JPH0368762A - Vapor-deposition device by laser - Google Patents
Vapor-deposition device by laserInfo
- Publication number
- JPH0368762A JPH0368762A JP20206689A JP20206689A JPH0368762A JP H0368762 A JPH0368762 A JP H0368762A JP 20206689 A JP20206689 A JP 20206689A JP 20206689 A JP20206689 A JP 20206689A JP H0368762 A JPH0368762 A JP H0368762A
- Authority
- JP
- Japan
- Prior art keywords
- irradiated
- sample
- laser
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
この発明はレーザ光を用いてセラくツク等を基板上に蒸
着するレーザ蒸着装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a laser vapor deposition apparatus that uses laser light to vapor deposit ceramics or the like onto a substrate.
第５図は、例えば特開昭５９−１１６３７３号公報に記
載された従来のレーザ蒸着装置を示す概略ｍ成因である
。図において、ｌはレーザ発振器（図示せず）から出射
されたレーザ光、２はこのレーザ光１の光路を変更する
ための平面鏡、３は該レーザ光１を集光するための集光
レンズ、５は真空チャンバー、４はレーザ光１を該真空
チャンバー５内に導入するための透過窓、６は上記真空
チャンバー５内で導入光の光路を変更するための平面鏡
、７はリング状に形成された被照射試料、８は薄膜を形
成するための基板、９は蒸着時間を調整するためのシャ
ッタ、１０は被照射試料７を加熱するための予熱し−タ
である。FIG. 5 is a schematic diagram showing a conventional laser evaporation apparatus described in, for example, Japanese Unexamined Patent Publication No. 59-116373. In the figure, l is a laser beam emitted from a laser oscillator (not shown), 2 is a plane mirror for changing the optical path of this laser beam 1, 3 is a condensing lens for condensing the laser beam 1, 5 is a vacuum chamber, 4 is a transmission window for introducing the laser beam 1 into the vacuum chamber 5, 6 is a plane mirror for changing the optical path of the introduced light within the vacuum chamber 5, and 7 is formed in a ring shape. 8 is a substrate for forming a thin film, 9 is a shutter for adjusting vapor deposition time, and 10 is a preheater for heating the irradiated sample 7.
次に動作について説明する。Next, the operation will be explained.
レーザ発振器から出射されたレーザ光１は平面鏡２によ
り光路を変更され、集光レンズ３を通過した後、透過窓
４を通して真空チャンバー５内に導入される。そしてこ
の導入光は平面鏡６により再び光路変更された後に、リ
ング状に形成された被照射試料７表面に集光照射される
。なお、ここで上記集光レンズ３は被照射試料７表面で
レーザ光の焦点が結ばれるように配置されている。A laser beam 1 emitted from a laser oscillator has its optical path changed by a plane mirror 2, passes through a condensing lens 3, and is then introduced into a vacuum chamber 5 through a transmission window 4. After the optical path of this introduced light is changed again by the plane mirror 6, it is focused and irradiated onto the surface of the irradiated sample 7 formed in a ring shape. Note that the condenser lens 3 is arranged so that the laser beam is focused on the surface of the sample 7 to be irradiated.
また、被照射試料７は、リング中心軸の回りを任意速度
で回転し、さらにリング中心軸方向に被照射試料７の長
さだけ揺動運動が可能であり、このため被照射試料７全
体を均一加熱でき、−様に蒸着物質を蒸発させることが
できる。In addition, the irradiated sample 7 can rotate around the ring center axis at an arbitrary speed and can also oscillate by the length of the irradiated sample 7 in the direction of the ring center axis. Uniform heating is possible, and the deposited material can be evaporated in a similar manner.
レーザ光１の照射により被照射試料７から蒸発粒子が放
出され、被照射試料７に対向して配置された基板８上に
堆積する。この時該基板８の前面に設けた可動シャッタ
９により、蒸着時間を任意に調整している。また被照射
試料７が熱割れを生じやすい材質のものである場合は、
予熱ヒータ１０により被照射試料７の外周を予熱して被
照射試料７の破損を防止する。Evaporated particles are emitted from the irradiated sample 7 by irradiation with the laser beam 1 and deposited on a substrate 8 placed opposite the irradiated sample 7 . At this time, a movable shutter 9 provided on the front surface of the substrate 8 is used to arbitrarily adjust the deposition time. In addition, if the irradiated sample 7 is made of a material that is prone to thermal cracking,
The preheater 10 preheats the outer periphery of the irradiated sample 7 to prevent the irradiated sample 7 from being damaged.
