JP2906485B2 - Thin film production equipment - Google Patents

Thin film production equipment

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Publication number
JP2906485B2
JP2906485B2 JP28037189A JP28037189A JP2906485B2 JP 2906485 B2 JP2906485 B2 JP 2906485B2 JP 28037189 A JP28037189 A JP 28037189A JP 28037189 A JP28037189 A JP 28037189A JP 2906485 B2 JP2906485 B2 JP 2906485B2
Authority
JP
Japan
Prior art keywords
target
laser beam
substrate
semi
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28037189A
Other languages
Japanese (ja)
Other versions
JPH03146658A (en
Inventor
淳 家氏
多見男 ▲吉▼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimazu Seisakusho KK
Original Assignee
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimazu Seisakusho KK filed Critical Shimazu Seisakusho KK
Priority to JP28037189A priority Critical patent/JP2906485B2/en
Publication of JPH03146658A publication Critical patent/JPH03146658A/en
Application granted granted Critical
Publication of JP2906485B2 publication Critical patent/JP2906485B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 超電導薄膜の作成に、超電導物質のターゲットにレー
ザビームを照射して超電導物質を蒸発させ、基板上に蒸
着する方法が用いられている。本発明はこのような薄膜
の作成装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) In order to form a superconducting thin film, a method of irradiating a target of a superconducting material with a laser beam to evaporate the superconducting material and deposit it on a substrate is used. The present invention relates to an apparatus for producing such a thin film.

(従来の技術) 上述したような超電導薄膜作成方法で、基板をもレー
ザビームで照射することにより、基板のクリーニング、
蒸着膜のマイグレーションの促進を行うと好成績が得ら
れることが知られ、基板をレーザビームで照射するよう
にした装置の提案も行われている。そのような提案装置
の一例は第6図に示すようにレーザビームFをビームス
プリッタSで2光束に分け、その2光束の一方をターゲ
ットTに照射し、他方を基板Bに照射するようにしたも
のである。
(Prior Art) By irradiating a substrate with a laser beam by the above-described method of forming a superconducting thin film, the substrate can be cleaned,
It is known that a good result can be obtained by promoting the migration of a deposited film, and an apparatus for irradiating a substrate with a laser beam has been proposed. An example of such a proposed device is such that a laser beam F is divided into two light beams by a beam splitter S as shown in FIG. 6, and one of the two light beams is irradiated on a target T and the other is irradiated on a substrate B. Things.

(発明が解決しようとする課題) 第6図に示した従来装置では、ターゲット照射用と基
板照射用のレーザをビームスプリッタで分光するため、
チャンバー外部に大がかりな光学系を組む必要があり、
また幾つもの鏡を使うため鏡による損失や大気による光
の吸収が大きく、レーザの利用効率が低くなりレーザ照
射の効果が充分に得られない。この為大出力のレーザが
必要となる。
(Problems to be Solved by the Invention) In the conventional apparatus shown in FIG. 6, a laser for target irradiation and a laser for substrate irradiation are separated by a beam splitter.
It is necessary to build a large optical system outside the chamber,
In addition, since a number of mirrors are used, the loss due to the mirrors and the absorption of light by the atmosphere are large, the utilization efficiency of the laser is reduced, and the effect of laser irradiation cannot be sufficiently obtained. Therefore, a laser with a large output is required.

本発明は一つのレーザを用い、従来ターゲットからの
揮散物を遮蔽するのに用いていたシャッターの位置,形
状を工夫すると共に、シャッターに部分的に光の透過特
性の異なる機能を持たせる事で、光の利用効率が良い薄
膜蒸着装置を提供しようとするものである。
The present invention uses a single laser to devise the position and shape of the shutter, which has been used to shield the volatile matter from the target, and to give the shutter a function with partially different light transmission characteristics. It is an object of the present invention to provide a thin film deposition apparatus having good light use efficiency.

(課題を解決するための手段) 蒸着室内でターゲットとレーザとの間の光路中に出入
自在に半透過性の光反射板を設け、この板を上記光路中
に進出させたとき反射されたレーザビームが基板に入射
するようにした。
(Means for Solving the Problems) A semi-transmissive light reflecting plate is provided so as to be able to enter and exit in an optical path between a target and a laser in a vapor deposition chamber, and a laser reflected when the plate is advanced into the optical path. The beam was incident on the substrate.

