JPH04295851A - Photomask correcting device - Google Patents

Photomask correcting device

Info

Publication number
JPH04295851A
JPH04295851A JP3082910A JP8291091A JPH04295851A JP H04295851 A JPH04295851 A JP H04295851A JP 3082910 A JP3082910 A JP 3082910A JP 8291091 A JP8291091 A JP 8291091A JP H04295851 A JPH04295851 A JP H04295851A
Authority
JP
Japan
Prior art keywords
photomask
laser
laser beam
metallic film
slit mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3082910A
Other languages
Japanese (ja)
Other versions
JP3044811B2 (en
Inventor
Shingo Murakami
進午 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8291091A priority Critical patent/JP3044811B2/en
Publication of JPH04295851A publication Critical patent/JPH04295851A/en
Application granted granted Critical
Publication of JP3044811B2 publication Critical patent/JP3044811B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/047Coating on selected surface areas, e.g. using masks using irradiation by energy or particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laser Beam Processing (AREA)

Abstract

PURPOSE:To form a metallic film in a rectangular shape with good edging accuracy. CONSTITUTION:A consecutive excitation Q switch Nd:YAG laser (SHG) 10 by which high repetitive pulse output is obtained is used as a laser. A beam expander 9 and a slit mechanism 7 are arranged in a laser optical path, and a rectangular laser beam whose intensity distribution is uniform is projected to a photomask 3 in a chamber 2 by an objective lens 8. Stock gas A flowing on the surface of the photomask 3 is dissociated at a part irradiated with the rectangular laser beam, and the metallic film is formed on the photomask 3. By moving the photomask 3 on an XY stage 6, the metallic film is formed in a belt shape. The width of the metallic film in such a case is changed by varying the distance between the knife edges 7 of the slit mechanism 7.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はフォトマスクの白欠陥を
修正する装置に係わり、とくにレーザCVD技術を用い
たフォトマスク修正装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for repairing white defects on a photomask, and more particularly to a photomask repair apparatus using laser CVD technology.

【0002】0002

【従来の技術】フォトマスクの白欠陥すなわち欠損欠陥
を修正するための修正方法としては、FIB(Focu
sed Ion Beam;集束イオンビーム)を用い
るものと、レーザ光を用いるものが提案されている。後
者のレーザ光を用いるものは、更に紫外レーザ光を使用
する光CVD(photolytic chemica
l vaper deposition) 技術を応用
するものと、主にレーザ光による対象の加熱効果を利用
する熱CVD(pyrolytic chemical
 vaper deposition)技術を使用する
ものとに分けることができる。
2. Description of the Related Art FIB (Focus
A method using a focused ion beam (sed ion beam) and a method using a laser beam have been proposed. The latter method uses photolytic chemical vapor deposition (CVD), which uses ultraviolet laser light.
vapor deposition) technology, and thermal CVD (pyrolytic chemical vapor deposition), which uses the heating effect of laser light on the target.
(vaper deposition) technology.

【0003】前者のFIBを利用する装置は、後者のレ
ーザ光を用いる装置に比べてビームの集束径を直径0.
1〜0.5μm程度と小さくすることができる。したが
って、高精度の修正が可能となる。しかしながら、原料
ガスが希薄な状態でなければ装置を作動することができ
ないために炭素膜の堆積速度が遅く、10μm角の領域
に光学濃度2.5〜3程度の炭素膜を堆積する場合には
、1000秒程度の時間を要する。また、動作中に1×
10−6Torr程度の高真空を維持する必要があり、
真空容器を大きくすることができない。
Compared to the latter device using laser light, the former device using FIB has a beam focusing diameter of 0.5 mm.
It can be made as small as about 1 to 0.5 μm. Therefore, highly accurate correction is possible. However, since the device cannot be operated unless the raw material gas is in a dilute state, the deposition rate of the carbon film is slow. , it takes about 1000 seconds. Also, during operation, 1×
It is necessary to maintain a high vacuum of about 10-6 Torr.
The vacuum container cannot be made larger.