従来のレーザ蒸着装置は以上のように構成されているの
で、被照射試料上の蒸発源は点状蒸発源となり、このた
め基板上での膜厚分布のばらつきが大きく、有効面積（
均一膜厚部分の面積）を大きくとれないという問題点が
あった。Since the conventional laser evaporation apparatus is configured as described above, the evaporation source on the irradiated sample becomes a point evaporation source, which causes large variations in the film thickness distribution on the substrate, and the effective area (
There was a problem in that it was not possible to increase the area of the uniform film thickness portion.
この発明は上記のような問題点を解消するためになされ
たもので、膜厚分布を均一化し、成膜有効面積を大きく
することのできるレーザ蒸着装置を得ることを目的とす
る。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a laser evaporation apparatus that can uniformize the film thickness distribution and increase the effective area for film formation.
この発明に係るレーザ蒸着装置は、レーザ発振器からの
レーザ光を真空チャンバー内の被照射試料上に集光照射
する光学系を、上記レーザ光をこれが被照射試料上で線
状ビームとなるようを集光する線状集光手段を有する構
成としたものである。The laser vapor deposition apparatus according to the present invention includes an optical system that condenses and irradiates laser light from a laser oscillator onto a sample to be irradiated in a vacuum chamber, and controls the laser light so that it becomes a linear beam on the sample to be irradiated. The structure has a linear condensing means for condensing light.
この発明においては、被照射試料上に線状に集光された
レーザ光を照射するようにしたから、被照射試料の蒸発
源の領域が線状となって、該領域からの蒸発物質が基板
表面に均一に堆積することとなり、このため基板上での
膜厚分布を均一化することができる。In this invention, since the sample to be irradiated is irradiated with a linearly focused laser beam, the region of the evaporation source of the sample to be irradiated is linear, and the evaporated material from this region is transferred to the substrate. The film is deposited uniformly on the surface, so that the film thickness distribution on the substrate can be made uniform.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によるレーザ蒸着装置の概略
構成を示し、図において１はレーザ発振器（図示せず）
から出射されたレーザ光、１００は該レーザ光１をその
一軸方向にのみ集光できるシリンドリカルレンズ、５は
真空チャンバー、４は上記レーザ光１を該真空チャンバ
ー５内に導入するための透過窓で、その構成材料には例
えばセレン化亜鉛（ＺｎＳｅ）あるいは塩化カリウム（
Ｋ（１）を用いており、また７は被照射試料で、例えば
酸化シリコン（ＳｉＯりあるいはアルくす（Ａｊ！ｚ
Ｏｓ ）からなる。８はその表面に薄膜を形成する基板
である。FIG. 1 shows a schematic configuration of a laser evaporation apparatus according to an embodiment of the present invention, and in the figure, 1 is a laser oscillator (not shown).
100 is a cylindrical lens that can focus the laser beam 1 only in one axis direction, 5 is a vacuum chamber, and 4 is a transmission window for introducing the laser beam 1 into the vacuum chamber 5. Its constituent materials include, for example, zinc selenide (ZnSe) or potassium chloride (
K(1) is used, and 7 is the sample to be irradiated, for example, silicon oxide (SiO) or alkali (Aj!z
Os). 8 is a substrate on which a thin film is formed.
また第２図は上記レーザ蒸着装置の主要部を示す拡大斜
視図であり、１０１は被照射試料７上に照射される線状
ビームである。FIG. 2 is an enlarged perspective view showing the main parts of the laser evaporation apparatus, and 101 is a linear beam irradiated onto the sample 7 to be irradiated.
次に動作について説明する。Next, the operation will be explained.