(作用) 蒸着室内に半透過性の板を配置するから、レーザビー
ムを2分割した後、一方の光束を基板に入射させるよう
に光を持ち回わる鏡が不要で、レーザ光の損失が少く、
分割された一方の光束をもち回わる光路を蒸着室の外側
に形成しないから装置がコンパクトにできる。
(Operation) Since a semi-transparent plate is disposed in the vapor deposition chamber, a mirror that carries light so that one of the light beams is incident on the substrate after the laser beam is split into two is unnecessary, and the loss of laser light is small. ,
Since an optical path for carrying one of the divided light beams is not formed outside the evaporation chamber, the apparatus can be made compact.

(実施例) 第1図に本発明の一実施例装置を示す。図で1は蒸着
室で、Tはターゲット、Bはターゲット上方にターゲッ
トと対向して置かれた基板である。Lはレーザで、蒸着
室の窓11を通してレーザビームをターゲットTに照射す
る。2は蒸着室内に垂直に立てられた回転軸で上端に扇
形板3が固着されており、モータ4によって回転させる
ことができる。扇形板3は第2図に示すように回転中心
を中心とする円周上に半透光部3h、全反射部3a、透過窓
3tの3つの部分が設けられており、軸2を回わすことに
よりこれら三部分の何れかをレーザLからターゲットT
に向けて出射されるレーザビームの光路中に位置させる
ことができる。そして扇形板3は半透光部3h,全反射部3
a等をレーザビーム中に置いたとき反射されたレーザ光
が基板Bに照射される。半透光部3hは全反射面に多数の
光透過孔を配置したメッシュ構造でもよく、或は半透明
板でもよい。扇形板の半透光部3hの部分は周縁が切欠い
てあって、ターゲットTからの蒸発物質が基板に向って
スパッタされるのを阻止しないようにしてあり、その他
の部分では扇形板3がターゲットTと基板Bとの間に介
在して、ターゲットと基板の間を蒸着物質が飛行できな
いようになっている。
(Embodiment) FIG. 1 shows an apparatus according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a vapor deposition chamber, T denotes a target, and B denotes a substrate placed above the target so as to face the target. L denotes a laser, which irradiates a target T with a laser beam through a window 11 of the evaporation chamber. Reference numeral 2 denotes a rotating shaft that is vertically set in the vapor deposition chamber, and has a fan-shaped plate 3 fixed to the upper end thereof, which can be rotated by a motor 4. As shown in FIG. 2, the sector plate 3 has a semi-transparent portion 3h, a total reflection portion 3a, and a transmission window on a circumference centered on the rotation center.
3t are provided, and by rotating the shaft 2, any one of these three portions is transmitted from the laser L to the target T.
Can be located in the optical path of the laser beam emitted toward. The fan-shaped plate 3 has a semi-transparent portion 3h and a total reflection portion 3
The substrate B is irradiated with the reflected laser light when a is placed in the laser beam. The translucent portion 3h may have a mesh structure in which a large number of light transmitting holes are arranged on the total reflection surface, or may be a translucent plate. The semi-transparent portion 3h of the sector plate is notched at the periphery so as not to prevent the evaporating substance from the target T from being sputtered toward the substrate. The interposition between T and the substrate B prevents the deposition material from flying between the target and the substrate.