【0004】したがって、前者のFIBを利用する装置
は大型の基板への対応が困難であり、これまでに装置化
されているフォトマスク修正装置では、7インチ角の基
板が限度となっているという問題がある。このため、特
別に高精度が要求される用途以外の一般的なフォトマス
クあるいはLCD(Liquid Crystal d
isplay;液晶ディスクプレイ)用の大型のフォト
マスクについては、この装置を適用できないのが現状で
ある。
[0004] Therefore, it is difficult for the former FIB-based device to handle large substrates, and the photomask repair devices that have been developed so far are limited to 7-inch square substrates. There's a problem. For this reason, general photomasks or LCD (Liquid Crystal d
Currently, this device cannot be applied to large photomasks for use in iPlay (liquid crystal display).

【0005】[0005]

【発明が解決しようとする課題】一方、後者のレーザを
用いるフォトマスクの白欠陥修正装置のうち、紫外レー
ザを用いる装置では、紫外光を用いるためにレンズ材が
限定され、装置の設計が困難であるという問題があった
。しかも、この装置で観察とレーザ加工を兼ねる対物レ
ンズは紫外域と可視域の間で色消しを行う必要があり、
その製作が困難である等、光学系の構成上に問題があっ
た。また、この後者の装置では光解離反応が主体となる
ために、レーザ光を導入する窓材へもCVDによる薄膜
の堆積が生じ、窓の透過率が低下していわゆる窓曇りが
生じるといった問題があった。
[Problems to be Solved by the Invention] On the other hand, among the latter photomask white defect correction devices that use a laser, in the device that uses an ultraviolet laser, lens materials are limited due to the use of ultraviolet light, making it difficult to design the device. There was a problem that. Moreover, the objective lens used for both observation and laser processing in this device must be achromatized between the ultraviolet and visible regions.
There were problems with the configuration of the optical system, such as the difficulty of manufacturing it. In addition, in this latter device, since the photodissociation reaction is the main one, a thin film is deposited by CVD on the window material through which the laser light is introduced, reducing the transmittance of the window and causing so-called window fogging. there were.

【0006】このため、可視レーザ光とその加熱効果を
利用する方が、より実用性の高いフォトマスク修正装置
を構成することができる。
[0006] Therefore, a more practical photomask repair apparatus can be constructed by using visible laser light and its heating effect.

【0007】ところで、レーザ光による加熱効果を利用
した従来のフォトマスク修正装置では、レーザとして連
続発振を行うアルゴンレーザを使用しており、レーザ光
は単にスポット状に集光して使用している。このため、
レーザ光照射部周辺への熱拡散が大きくなり、レーザ光
の集光径よりもはるかに広い幅で薄膜の堆積が生じると
いう問題を有していた。なお、J.K.Tison a
nd M.G.Cohen,Solid State 
Technology,Feb.(1987),”La
ser in Mask Repair”の第113ペ
ージにおける図2(Fig.2 )に示した写真を参考
にされたい。
By the way, conventional photomask repair equipment that utilizes the heating effect of laser light uses a continuous oscillation argon laser as the laser, and the laser light is simply focused into a spot. . For this reason,
There was a problem in that heat diffusion to the vicinity of the laser beam irradiation area increased, and a thin film was deposited in a width much wider than the condensing diameter of the laser beam. In addition, J. K. Tison a
ndM. G. Cohen, Solid State
Technology, Feb. (1987), “La
Please refer to the photograph shown in Fig. 2 on page 113 of ``Ser in Mask Repair''.

【0008】そこで本発明の目的は、可視レーザ光とそ
の加熱効果を利用し、しかもレーザ光照射部周辺への熱
拡散をできるだけ抑えることにより、エッジ精度良く金
属膜を形成することのできるフォトマスク修正装置を提
供することにある。
Therefore, an object of the present invention is to provide a photomask that can form a metal film with high edge precision by utilizing visible laser light and its heating effect and by suppressing heat diffusion to the vicinity of the laser light irradiated area as much as possible. The purpose of this invention is to provide a correction device.

