JP2006066687A - Method of regulating temperature, stage device, exposure device and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of regulating a temperature which can regulate the temperature of a table for placing a photosensitive substrate uniformly and to provide a stage device, an exposure device and a method of manufacturing the device. <P>SOLUTION: The stage device includes a movable first table 43, and a second table 42 movably supported while it is separated from the first table 43 while a substrate W is being held. The stage device 40 includes a radiating unit 80 installed at least in the part of the surface 43a opposed to the second table 42 in the first table 43 and radiating thermal energy to the second table 42. The stage device regulates the second table 42 to a predetermined temperature by using the thermal energy radiated from the radiating unit 80. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for adjusting the temperature of a member on which a substrate is mounted, a stage apparatus capable of adjusting the temperature of a table on which the substrate is mounted, an exposure apparatus, and a device manufacturing method.

In lithography processes for manufacturing semiconductor elements, etc., step-and-repeat reduction projection exposure apparatuses (so-called steppers) and step-and-scan scanning projection exposure apparatuses (so-called scanning steppers) Projection exposure apparatuses are the mainstream.
In such an exposure apparatus, as the capacity of a semiconductor memory increases and the speed and integration of a CPU processor increase, there is an increasing demand for finer patterns formed on a photosensitive substrate, and high exposure accuracy is required. Has been.
For this reason, there has been proposed a technique for suppressing exposure failure by blocking the table holding the photosensitive substrate from a predetermined heat source to suppress thermal deformation of the table.
JP 2001-244196 A JP-A-8-293449

However, with the above-described technique, the table is merely cut off from a predetermined heat source, and it has been difficult to completely eliminate the temperature unevenness (temperature gradient) generated in the table. That is, the table has uneven temperature due to the influence of other heat sources such as air conditioning. Due to this temperature unevenness, the table is locally thermally deformed, and the positional relationship between the interferometer reflecting mirror arranged at the end of the table and the held photosensitive substrate is slightly shifted, and the wafer position by the interferometer is shifted. An error will be given to measurement. As a result, there is a problem that exposure accuracy deteriorates.
In addition, a temperature control device or the like can be provided on the table, but the weight of the table increases, which adversely affects the positioning performance of the table. In addition, when flowing a temperature-controlled fluid, vibration is generated due to the flow of the liquid, which adversely affects exposure.

  The present invention has been made in view of the above-described circumstances, and proposes a temperature adjustment method, a stage apparatus, an exposure apparatus, and a device manufacturing method capable of uniformly adjusting the temperature of a table on which a photosensitive substrate is placed. The purpose is to do.

In the temperature control method, the stage apparatus, the exposure apparatus, and the device manufacturing method according to the present invention, the following means are employed in order to solve the above problems.
1st invention is the temperature control method which makes the 2nd member (42) supported so that a movement away from the 1st member (43) is predetermined temperature, Comprising: From the 1st member to the 2nd member The second member is adjusted to a predetermined temperature by radiating thermal energy to the second member.
According to the present invention, the second member can be indirectly heated or cooled to be adjusted to a predetermined temperature. Further, since it is not necessary to provide a temperature control device on the second member, the weight of the second member can be reduced.

Further, heat energy is radiated from the radiation portion (80) provided on at least a part of the surface (43a) of the first member (43) facing the second member (42) to the second member (42). In what is to be done, thermal energy is radiated from the opposing surface of the first member close to the second member, so that the radiated thermal energy can be used for temperature adjustment of the second member without waste.
Moreover, in what adjusts a thermal energy based on the temperature of a 2nd member (42), a 2nd member can be temperature-adjusted appropriately and it can prevent that temperature irregularity generate | occur | produces in a 2nd member. it can.

The second invention includes a movable first table (43) and a second table (42) supported so as to be movable while being separated from the first table while holding the substrate (W). A stage device (40), comprising a radiating portion (80) installed on at least a part of a surface (43a) of the first table facing the second table and radiating heat energy to the second table. The second table is adjusted to a predetermined temperature using thermal energy radiated from the radiating portion.
According to this invention, by projecting heat energy from the first table toward the second table, the second table can be indirectly heated or cooled to be adjusted to a predetermined temperature. And since it becomes unnecessary to provide a temperature control apparatus in a 2nd table, the weight reduction of a 2nd table can be achieved.

