JPS63145769A - Laser coating device - Google Patents

Laser coating device

Info

Publication number
JPS63145769A
JPS63145769A JP29178586A JP29178586A JPS63145769A JP S63145769 A JPS63145769 A JP S63145769A JP 29178586 A JP29178586 A JP 29178586A JP 29178586 A JP29178586 A JP 29178586A JP S63145769 A JPS63145769 A JP S63145769A
Authority
JP
Japan
Prior art keywords
substrate
laser
heating
laser light
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29178586A
Other languages
Japanese (ja)
Inventor
Kazuhiro Oka
岡 一宏
Osamu Hamada
治 浜田
Megumi Omine
大峯 恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP29178586A priority Critical patent/JPS63145769A/en
Publication of JPS63145769A publication Critical patent/JPS63145769A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To make control at an increased heating rate and stabilized heating temp. and to prevent contamination of a vapor deposition atmosphere and decrease in the vacuum degree thereof with a laser coating device, by projecting spectrally split laser light to a material to be deposited by evaporation and substrate for vapor deposition thereby heating said material and substrate. CONSTITUTION:Part of the laser light 2 from a CO2 laser oscillator 1 through a window 5 of a vacuum chamber 6 is spectrally split by a beam splitter 12 to the 2nd laser light 2A which is focused through a condenser lens 4 and the window 5 to the material 13 to be deposited by evaporation and is projected thereto to heat and evaporate said material. The material 13 is thus deposited by evaporation on the surface of the substrate 8. The material 13 and the substrate 8 are required to be previously heated in this case and, therefore, the 1st laser light 2B obtd. by spectrally splitting the laser light 2 by the splitter 12 is introduced through a reflecting mirror 14 and a window 15 into the vacuum vessel 1 and made into the 1st laser light 2C, 2D by changing the angle of a movable reflecting mirror 11. The beams of said light are projected to the material 13 and the substrate 8 to quickly heat the same. The beams are projected to an absorbent 16 at need to adequately control the heating temp. Generation of the contaminating gas from the heat source for heating, the contamination of the vapor deposition atmosphere and the decrease in the vacuum degree are obviated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、大出力レーザ1例えばco2レーザを用い
てセラミックス等を、a々の基板に′tIA焉するレー
ザ蒸N装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a laser evaporation device for depositing ceramics or the like onto various substrates using a high-output laser 1, such as a CO2 laser.

〔従来の技術〕[Conventional technology]

真空中に設置した被照射材にレーザ光を集光照射し、被
照射拐を蒸発させ、蒸発粒子を金属基板等の上に付着・
堆積させ、膜を形成させうるレーザ蒸溜装alζついて
はいくつかの報告例がある。
A focused laser beam is irradiated onto the irradiated material placed in a vacuum, the irradiated particles are evaporated, and the evaporated particles are attached to a metal substrate, etc.
There are several reported examples of laser distillation systems capable of depositing and forming films.

第3図は9例えば特開昭59=116373号公報に示
されたレーザ蒸着装置fζ類似した従来例を示す概念構
成図であり2図において、(1)はレーザ発振゛器で1
例えばco2レーザ発龜器、(2)はレーザ発振器(1
)より発せられた平行なレーザ光、(3)はレーザ光(
2)を任意方向へ光路転換する反射鏡、(41は反射鏡
(31により光路転換されたレーザ光を集光する集光レ
ンズ、(51は呆光レンズ(41で集光したレーザ光を
真空チャンバ(6二円に導く透過窓、(7)は透過窓(
51より導かれた来光されたレーザ光を照射される回転
する円筒状の被照射材、(8:はレーザ光の集光照射−
こよって被照射材(7)より蒸発した粒子を付着・堆積
させる基板、 (911j基版(81を所定温匣に加熱
するヒーター、αGは被照射材(7)を所定温度に加熱
するヒーターである。
FIG. 3 is a conceptual configuration diagram showing a conventional example similar to the laser evaporation apparatus fζ shown in, for example, Japanese Patent Application Laid-Open No. 59-116373. In FIG.
For example, a CO2 laser oscillator, (2) is a laser oscillator (1
) is the parallel laser beam emitted from (3), and (3) is the laser beam (
2) to a desired direction; (41 is a reflector (41 is a condensing lens that condenses the laser beam whose optical path has been diverted by 31; The chamber (transparent window leading to 62 circles, (7) is the transparent window (
A rotating cylindrical irradiated material is irradiated with the incoming laser light guided from 51, (8: is the condensed irradiation of the laser light -
Thus, the substrate to which particles evaporated from the irradiated material (7) are attached and deposited, (911j base plate (81) is a heater that heats the irradiated material (7) to a predetermined temperature, and αG is a heater that heats the irradiated material (7) to a predetermined temperature. be.