【0009】[0009]

【課題を解決するための手段】請求項1の発明は、解離
反応により金属の堆積を可能とする化合物気体を含む雰
囲気に接するフォトマスク表面にレーザ光を照射し、主
に化合物気体の熱分解によりレーザ光照射部に選択的に
形成した金属薄膜、または、レーザ光を前記したフォト
マスクに対して相対的に走査してフォトマスク上に帯状
に堆積した金属薄膜により、フォトマスク上の白欠陥を
修正するように構成したフォトマスク修正装置に、、例
えば1KHzといった所定の周波数以上の周波数でレー
ザパルスを出力できるレーザと、フォトマスク上に照射
するレーザ光を矩形状に整形する整形手段と、矩形状に
整形されたレーザ光の強度分布を均一にする均一化手段
とを具備させた構成としたものである。
[Means for Solving the Problems] The invention as claimed in claim 1 is a method for irradiating laser light onto the surface of a photomask that is in contact with an atmosphere containing a compound gas that enables the deposition of metal through a dissociation reaction, and mainly thermally decomposing the compound gas. A metal thin film selectively formed on the laser beam irradiated area by laser beam irradiation, or a metal thin film deposited in a band shape on the photomask by scanning the laser beam relative to the photomask, eliminates white defects on the photomask. A photomask repairing device configured to correct a photomask includes: a laser capable of outputting a laser pulse at a frequency higher than a predetermined frequency, such as 1 KHz; and a shaping means for shaping the laser beam irradiated onto the photomask into a rectangular shape. The structure includes a uniformizing means for uniformizing the intensity distribution of the rectangularly shaped laser beam.

【0010】請求項2記載の発明は、レーザ光を矩形に
整形する整形手段として、周縁部にナイフエッジ部を有
しかつ可変可能な開口部を備えたスリット機構を用いた
ものである。
[0010] According to the second aspect of the invention, a slit mechanism having a knife edge portion at the peripheral edge and a variable opening is used as the shaping means for shaping the laser beam into a rectangular shape.

【0011】請求項3記載の発明は、レーザ光の光路中
にアッテネータを配置した構成としたものである。
[0011] According to the third aspect of the invention, an attenuator is arranged in the optical path of the laser beam.

【0012】0012

【作用】本発明によれば、矩形状に整形されたレーザ光
がフォトマスク表面にイメージ転写されるため、フォト
マスク上のパターンに沿ってエッジ精度の良い金属膜を
任意の大きさを形成することが可能となる。
[Operation] According to the present invention, since the laser beam shaped into a rectangular shape is image-transferred onto the photomask surface, a metal film of any size with good edge precision can be formed along the pattern on the photomask. becomes possible.

【0013】[0013]

【実施例】以下実施例につき本発明を詳細に説明する。EXAMPLES The present invention will be explained in detail with reference to Examples below.

【0014】図1は本発明に係わるフォトマスク修正装
置の一実施例を示す概略構成図である。本実施例の装置
では、CVDの原料としてモリブデンカルボニル(Mo
(CO)6 )を、また、レーザとして連続励起Qスイ
ッチNd:YAGレーザ(以下、CW−YAGレーザと
称する。)の第2高調波(SHG:波長0.53μm)
を使用している。
FIG. 1 is a schematic diagram showing an embodiment of a photomask repair apparatus according to the present invention. In the apparatus of this embodiment, molybdenum carbonyl (Mo) is used as a raw material for CVD.
(CO)6) and the second harmonic (SHG: wavelength 0.53 μm) of a continuously pumped Q-switched Nd:YAG laser (hereinafter referred to as CW-YAG laser) as a laser.
are using.

【0015】Mo(CO)6 のような金属カルボニル
は室温で固体または液体なので、加熱・気化させて使用
する。本実施例では、リザーバ1内で50°Cで気化さ
せて使用する。このときの飽和蒸気圧は、化学大辞典(
共立出版、東京)、P294、「モリブデンカルボニル
」にも示されているように1.4Torrである。キャ
リアガスとしてはアルゴンガスを用い、流量250cc
/分〜500cc/分で使用する。
Metal carbonyls such as Mo(CO)6 are solid or liquid at room temperature, so they are heated and vaporized before use. In this example, it is vaporized at 50° C. in the reservoir 1 and used. The saturated vapor pressure at this time is given by the Encyclopedia of Chemistry (
Kyoritsu Shuppan, Tokyo), P294, as shown in "Molybdenum Carbonyl", it is 1.4 Torr. Argon gas is used as carrier gas, flow rate 250cc
Use at a rate of 500 cc/min to 500 cc/min.