Further, in the case where the radiating portion (80) includes the flow path (85) through which the fluid (L) having thermal energy passes, the liquid radiated from the radiating section is caused to flow through the flow path through the fluid adjusted to a predetermined temperature. Can be radiated toward the second table.
The fluid (L) further includes an actuator (330) disposed between the second table (43) and the first table (42) to move the second table relative to the first table. However, in the case of being used also for temperature control of the actuator, the heat generation of the actuator is suppressed by the fluid, so that the influence of the heat generation of the actuator on the second table is cut off, and the second table is heated to a more uniform temperature. Can be adjusted.
In addition, when the radiating section (80) includes a thermoelectric element, it is possible to further improve the controllability of the temperature adjustment of the second table.
Further, the apparatus further includes a temperature sensor (86) for detecting the temperature of the second table (42) and a control device (50) for controlling the release of thermal energy based on the detection result of the temperature sensor. It becomes possible to control the temperature of the table accurately and uniformly.
Further, in the case where the radiating portion (80) is fixed to the first table (43) via the heat insulating member (87), the thermal energy radiated from the radiating portion heats or cools the first table. This can be prevented. Moreover, it becomes possible to radiate the thermal energy radiated from the radiating portion toward the second table without waste.

3rd invention has the mask stage (20) holding a mask (R), and the substrate stage (40) holding a board | substrate (W), and exposes the pattern (PA) formed in the mask to a board | substrate In the exposure apparatus (EX) to be used, the stage apparatus of the second invention is used for at least one of the mask stage and the substrate stage.
According to the present invention, since the temperature of the table on the mask stage or the substrate stage is kept uniform and constant, the position of the mask or wafer placed on the table can be accurately measured. This makes it possible to expose a fine pattern on the wafer.

According to a fourth aspect of the present invention, in the device manufacturing method including the lithography step, the exposure apparatus (EX) of the third aspect is used in the lithography step.
According to the present invention, a high-performance device can be efficiently manufactured.

According to the present invention, the following effects can be obtained.
Since the second member and the second table are heated or cooled by receiving heat energy, it is not necessary to provide a temperature control device, and the weight of the second member and the second table can be reduced. And the 2nd member and the 2nd table can be adjusted to predetermined temperature without temperature irregularity.
Therefore, in such a stage apparatus, appropriate positioning control is possible, and the wafer and mask can be positioned with high accuracy. Thereby, the line width formed on the substrate can be made uniform, and the occurrence of line width defects can be reduced. In particular, when a fine pattern is formed, it is effective and the yield can be improved. Since a device having a fine pattern can be efficiently manufactured, it is possible to increase the capacity of the semiconductor memory and increase the speed and integration of the CPU processor.

Hereinafter, embodiments of a temperature control method, a stage apparatus, an exposure apparatus, and a device manufacturing method according to the present invention will be described with reference to the drawings.
FIG. 1 is a schematic block diagram showing an embodiment of the exposure apparatus EX of the present invention.
The exposure apparatus EX moves a reticle (mask) R and a wafer (substrate) W synchronously in a one-dimensional direction, and applies a pattern PA formed on the reticle R to each shot area on the wafer W via the projection optical system 30. This is a step-and-scan type scanning exposure apparatus, that is, a so-called scanning stepper.
The exposure apparatus EX includes an illumination optical system 10 that illuminates the reticle R with the exposure light EL, a reticle stage 20 that holds the reticle R, and a projection optical system 30 that projects the exposure light EL emitted from the reticle R onto the wafer W. , A wafer stage 40 for holding the wafer W, a control device 50 for comprehensively controlling the exposure apparatus EX, and the like.
Each of these devices is supported on the main body frame 100 or the base frame 200 via the vibration isolation units 60, 70 and the like.
In the following description, the direction that coincides with the optical axis AX of the projection optical system 30 is the Z-axis direction, and the synchronous movement direction (scanning direction) between the reticle R and the wafer W in the plane perpendicular to the Z-axis direction is the Y-axis. The direction perpendicular to the direction, the Z-axis direction, and the Y-axis direction (non-scanning direction) is taken as the X-axis direction. Further, the directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