次に動作について説明する。レーザ発振器(1)より発
せらnた平行なレーザ光(2)は1反ri:l1(31
で元路転換されて集光レンズ(41を通って集光されて
Next, the operation will be explained. The n parallel laser beam (2) emitted from the laser oscillator (1) is 1 antiri:l1 (31
The light is diverted from the original path and condensed through the condensing lens (41).

透過窓(51を通って、真空チャンバ(61に導入され
It passes through the transmission window (51) and is introduced into the vacuum chamber (61).

回転する円筒状の被照射材(7)に照射される。集光レ
ンズ(41で集光されたレーザ光(2)の焦点は、被照
射材(7)上付近で結ばれる様になっており、このレー
ザ光の集光照射によって被照射材(7)の粒子が蒸発す
る。この蒸発粒子が飛び出す方向Cζ基板(81は配置
されており、この基板上1コ蒸発物が付着、堆積する。
A rotating cylindrical irradiated material (7) is irradiated. The focus of the laser beam (2) condensed by the condensing lens (41) is set near the top of the irradiated material (7), and the focused irradiation of this laser beam causes the irradiated material (7) to be focused on the irradiated material (7). The evaporated particles are evaporated in the direction Cζ where the evaporated particles fly out. A substrate (81) is arranged, and one evaporated substance adheres and accumulates on this substrate.

レーザ蒸着では基板上に緻密で密着強度のある膜を形成
させるためには 基板温度を、ある一定温度(例えば2
00℃)以上に挙げる必要乃1ある。
In laser deposition, in order to form a dense and adhesive film on a substrate, the substrate temperature must be kept at a certain temperature (for example, 2
00°C) or higher.

従来のレーザ蒸着装R(ゴ、基板の加熱、被照射材の加
熱lζは、熱輻射を利用した加熱源9例えばヒーターを
用いた方式のものであった。第3図に示すのがその一例
であり、ヒーター(9)により基板を、ヒーターαGに
より被照射材を熱輻射Iこよって加熱し、このヒーター
(9)、αGのオン・オフにより基板(81,被照射材
(7)の温度制御を行なう。
Conventional laser evaporation equipment R (heating of the substrate and heating of the irradiated material) used a heating source 9 that utilized thermal radiation, for example, a heater. An example of this is shown in Figure 3. The heater (9) heats the substrate and the heater αG heats the irradiated material using thermal radiation I, and the temperature of the substrate (81 and irradiated material (7) changes by turning on and off the heater (9) and αG. control.

〔発明が堺火しようとする問題点〕[Problems that the invention attempts to address]

上記のような従来の方式で(オ、熱輻射を利用した加熱
源であるため基板(8)、被照射材(7)の温度を上昇
させるのに時間がかかるこさ、基板(81,被照射材(
7)の温度側@がしlζくいことは、装置として不合理
であるこお、特に基板の厚みが大きい場合や、熱伝導率
の小さい基板での昇温、付着・堆積した蒸発粒子と基板
おの間の拡散を目的とする温合の高温度への昇温では不
8理註が高いといった問題点があった。また、加熱源に
ヒーターを用いた場合ヒーター自体及び治具からのガス
の発生により、蒸着の雰囲気の汚染及び真空度の低下が
おこり、膜質が低下するさいった問題点もあった。
With the conventional method as described above (E), since the heating source uses thermal radiation, it takes time to raise the temperature of the substrate (8) and the irradiated material (7). Material (
The fact that the temperature side of 7) is too low is unreasonable for the device, especially when the substrate is thick or has a low thermal conductivity, and the temperature increases due to attached/deposited evaporated particles and the substrate. There is a problem in that raising the temperature to a high temperature for the purpose of diffusion during the heating process is highly unreasonable. Furthermore, when a heater is used as a heat source, gas is generated from the heater itself and the jig, contaminating the deposition atmosphere and reducing the degree of vacuum, resulting in a reduction in film quality.

