JPH02220438A - Method and apparatus for laser treatment - Google Patents

Abstract

PURPOSE:To execute a fine processing continuously by a method wherein, while an object to be processed is being cooled, a part near a desired part is exposed to a reactant gas or the reactant gas is adsorbed and only a part irradiated with a laser beam which has been converged to form a fine spot is treated by a reaction by means of the laser beam. CONSTITUTION:The surface of a specimen 10 is irradiated with a laser beam while the laser beam is being converged to form a fine spot by means of an objective lens 8 installed inside a reaction chamber 7; while a reactant gas is being supplied to the cooled specimen 10, only a part whose treatment is required is exposed to the reactant gas, or the reactant gas is adsorbed to the surface of the specimen 10. In addition, the inside of the reaction chamber 7 is evacuated to establish a state that the objective lens 8 and a laser-beam- transmitting window 6 are not exposed to the reactant gas; only the part irradiated with the convergent laser beam is treated by a reaction caused by the laser beam. Thereby, it is possible to form a fine pattern. In addition, it is possible to execute the treatment always under a definite condition without lowering functions of the objective lens 8 and the laser-beam-transmitting window 6.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a processing method and apparatus for selectively removing a part of the surface of a semiconductor device or forming a selective thin film on the surface. The present invention relates to a laser processing method and apparatus suitable for identifying the location and cause of defects that partially exist in a prototype semiconductor device, and for repairing defects.

[Conventional technology]

2. Description of the Related Art In order to improve the performance and speed of semiconductor devices, semiconductor devices are becoming smaller and more highly integrated. Along with this, it has become difficult to develop semiconductor devices, leading to a prolonged development period. This situation shows that the cut-and-try circuit fabrication technique is safe for L8 design as well. In other words, by identifying a defective part on a chip that does not work properly in a 1 & 1 design, cutting the wiring existing in that part, placing wiring in an arbitrary place, repairing the defective wiring, and temporarily fixing the problem. By manufacturing a semiconductor device that can operate perfectly, subsequent characteristic evaluations and design changes can be made quickly.

On the other hand, as a conventional technology, for example, semiconductor data world (13 semiconductor world)
As stated on pages 27 to 32 of the September 1987 issue, 1? After using (focused ion beam) to make a hole in the surface of the LB etching chip, covering the bacipene and interlayer insulating film and exposing the wiring, CVD gas was introduced and the same process was carried out. A method for forming metal wiring is introduced.

In addition, the Vwn and interlayer I on the surface of the L8 chip
l! As a method of drilling holes in the membrane and exposing the wiring,
Photoetching techniques disclosed in Japanese Patent Application Laid-open Nos. 61-53732 and 1982-177729 can be applied.

Furthermore, as a technique for forming metal arrangement M, for example! It is possible to apply film formation using light as shown in #Open/Open/Close 50-211078.

[Problem to be solved by the invention]

Although the first conventional technique described above can perform fine hole drilling, cutting of fine wiring, and formation of fine wiring, it is impossible to avoid damage caused by accelerated ions that directly hit the underlying material. In addition, there remain problems such as the influence of electric charge and the residual presence of the ion species themselves. This is a fatal problem in a region directly above or very close to the active region of a semiconductor device (the emitter region of a side-emitting bipolar transistor).

There are second and third prior art techniques that overcome the drawbacks of processing and wiring formation using focused ion beams. In this method, a workpiece placed in an etching gas atmosphere is etched with light such as a laser. Also, the fourth
The conventional technique is to decompose a reactive gas and form a conductive film by irradiating light such as a laser onto a substrate prepared in a reactive gas atmosphere. However, these conventional techniques are not suitable for achieving finer structure or film formation.
The window for introducing s and light into the reaction chamber was also processed at the same time, and no consideration was taken to prevent the formation of a film on the window surface, resulting in a problem with semiconductor devices, which are becoming increasingly sophisticated. In order to cope with this problem, there was a problem in that extremely small processing and wiring formation could not be carried out continuously under the same conditions.

