該光栅機台循環前l〇917pif.ptd Page 49 200305925 6. The scope of patent application-a first control system is a first when setting an object of at least one of the projection optical system and the substrate base to circulate a first liquid At the same time as the circulation conditions, the first liquid is circulated under the first circulation conditions to control a temperature of the object; a second control system is set independently of the first circulation conditions to the grating machine When a second liquid is circulated under a second circulation condition, the second liquid is circulated under the second circulation condition to control a temperature of the grating machine; a first detection means is each Detecting a temperature of the first liquid before the object circulates and a temperature of the first liquid after the object circulates; and a second detection means each detecting the first liquid before the grating machine circulates. A temperature of the two liquids and a temperature of the second liquid after the grating machine circulates; wherein the first control system is based on a detection result of one of the first detection means. The first cycle condition is set. The second control system sets the second cycle condition according to a detection result of one of the second detection means. 1 1. The exposure device according to item 10 of the scope of patent application, characterized in that: the first circulation condition is a temperature, a flow rate, a temperature of the first liquid that is set before the object is circulated, A flow rate includes at least one; and the second circulation condition is such that the second liquid is circulated before the grating machine is circulated. 10917pif.ptd 第50頁 200305925 六、申請專利範圍 所設定之該第二液體的一溫度、一速度、一流量之中至 少包含一個。 1 2 .如申請專利範圍第1 0項或第1 1項所述之曝光裝 置,該光柵機台係具有複數驅動源,其特徵在於,該第 二檢測手段包含: 一第一感應器,係設置在該光柵機台上之該些複數驅 動源之中發熱量最大的一所定驅動源之近傍,檢測對該 所定驅動源加以循環前之該第二液體的該溫度;以及 一第二感應器,係設置在該所定驅動源之近傍,檢測 對該所定驅動源加以循環後之該第二液體的該溫度。 1 3 .如申請專利範圍第1 2項所述之曝光裝置,其特徵 在於,該第二控制系統包括: 複數分歧流路,係使設定該溫度之該第二液體對各該 些複數驅動源加以循環;以及 複數調節手段,係設置於該些複數分歧流路上之該第 二液體供給各該些複數驅動源前的位置之同時,加以調 節供給各該些驅動源之該第二液體的一流量。 1 4.如申請專利範圍第1 3項所述之曝光裝置,其特徵 在於: 該第二控制系統係更再具有算出該些複數驅動源間的 一發熱量比之一計算手段;以及 該些複數調節手段係按照算出之該發熱量比各調節對 各該些複數驅動源加以循環之該第二液體的該流量。 1 5 .如申請專利範圍第1 0項或第1 1項所述之曝光裝10917pif.ptd Page 50 200305925 6. Scope of patent application The temperature, speed, and flow rate of the second liquid shall be at least one. 1 2. According to the exposure device described in item 10 or item 11 of the patent application scope, the grating machine has a plurality of driving sources, wherein the second detection means includes: a first sensor, a Among the plurality of plural driving sources provided on the grating machine, the vicinity of a predetermined driving source having the greatest heat generation, and detecting the temperature of the second liquid before the predetermined driving source is circulated; and a second sensor Is located near the predetermined driving source, and detects the temperature of the second liquid after circulating the predetermined driving source. 1 3. The exposure device according to item 12 of the scope of patent application, wherein the second control system includes: a plurality of branched flow paths, the second liquid for setting the temperature to each of the plurality of driving sources Circulate; and a plurality of adjusting means for adjusting a position of the second liquid supplied to each of the plurality of driving sources while the second liquid provided on the plurality of branching flow paths is supplied to each of the plurality of driving sources. flow. 14. The exposure device according to item 13 of the scope of patent application, wherein: the second control system further has a calculation means for calculating a calorific value ratio between the plurality of driving sources; and The plural adjusting means is the flow rate of the second liquid which is circulated to each of the plural driving sources according to the calculated calorific value ratio. 