この発明は、上記のような問題点を解消するためfζな
されたもので、基板(81,被照射材(7)の温度を短
時間で、場合によっては高温度に上昇させることができ
、基板(7)、被照射材(引の温度を、安定に1blJ
御でき、加熱源及び治具からのカス発生をなくして、蒸
着の雰囲気の汚染、X空度のは下をなくすこdができる
装置を目的とする。
This invention was developed in order to solve the above-mentioned problems, and it is possible to raise the temperature of the substrate (81, irradiated material (7) to a high temperature in a short time, in some cases to a high temperature). (7) The temperature of the irradiated material (pulling temperature) should be kept at 1 blJ
The object of the present invention is to provide an apparatus that can be controlled, eliminate the generation of scum from heating sources and jigs, and eliminate contamination of the vapor deposition atmosphere and the reduction of air space.

〔問題点を解決するための手段〕[Means for solving problems]

この発明のレーザコーティング装置は、レーザ発振器、
このレーザ発振器より発振されたレーザ光を第1レーザ
元と第2レーザ光に分けるビームスプリッタ、被照射材
とこの被照射材の蒸発粒子が付着・堆積下る基板が収容
される真空チャンバ。
The laser coating device of this invention includes a laser oscillator,
A beam splitter that divides the laser beam oscillated by the laser oscillator into a first laser source and a second laser beam, and a vacuum chamber that accommodates a material to be irradiated and a substrate on which evaporated particles of the material to be irradiated are attached and deposited.

第1レーザ光を照射して上記被照射材♂基板を加熱する
加熱手段、及び第2レーザ元を照射して上記被照射材か
ら粒子を蒸発させ上記基板lこ付着・堆積させる蒸宥手
設を備えたものである。
a heating means for heating the irradiated material (♂) substrate by irradiating with a first laser beam; and an evaporation device for irradiating with a second laser beam to evaporate particles from the irradiated material to adhere and deposit them on the substrate. It is equipped with the following.

〔作用〕[Effect]

この発明においては被照射材と基板をレーザ光で加熱す
るので、基板と被照射材を短時間に加熱でき、かつ広い
温度範囲での温度制御が容易となり、蒸帰雰吐気の汚染
、真空度の低下をなくすこ♂ができる。
In this invention, since the irradiated material and the substrate are heated with laser light, the substrate and the irradiated material can be heated in a short time, and the temperature can be easily controlled over a wide temperature range. It is possible to eliminate the decline in

〔笑施例〕[lol example]

以下、この発明の一宴施例を図について説明する。第1
図の概略構成図において、(1)はレーザ発振器、(2
1はレーザ発振器(1)より発せられたレーザ光、02
はビームスプリッタ−でレーザ光(2)をある比率で反
射光の第2レーザ光(2A〕 と透過光の第1レーザ光
(2B)に分光する。t4+ +2ビームスプリツタ1
3で光路転換された第2レーザ光(2A)を集光する集
光レンズ、(51は集光レンズ(4)で集光したレーザ
光を真空チャンバ(61内に導く透過窓、0は透過窓(
51より導かれた集光された第2レーザ光を照射される
被照射材、(8)は第2レーザ光の集光照射によって被
照射材u:Iより蒸発した粒子を付着・堆積させる基板
である。また、αをはビームスプリッタ13により分光
された第1レーザ元(透過レーザ光)(2B)を光路転
換する反射鏡、α旧ば反射鏡α4で光路転換された第1
レーザ光を真空チャンバ(6:内に導く透過窓αυは透
過窓上3より導かnた第1レーザ光を任意の方向へ光路
転換する可動式反射鏡。
Hereinafter, an embodiment of this invention will be explained with reference to the drawings. 1st
In the schematic configuration diagram shown in the figure, (1) is a laser oscillator, (2
1 is a laser beam emitted from a laser oscillator (1), 02
is a beam splitter that splits the laser beam (2) into a reflected second laser beam (2A) and a transmitted first laser beam (2B) at a certain ratio.t4+ +2 beam splitter 1
3 is a condenser lens that condenses the second laser beam (2A) whose optical path has been changed; (51 is a transmission window that guides the laser beam condensed by the condenser lens (4) into the vacuum chamber (61; 0 is a transmission window); window(
(8) is a substrate to which particles evaporated from the irradiated material u:I are attached and deposited by the focused irradiation of the second laser beam; It is. α is a reflector that changes the optical path of the first laser source (transmitted laser beam) (2B) separated by the beam splitter 13;
The transmission window αυ that guides the laser light into the vacuum chamber (6) is a movable reflecting mirror that changes the optical path of the first laser light guided from the upper part of the transmission window 3 to an arbitrary direction.