上述装置で実際に薄膜を蒸着する操作は次のような順
序で行われる。まず第3図Aに示すように扇形板3を全
反射部3aがレーザビームの光路中に位置するように回わ
し、レーザLを作動させる。この操作により基板Bがレ
ーザ光の照射を受けてクリーニングされる。次に扇形板
を第3図Bに示すように透過窓3tがレーザビーム光路に
位置するように回わしてレーザビームをターゲットTに
照射してプレスパッタを行う。こうしてターゲット表面
のクリーニングが行われる。このときターゲットからの
蒸発物質は扇形板3にさえぎられて基板Bが汚染される
ことはない。最後に第3図Cに示すように扇形板の半透
光部3hをレーザ光路中に位置させ、レーザを作動させ
る。このときレーザ光は半透光部3hにより一部は基板B
に反射されて蒸着物質のマイグレーションを促進させ、
他の一部はターゲットTを照射してターゲット物質を蒸
発させる。
The operation of actually depositing a thin film with the above-described apparatus is performed in the following order. First, as shown in FIG. 3A, the sector plate 3 is turned so that the total reflection portion 3a is located in the optical path of the laser beam, and the laser L is operated. With this operation, the substrate B is cleaned by being irradiated with the laser beam. Next, as shown in FIG. 3B, the fan-shaped plate is turned so that the transmission window 3t is positioned in the laser beam optical path, and the target T is irradiated with the laser beam to perform pre-sputtering. Thus, the cleaning of the target surface is performed. At this time, the evaporating substance from the target is blocked by the fan-shaped plate 3 and the substrate B is not contaminated. Finally, as shown in FIG. 3C, the semi-transparent portion 3h of the fan-shaped plate is positioned in the laser beam path, and the laser is operated. At this time, a part of the laser beam
Is reflected to promote the migration of the deposition material,
The other part irradiates the target T to evaporate the target material.

第4図は上述実施例でターゲットの上方にターゲット
からの蒸発物質の発散範囲を規制するマスクMを設けた
もので、ターゲットからの蒸発物質の組成が蒸発物質の
発散範囲の周辺部で中央部と異っている場合に周辺部が
基板に蒸着して不均一組成の薄膜ができるのを防ぐとと
もに、ターゲット蒸発物質が扇形板3の下面に付着する
のを阻止するものである。
FIG. 4 shows a case where a mask M for regulating the divergence range of the evaporating substance from the target is provided above the target in the above embodiment, and the composition of the evaporating substance from the target is at the periphery of the evaporating substance divergence area and at the center. If not, the peripheral portion is prevented from being deposited on the substrate to form a thin film having a non-uniform composition, and at the same time, the target evaporating substance is prevented from adhering to the lower surface of the sector plate 3.

基板Bのクリーニング、マイグレーション促進のため
のレーザ光照射は蒸着範囲全面に行う必要があるから、
レーザビームは広げる必要があり、ターゲット照射は蒸
発を促進させるためレーザビームを集光させる必要があ
る。そのため、レーザとターゲットとの間には集光レン
ズが挿入されているが、そのまゝでは基板Bを照射する
レーザ光も集光される。上例では全反射面3aおよび、半
透光部3hの上面を凸面にして基板Bに向けて反射される
レーザビームを発散させているが、ターゲットからの蒸
発物質はターゲット表面に垂直方向を中心にして或る立
体角中に蒸発するから第5図に示すようにターゲット面
を傾け、基板Bをこの傾いたターゲットTに対向させ
て、レーザビームの集光点より外れた位置に設置される
ようにしてもよい。
Since cleaning of the substrate B and laser light irradiation for promoting migration need to be performed over the entire deposition range,
The laser beam needs to be expanded, and the target irradiation needs to focus the laser beam to promote evaporation. Therefore, a condenser lens is inserted between the laser and the target, but before that, the laser light irradiating the substrate B is also focused. In the above example, the laser beam reflected toward the substrate B is diverged by making the upper surfaces of the total reflection surface 3a and the semi-transmissive portion 3h convex, but the evaporating substance from the target is centered in a direction perpendicular to the target surface. Since the target evaporates into a certain solid angle, the target surface is tilted as shown in FIG. 5, and the substrate B is placed at a position deviated from the laser beam focusing point with the substrate B facing the tilted target T. You may do so.

(発明の効果) 本発明蒸着装置は蒸着室内に半透光性の反射板をレー
ザビームの光路中に出入自在に設けることにより、一つ
のレーザの光をターゲットと基板とに分割しているの
で、レーザ光束を迂回させる鏡等を必要とせず、従って
光の損失が少く、光束を迂回させていないので装置が小
型にでき、迂回光路を確保する必要がないから、ターゲ
ットとか基板の大きさが余り制限を受けない。
(Effect of the Invention) Since the vapor deposition apparatus of the present invention divides the light of one laser beam into the target and the substrate by providing a semi-transmissive reflecting plate in the vapor deposition chamber so as to be able to enter and exit in the optical path of the laser beam. It does not require a mirror or the like for diverting the laser beam, so that the loss of light is small and the device is small because the light beam is not diverted, and there is no need to secure a detour optical path. Not too limited.