It is an object of the present invention to perform drilling operations on the protective film and non-interval insulating film of a semiconductor device, cut wiring, and add wiring of righteous thoughts without affecting the performance of the semiconductor device. It is an object of the present invention to provide a laser processing method and a laser processing apparatus that can continuously carry out fine processing and placement under the same conditions.

[Means to solve the problem]

In order to achieve the above object, in the laser processing method of the present invention, laser light is irradiated after condensing the light into a fine spot using a high NA objective lens in a vacuum, and the semiconductor device being processed is lft - While cooling, the tree near the desired location requiring treatment is exposed to the reactive gas, or the reactive gas is adsorbed (so that the laser beam is focused only on the area on the semiconductor device where the laser beam is focused). The treatment is carried out by induced nine reactions.

Further, the laser processing apparatus of the present invention includes a laser oscillator, an objective lens for condensing the oscillated laser light into a fine spot, a reaction chamber equipped with a laser transmission window, and a sample (semiconductor device) mounted thereon. It consists of a stage with cooling means, a vacuum bonder for evacuating the reaction chamber to a high vacuum, a cylinder containing a reaction gas, and a nozzle for supplying the reaction gas into the reaction chamber, and emits the oscillated laser beam. The objective lens installed in the reaction chamber irradiates the sample surface while focusing it on a fine spot, and the reaction gas is supplied from the nozzle to the cooled sample surface, exposing only the parts that need to be treated to the reaction gas. Alternatively, by adsorbing the reactive gas on the sample surface and constantly evacuating the reaction chamber, the objective lens and laser beam transmission window are not exposed to the reactive gas, and the laser beam induces the reaction only in the area where the laser beam is focused and irradiated. The structure is such that processing can be carried out by the reaction that occurs.
It is something that was given.

[Effect]

In the present invention, since a high NA objective lens is installed in the processing chamber, the laser beam can be focused finely, and it is also possible to use an optical system that projects a rectangular aperture provided in the optical path onto the sample surface. , can process rectangular parts of arbitrary size.

In addition, a reactive gas (etch gas or CVD material gas) is flowed while the sample is cooled to cause gas molecules to be adsorbed onto the sample surface, and the laser is irradiated when the gas pressure reaches a point where no reaction occurs anywhere other than the sample surface. No reaction occurs on surfaces other than the sample surface, and the objective lens surface and the laser beam introduction window surface will not be etched or M will be formed and their functions will not be degraded.

In addition, it is possible to open a window to the membrane on the surface of a semiconductor device or cut wiring by switching between multiple gases or by installing multiple nozzles and sequentially flowing the etching gas and CVD material gas through the pipes. , the connection between wires can be performed with t-1 devices, and since the process uses a photoreaction, damage to the semi-thin device can be prevented.

Here, the nozzle 15 is designed so that the etching gas can be rapidly turned on and off, for example, as shown in FIG.
It can be opened and closed by moving the needle 30 at the tip of 5 back and forth. A magnet, a piezo element, or the like can be used to drive the needle 30.

〔Example〕

The present invention will be explained below with reference to the drawings. FIG. 1 shows the overall configuration of a laser processing apparatus which is an embodiment of the present invention.

