JPS62294164A - Method and apparatus for vapor deposition - Google Patents

Method and apparatus for vapor deposition

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Publication number
JPS62294164A
JPS62294164A JP13771086A JP13771086A JPS62294164A JP S62294164 A JPS62294164 A JP S62294164A JP 13771086 A JP13771086 A JP 13771086A JP 13771086 A JP13771086 A JP 13771086A JP S62294164 A JPS62294164 A JP S62294164A
Authority
JP
Japan
Prior art keywords
vapor deposition
substrate
light
deposition material
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13771086A
Other languages
Japanese (ja)
Inventor
Hisao Hayashi
久雄 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13771086A priority Critical patent/JPS62294164A/en
Publication of JPS62294164A publication Critical patent/JPS62294164A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a vapor deposited film having a uniform thickness on the surface of a plate material for vapor deposition by mounting a vapor deposition material to one face of a light transmissive substrate, disposing the plate material for vapor deposition to face said face ad radiating laser light from the back of the light transmissive substrate. CONSTITUTION:The substrate 11 consisting of quart, etc., having excellent light transmissivity is disposed in a vacuum vessel 13. The vapor deposition material such as Al, Au, W, Ti, or Mo is mounted to the surface 11a of the light transmissive substrate 11. The flat plate material 14 for vapor deposition having a large aspect ratio of the surface 14a for vapor deposition is disposed to the position where said material face the surface of the substrate. the quartz substrate is irradiated with laser light 15 from behind the same. The laser light light 15 passes the substrate 11 and heats and evaporates the material 12, thus forming the vapor deposited film of a uniform thickness on the surface 14a of the material 14 facing same.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔産業上の利用分野] 本願の発明は、蒸着材料を加熱蒸発させてこの蒸着材料
を被蒸着材に付着させる蒸着方法及び蒸着装置に関する
ものである。
Detailed Description of the Invention 3. Detailed Description of the Invention [Industrial Application Field] The invention of the present application relates to a vapor deposition method and a vapor deposition apparatus for heating and vaporizing a vapor deposition material and adhering the vapor deposition material to a material to be vaporized. It is.

〔発明の概要〕[Summary of the invention]

本願の発明は、上記の様な蒸着方法及び蒸着装置におい
て、透光性の基板の第1の面に配されている蒸着材料に
被蒸着材の被蒸着面を対向させ、基板の第1の面とは反
対側の第2の面に加熱用の光を照射することによって、
均一な蒸着と高いスループットとを得ることができる様
にしたものである。
The present invention provides the vapor deposition method and vapor deposition apparatus as described above, in which the surface of the material to be vaporized faces the vapor deposition material disposed on the first surface of the transparent substrate, and By irradiating the second surface opposite to the first surface with heating light,
This makes it possible to obtain uniform vapor deposition and high throughput.

〔従来の技術〕[Conventional technology]

7着方法としては、点状の蒸着材料を高真空中で加熱し
て蒸発させる方法が一般的である。そしてこの場合、多
数の被蒸着材に対して均一な蒸着を行うために、平均自
由行路を長くする方法が一般的である。
7. A common method for depositing is a method in which point-shaped vapor deposition material is heated and evaporated in a high vacuum. In this case, in order to perform uniform deposition on a large number of materials to be deposited, it is common to lengthen the mean free path.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところが、被蒸着面が凹凸状の被蒸着材に対して蒸着を
行う場合、平均自由行路が長いと、被蒸着面の凹部には
蒸着材料が付着しに<<、均一な蒸着を行うことができ
ない。
However, when performing evaporation on a material whose surface is uneven, if the mean free path is long, the evaporation material will adhere to the concave portions of the evaporation surface, making it difficult to perform uniform evaporation. Can not.

また、各被蒸着材の被蒸着面の面積が大きくなると、一
度に蒸着を行える被蒸着材の個数が少なくなり、スルー
ブツトが低下する。
Furthermore, when the area of the deposition surface of each deposition material increases, the number of deposition materials that can be deposited at one time decreases, and the throughput decreases.

C問題点を解決するための手段〕 本願の発明による蒸着方法は、透光性の材質から成って
おり第1の面11aに蒸着材料12が配されている基板
11を用意する工程と、被蒸着材14の被蒸着面14a
を前記蒸着材料12に対向させる工程と、前記基板11
の前記第1の面11aとは反対側の第2の面11bに光
15を照射して前記蒸着材料12を加熱することによっ
てこの蒸着材料12を前記被蒸着面14aに蒸着させる
工程とを夫々具備している。
Means for Solving Problem C] The vapor deposition method according to the invention of the present application includes the steps of preparing a substrate 11 made of a translucent material and having a vapor deposition material 12 disposed on a first surface 11a; Deposition surface 14a of vapor deposition material 14
facing the vapor deposition material 12; and
heating the vapor deposition material 12 by irradiating the second surface 11b opposite to the first surface 11a of the vapor deposition material 12, and depositing the vapor deposition material 12 on the vapor deposition surface 14a. Equipped with

また、本願の発明による蒸着装置は、透光性の材質から
成っており第1の面11aに蒸着材料12が配されてい
る基板11と、被蒸着材14の被蒸着面14aを前記蒸
着材料12に対向させた状態で前記被蒸着材14を支持
する支持機構と、前記基板11の前記第1の面11aと
は反対側の第2の面11bに加熱用の光15を照射する
光源とを夫々具備している。
Further, the vapor deposition apparatus according to the invention of the present application includes a substrate 11 made of a light-transmitting material and having a vapor deposition material 12 disposed on the first surface 11a, and a vapor deposition surface 14a of the vapor deposition material 14 made of a transparent material. a support mechanism that supports the material to be deposited 14 while facing the substrate 12; and a light source that irradiates a second surface 11b of the substrate 11 opposite to the first surface 11a with heating light 15. Each is equipped with the following.

