JPS649622A - Manufacture of thin film element - Google Patents
Manufacture of thin film elementInfo
- Publication number
- JPS649622A JPS649622A JP16452887A JP16452887A JPS649622A JP S649622 A JPS649622 A JP S649622A JP 16452887 A JP16452887 A JP 16452887A JP 16452887 A JP16452887 A JP 16452887A JP S649622 A JPS649622 A JP S649622A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reactor
- pattern
- thin film
- projected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To make it possible to form an arbitrary thin film pattern without taking out a substrate out of a reactor, by projecting exciting light which activates a raw gas, etchant or the surface of the substrate in conformity with a specified thin film forming pattern or an etching pattern on the thin film substrate from the outside of a container. CONSTITUTION:As a raw material gas, trimethylaluminum(TMA) is supplied into a reactor 9. A mask pattern 2 is projected on a substrate 6 with CO2 laser. Then the inside of the reactor 9 is exhausted, and mixed gas of TMA and N2O at a ratio of 1:1 is introduced. An ArF excimer laser beam is projected on the substrate surface, and an Al2O3 film is formed. Then, the inside of the reactor 9 is exhausted again, and mono-silane (SiH4) is introduced, with the entire ArF laser being projected on the entire substrate. An Si film is formed in this way. Thereafter, the inside of the reactor 9 is exhausted again, and CH3Br is introduced as etching gas. The pattern 2 is projected on the substrate 6 by using the second harmonic waves of the Ar laser, and the Si film is etched. Thereafter, the inside of the reactor 9 exhausted, and TMA gas, which is diluted with helium, is introduced. The pattern 2 is irradiated with CO2 laser, and an aluminum thin film is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16452887A JPS649622A (en) | 1987-07-01 | 1987-07-01 | Manufacture of thin film element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16452887A JPS649622A (en) | 1987-07-01 | 1987-07-01 | Manufacture of thin film element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649622A true JPS649622A (en) | 1989-01-12 |
Family
ID=15794880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16452887A Pending JPS649622A (en) | 1987-07-01 | 1987-07-01 | Manufacture of thin film element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649622A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02220438A (en) * | 1989-02-22 | 1990-09-03 | Hitachi Ltd | Method and apparatus for laser treatment |
-
1987
- 1987-07-01 JP JP16452887A patent/JPS649622A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02220438A (en) * | 1989-02-22 | 1990-09-03 | Hitachi Ltd | Method and apparatus for laser treatment |
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