レーザ発振器（図示せず）から伝送されたレーザ光１、
例えばＣＯ，レーザ（波長１０．６μｍ）はシリンドリ
カルレンズ１００により一軸方向にのみ集光され、透過
窓４を通して真空チャンバー５内に配置された被照射試
料７に集光照射される。a laser beam 1 transmitted from a laser oscillator (not shown);
For example, a CO laser (wavelength: 10.6 μm) is focused only in one axis direction by a cylindrical lens 100, and is irradiated through a transmission window 4 onto an irradiated sample 7 placed in a vacuum chamber 5.
ここでは、照射光をシリンドリカルレンズ１００を用い
て集光照射しているため、該被照射試料７上では該照射
光は線状ビーム１０１となっている。Here, since the irradiation light is focused and irradiated using the cylindrical lens 100, the irradiation light becomes a linear beam 101 on the irradiated sample 7.
なお、シリンドリカルレンズ１００と被照射試料７との
距離は被照射試料７上でレーザ光１が集光されるように
前もって調整されている。また被照射試料７上では線状
ビーム１０１が照射されているために、蒸発粒子は線状
ビーム１０１に沿って発生し、照射部の法線方向に放出
され、被照射試料７に対向して配置された基板８上に堆
積し、薄膜を形成する。Note that the distance between the cylindrical lens 100 and the sample 7 to be irradiated is adjusted in advance so that the laser beam 1 is focused on the sample 7 to be irradiated. In addition, since the linear beam 101 is irradiated onto the irradiated sample 7, the evaporated particles are generated along the linear beam 101, emitted in the normal direction of the irradiated part, and are directed toward the irradiated sample 7. It is deposited on the placed substrate 8 to form a thin film.
第３図は該基板８上における膜厚分布を示したものであ
り、図中グラフａは従来装置の膜厚分布を、グラフｂは
本発明における、シリンドリカルレンズ１００を用いて
線状ビーム１０１を集光照射した場合の膜厚分布を示し
ている。この図より基板上における膜厚分布が大幅に改
善されていることがわかる。また、被照射試料７と基板
８との距離が短い場合にはその効果は大である。FIG. 3 shows the film thickness distribution on the substrate 8, in which graph a shows the film thickness distribution of the conventional device, and graph b shows the film thickness distribution of the linear beam 101 using the cylindrical lens 100 in the present invention. It shows the film thickness distribution when irradiated with focused light. This figure shows that the film thickness distribution on the substrate has been significantly improved. Moreover, the effect is great when the distance between the irradiated sample 7 and the substrate 8 is short.
このように本実施例では、レーザ光をシリンドリカルレ
ンズを用い集光して、被照射試料上に線状ビームを集光
照射するよう構成したので、真空蒸着により薄膜形成さ
れる基板上での膜厚分布を均一化することができる、こ
れにより蒸着装置の性能を向上することができる。In this way, in this example, the laser beam is focused using a cylindrical lens, and the linear beam is focused and irradiated onto the sample to be irradiated. The thickness distribution can be made uniform, thereby improving the performance of the vapor deposition apparatus.
なお、上記実施例ではシリンドリカルレンズ１００を用
いて照射光を被照射試料７上で線状ビーム１０１とする
構成について示したが、線状ビーム１０１を発生させる
構成はこれに限るものではない。In the above embodiment, a configuration is shown in which the irradiation light is generated as a linear beam 101 on the irradiated sample 7 using the cylindrical lens 100, but the configuration in which the linear beam 101 is generated is not limited to this.
例えば第４図に示すように平面鏡１０２を駆動させて、
被照射試料７上で集光点を高速でスキャンするようにし
てもよい。For example, as shown in FIG. 4, by driving the plane mirror 102,
The focal point may be scanned at high speed on the irradiated sample 7.
また、上記実施例では、レーザ光としてＣ○２レーザを
用いた蒸着装置を示したが、これはエキシマレーザ、Ｙ
ＡＧレーザ、色素レーザ、ガラスレーザ等を用いた蒸着
装置であってもよく、このような場合も上記実施例と同
様の効果を奏する。Further, in the above embodiment, a vapor deposition apparatus using a C○2 laser as the laser beam was shown, but this is an excimer laser, a Y
A vapor deposition apparatus using an AG laser, a dye laser, a glass laser, etc. may also be used, and in such a case, the same effects as in the above embodiment can be achieved.
