JPS5692197A - Production of oriented crystal thin film - Google Patents

Production of oriented crystal thin film

Info

Publication number
JPS5692197A
JPS5692197A JP16691279A JP16691279A JPS5692197A JP S5692197 A JPS5692197 A JP S5692197A JP 16691279 A JP16691279 A JP 16691279A JP 16691279 A JP16691279 A JP 16691279A JP S5692197 A JPS5692197 A JP S5692197A
Authority
JP
Japan
Prior art keywords
thin film
crystal thin
laser
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16691279A
Other languages
Japanese (ja)
Other versions
JPS6029680B2 (en
Inventor
Hidefumi Mori
Tatsuo Izawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16691279A priority Critical patent/JPS6029680B2/en
Publication of JPS5692197A publication Critical patent/JPS5692197A/en
Publication of JPS6029680B2 publication Critical patent/JPS6029680B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form an oriented crystal thin film on a crystalline or amorphous substrate by making use of the energy of electromagnetic waves and the fine periods of interference patterns.
CONSTITUTION: A laser beam of 5,145Å wavelength emitted from an Ar ion laser 11 is divided into two directions by a beam spliter 12. These are superposed on the surface of a quartz substrate 15 through the light lead-in windows 17 attached to a vacuum vessel 14 by controlling optical paths with mirrors 13. There is the relation d=λ/2sinθ between the period (d) of the interference fringes of the light of this case and the angle 2θ assumed by the two beams (λ denotes the wavelength of the light). Since 2θ=60° was employed, the period was d=0.51μm. Next, a vapor source 16 containing Si was operated to supply Si vapor and allow it to deposit on the substrate 15. It was confirmed by a reflecting electron diffraction method that in the case of laser output 7W the formed thin film 18 is a good single crystal thin film except the peipheral part of the laser irradiated region.
COPYRIGHT: (C)1981,JPO&Japio
JP16691279A 1979-12-24 1979-12-24 Method for producing oriented crystalline thin films Expired JPS6029680B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16691279A JPS6029680B2 (en) 1979-12-24 1979-12-24 Method for producing oriented crystalline thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16691279A JPS6029680B2 (en) 1979-12-24 1979-12-24 Method for producing oriented crystalline thin films

Publications (2)

Publication Number Publication Date
JPS5692197A true JPS5692197A (en) 1981-07-25
JPS6029680B2 JPS6029680B2 (en) 1985-07-11

Family

ID=15839937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16691279A Expired JPS6029680B2 (en) 1979-12-24 1979-12-24 Method for producing oriented crystalline thin films

Country Status (1)

Country Link
JP (1) JPS6029680B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623089A (en) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> Production apparatus for semiconductor
JPS6311592A (en) * 1986-07-02 1988-01-19 Matsushita Electronics Corp Production of semiconductor device
JPH0621877U (en) * 1992-04-02 1994-03-22 村田機械株式会社 Robot hand

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623089A (en) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> Production apparatus for semiconductor
JPS6311592A (en) * 1986-07-02 1988-01-19 Matsushita Electronics Corp Production of semiconductor device
JPH0621877U (en) * 1992-04-02 1994-03-22 村田機械株式会社 Robot hand

Also Published As

Publication number Publication date
JPS6029680B2 (en) 1985-07-11

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