The illumination optical system 10 illuminates the reticle R supported by the reticle stage 20 with the exposure light EL, and the exposure light source and the optical integrator and the optical integrator for uniformizing the illuminance of the light beam emitted from the exposure light source. A condenser lens for condensing the exposure light EL from the light source, a relay lens system, a variable field stop for setting the illumination area on the reticle R by the exposure light EL in a slit shape, etc. (not shown).
The exposure light EL emitted from the illumination optical system 10 includes ultraviolet emission lines (g-line, h-line, i-line), KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength) emitted from a mercury lamp. 193 nm), F2 laser light (wavelength 157 nm), or other ultraviolet light.
The laser beam emitted from the light source 5 is incident on the illumination optical system 10, and the cross-sectional shape of the laser beam is shaped into a slit shape or a rectangular shape (polygon), and the illumination light (exposure) has a substantially uniform illuminance distribution. Light) EL is irradiated onto the reticle R.
The illumination optical system 10 is supported by an illumination system support member 12 fixed to the upper surface of the second support plate 120 that constitutes the main body frame 100.

The reticle stage (mask stage) 20 supports the reticle R and performs two-dimensional movement in the plane perpendicular to the optical axis AX of the projection optical system 30, that is, the XY plane, and minute rotation in the θZ direction. A reticle fine movement stage that holds the reticle R, a reticle coarse movement stage that moves together with the reticle fine movement stage with a predetermined stroke in the Y-axis direction, which is the scanning direction, and a linear motor that moves these (not shown). Prepare. The reticle fine movement stage is formed with a rectangular opening, and the reticle is held by vacuum suction or the like by a reticle suction mechanism provided around the opening.
A movable mirror 21 is provided on the reticle stage 20. A laser interferometer 22 is provided at a position facing the moving mirror 21. Then, the position and rotation angle of the reticle R on the reticle stage 20 in the two-dimensional direction are measured in real time by the laser interferometer 22, and the measurement result is output to the control device 50. Then, the control device 50 drives a linear motor or the like based on the measurement result of the laser interferometer 22, thereby positioning the reticle R supported by the reticle stage 20.
The reticle stage 20 is levitated and supported on the upper surface of the second support plate 120 constituting the main body frame 100 via a non-contact bearing (not shown) (for example, a hydrostatic bearing).

The projection optical system 30 is a system in which a plurality of projection lens systems such as a lens and a reflecting mirror made of fluoride crystals such as fluorine-doped quartz, fluorite, and lithium fluoride are sealed with a projection system housing (lens barrel 31). It is provided directly below the reticle stage 20. The projection lens system reduces the exposure light EL emitted through the reticle R by a predetermined projection magnification β (β is, for example, ¼), and converts the pattern image of the reticle R into a specific area (shot) on the wafer W. (Image). Each element of the projection lens system of the projection optical system 30 is supported by the projection system housing via a holding member (not shown), and each holding member is, for example, in an annular shape so as to hold the peripheral edge of each element. Is formed.
In addition, since vacuum ultraviolet rays such as an F ₂ laser are used as the exposure light EL, fluorite (CaF ₂ crystal), quartz glass doped with fluorine, hydrogen, or the like as an optical glass material (optical element) with good transmittance, And magnesium fluoride (MgF ₂ ) and the like are used. In this case, in the projection optical system PL, it is difficult to obtain a desired imaging characteristic (chromatic aberration characteristic, etc.) by using only a refractive optical member. Therefore, the catadioptric system in which the refractive optical member and the reflecting mirror are combined. May be adopted.
A flange 33 is provided on the outer wall of the lens barrel 31, and is inserted into a cylindrical sensor support frame 35 having a flange. Further, the lens barrel 31 and the sensor support frame 35 are inserted and supported in a hole 113 provided in the first support plate 110 constituting the main body frame 100. The first support board 110 is supported substantially horizontally on the base frame 200 via the vibration isolation unit 60.
The sensor support base is a member that supports sensors such as an autofocus sensor. Further, a kinematic mount (not shown) is provided between the first support board 110 and the sensor support frame 35, and the tilt angle of the projection optical system 30 can be adjusted.