The sea light 2 oscillated from the laser oscillator 1 is converted into a second harmonic wave by the second harmonic generator 3, and the sample iC is vertically bent by the dichroic mirror 5 and transmitted through the transmission line 6t. Afterwards, the light is focused by an objective lens 8 disposed inside the chamber 7 and is focused on the semiconductor device 1 which is a sample on the stage 9.
irradiated to 0. The inside of the chamber 7 is evacuated by the vacuum bonder 11 through the exhaust pipe 114. These exhaust W116
and the vacuum pump 11 constitute exhaust means. On the other hand, the gas to be processed is supplied from a gas cylinder 12 to a pipe 13. Gas chamber 14 for keeping gas pressure constant. It is supplied onto the surface of the sample 10 through a nozzle 15, which is a spraying section, and after being evacuated by a vacuum pump 11, which is an exhaust means, it is rendered harmless by an exhaust gas treatment device 16, and then discharged. These gas chambers 1
4 and nozzle 15 are the spray supply section. In addition, the positioning and observation of the sample 10 are performed using the illumination light source 17 and the eyepiece lens 18. Or the imaging lens 19. TV camera20. This is done using the monitor 21. Note that the stage 9 is provided with a heat exchanger 22 for circulating and cooling the refrigerant, and is configured to be able to compress and freeze the refrigerant using a refrigerator 23.

An etching method according to an embodiment of the present invention will be described using the apparatus configured as described above. As shown in FIG. 1, with the sample 10 placed on the loading table 9, the inside of the chamber 7 is filled with a vacuum bonder 11 as an evacuation means, such as a turbo molecular pump (
Here, an oil rotary pump for evacuating the secondary side is not shown) to maintain a vacuum level of 1xjOTOrr or less. Further, the sample 10 is cooled to about -100° C. or lower by a heat exchanger 22, which is a cooling means provided in the stage 9, using liquid nitrogen as a refrigerant. In this state, the third
Etching gas, such as chlorine gas, is sprayed onto the sample 10 for a certain period of time from a nozzle 15, which is a spraying part shown in the figure.

At this time, the etching gas pressure in the vicinity of the sample 10 rises rapidly, and then falls in a rapid wave by closing the nozzle 15, which is the spraying part. At this time, the surface of the sample 10 is cooled to below -100ti, so an adsorption layer for the etching gas is formed.However, since the surfaces of the objective lens 8 and window 60 are kept warm, the adsorption layer is formed immediately. , will be removed. When the etching gas pressure becomes less than the pressure that activates the laser beam by pressing the 4 button and causes etching,
On sample 1o.

Laser light 4 is irradiated. The etching gas forming the adsorption layer is activated by this laser beam 4.

It reacts with the substance on the surface of the sample 10, producing a vaporizable reaction product, and as a result, etching progresses. Naturally, the laser beam 4 stops before the etching gas is supplied from the nozzle 15, which is the spray section. Through these series of operations, sample 1
The laser beam 4 is irradiated on the 0 surface, and etching progresses only on the 9 portions by an amount corresponding to the thickness of the adsorption layer. That is, nozzle 1
Pressure of etching gas blown out from 5, (ili 1 degree)
By keeping the irradiation time of the laser beam 4 constant at a degree of the sample 1o, the amount of etching in one operation shown in FIG. 2 becomes constant, and the amount of etching can be easily and accurately set. On the other hand, the objective lens 8 and the laser transmission window 6 do not undergo etching, are not damaged, and do not have their laser beam transmittance reduced. Furthermore, since the objective lens 8 is installed in the chamber 7, it is possible to select one with a short working distance (and a large Nm), so that fine processing can be performed.

Next, 91 regarding a processing method which is another embodiment of the present invention.
ITl using diagrams! I will clarify. In this embodiment, CVD gas is used as the processing gas, and as shown in FIG. 5, it is sprayed onto the sample 10 from a nozzle 15 for a certain period of time. As the CVD gas, for example, alkyl metal or carbonyl metal vapor is selected. At this time, the CV near the sample 10
The D gas pressure increases rapidly, and then decreases rapidly by closing the nozzle 15.