【0016】図1に示すように、原料ガスAはリザーバ
1から取り出されたキャリアガスBと共に、気密の保た
れたチェンバ2内へ導かれる。原料ガスAはチェンバ2
内のフォトマスク3の表面を流れる。チェンバ2上面に
はガラス窓4が設けられており、これを介してレーザ光
がフォトマスク3上に集光される。このレーザ光の集光
部にて、CVDによるMo膜の堆積が生ずる。チェンバ
2中のフォトマスク3は原料ガスAとの温度バランスを
とり、Mo(CO)6 がフォトマスク3上に析出せず
、しかも、表面への吸着量を制御し、Mo膜の堆積速度
を制御するために、ヒータ5にて50°C程度に加熱さ
れている。原料ガスAはフォトマスク3の表面を流れた
後、排気ガス処理部14に導かれ、処理された後、排気
ガスCとして排出されるようになっている。
As shown in FIG. 1, raw material gas A is guided into a chamber 2 which is kept airtight together with carrier gas B taken out from a reservoir 1. Raw material gas A is in chamber 2
It flows on the surface of the photomask 3 inside. A glass window 4 is provided on the upper surface of the chamber 2, through which the laser beam is focused onto the photomask 3. A Mo film is deposited by CVD at the condensing portion of this laser beam. The photomask 3 in the chamber 2 maintains a temperature balance with the source gas A so that Mo(CO)6 does not precipitate on the photomask 3, and also controls the amount of adsorption onto the surface to reduce the deposition rate of the Mo film. For control purposes, it is heated to about 50°C by a heater 5. After the raw material gas A flows on the surface of the photomask 3, it is led to the exhaust gas processing section 14, where it is treated and then discharged as exhaust gas C.

【0017】このフォトマスク修正装置では、レーザ光
を導入する光学系は固定とし、XYステージ6でフォト
マスク3を移動することにより、Mo膜を帯状に形成す
る方法を採用している。
This photomask repairing apparatus employs a method in which the optical system for introducing laser light is fixed and the photomask 3 is moved on an XY stage 6 to form a strip-shaped Mo film.

【0018】ところで、このフォトマスク修正装置では
、フォトマスク3上に照射するレーザ光を矩形に整形す
るために、開口部7Aを形成する端部側に2軸ともその
間隔を変えることのできるナイフエッジを有するスリッ
ト機構7を有している。このスリット機構7の開口部7
Aが対物レンズ8でフォトマスク3上にイメージ転写さ
れるようになっている。このスリット機構7の開口部7
Aを通過した後のレーザ光の強度を均一にするために、
CW−YAGレーザ10の出力側にはビームエキスパン
ダ9が配置されている。ビームエキスパンダ9は、レー
ザ光のビーム径を拡大し、強度分布変化が小さい中央部
のみがスリット機構7の開口部7Aを通過できるように
構成している。
By the way, in this photomask repairing device, in order to shape the laser beam irradiated onto the photomask 3 into a rectangular shape, a knife whose spacing can be changed on both axes is provided on the end side where the opening 7A is formed. It has a slit mechanism 7 having an edge. Opening 7 of this slit mechanism 7
The image of A is transferred onto the photomask 3 by the objective lens 8. Opening 7 of this slit mechanism 7
In order to make the intensity of the laser beam uniform after passing through A,
A beam expander 9 is arranged on the output side of the CW-YAG laser 10. The beam expander 9 is configured to expand the beam diameter of the laser beam so that only the central portion where the change in intensity distribution is small can pass through the opening 7A of the slit mechanism 7.