A wafer stage (substrate stage, stage device) 40 performs two-dimensional movement in the XY plane and minute rotation in the θZ direction while supporting the wafer W. The wafer stage 41 holds the wafer W, and the wafer W In order to perform leveling and focusing, the wafer holder 41 can be slightly moved in three degrees of freedom in the Z-axis direction, θX direction, and θY direction, and the Z table 42 and the Z table 42 are continuously moved in the Y-axis direction and in the X-axis direction. An XY table 43 that moves stepwise, a wafer surface plate 44 that supports the XY table 43 so as to be movable in the XY plane, a drive unit (not shown), such as a linear motor that translates the Z table 42 and the XY table 43 together. Etc.
A movable mirror 47 is provided on the Z table (second member, second table) 42, and a laser interferometer 48 is provided at a position facing the movable mirror 47. The two-dimensional position and rotation angle of the wafer W on the wafer stage 40 are measured in real time by the laser interferometer 48, and the measurement result is output to the control device 50. Then, the controller 50 positions the wafer W supported on the wafer stage 40 by driving a linear motor or the like based on the measurement result of the laser interferometer 48.
A plurality of air bearings (air pads) 45 which are non-contact bearings are fixed to the bottom surface of the XY table (first member, first table) 43, and the XY table 43 is mounted on the wafer surface plate 44 by these air pads 45. For example, it is supported by levitation through a clearance of about several microns.
Further, the wafer surface plate 44 is supported substantially horizontally on the support plate 210 of the basic frame 200 via the vibration isolation unit 70.

The control device 50 controls the exposure apparatus EX in an integrated manner, and includes a calculation unit that performs various calculations and controls, a storage unit that records various types of information, an input / output unit, and the like.
Then, for example, an exposure operation for controlling the positions of the reticle R and the wafer W based on the detection results of the laser interferometers 22 and 48 and transferring an image of the pattern PA formed on the reticle R to a shot area on the wafer W. Repeat.

The main body frame 100 includes a first support plate 110 that supports the projection optical system 30, a second support plate 120 that supports the reticle stage 20 disposed above the projection optical system 30, the first support plate 110, and the first support plate 110. 2 It is comprised from several support | pillar 130 standingly arranged between the support boards 120. FIG. As described above, the first support plate 110 is formed with the hole 113 formed to be slightly larger than the outer diameter of the cylindrical projection optical system 30. In addition, the 1st support board 110 or the 2nd support board 120, and the some support | pillar 130 are good also as a structure connected with a fastening means etc., and good also as a structure which formed these integrally.
As described above, the main body frame 100 is supported on the base frame 200 via the vibration isolation unit 60.

The base frame 200 has a support plate 210 that supports the wafer stage 40 via the vibration isolation unit 70 on its upper surface, and a plurality of frames that stand on the support plate 210 and support the main body frame 100 via the vibration isolation unit 60. It is comprised from the support | pillar 220. FIG. The support board 210 and the support column 220 may be structured to be coupled by fastening means or the like, or may be a structure formed integrally.
And the foundation frame 200 is installed substantially horizontally via the foot | leg part 215 on floor surfaces F, such as a clean room.

FIG. 2 is an enlarged view of the wafer stage 40, and FIG. 3 is a plan view of the radiation unit 80.
As described above, the wafer stage 40 includes the Z table 42 having the wafer holder 41 disposed on the upper surface and the XY table 43 that moves integrally with the Z table 42 in the XY direction. Three support devices 300 are arranged between the Z table 42 and the XY table 43, and thereby the Z table 42 is supported on the XY table 43 at three points.