At this time, the surface of the sample is cooled to less than 1100 degrees Celsius, and an adsorption layer of CVD gas is formed, while the surfaces of the objective lens 8 and quindo 6 are kept at room temperature, so they are not adsorbed. Even if a layer is formed, it is immediately removed. When the O'FD gas pressure becomes pressure wind "FK" that decomposes and deposits metal by the laser beam 4, the sample 10 is irradiated with the laser beam 4.
When the reaction of decomposing the gas and depositing gold and silver on the sample 10 is completed, the laser beam 47 is stopped. The PJX4 formed by this one operation is determined by the thickness of the adsorption layer, the CVD gas pressure (-degrees) blown out from the nozzle 15, and the sample 10.
By keeping the temperature and the irradiation time of the laser beam 4 constant, the thickness of the film formed in one operation can be reduced to just one, and the metal film thickness can be set easily and accurately.

Further, by moving the position where the laser beam 4 is irradiated, arbitrary wiring can be formed. On the other hand, since no metal is deposited on the surfaces of the objective lens 8 and the quind 6, the transmittance of the laser does not decrease. Further, the objective lens 8 is installed in the chamber 7, and it is possible to select one having a working distance of 1 and a large value of N.

Therefore, fine wiring can be formed.

Next, a processing device as another embodiment will be explained using FIG. 4. Oscillation from the Ar laser oscillator 41.

The generated laser beam 42 is converted into a second harmonic wave 44 by a second harmonic generator 43, and a mirror 45. Dichroic′
It is formed into an arbitrary rectangle by a rectangular slit 47 via a mirror 46, and is projected as a projected image of the trap rectangular slit 47 on the sample 10 by an objective lens 51C installed in the chamber 7 via half mirrors 48, 49 and a quind 50.・Irradiated. The inside of the chamber 7 is evacuated by the vacuum pump 11 through the exhaust pipe 114. On the other hand, the treated gas is supplied from the gas cylinder 12 to the pipe 15. Gas chamber 14 for keeping gas constant
．． It is supplied to the surface of the sample 10 through the nozzle 15, exhausted by the vacuum pump 11, rendered harmless by the exhaust gas treatment device 16, and then discharged.

In addition, the positioning and observation of the sample 10 is performed using the illumination light source 17. Eyepiece 18. Or the imaging lens 19. TV camera 20° monitor 21! Do it from lt. Further, a light #51 for positioning the rectangular slit 47 is provided. Further, the stage 9 is provided with a heat exchanger 22 for circulating and cooling the refrigerant, and a refrigerator 23 is configured to compress and freeze the refrigerant. The etching method using this device will be described below. Sample 1 is placed on the stage 9 shown in Figure 4.
0 is placed, the inside of the chamber 7 is maintained at a vacuum level of, for example, 1×10 τorr' or less by a vacuum pump 11. In addition, the sample 10 is placed in a heat exchanger 22 installed in the stage 9.
It uses liquid nitrogen as a refrigerant and is cooled to below -100°C. In this state, an etching gas such as chlorine gas is sprayed onto the sample 10 from the nozzle 15 for a certain period of time. At this time, the etching gas pressure near the sample 10 rises rapidly, and when the nozzle 15 is closed, it drops rapidly. At this time, test 1) 10 surface is -10011
Since the etching gas is cooled below, an adsorption layer of the etching gas is formed, but since the surfaces of the objective lens 8 and the wind 60 are kept at room temperature, any adsorption is removed immediately even if it is formed.

The light from the reference light source 50 is shaped into a rectangle using a rectangular slit 47 in advance, and the projected image is projected onto the sample 10 while being observed through the eyepiece 18 or monitor 21 to adjust the position and size to be processed. (After that, by irradiating the laser beam 44, the laser beam 44 is projected and irradiated at the same position and size as the projection image of the rectangular slit 47 by the reference beam, and the laser beam 44 is projected and irradiated at the same position and size as the projected image of the rectangular slit 47 by the reference beam. Only then, the etching gas forming the adsorption layer becomes activated and reacts with the substance on the surface of the sample 10, producing a vaporizable reaction product, so that etching progresses. The laser beam 44 is stopped before the introduction of the etching gas is started.By these series of operations, a certain amount of etching progresses, and the setting of the etch violet is easy and accurate as shown in the previous embodiment. As stated above, it is also possible to process fine dimensions because a high NA objective lens can be selected.Furthermore,
Since only the central portion of the laser beam 44 is used, a substantially constant power density can be obtained in the irradiation area, and the etch rate inside the irradiation area can also be made uniform. Furthermore, although etching has been explained in this embodiment, it is possible to form a metal film pattern by using alkyl metal, metal carbonyl vapor, etc. instead of etching gas.
Same as previous example.