またレーザビームの光路中に出入させる板の特性を全
反射性,半透光性と交換可能とすることにより、基板蒸
着物質のマイグレーション促進の他基板のクリーニング
が簡単に行える。
In addition, by making the characteristics of the plate that enters and exits the optical path of the laser beam interchangeable between total reflection and semi-transmission, the substrate can be easily cleaned in addition to promoting the migration of the substance deposited on the substrate.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例装置の側面図、第2図は同実
施例における扇形板の平面図、第3図は同実施例装置の
操作の各段階を示す図、第4図は本発明の他の一実施例
の要部側面図、第5図は更に他の実施例の要部側面図、
第6図は従来例の側面図である。 1……蒸着室、2……回転軸、3……扇形板、3a……全
反射部、3h……半透光部、3t……透過窓、4……モー
タ、B……基板、T……ターゲット、L……レーザ、M
……マスク。
1 is a side view of an apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of a sector plate in the embodiment, FIG. 3 is a view showing each stage of operation of the apparatus in the embodiment, and FIG. FIG. 5 is a side view of a main part of another embodiment of the present invention, FIG.
FIG. 6 is a side view of a conventional example. 1 ... Evaporation chamber, 2 ... Rotation axis, 3 ... Sector plate, 3a ... Total reflection part, 3h ... Semi-transparent part, 3t ... Transmission window, 4 ... Motor, B ... Substrate, T …… Target, L …… Laser, M
……mask.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ターゲットにレーザビームを照射して、基
板にターゲット物質を蒸着させる装置において、蒸着室
内に、ターゲットに入射するレーザビームの光路中に半
透光性板を、この半透光性板を上記光路中に進出させた
とき、この半透光性板によって反射された上記光路のレ
ーザビーム光の一部が基板に入射するような傾きで出入
自在に設けたことを特徴とする薄膜作成装置。
1. An apparatus for irradiating a target with a laser beam to deposit a target material on a substrate, wherein a semi-translucent plate is provided in an optical path of a laser beam incident on the target in a deposition chamber. A thin film characterized in that when the plate is advanced into the optical path, a part of the laser beam light of the optical path reflected by the semi-translucent plate is provided so as to be able to enter and exit with a tilt such that it enters the substrate. Creating device.
【請求項2】ターゲットにレーザビームを照射して、基
板にターゲット物質を蒸着させる装置において、蒸着室
内に、ターゲットに入射するレーザビームの光路中に半
透光性板と全反射性板とを交互に出入可能に、かつ半透
光性板および全反射性板とも上記光路中に進出させたと
きは、これらの半透光性板または全反射性板で反射され
た上記光路のレーザビーム光が上記基板に入射するよう
な傾きで設けたことを特徴とする薄膜作成装置。
2. An apparatus for irradiating a target with a laser beam to deposit a target material on a substrate, wherein a semi-transparent plate and a total reflection plate are provided in an optical path of the laser beam incident on the target. When the semi-transparent plate and the total reflection plate are allowed to enter and exit alternately and both the semi-transmission plate and the total reflection plate are advanced into the optical path, the laser beam light of the optical path reflected by these semi-transmission plates or the total reflection plate is reflected. A thin film forming apparatus, wherein the film is provided at an inclination such that the light is incident on the substrate.
JP28037189A 1989-10-28 1989-10-28 Thin film production equipment Expired - Fee Related JP2906485B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28037189A JP2906485B2 (en) 1989-10-28 1989-10-28 Thin film production equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28037189A JP2906485B2 (en) 1989-10-28 1989-10-28 Thin film production equipment

Publications (2)

Publication Number Publication Date
JPH03146658A JPH03146658A (en) 1991-06-21
JP2906485B2 true JP2906485B2 (en) 1999-06-21

Family

ID=17624087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28037189A Expired - Fee Related JP2906485B2 (en) 1989-10-28 1989-10-28 Thin film production equipment

Country Status (1)

Country Link
JP (1) JP2906485B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2905865B2 (en) * 1995-06-01 1999-06-14 工業技術院長 Vapor deposition method and vapor deposition device for metal molded body surface

Also Published As

Publication number Publication date
JPH03146658A (en) 1991-06-21

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