The support device 300 includes a self-weight support unit 310 and a drive unit 330 that are formed of an elastic member or the like. The Z table 42 is supported by its own weight support part 310 while compensating its own weight, and the Z table 42 is minutely driven by the drive part 330 in the three degrees of freedom in the Z axis direction, θX direction, and θY direction. Thereby, leveling and focusing of the wafer W sucked and held by the wafer holder 41 on the Z table 42 is performed. As described above, since the weight of the Z table 42 is canceled by the self-weight support part 310, it is not necessary for the driving part 330 to support the weight of the Z table 42, and the energy consumption can be greatly reduced.
As the configuration of the self-weight support portion 310, for example, a configuration that compensates the self-weight of the Z table 42 by combining a spring member, a repulsive force, and a suction force of a magnet, or a compressed gas (air) in an air spring is used. Thus, a configuration that compensates for its own weight can be used.
The drive unit (actuator) 330 includes a coil 331 disposed at the upper end of the self-weight support unit 310 and an annular permanent magnet 332 disposed on the lower surface 42b of the Z table 42 corresponding to the coil 331. Voice coil motor.

In addition, on the upper surface 43 a of the XY table 43, that is, on the surface facing the Z table 42, a radiation unit 80 that projects heat energy to the Z table 42 is disposed.
The radiating portion 80 is a substantially V-shaped plate member, and a flow path for flowing the liquid L adjusted to a predetermined temperature is formed therein. The upper surface 80a functions as a heat radiating plate that radiates the heat energy of the liquid L flowing inside.
That is, the liquid L adjusted to a predetermined temperature is caused to flow through the flow path 85, whereby the radiating unit 80 is heated or cooled to the same temperature as the temperature of the liquid L. And the heat energy according to the surface temperature is radiated | emitted from the upper surface 80a outside.
The radiating unit 80 is fixed on the XY table 43 via the heat insulating member 87, and the heat insulating member 87 is disposed so as to surround the side surface of the radiating unit 80. The thermal energy is radiated from the upper surface 80a only in the substantially Z direction.
A Z table 42 is disposed close to the upper portion of the radiating unit 80. For example, the distance between the radiating unit 80 and the lower surface of the Z table 42 can be set to about 10 mm. Therefore, most of the thermal energy radiated outward from the radiating unit 80 heats or cools the lower surface of the Z table 42 via the gas between the radiating unit 80 and the Z table 42.
The planar shape of the radiating portion 80 is preferably as large as possible because the Z table 42 can be heated or cooled in a short time. In the present embodiment, the plane shape of the radiating portion 80 is substantially V-shaped so that the support device 300 described above is avoided.

A liquid temperature control device 88 that supplies and recovers the fluid L adjusted to a predetermined temperature is connected to the flow path 85 of the radiating unit 80. The liquid temperature adjusting device 88 is controlled by the control device 50 and can adjust the liquid supply amount, the flow rate, and the liquid temperature.
A temperature sensor 86 that measures the temperature of the Z table 42 is disposed on the Z table 42, and the detection result of the temperature sensor 86 is sent to the control device 50. The control device 50 drives the liquid temperature adjustment device 88 based on the detection result of the temperature sensor 86 to control the liquid supply amount, the flow velocity, and the liquid temperature. Note that a plurality of temperature sensors 86 are preferable. This is because the entire temperature distribution of the Z table 42 is measured to realize a uniform temperature distribution.
The average temperature of the Z table 42 is obtained based on the detection results of the plurality of temperature sensors, and the supply amount of the liquid L, the liquid temperature, and the like are set by the liquid temperature adjusting device 88 so that the average temperature becomes a predetermined temperature. The temperature of the liquid L is not necessarily matched with the target temperature (predetermined temperature) of the Z table 42. If there is a predetermined relationship between the two temperatures, the liquid temperature adjusting device 88 is controlled based on the relationship to set the supply amount of the liquid L, the liquid temperature, and the like, and thereby the heat radiated from the radiating unit 80. What is necessary is just to adjust so that the Z table 42 may become predetermined | prescribed temperature with energy.
The installation position of the temperature sensor 86 is not particularly limited, and may be embedded in the Z table 42, for example.