【0019】本実施例のフォトマスク修正装置では、ス
リット機構7の開口部7Aの幅寸法を変えることにより
、欠陥の大きさに応じた適切な幅のMo膜を形成するこ
とが可能となる。また、CW−YAGレーザ10による
高周波数のレーザパルスを用いているため、レーザ照射
部以外への熱拡散を僅少に抑制でき、エッジ精度の良い
Mo膜の形成が可能となる。
In the photomask repair apparatus of this embodiment, by changing the width dimension of the opening 7A of the slit mechanism 7, it is possible to form a Mo film with an appropriate width depending on the size of the defect. Furthermore, since a high-frequency laser pulse from the CW-YAG laser 10 is used, heat diffusion to areas other than the laser irradiated area can be slightly suppressed, making it possible to form a Mo film with good edge precision.

【0020】図1に示したフォトマスク修正装置では、
スリット機構7の図で左側にはダイクロイックミラー1
1が配設されており、レーザ光を対物レンズ8側に反射
させるようになっている。また、このダイクロイックミ
ラー11の上方側には、これを透過して観察を行うため
の接眼装置12Aと、CCDカメラ12Bとがハーフミ
ラー12Cによって分岐された光線を入射するように配
置されている。CCDカメラ12Bの読取画像は、モニ
タTV13によっても観察できるようになっている。
In the photomask repair apparatus shown in FIG.
In the diagram of the slit mechanism 7, on the left side is the dichroic mirror 1.
1 is arranged to reflect the laser beam toward the objective lens 8 side. Further, above the dichroic mirror 11, an eyepiece 12A for observing through the dichroic mirror 11 and a CCD camera 12B are arranged so that the light beam split by the half mirror 12C is incident thereon. The image read by the CCD camera 12B can also be observed on the monitor TV 13.

【0021】図2は本実施例のフォトマスク修正装置を
用いてフォトマスク上に形成したMo膜を表わしたもの
である。マスク3上には、Mo膜15が帯状に形成され
ている。この図で右側の部分はガラス面17を表わして
いる。
FIG. 2 shows a Mo film formed on a photomask using the photomask repair apparatus of this embodiment. On the mask 3, a Mo film 15 is formed in a strip shape. The right part in this figure represents the glass surface 17.

【0022】図3はこのようなMo膜の形成を行うため
の手順を示したものである。この図に示すように5μm
×10μmの矩形レーザ光16を矢印D方向に走査する
ことにより、擬似欠陥を埋めつくすようにMo膜15を
形成した。本実施例では、矩形レーザ光16の強度は、
フォトマスク3の表面上で約5mwであり、そのQスイ
ッチの繰り返し周波数は10KHzであった。また、フ
ォトマスク3の移動速度は3μm/sであった。
FIG. 3 shows a procedure for forming such a Mo film. 5 μm as shown in this figure
By scanning a rectangular laser beam 16 of x10 μm in the direction of arrow D, a Mo film 15 was formed so as to completely fill the pseudo defects. In this embodiment, the intensity of the rectangular laser beam 16 is
The power was about 5 mW on the surface of the photomask 3, and the repetition frequency of the Q switch was 10 KHz. Further, the moving speed of the photomask 3 was 3 μm/s.

【0023】図4は本発明に係わるフォトマスク修正装
置の変形例を示すものである。図1と同一部分には同一
の符号を付しており、これらの説明を定義省略する。こ
の変形例では、レーザ光の光路中のスリット機構7とダ
イクロイックミラー11との間にアッテネータ18を配
置している。アッテネータ18は、Mo膜形成開始時に
CVD反応への吸熱が少なく基板加熱が過剰となること
を防止するために、スタート時点でのレーザ光強度を絞
るために使用するものである。このアッテネータ18に
よって、レーザ光の強度を応答性良く変化させることが
できる。
FIG. 4 shows a modification of the photomask repair apparatus according to the present invention. Components that are the same as those in FIG. 1 are designated by the same reference numerals, and their descriptions will be omitted. In this modification, an attenuator 18 is disposed between the slit mechanism 7 and the dichroic mirror 11 in the optical path of the laser beam. The attenuator 18 is used to reduce the intensity of the laser beam at the start of Mo film formation in order to prevent excessive heating of the substrate due to less heat absorbed by the CVD reaction. This attenuator 18 allows the intensity of the laser beam to be changed with good responsiveness.