Here, in the apparatus shown in Fig. 1 and Fig. 4,
We have described the case where either etching gas or CVD gas is used as the processing gas, but it is also possible to have multiple gas pumps, piping, and gas chambers and use multiple types of gas at all times or alternately. From a trap
The range of applications will further expand. As one application example, a processing method using three types of gas will be explained with reference to FIG. FIG. 5(8) shows a cross section of the semiconductor device.

That is, the first layer An wiring 621 interlayer insulation group (jlioz) 6L second layer A1 wiring 64° protection % (810z) 65 is formed on the 8i substrate 60 via the K5to2 film 61. This semiconductor device is placed on the device button shown in FIG. 1 or 4, and first a fluorine-based etching gas, for example OF4. A nozzle 15 blows out BF4 to form an adsorption layer on the cooled semiconductor device, and a portion requiring wiring connection is irradiated with ultraviolet laser light 70 to advance etching with the adsorbed etching gas. By repeating this operation, one window 66, 67 and a hole 68 for cutting the wiring are formed as shown in FIG. 5+1)). Next, switch to a chlorine-based etching gas, such as 0011a, Ofh, etc., and apply ultraviolet laser light 70 only to the required portions in the same manner as when holes 66, 67, and 68 were formed in the B102 films 65 and 65. Irradiate the trap L as shown in Figure 5 (0).
A portion 69 of the wiring is cut. Next, the gas shown in FIG. 5(d) is switched to a CVD gas such as metal carbonyl or alkyl metal vapor, and the windows 66 and 67 are sequentially irradiated with ultraviolet radiation F70 to fill them with metal. After that, the window part 66 and the g part 67
By repeating the irradiation of the laser beam 70 while sequentially moving between 0 and 0, a jumper 971 can be formed as shown in FIG. 5 (6), and the correction is completed.

The current process will now be explained with reference to FIG.

FIG. 6 is a top view of a region including the cross section shown in FIG. 5, showing an interlayer insulating film 63. The protection [65 is not shown because it is transparent. FIG. 6(a) shows the state before correction. With the recent miniaturization of the L8 process, the pitch of the mu1 wiring 62.64 has also become smaller, the wiring +11 width α8μm, the space α8
μ Karasu (so-called α8μ horse process) is adopted, α5μ
Development of the horse process has also begun. In the case of the α5 μm process, the sizes of the connection holes 66 and 67 and the cut portion 69 need to be 1 μm or less (this does not apply if there are no other wirings around). That is, in the apparatus shown in FIG. 1, it is necessary to condense the projected image of the slit 47 to a spot diameter of 1 .mu.m or less, and in the apparatus shown in FIG. 4, to a diameter of 1 .mu.m or less. For this purpose, an objective lens with a small focal length (or working distance 11i) and a large aperture a (M) is installed inside the chamber 7, immediately above the sample 10. As the working distance, it is possible to adopt an objective lens of (L5JII or less) and the numerical aperture N is α6 to α9, so it is easy to obtain a spot diameter of about 1μ. 67, adjacent wirings are not exposed and unnecessary short circuits do not occur.

In addition, the cutting portion (59) does not require cutting the adjacent wiring, and the jumper wire 71 can also be miniaturized, allowing modification of the wiring density with high density.

In this way, the surfaces of the objective lens and window are not etched or coated with metal films, and a constant laser light transmittance is always maintained, allowing for fine etching and film formation with a single device.

Furthermore, since all of the above processing is performed by photoreaction using a laser as a light source, it is possible to evaluate the characteristics of a semiconductor device and identify or repair a defective part without damaging the semiconductor device.