In addition, a part or all of the liquid L supplied from the liquid temperature adjusting device 88 is also caused to flow through a flow path (not shown) formed around the drive unit 330 of the support device 300.
As a result, the drive unit 330, particularly the coil 331 is cooled, so that the heat generated by the coil 331 does not heat the Z table 42. Therefore, the Z table 42 is not affected by the drive unit 330 and is further adjusted to a constant temperature.
When the liquid L is also used for cooling the drive unit 330 of the support device 300, the liquid L is first flowed through the flow channel 85 of the radiating unit 80, and the liquid L discharged from the flow channel 85 is formed around the drive unit 330. It is sufficient to flow through the flow path. On the contrary, the liquid L used for cooling the driving unit 330 may flow through the flow path 85 of the radiating unit 80.

Next, a method for exposing the wafer PA with an image of the pattern PA of the reticle R using the above-described exposure apparatus EX will be described.
First, the reticle R is loaded on the reticle stage 20 and the wafer W is loaded on the wafer stage 40.
Subsequently, after various exposure conditions are set, under the control of the control device 50, such as reticle alignment using a reticle microscope and an off-axis alignment sensor (both not shown), baseline measurement of the alignment sensor, etc. A predetermined preparatory work is performed. Thereafter, fine alignment (enhanced global alignment (EGA) or the like) of the wafer W using the alignment sensor is completed, and arrangement coordinates of a plurality of shot areas on the wafer W are obtained.
When the preparatory work for the exposure of the wafer W is completed, the control device 50 monitors the measurement value of the laser interferometer 48 on the wafer W side based on the alignment result, and the first shot (first shot) of the wafer W. The wafer stage 40 is moved to an acceleration start position (scanning start position) for exposure in the region.
Next, the control device 50 starts scanning the reticle stage 20 and the wafer stage 40 in the Y-axis direction. When the reticle stage 20 and the wafer stage 40 reach their target scanning speeds, the pattern of the reticle R is exposed by the exposure light EL. The area is irradiated and scanning exposure is started.
Then, different areas of the pattern area of the reticle R are sequentially illuminated with the exposure light EL, and the illumination of the entire pattern area is completed, thereby completing the scanning exposure for the first shot area on the wafer W. Thereby, the pattern PA of the reticle R is reduced and transferred to the resist layer in the first shot region on the wafer W via the projection optical system 30.
When the scanning exposure for the first shot area is completed, the control device 50 moves the wafer stage 40 stepwise in the X and Y axis directions to the acceleration start position for exposure of the second shot area. That is, an inter-shot stepping operation is performed. Then, the above-described scanning exposure is performed on the second shot area.
In this way, the scanning exposure of the shot area of the wafer W and the stepping operation for the exposure of the next shot area are repeated, and the pattern PA of the reticle R is sequentially transferred to all the exposure target shot areas on the wafer W. Is done.
Then, by repeatedly performing such processing, exposure of a plurality of wafers W is performed.

In the exposure processing described above, the control device 50 has previously instructed the liquid temperature adjusting device 88 based on information from the temperature sensor 86 to supply the liquid L at a predetermined temperature to the radiating unit 80. When the exposure process is performed, the Z table 42 has already been adjusted to a uniform temperature by the thermal energy radiated from the radiating unit 80, and is maintained in a state without temperature unevenness.
For this reason, by projecting a length measuring laser beam onto the movable mirror 47 provided on the Z table 42 and receiving the reflected light, the Z table 42 and, consequently, the wafer W placed on the Z table 42 in the X and Y directions. Although the position is measured, the measurement result hardly includes the influence (error) of the temperature unevenness of the Z table 42. Therefore, the position of the wafer W in the XY direction is accurately measured, and the exposure accuracy can be improved.
Further, the wafer stage 40 drives the driving unit 330 of the support device 300 to control the position and posture (tilt angle) of the wafer W in the Z direction, and align the surface of the wafer W with the image plane of the projection optical system 30. However, since the liquid L adjusted to a predetermined temperature is caused to flow around the drive unit 330, the heat generated from the drive unit 330 is prevented from heating the Z table 42. Thereby, the occurrence of uneven temperature in the Z table 42 is prevented, and the exposure accuracy can be improved.