(20) 、(2DJ 、 (2K)はそれぞれ可動式
反射鏡an+cヨり光路転換された第1レーザ元の光路
で、 (20)は被照射材Q3を1 (2D)は基板(
8)を照射加熱する場合であり、(2K月;レーザ吸収
材σeに第1レーザ光を照射吸収させる場合の光路であ
る。
(20), (2DJ, and (2K) are the optical paths of the first laser source whose optical paths have been changed by the movable reflector an+c, respectively, (20) is the optical path of the irradiated material Q3, and (2D) is the substrate (
8) is irradiated and heated (2K months; this is the optical path when the first laser beam is irradiated and absorbed by the laser absorbing material σe).

上記のように構成さ扛たレーザ蒸N装置においては、ビ
ームスプリツメ−α2で任意の比率に分けられた第1.
第2レーザ光(2B)、(2A)のうち、第2レーザ光
(2A)は、第3図の従来の方法と同様の経路で、被照
射材α1ζ照射され、蒸発した被照射材03の粒子は、
基板(81に付着・堆積する。
In the laser evaporation apparatus constructed as described above, the first beam is divided into arbitrary ratios by the beam splitter α2.
Of the second laser beams (2B) and (2A), the second laser beam (2A) irradiates the irradiated material α1ζ along the same path as the conventional method shown in FIG. 3, and the evaporated irradiated material 03 is The particles are
Adheres and deposits on the substrate (81).

一方、第1レーザ光(2B)は反射鏡04で光路転換さ
れて、可動式反射鏡aυに至るが、この可動式反射f#
、(LDの角度を変えることにより、第1レーザ光(2
B)は任意の方向9例えば(2C)、(2D) lζ光
路転換されて、被照射材αり及び基板(81に断続的或
いは連続的に照射さn、被照射材及び基板を加熱する。
On the other hand, the first laser beam (2B) is diverted by the reflecting mirror 04 and reaches the movable reflecting mirror aυ, but this movable reflecting mirror f#
, (by changing the angle of the LD, the first laser beam (2
B) is changed in the optical path in an arbitrary direction 9, for example (2C), (2D), and the irradiated material and the substrate (81) are intermittently or continuously irradiated, heating the irradiated material and the substrate.

また、被照射材α3及び基板(8)の加熱が不要な間は
、可動式反射鏡Uでレーザ光(2B)を(2K)の光路
に光路転換し、吸収材ClF31コ照射、吸収させてお
く。
In addition, while heating of the irradiated material α3 and the substrate (8) is not required, the laser beam (2B) is changed to the optical path of (2K) by the movable reflector U, and the absorbing material ClF31 is irradiated and absorbed. put.

また、蒸着においては、被照射材α3Iζ第1レーザ光
(2人)を集光照射させる前に、基板(8)及び被照射
材a3を加熱する必要がある。このためビームス1リツ
ター(12は可動式で、基板(8)及び被照射材03の
加熱のみを行なう場合は、ビームスプリッタ−α2をレ
ーザ光(2)の光路からはずして第2レーザ光(2A)
を生じさせない様にできる。
In addition, in vapor deposition, it is necessary to heat the substrate (8) and the irradiated material a3 before the irradiated material α3Iζ first laser light (two persons) is focused and irradiated. Therefore, when heating only the substrate (8) and the irradiated material 03, the beam splitter α2 is removed from the optical path of the laser beam (2) and the second laser beam (2A )
It is possible to prevent this from occurring.

以上のように、この装置においては、可動式反射鏡00
の角度を適時任意に変えることができること、及びビー
ムスプリッタ−u3の透過率を換えることによって基板
(81,被照射材0への単位面積。
As described above, in this device, the movable reflecting mirror 00
By changing the angle of the substrate (81, irradiated material 0) at any time and by changing the transmittance of the beam splitter u3.