【0024】[0024]

【発明の効果】以上説明したように本発明に係わるフォ
トマスク修正装置によれば、例えば1KHz以上の周波
数で繰り返しレーザパルスを出力できるレーザを使用し
、フォトマスク上に照射するレーザ光を矩形状に整形す
ると共に、このレーザ光の強度分布を均一にしたので、
レーザによる加熱効果を利用するレーザCVD技術を用
いたフォトマスク修正装置でありながら、エッジの直線
性の良い金属膜堆積が可能となる。また、FIB技術を
利用した装置に比べて大きな面積を一括で修正すること
きので、はるかに高い処理能力を有しており、非常に実
用性の高い装置を提供できるという優れた効果を奏する
As explained above, according to the photomask repair device of the present invention, a laser capable of repeatedly outputting laser pulses at a frequency of 1 KHz or more is used, and the laser beam irradiated onto the photomask is shaped into a rectangular shape. As well as making the intensity distribution of this laser beam uniform,
Although this is a photomask repair device using laser CVD technology that utilizes the heating effect of a laser, it is possible to deposit a metal film with good edge straightness. Furthermore, since it is possible to correct a large area at once compared to a device using FIB technology, it has a much higher processing capacity and has the excellent effect of providing a highly practical device.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明に係わるフォトマスク修正装置の一実施
例を示す概略構成図である。
FIG. 1 is a schematic configuration diagram showing an embodiment of a photomask repair apparatus according to the present invention.

【図2】この実施例の装置でフォトマスク上に形成した
Mo膜を示す平面図である。
FIG. 2 is a plan view showing a Mo film formed on a photomask using the apparatus of this example.

【図3】この実施例の装置でMo膜の形成の手順を示し
た説明図である。
FIG. 3 is an explanatory diagram showing the procedure for forming a Mo film using the apparatus of this example.

【図4】本発明の変形例におけるフォトマスク修正装置
の概略構成図である。
FIG. 4 is a schematic configuration diagram of a photomask repair apparatus in a modified example of the present invention.

【符号の説明】[Explanation of symbols]

3  フォトマスク 7  スリット機構 7A  開口部 9  ビームエキスパンダ 10  CW−YAGレーザ 15  Mo膜 16  矩形レーザ光 18  アッテネータ 3 Photomask 7 Slit mechanism 7A Opening 9 Beam expander 10 CW-YAG laser 15 Mo film 16 Rectangular laser beam 18 Attenuator

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】  解離反応により金属の堆積を可能とす
る化合物気体を含む雰囲気に接するフォトマスク表面に
レーザ光を照射し、主に化合物気体の熱分解によりレー
ザ光照射部に選択的に形成した金属薄膜、またはレーザ
光を前記フォトマスクに対して相対的に走査してフォト
マスク上に帯状に堆積した金属薄膜により、フォトマス
ク上の白欠陥を修正するようにしたフォトマスク修正装
置において、所定の周波数以上の周波数でレーザパルス
を出力できるレーザと、前記フォトマスク上に照射する
レーザ光を矩形状に整形する整形手段と、矩形状に整形
されたレーザ光の強度分布を均一にする均一化手段とを
具備することを特徴とするフォトマスク修正装置。
[Claim 1] Laser light is irradiated onto the surface of the photomask that is in contact with an atmosphere containing a compound gas that enables metal deposition through a dissociation reaction, and a layer is selectively formed in the laser light irradiated area mainly by thermal decomposition of the compound gas. In a photomask repairing device that corrects white defects on a photomask with a metal thin film or a metal thin film deposited in a band shape on the photomask by scanning a laser beam relative to the photomask, a laser capable of outputting a laser pulse at a frequency higher than the frequency of , a shaping means for shaping the laser beam irradiated onto the photomask into a rectangular shape, and a uniformizer for uniformizing the intensity distribution of the rectangularly shaped laser beam. A photomask repair device comprising: means.
【請求項2】  前記整形手段は、周縁部にナイフエッ
ジ部を有しかつ可変可能な開口部を備えたスリット機構
を具備することを特徴とする請求項1記載のフォトマス
ク修正装置。
2. The photomask repairing apparatus according to claim 1, wherein the shaping means includes a slit mechanism having a knife edge portion at a peripheral edge and a variable opening.
【請求項3】  前記レーザ光の光路中にアッテネータ
を配置したことを特徴とする請求項1記載のフォトマス
ク修正装置
3. The photomask repair apparatus according to claim 1, further comprising an attenuator disposed in the optical path of the laser beam.
JP8291091A 1991-03-25 1991-03-25 Photomask repair equipment Expired - Lifetime JP3044811B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8291091A JP3044811B2 (en) 1991-03-25 1991-03-25 Photomask repair equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8291091A JP3044811B2 (en) 1991-03-25 1991-03-25 Photomask repair equipment