As described above, according to the present invention, the Z table 42 is heated or cooled by receiving the heat energy from the radiating unit 80 provided on the XY table 43, so that the temperature of the Z table 42 does not vary. It can be adjusted to a predetermined temperature.
Further, since the average temperature of the Z table 42 can be set to a predetermined temperature via the control device 50, the liquid temperature control device 88, etc., the ambient temperature at the lens tip (on the Z table 42 side) of the projection optical system 30 In addition, the ambient temperature of the measurement optical path of the laser interferometer 22 and the average temperature of the Z table 42 can be made substantially equal. Thereby, the air fluctuation caused by the air vortex generated by the movement of the XY table 43 or the like can be reduced, and the measurement error of the interferometer due to the air fluctuation is also reduced. Therefore, the position in the XY direction of the wafer W placed on the Z table 42 can be accurately measured and positioned.
Further, since it is not necessary to provide a temperature control device for the Z table 42, the weight of the Z table 42 can be reduced, and the Z table 42 is not affected by vibrations generated by flowing the liquid L.
Since the position measurement of the wafer W in the XY directions is accurate, the line width formed on the wafer W can be made uniform, and the occurrence of line width defects can be reduced. In particular, when a fine pattern is formed, it is effective and the yield can be improved.

  Although the embodiment of the present invention has been described above, the operation procedure shown in the above-described embodiment, or the shapes and combinations of the constituent members are examples, and the process is within the scope not departing from the gist of the present invention. Various changes can be made based on conditions and design requirements. For example, the present invention includes the following modifications.

  For example, the method of flowing the liquid L adjusted to a predetermined temperature as the radiating unit 80 has been described, but a Peltier element (thermoelectric element) may be used instead. Since there is no need to flow the liquid L, there is no influence of vibration and excellent maintainability.

  Further, according to the present invention, a substrate to be processed such as a wafer is separately placed as disclosed in JP-A-10-163099, JP-A-10-214783, JP-T 2000-505958, and the like. The present invention can also be applied to a twin stage type exposure apparatus having two stages that can move independently in the XY directions.

  In the above-described embodiment, the exposure apparatus in which the space between the projection optical system and the wafer is filled with gas (air or nitrogen) has been described. However, the present invention is applied to an immersion type exposure apparatus. be able to.

  In the above-described embodiment, the step-and-repeat type exposure apparatus has been described as an example. However, the present invention can also be applied to a step-and-scan type exposure apparatus. Further, the present invention is not limited to an exposure apparatus used for manufacturing a semiconductor element, but also used for manufacturing a display including a liquid crystal display element (LCD) and the like, and an exposure apparatus for transferring a device pattern onto a glass plate, and a thin film magnetic head. The present invention can also be applied to an exposure apparatus that is used for manufacturing and transfers a device pattern onto a ceramic wafer, and an exposure apparatus that is used to manufacture an image sensor such as a CCD. Furthermore, in an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer in order to manufacture a reticle or mask used in an optical exposure apparatus, EUV exposure apparatus, X-ray exposure apparatus, electron beam exposure apparatus, or the like. The present invention can also be applied. Here, in an exposure apparatus using DUV (far ultraviolet) light, VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. Further, in a proximity type X-ray exposure apparatus or an electron beam exposure apparatus, a transmission mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate.

As described in JP-A-8-330224 (corresponding USP 5,874,820), the reaction force generated by the movement of the reticle stage 20 is not transmitted to the projection optical system 30 by using a frame member. You may mechanically escape to the floor (ground).
Further, as described in JP-A-8-166475 (corresponding USP 5,528,118), a frame member is used so that the reaction force generated by the movement of the wafer stage 40 is not transmitted to the projection optical system 30. It may be used to mechanically escape to the floor (ground).

Next, an embodiment of a manufacturing method of a micro device using the exposure apparatus and the exposure method according to the embodiment of the present invention in the lithography process will be described. FIG. 4 is a flowchart showing a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micro machine, etc.).
First, in step S10 (design step), function / performance design (for example, circuit design of a semiconductor device) of a micro device is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S13 (wafer processing step), using the mask and wafer prepared in steps S10 to S12, an actual circuit or the like is formed on the wafer by lithography or the like, as will be described later. Next, in step S14 (device assembly step), device assembly is performed using the wafer processed in step S13. This step S14 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S14 are performed. After these steps, the microdevice is completed and shipped.