Next, regarding another implementation harmonization, the 8g7 diagram will be explained.

From the apparatus shown in FIG. 1 or 4, an adsorption layer 76 of tri-iso-butyl-aluminum vapor is deposited on the substrate 75.
is formed, and the portion to be formed is irradiated with ultraviolet laser light 77 to form an aluminum pattern for 7 days.

Next, an adsorption layer 79 of tri-methyl gallium is formed, and the portion to be formed is irradiated with laser light 77 outside VcX to form a layered pattern 80 of aluminum and gallium.

Furthermore, an adsorption layer 81 of arsine gas is formed, and the portion to be formed is irradiated with ultraviolet laser light 77 to form a layered pattern 82 of aluminum, gallium, and arsenic. Since this procedure is busy,
Single layer thin film pattern 8 each having a film thickness of 1 to several atomic layers
2 can be formed directly. Furthermore, by applying heat to this laminated pattern 82 on the substrate 75, Ga-11
- The thin film pattern 83 of the film 8 can be formed. The thickness of this thin film pattern 85 can be easily and accurately controlled by repeating the steps from to to f in FIG. 7.

Further, as shown in FIG. 8, a mixed adsorption layer 86 of the three types described above can be formed on the substrate 85 by changing the mixing ratio of triisobutylaluminum, trimethylgazicum, and arsine in advance in a gas chamber. There is an ultraviolet laser 8
By partially irradiating the Ga layer 7, an ultra-thin film pattern 89 of the Ga layer L layer 8 can be directly formed. This film thickness can be easily and accurately controlled by repeating adsorption and laser irradiation.

In the above-mentioned unexploded rupture &, liquid nitrogen is used as a means to cool the sample 10, but the same effect can be obtained by using other liquefied gases or by installing a cooling section using the Peltier effect. is clear.

In addition, although the second harmonic of the MU laser has been explained as a laser source, ultraviolet light sources such as excimer laser, YAG
Third and fourth harmonics of lasers or glass lasers can be used.

In addition, in this embodiment, the processing gas was ejected from the nozzle in pulses, and the laser light was irradiated after the gas pressure at the objective lens or the laser light transmission window was sufficiently reduced. By adjusting the volume and pumping speed of the vacuum pump, etching or C
While the VD reaction progresses, if the gas pressure can be maintained at a level that prevents the etching or O'VD reaction from progressing in the objective lens or the quindo, the laser beam can be irradiated while always discharging a constant amount of gas from the nozzle. You can also do that. Even in this case, the objective lens and laser beam transmission window installed in the chamber will not be damaged by etching, and the laser beam transmittance will not change due to film formation, and fine patterns can always be formed under constant conditions.

In Fig. 4, by installing a photomask instead of the rectangular slit 47, a complex pattern can be formed once.

〔Effect of the invention〕

According to the present invention, there is an effect that it is possible to form a fine pattern by focusing light on a fine spot. Furthermore, with the unfired BAK, it is possible to use a high Nm objective lens and to form a fine pattern by condensing light into a fine spot. Furthermore, according to the present invention, the reaction gas is exposed or adsorbed to the part that requires treatment while the sample is being cooled, and then a reaction is induced by laser light, which may cause damage to the objective lens or the laser light-transmitting quindo. Also, it has the effect of allowing drilling to be carried out under constant conditions without reducing the transmittance.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of a laser treatment device according to an embodiment of the present invention;
Figure 2 is an enlarged view of the nozzle tip, Figure 5 is a diagram showing the relationship between the nozzle and the laser beam on, oyy, and gas pressure.
FIG. 5 is a block diagram of a laser processing apparatus according to another embodiment of the present invention, FIGS. FIG. 8 and FIG. 8 are explanatory diagrams each showing the case of forming a multi-element metal alloy. DESCRIPTION OF SYMBOLS 1... Radar oscillator, 6... Window, 7... Chamber, 8... Objective lens, 9... Stage, 15...
... Nozzle, 47... Rectangular sushit, 65... Protective film, 21... Jumper wire, 82... Laminated film, 85...
...Alloy film.