Publications (2)

Publication Number Publication Date
JPH04295851A true JPH04295851A (en) 1992-10-20
JP3044811B2 JP3044811B2 (en) 2000-05-22

Family

ID=13787410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8291091A Expired - Lifetime JP3044811B2 (en) 1991-03-25 1991-03-25 Photomask repair equipment

Country Status (1)

Country Link
JP (1) JP3044811B2 (en)

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JPH086233A (en) * 1994-06-20 1996-01-12 Nec Corp Method for correcting chipping defect of photomask and device therefor
US6090458A (en) * 1994-12-22 2000-07-18 Nec Corporation Method and apparatus for film formation by chemical vapor deposition
JP2008109753A (en) * 2006-10-24 2008-05-08 Tdk Corp Coating exfoliation method
US20090261083A1 (en) * 2005-09-16 2009-10-22 Hamamatsu Photonics K.K. Laser processing method and laser processing device
WO2012014520A1 (en) * 2010-07-30 2012-02-02 オムロン株式会社 Photomask correcting method and laser processing device
CN110545940A (en) * 2017-04-13 2019-12-06 西门子股份公司 Method for additive manufacturing of a workpiece based on a powder bed, method for establishing correction parameters for the aforementioned method and computer program product for the latter method
CN111665681A (en) * 2019-03-05 2020-09-15 Hoya株式会社 Method and apparatus for correcting photomask, method for manufacturing photomask with protective film, and method for manufacturing display device
CN116967613A (en) * 2023-09-21 2023-10-31 上海传芯半导体有限公司 Device and method for removing metal film on surface of waste mask

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086233A (en) * 1994-06-20 1996-01-12 Nec Corp Method for correcting chipping defect of photomask and device therefor
US6090458A (en) * 1994-12-22 2000-07-18 Nec Corporation Method and apparatus for film formation by chemical vapor deposition
US20090261083A1 (en) * 2005-09-16 2009-10-22 Hamamatsu Photonics K.K. Laser processing method and laser processing device
US8513567B2 (en) * 2005-09-16 2013-08-20 Hamamatsu Photonics K.K. Laser processing method for forming a modified region for cutting in an object
JP2008109753A (en) * 2006-10-24 2008-05-08 Tdk Corp Coating exfoliation method
CN103026297A (en) * 2010-07-30 2013-04-03 欧姆龙株式会社 Photomask correcting method and laser processing device
JP2012032649A (en) * 2010-07-30 2012-02-16 Omron Corp Photomask correction method and laser processing unit
WO2012014520A1 (en) * 2010-07-30 2012-02-02 オムロン株式会社 Photomask correcting method and laser processing device
CN103026297B (en) * 2010-07-30 2014-11-26 株式会社V技术 Photomask correcting method and laser processing device
CN110545940A (en) * 2017-04-13 2019-12-06 西门子股份公司 Method for additive manufacturing of a workpiece based on a powder bed, method for establishing correction parameters for the aforementioned method and computer program product for the latter method
CN110545940B (en) * 2017-04-13 2022-07-29 西门子能源全球有限公司 Method for manufacturing workpiece, method for establishing correction parameter and storage medium
CN111665681A (en) * 2019-03-05 2020-09-15 Hoya株式会社 Method and apparatus for correcting photomask, method for manufacturing photomask with protective film, and method for manufacturing display device
JP2020149046A (en) * 2019-03-05 2020-09-17 Hoya株式会社 Photomask correction method, photomask correction device, production method of photomask with pellicle and production method of display device
CN116967613A (en) * 2023-09-21 2023-10-31 上海传芯半导体有限公司 Device and method for removing metal film on surface of waste mask

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