FIG. 5 is a diagram illustrating an example of a detailed process of step S13 in the case of a semiconductor device.
In step S21 (oxidation step), the surface of the wafer is oxidized. In step S22 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S24 (ion implantation step), ions are implanted into the wafer. Each of the above steps S21 to S24 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, in step S25 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in step S27 (development step), the exposed wafer is developed, and in step S28 (etching step), the exposed members other than the portion where the resist remains are removed by etching. In step S29 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.

  Moreover, in order to manufacture reticles or masks used not only in micro devices such as semiconductor elements but also in light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., from mother reticles to glass substrates, The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a silicon wafer or the like. Here, in an exposure apparatus using DUV (deep ultraviolet), VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. Further, in proximity type X-ray exposure apparatuses and electron beam exposure apparatuses, a transmission type mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate. Such an exposure apparatus is disclosed in WO99 / 34255, WO99 / 50712, WO99 / 66370, JP-A-11-194479, JP-A2000-12453, JP-A-2000-29202, and the like. .

It is a schematic block diagram which shows one Embodiment of exposure apparatus EX. 3 is an enlarged view of a wafer stage 40. FIG. 3 is a plan view of a radiating unit 80. FIG. It is a flowchart figure which shows an example of the manufacturing process of a microdevice. It is a figure which shows an example of the detailed process of step S13 in FIG.

Explanation of symbols

20 Reticle stage (mask stage)
40 Wafer stage (stage device, substrate stage)
42 Z table (second member, second table)
43 XY table (first member, first table)
43a Top surface (opposite surface)
DESCRIPTION OF SYMBOLS 50 Control apparatus 80 Radiation part 85 Flow path 86 Temperature sensor 87 Heat insulation member 330 Drive part (actuator)
L fluid R reticle (mask)
PA pattern W Wafer (wafer)
EX exposure equipment

Claims (11)

A temperature control method for bringing a second member supported to be movable while being separated from the first member to a predetermined temperature,
A temperature control method, comprising: radiating thermal energy from the first member to the second member to adjust the second member to a predetermined temperature.   The said thermal energy is radiated | emitted with respect to a said 2nd member from the radiation | emission part in which the at least one part of the surface facing the said 2nd member in the said 1st member was provided. Temperature control method.   The temperature control method according to claim 1, wherein the thermal energy is adjusted based on a temperature of the second member. A stage device comprising: a movable first table; and a second table supported so as to be movable while being separated from the first table while holding a substrate,
A radiating portion that is installed on at least a part of a surface of the first table facing the second table and radiates heat energy to the second table;
A stage apparatus, wherein the second table is adjusted to a predetermined temperature using thermal energy radiated from the radiating portion.   The stage device according to claim 4, wherein the radiation unit includes a flow path through which a fluid having thermal energy passes.   An actuator disposed between the second table and the first table to move the second table relative to the first table; and the fluid having the thermal energy is also used for temperature control of the actuator. The stage apparatus according to claim 5, wherein the stage apparatus is used.   The stage device according to claim 4, wherein the radiation unit includes a thermoelectric element.   The temperature sensor which detects the temperature of the said 2nd table, The control apparatus which controls discharge | release of the said thermal energy based on the detection result of the said temperature sensor is further provided, The Claims 4-7 characterized by the above-mentioned. The stage apparatus as described in any one of them.   The stage device according to any one of claims 4 to 8, wherein the radiation unit is fixed to the first table via a heat insulating member. In an exposure apparatus having a mask stage for holding a mask and a substrate stage for holding a substrate, and exposing the pattern formed on the mask to the substrate,
An exposure apparatus using the stage apparatus according to any one of claims 4 to 9 for at least one of the mask stage and the substrate stage. A device manufacturing method including a lithography process, wherein the exposure apparatus according to claim 10 is used in the lithography process.

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