Claims (1)

[Claims] 1. A spray unit sprays and supplies a reactive gas to a desired surface portion of a substrate installed in a processing chamber, cools the substrate, and sprays the reactive gas onto a desired surface portion of the substrate. After forming an adsorption layer, the excess reaction gas existing around the substrate is exhausted, and reaction energy is given to the adsorption layer adsorbed on a desired surface portion of the substrate by focused laser light, and the reaction energy is applied to the adsorption layer on the substrate. A laser processing method characterized by inducing a reaction and processing a desired portion of a substrate. 2. The laser processing method according to claim 1, wherein the substrate is etched by using the reaction gas as an etching gas. 3. The laser processing method according to claim 1, wherein the CVD process is performed on the substrate using a CVD gas as the reaction gas. 4. The spray unit selectively sprays and supplies etching gas and CVD gas to a desired surface portion of a substrate installed in a processing chamber, cools the substrate, and switches and sprays the gas to a desired surface portion of the substrate. After that, excess etching gas and CVD gas existing around the substrate are exhausted, and reaction energy is applied to each adsorption layer adsorbed on the substrate by a focused laser beam. A laser processing method characterized in that a reaction is induced on a substrate and a desired portion of the substrate is subjected to etching or CVD processing. The spray unit selectively sprays and supplies a plurality of CVD gases to a desired surface portion of a substrate installed in a processing chamber, cools the substrate, and then sprays and supplies the CVD gases to the desired surface portion of the substrate. After each adsorption layer is formed, excess CVD gas existing around the substrate is exhausted, reaction energy is given to each adsorption layer adsorbed on the substrate by focused laser light, and reaction occurs on the substrate. 1. A laser processing method characterized by forming a layered pattern by forming thin films of different materials by inducing CVD processing on each desired location of a substrate. 6. A reaction chamber equipped with a transmission window, a spray supply unit that sprays and supplies a reaction gas to a desired surface portion of a substrate installed in the reaction chamber, and a spray supply unit that cools the substrate to spray a desired surface portion of the substrate. a cooling means for forming an adsorption layer for the reaction gas;
Exhaust means for exhausting excess reactive gas existing around the substrate; and forming an adsorption layer of reactive gas on a desired surface portion of the substrate by the cooling means; After exhausting the reactive gas, a focused laser beam is irradiated through the transmission window to give reaction energy to the adsorption layer, induce a reaction on the substrate, and treat a desired portion of the substrate. A laser processing device comprising a processing means. 7. The laser processing apparatus according to claim 6, wherein an objective lens for focusing the laser beam on a desired location on the substrate is installed between the substrate and the transmission window in the reaction chamber. 8. The laser processing apparatus according to claim 7, further comprising a projection image forming means for forming a projection image at a desired location on the substrate, which is installed in the optical path of the laser beam. 9. The laser processing apparatus according to claim 8, wherein the projection image forming means is formed by a rectangular slit. 10. The laser processing apparatus according to claim 8, wherein the projection image forming means is formed by a mask. 7. The laser processing apparatus according to claim 6, wherein the laser processing apparatus is installed in a. 12. The laser processing apparatus according to claim 11, wherein the projection image forming means is formed by a rectangular slit. 13. The laser processing apparatus according to claim 11, wherein the projection image forming means is formed by a mask. 14. The laser processing apparatus according to claim 6, wherein the blowing supply section is configured to blow out and stop the reaction gas at the tip. 15. The laser processing apparatus according to claim 7, wherein the blowing supply section is configured to blow out and stop the reaction gas at the tip. 16. The laser processing apparatus according to claim 8, wherein the blowing supply section is configured to blow out and stop the reaction gas at the tip.