15. The exposure device as described in item 10 or item 11 of the scope of patent application 10917pif ptd 第51頁 200305925 六、申請專利範圍 置,該第一控制系統係至少以該基板機台為控制對象, 其特徵在於,更再包括: 一第三控制系統,係與該第一及該第二控制系統以獨 立設定對該投影光學系統使一第三液體加以循環時的一 第三循環條件之同時,在該第三循環條件之下將該第三 液體加以循環,以控制該投影光學系統的一溫度;以及 一第三檢測手段,係檢測在該投影光學系統循環前之 該第三液體的一溫度;其中 該第三控制系統,係依據該第三檢測手段之一檢出結 果,加以設定該第三循環條件。 1 6 . —種曝光裝置,係使保持在一光柵基台上之一光 柵的一圖案像以經介一投影光學系統投影於保持在一基 板機台上之一基板的曝光裝置,該光柵機台及該基板機 台係各具有複數驅動源,其特徵在於,包括: 一第一控制系統,係在該些複數驅動源及該投影光學 系統之中,使一發熱量或一溫度變化量在一第一所定量 以内者為一第一控制對象加以溫度控制;以及 一第二控制系統,係在該些複數驅動源及該投影光學 系統之中,使該發熱量或該溫度變化量比該第一所定量 較大者為一第二控制對象與該第一控制系統以獨立加以 溫度控制。 1 7.如申請專利範圍第1 6項所述之曝光裝置,其特徵 在於: 該第一控制系統,係設定使一第一液體對該第一控制10917pif ptd Page 51 200305925 6. The scope of the patent application, the first control system is at least the substrate machine as a control object, characterized in that it further includes: a third control system, related to the first and the The second control system independently sets a third circulation condition when the projection optical system circulates a third liquid, and the third liquid is circulated under the third circulation condition to control the projection optics. A temperature of the system; and a third detection means for detecting a temperature of the third liquid before the projection optical system circulates; wherein the third control system is based on a detection result of one of the third detection means, This third cycle condition is set. 16. An exposure device is an exposure device that projects a pattern image of a grating held on a grating base to a substrate held on a substrate machine via a projection optical system. The grating machine Each of the stage and the substrate machine has a plurality of driving sources, which is characterized in that it includes: a first control system connected between the plurality of driving sources and the projection optical system, so that a heating value or a temperature change amount is between A first quantity or less is used as a first control object for temperature control; and a second control system is included in the plurality of driving sources and the projection optical system, so that the amount of heat generation or the temperature change is larger than The larger of the first quantity is a second control object and the first control system for independent temperature control. 1 7. The exposure device according to item 16 of the scope of patent application, characterized in that: the first control system is set to make a first liquid control the first control 10917pif.ptd 第52頁 200305925 六、申請專利範圍 對象加以循環時的一第一循環條件之同時,在該第一循 環條件下將該第一液體加以循環,以控制該第一控制對 象的一溫度;以及 該第二控制系統,係設定使一第二液體對該第二控制 對象加以循環時的一第二循環條件之同時,在該第二循 環條件之下將該第二液體加以循環,以控制該第二控制 對象的一溫度。 1 8 .如申請專利範圍第1 7項所述之曝光裝置,其特徵 在於: 該第一循環條件,係使該第一液體在該物體循環前所 設定之該第一液體的一溫度、一速度、一流量之中至少 包含一個;以及 該第二循環條件,係使該第二液體在該光栅機台循環 前所設定之該第二液體的一溫度、一速度、一流量之中 至少包含一個。 1 9 .如申請專利範圍第1 7項或第1 8項所述之曝光裝 置,其特徵在於,更再包括: 一第一檢測手段,係設置在該第一控制對象所含之複 數控制對象中,該發熱量或該溫度變化量最大之一控制 對象的近傍,加以測定該第一液體的一溫度;以及 一第二檢測手段,係設置在該第二控制對象所含之複 數控制對象中,該發熱量或該溫度變化量最大之一控制 對象的近傍,加以測定該第二液體的一溫度;其中 該第一、該第二控制系統,係各依據由該第一、該第10917pif.ptd Page 52 200305925 VI. At the same time as a first circulation condition when the subject of patent application is circulated, the first liquid is circulated under the first circulation condition to control a temperature of the first control object ; And the second control system, while setting a second circulation condition when a second liquid circulates the second control object, the second liquid is circulated under the second circulation condition to Control a temperature of the second control object. 