単位時間当りの第1レーザ光による入熱量を任意fζ設
定できるので、昇温の速度、及び保持する温度域を必要
とする値に設定できる。また、レーザによる直接照射を
加熱源にしていることCハ、特に基板(81の保持温度
を高温に設定する場合1時間についても、熱効率tこつ
いても合理的である。さらに、基板(81及び被照射材
u3の加熱lζついては、可動式反射鏡α0を高速で動
かすことにより、同時に均一な加熱ができる。
Since the amount of heat input by the first laser beam per unit time can be set arbitrarily fζ, the rate of temperature increase and the temperature range to be maintained can be set to required values. In addition, using direct laser irradiation as the heating source is reasonable, especially if the holding temperature of the substrate (81) is set to a high temperature for one hour, even if the thermal efficiency is low. Regarding the heating lζ of the irradiated material u3, uniform heating can be achieved at the same time by moving the movable reflecting mirror α0 at high speed.

また、基板(8)及び被照射材α3の加熱を一時停止し
たい場合lζは、可動式反射鏡α9の角度を変えて第2
レーザ光(2B〕 をレーザ吸収材uGの方向(2E)
Cζ光路転換すればよいので、レーザ蒸漸中であっても
、蒸着を停止させることもな(、またレーザ発振器(1
)の見損を停止させることもなく、瞬時に加熱照射を停
止できる装置構成になって3つ、温度制御□□が従来の
*Wよりもしやすくなっている。
In addition, when it is desired to temporarily stop the heating of the substrate (8) and the irradiated material α3, the second
Direction of laser beam (2B) to laser absorber uG (2E)
Since it is only necessary to change the Cζ optical path, there is no need to stop the evaporation even if the laser evaporation is in progress (and the laser oscillator (1)
) The device has a configuration that can instantly stop heating irradiation without having to stop the heating irradiation, making temperature control easier than with the conventional *W.

一連の工程を連続して行える。A series of steps can be performed continuously.

さらに、ヒーターが加熱源の場合9問題となる脱カスも
、レーザ加熱の場合lこは発生しないのでこの装置1コ
おいては、一定の真空度で、汚染カスのない雰囲気で安
定で面品質な成膜か再現性良く行なえる。
Furthermore, the removal of scraps, which is a problem when a heater is used as a heating source, does not occur when laser heating is used, so this single device can provide stable surface quality in a constant vacuum and in an atmosphere free of contaminated debris. Film formation can be performed with good reproducibility.

なお、上記実施例では、基板(7)lこ照射されるレー
ザ光(2D〕 は平行なビーム元であるが、その光路f
こ集光レンズを配置すれば、基板(8)の局部加熱が可
能となる。その−・実施例を第2図の概略構成図に示す
。レーザ光(2D)のf、路において、基板(81上付
近で焦点を結ぶ位置に集光レンズσDを配置することに
より基板(81上のめる点を局部加熱できる。
In the above embodiment, the laser beam (2D) irradiated onto the substrate (7) is a parallel beam source, but its optical path f
By arranging this condensing lens, local heating of the substrate (8) becomes possible. An example thereof is shown in the schematic diagram of FIG. 2. By arranging a condenser lens σD at a position where the laser beam (2D) focuses near the top of the substrate (81), the point on the substrate (81) can be locally heated.

才た。集光レンズα71を可動式Eこすnは任意の点の
局部加熱が連続的1こ行なえる。
Talented. The movable condenser lens α71 allows continuous local heating of any point.