以上のように、この発明に係るレーザ蒸着装置によれば
、レーザ発振器からのレーザ光を真空チャンバー内の被
照射試料上に集光照射する光学系を、上記レーザ光をこ
れが被照射試料上で線状ビームとなるよう集光する線状
集光手段を有する構成としたので、被照射試料の蒸発源
の領域が線状となって、該領域からの蒸発物質が基板表
面に均一に堆積することとなり、これにより基板上での
膜厚分布の均一化が可能となり、この結実装置の性能を
向上できる効果がある。As described above, according to the laser evaporation apparatus according to the present invention, the optical system for condensing and irradiating the laser beam from the laser oscillator onto the irradiated sample in the vacuum chamber is configured such that the laser beam is irradiated onto the irradiated sample. Since the configuration has a linear condensing means that condenses light into a linear beam, the evaporation source region of the irradiated sample becomes linear, and the evaporated material from the region is uniformly deposited on the substrate surface. This makes it possible to make the film thickness distribution uniform on the substrate, which has the effect of improving the performance of this fruiting device.
第１図はこの発明の一実施例によるレーザ蒸着装置の構
成図、第２図はこの発明に係る主要部の斜視図、第３図
は基板上における膜厚分布の均一性を本発明に係る装置
と従来装置とで比較して示す図、第４図はこの発明の他
の実施例によるレーザ蒸着装置の構成図、第５図は従来
のレーザ蒸着装置を示す構成図である。
１はレーザ光、４は透過窓、５は真空チャンバ、７は被
照射試料、８は基板、１００はシリンドリカルレンズで
ある。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a configuration diagram of a laser evaporation apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of the main parts according to the present invention, and FIG. 3 is a diagram showing the uniformity of film thickness distribution on a substrate according to the present invention. FIG. 4 is a diagram showing a configuration of a laser evaporation device according to another embodiment of the present invention, and FIG. 5 is a diagram illustrating a conventional laser evaporation device. 1 is a laser beam, 4 is a transmission window, 5 is a vacuum chamber, 7 is a sample to be irradiated, 8 is a substrate, and 100 is a cylindrical lens. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
ーザ光を外部より該チャンバー内に導入し、該被照射試
料に集光照射するための光学系とを有し、基板をチャン
バー内の被照射試料と対向する位置に配置し、上記レー
ザ光の集光照射により被照射試料から蒸着材料を蒸発さ
せてこれを該基板表面に堆積するレーザ蒸着装置におい
て、 上記光学系は、上記レーザ光をこれが被照射試料上で線
状ビームとなるよう集光させる線状集光手段を有するも
のであることを特徴とするレーザ蒸着装置。(1) It has a sample to be irradiated placed in a vacuum chamber and an optical system for introducing laser light into the chamber from the outside and focusing the laser beam on the sample to be irradiated, and the substrate is placed inside the chamber. In a laser evaporation apparatus that is disposed at a position facing a sample to be irradiated and evaporates vapor deposition material from the sample to be irradiated by condensed irradiation of the laser beam and deposits it on the surface of the substrate, the optical system is arranged to face the sample to be irradiated. A laser evaporation apparatus characterized in that it has a linear condensing means for condensing the light onto a sample to be irradiated to form a linear beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20206689A JPH0368762A (en) | 1989-08-03 | 1989-08-03 | Vapor-deposition device by laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20206689A JPH0368762A (en) | 1989-08-03 | 1989-08-03 | Vapor-deposition device by laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0368762A true JPH0368762A (en) | 1991-03-25 |
Family
ID=16451383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20206689A Pending JPH0368762A (en) | 1989-08-03 | 1989-08-03 | Vapor-deposition device by laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0368762A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622567A (en) * | 1992-11-30 | 1997-04-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus using laser |
-
1989
- 1989-08-03 JP JP20206689A patent/JPH0368762A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622567A (en) * | 1992-11-30 | 1997-04-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus using laser |
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