18. The exposure device according to item 17 of the scope of patent application, wherein: the first circulation condition is a temperature, a temperature of the first liquid set by the first liquid before the object is circulated, a At least one of speed and a flow rate; and the second circulation condition includes at least one of a temperature, a speed, and a flow rate of the second liquid set before the second liquid is circulated by the grating machine. One. 19. The exposure device according to item 17 or item 18 in the scope of patent application, further comprising: a first detection means, which is provided on a plurality of control objects included in the first control object In the vicinity of one of the control objects with the greatest amount of heat or temperature change, a temperature of the first liquid is measured; and a second detection means is provided in the plurality of control objects included in the second control object. The temperature of the second liquid is measured near or near the control object that has the greatest amount of heat or temperature change; wherein the first and second control systems are based on the first and the first 10917pif.ptd 第53頁 200305925 六、申請專利範圍 二檢測手段之一檢出結果’加以設定該第一、該第二循 環條件。 2 0 .如申請專利範圍從第1 6項至第1 8項中之任何一項 所述之曝光裝置,其特徵在於: 該第一控制對象,係包含該投影光學系統與,設在該 基板機台之一部分驅動源;以及 該第二控制對象,係包含設在該光柵機台之複數驅動 源。 2 1 ·如申請專利範圍從第1 6項至第1 8項中任何一項所 述之曝光裝置,該第二控制對象,係包含設在該光柵機 台之複數驅動源與,設在該基板機台之複數驅動源,其 特徵在於,該第二控制系統包括: 一第一溫度管理部,係加以管理設在該光柵機台之該 些複數驅動源的一溫度;以及 一第二溫度管理部,係與該第一溫度管理部以獨立加 以管理設在該基板機台之該些複數驅動源的一溫度。 2 2 .如申請專利範圍第4項所述之曝光裝置,其特徵在 於; 該第一控制系統,係依據在該控制對象加以循環前之 該第一液體的該溫度與,在該控制對象加以循環後之該 第一液體的該溫度之平均溫度進行該設定;以及 該第二控制系統,係依據在該光柵機台加以循環前之 該第二液體的該溫度與,在光柵機台循環後之該第二液 體的該溫度之平均溫度進行該設定。10917pif.ptd Page 53 200305925 VI. Scope of patent application 6. The detection result of one of the two detection means is used to set the first and second cycle conditions. 20. The exposure device according to any one of the claims 16 to 18, wherein the first control object includes the projection optical system and is disposed on the substrate. A part of the drive source of the machine; and the second control object includes a plurality of drive sources provided on the grating machine. 2 1 · The exposure device as described in any one of claims 16 to 18, the second control object includes a plurality of driving sources provided on the grating machine and The plurality of driving sources of the substrate machine are characterized in that the second control system includes: a first temperature management unit for managing a temperature of the plurality of driving sources provided on the grating machine; and a second temperature The management unit is independent of the first temperature management unit to manage a temperature of the plurality of driving sources provided on the substrate machine. 2 2. The exposure device according to item 4 of the scope of patent application, wherein the first control system is based on the temperature of the first liquid before the control object is circulated, and is applied to the control object. The average temperature of the temperature of the first liquid after circulation is set; and the second control system is based on the temperature of the second liquid before the grating machine is circulated and after the grating machine is circulated The setting is performed by an average temperature of the temperature of the second liquid. 10917pif.ptd 第54頁 200305925 六、申請專利範圍 2 3. 如申請專利範圍第1 0項所述之曝光裝置,其特徵 在於; 該第一控制系統,係依據在該控制對象加以循環前之 該第一液體的該溫度與,在該控制對象加以循環後之該 第一液體的該溫度之平均溫度進行該設定;以及 該第二控制系統,係依據在該光柵機台加以循環前之 該第二液體的該溫度與,在光柵機台循環後之該第二液 體的該溫度之平均溫度進行該設定。 