〔発明の効果〕〔Effect of the invention〕

以上のよう1ζ、この発明によれば、レーザ発振器、こ
のレーザ発振器より発振さnたレーザ光を第1レーザ光
さ第2レーザ光に分けるビームスプリッタ、被照射材と
この被照射材の蒸発粒子が付着・堆積する基板が収容さ
れる真空チャンバ、第1レーザ光を照射して上記被照射
材と基板を加熱する加熱手段、及び第2レーザ光を照射
して上記被照射材から粒子を蒸発させ、上記基板に付着
・堆積させる蒸着手段を備えたものにすることにより、
基板及び被照射材の急速加熱、低温から高温までの広い
温度域での温度制御が容易で、真空度の低下及び蒸着雰
囲気の汚染がなく、再現性良く高品質なコーテイング品
が安定して製造できるレーザコーティング装置が得られ
る効果がある。
As described above, according to the present invention, there is provided a laser oscillator, a beam splitter that divides the laser beam emitted from the laser oscillator into a first laser beam and a second laser beam, a material to be irradiated, and evaporated particles of the material to be irradiated. a vacuum chamber containing a substrate to which particles are attached and deposited; a heating means for heating the irradiated material and the substrate by irradiating a first laser beam; and evaporating particles from the irradiated material by irradiating a second laser beam. By making it equipped with a vapor deposition means for attaching and depositing it on the substrate,
Rapid heating of substrates and irradiated materials, easy temperature control over a wide temperature range from low to high temperatures, no reduction in vacuum degree and no contamination of the evaporation atmosphere, and stable production of high-quality coated products with good reproducibility. This has the effect of providing a laser coating device that can be used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例のレーザコーティング装置
の概略構成図、第2肉はこの発明の他の実施例のレーザ
コーティングiltの概略構成図。 第3図は従来のレーザコーティング装置の概略構成図で
ある。 図において、(1)はレーザ発揚器、(2)はレーザ光
。 (2A)は第2レーザ光、  (2B)は第2レーザ光
、(6:は真空チャンバ、(7)は被照射材、(8)は
基板、a■はビームスプリッタ、住Jは被照射材である
、なお1図中、同一符号は同−又は相当部分を示す。
FIG. 1 is a schematic diagram of a laser coating apparatus according to an embodiment of the present invention, and the second figure is a schematic diagram of a laser coating ILT according to another embodiment of the invention. FIG. 3 is a schematic diagram of a conventional laser coating apparatus. In the figure, (1) is a laser pump, and (2) is a laser beam. (2A) is the second laser beam, (2B) is the second laser beam, (6: is the vacuum chamber, (7) is the irradiated material, (8) is the substrate, a is the beam splitter, and J is the irradiated object. The same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims]  レーザ発振器、このレーザ発振器より発振されたレー
ザ光を第1レーザ光と第2レーザ光に分けるビームスプ
リッタ、被照射材とこの被照射材の蒸発粒子が付着堆積
する基板が収容される真空チャンバ、第1レーザ光を照
射して上記被照射材と基板を加熱する加熱手段、及び第
2レーザ光を照射して上記被照射材から粒子を蒸発させ
上記基板に付着堆積させる蒸着手段を備えたレーザコー
ティング装置。
a laser oscillator, a beam splitter that divides the laser beam oscillated by the laser oscillator into a first laser beam and a second laser beam, a vacuum chamber that accommodates an irradiated material and a substrate on which evaporated particles of the irradiated material are attached and deposited; A laser comprising a heating means for heating the irradiated material and the substrate by irradiating a first laser beam, and a vapor deposition means for irradiating a second laser beam to evaporate particles from the irradiated material and deposit them on the substrate. Coating equipment.
JP29178586A 1986-12-08 1986-12-08 Laser coating device Pending JPS63145769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29178586A JPS63145769A (en) 1986-12-08 1986-12-08 Laser coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29178586A JPS63145769A (en) 1986-12-08 1986-12-08 Laser coating device

Publications (1)

Publication Number Publication Date
JPS63145769A true JPS63145769A (en) 1988-06-17

Family

ID=17773394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29178586A Pending JPS63145769A (en) 1986-12-08 1986-12-08 Laser coating device

Country Status (1)

Country Link
JP (1) JPS63145769A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05504603A (en) * 1990-07-03 1993-07-15 フラウンホツフアー―ゲゼルシヤフト ツル フエルデルング デル アンゲヴアンドテン フオルシユウング エー.フアウ. Laser impulse-gas phase separation (LPVD) method for separating thin films
JP2013122065A (en) * 2011-12-09 2013-06-20 Sumitomo Electric Ind Ltd Method and apparatus for depositing functional thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05504603A (en) * 1990-07-03 1993-07-15 フラウンホツフアー―ゲゼルシヤフト ツル フエルデルング デル アンゲヴアンドテン フオルシユウング エー.フアウ. Laser impulse-gas phase separation (LPVD) method for separating thin films
JP2013122065A (en) * 2011-12-09 2013-06-20 Sumitomo Electric Ind Ltd Method and apparatus for depositing functional thin film

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