24. 如申請專利範圍第1 9項所述之曝光裝置,其特徵 在於; 該第一控制系統,係依據在該控制對象加以循環前之 該第一液體的該溫度與,在該控制對象加以循環後之該 第一液體的該溫度之平均溫度進行該設定;以及 該第二控制系統,係依據在該光栅機台加以循環前之 該第二液體的該溫度與,在光栅機台循環後之該第二液 體的該溫度之平均溫度進行該設定。 2 5 ·如申請專利範圍第1項、第2項、第1 0項、第1 1 項、第1 6至第1 8項中之任何一項所述之曝光裝置,其特 徵在於,該第二控制系統包括: 一第一調節器,係使該第二液體的該溫度比一所定溫 度較加以過冷卻或過加熱;以及 一第二調節器,係比該第一調節器較設置於該光柵機 台之近傍,使由該第一調節器加以溫度設定之該第二液 體的該溫度加以調節於該所定溫度。10917pif.ptd Page 54 200305925 6. Application for Patent Scope 2 3. The exposure device described in item 10 of the patent application scope is characterized by: The first control system is based on the before the control object is cycled. The setting of the temperature of the first liquid and an average temperature of the temperature of the first liquid after the control object is circulated; and the second control system is based on the first temperature before the grating machine is circulated. The setting is performed by the average temperature of the two liquids and the average temperature of the second liquid after the grating machine circulates. 24. The exposure device according to item 19 of the scope of patent application, wherein the first control system is based on the temperature of the first liquid before the control object is circulated, and is applied to the control object. The average temperature of the temperature of the first liquid after circulation is set; and the second control system is based on the temperature of the second liquid before the grating machine is circulated and after the grating machine is circulated The setting is performed by an average temperature of the temperature of the second liquid. 2 5 · The exposure device according to any one of claims 1, 2, 10, 11 and 16 to 18, characterized in that the Two control systems include: a first regulator that supercools or overheats the temperature of the second liquid than a predetermined temperature; and a second regulator that is disposed more than the first regulator Near the grating machine, the temperature of the second liquid whose temperature is set by the first regulator is adjusted to the predetermined temperature. l〇917pif ptd 第55頁 200305925 六、申請專利範圍 2 6 .如申請專利範圍第1項第2項、第1 0項、第1 1項、 第1 6項至第1 8項中任何一項所述之曝光裝置,其特徵在 於,使用於該溫度控制之各異體係同一種類的液體。 2 7 ·如申請專利範圍第1項第2項、第1 0項、第1 1項、 第1 6項至第1 8項中之任何一項所述之曝光裝置,其特徵 在於,該第一控制系統與該第二控制系統之至少一方, 使該液體對一個控制對象加以循環時之循環經路係具有 複數。 2 8如申請專利範圍第2 7項所述之曝光裝置,其特徵在 於,各循環於該些複數經路之一冷媒的對該控制對象之 方向,各該循環經路係互為相異。 2 9 . —種元件製造方法,其特徵在於,該元件製造方 法包含使用申請專利範圍從第1項至第2 8項中之任何一項 所述之曝光裝置,將形成於該光柵上之一圖案轉移於該 基板上的製程。〇917pif ptd Page 55 200305925 VI. Scope of patent application 26. If the scope of patent application is 1 of item 2, item 10, item 11, item 16 to item 18 The exposure apparatus described above is characterized in that it uses liquids of the same kind in different systems for temperature control. 2 7 · The exposure device according to any one of items 1, 2, 10, 11 and 16 to 18 in the scope of patent application, characterized in that the At least one of a control system and the second control system has a plurality of circulation paths when the liquid circulates a control object. 28. The exposure device according to item 27 in the scope of the patent application, characterized in that the directions of the refrigerant to each of the plurality of paths in the direction of the control object are different from each other. 2 9. A device manufacturing method, characterized in that the device manufacturing method includes the use of an exposure device described in any one of the patent applications ranging from item 1 to item 28, which will be formed on one of the gratings The process of pattern transfer on the substrate. 10917pif.ptd 第56頁10917pif.ptd Page 56
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