〔作用〕[Effect]

本願の発明による蒸着方法及び1着装置では、基板11
の面11aに配されている蒸着材料12で蒸着を行うの
で、蒸着源が点状ではなく面状であり、被蒸着面14a
のアスペクト比が高くてもこの被蒸着面14aに略所定
の角度で到達する蒸着材料12の割合が高い。
In the vapor deposition method and single deposition apparatus according to the invention of the present application, the substrate 11
Since the vapor deposition is performed using the vapor deposition material 12 arranged on the surface 11a, the vapor deposition source is not point-like but planar, and
Even if the aspect ratio of the evaporation material 12 is high, a high proportion of the evaporation material 12 reaches the evaporation target surface 14a at approximately a predetermined angle.

また、蒸着源が面状であるので、被蒸着面14aを蒸着
材料12に対向させつつ基板11や光源を被蒸着材14
に対して相対的に基板11の面11a方向へ移動させれ
ば、床面積の小さな蒸着装置でも、被蒸着面14aの面
積が大きい複数の被蒸着材14を連続的に蒸着すること
ができる。
Further, since the vapor deposition source is planar, the substrate 11 and the light source are placed on the vapor deposition material 12 while the vapor deposition surface 14a is opposed to the vapor deposition material 12.
If the substrate 11 is moved toward the surface 11a of the substrate 11 relative to the substrate 11, a plurality of materials 14 to be deposited having a large area of the surface to be deposited 14a can be continuously deposited even in a deposition apparatus having a small floor area.

また、基板11のうちで被蒸着材14の被蒸着面14a
が対向している第1の面11aとは反対側の第2の而1
1bを加熱用の光15で照射する様にしでいるので、蒸
着材料12と被蒸着面14aとを近接させて蒸着を行う
ことができる。
In addition, of the substrate 11, the deposition surface 14a of the deposition material 14 is
The second face 1 on the opposite side to the first face 11a facing
1b is irradiated with the heating light 15, vapor deposition can be performed with the vapor deposition material 12 and the surface to be vapor-deposited 14a brought close to each other.

〔実施例〕〔Example〕

以下、本願の発明の一実施例を図面を参照しながら説明
する。
Hereinafter, one embodiment of the invention of the present application will be described with reference to the drawings.

本実施例では、第1の面11aに蒸着材料12が予め蒸
着されている石英基板11を真空容器13内に配すると
共に、この真空容器13内で被蒸着材14の被蒸着面1
4aを蒸着t、4料12に対向させる。
In this embodiment, a quartz substrate 11 on which a vapor deposition material 12 is preliminarily deposited on a first surface 11a is placed in a vacuum vessel 13, and a surface to be vaporized of a material to be vaporized 14 is placed in the vacuum vessel 13.
4a is made to face vapor deposition t and 4 material 12.

この場合、蒸着によって被蒸着面14aに形成すべき膜
厚が0.4μm程度とすれば、蒸着材料12と被蒸着面
14aとの間隔は5〜10μm程度であるのが好適であ
る。
In this case, if the thickness of the film to be formed on the deposition surface 14a by vapor deposition is about 0.4 μm, the distance between the deposition material 12 and the deposition surface 14a is preferably about 5 to 10 μm.

そして、石英基板11の第1の面11aとは反対側の第
2の面11bに、レーザ光源(図示せず)からレーザ光
15を照射する。石英基板11はレーザ光15に対して
透過性を有しているので、レーザ光15は石英基板11
を透過して蒸着材料12のみを選択的に加熱する。する
と、この加熱によって蒸着材料12が蒸発して、蒸発し
た蒸着材料12が被蒸着面14aに付着する。
Then, a second surface 11b of the quartz substrate 11 opposite to the first surface 11a is irradiated with laser light 15 from a laser light source (not shown). Since the quartz substrate 11 is transparent to the laser beam 15, the laser beam 15 is transmitted through the quartz substrate 11.
is transmitted through the vapor deposition material 12 to selectively heat only the vapor deposition material 12. Then, the evaporation material 12 is evaporated by this heating, and the evaporated evaporation material 12 adheres to the surface to be evaporated 14a.

蒸着材料12としては、AI、Au、 W、 T+、 
Mo等を用いることができ、レーザ光源としては、YA
Gレーザ、^rレーザ、エキシマレーザ等を用いること
ができる。
The vapor deposition material 12 includes AI, Au, W, T+,
Mo etc. can be used, and as a laser light source, YA
G laser, ^r laser, excimer laser, etc. can be used.

レーザ光15の照射方法としては、ステップアンドリピ
ート式で照射する方法、ライン状に照射する方法、石英
基板11の第2の面11bの全面に照射する方法等があ
る。
Methods of irradiating the laser beam 15 include a step-and-repeat method, a line-shaped irradiation method, and a method of irradiating the entire second surface 11b of the quartz substrate 11.

また、レーザ光15を反則するマスクでバクーンを形成
し、このマスクを石英基板11の第2の面11bに配す
る様にすれば、マスクのパターンで蒸着材料12を被蒸
着面14aに付着させることができる。
Furthermore, if a mask is formed with a mask that deflects the laser beam 15 and this mask is placed on the second surface 11b of the quartz substrate 11, the vapor deposition material 12 can be adhered to the vapor deposition surface 14a in accordance with the pattern of the mask. be able to.

もし、被蒸着面14aに形成すべき膜厚と同じ膜厚の蒸
着材料12を石英基板11に予め蒸着しておき、蒸着材
料12をその融点よりも高い温度にまで急激に加熱する
様にすれば、1着が非常に短時間で行われる。
If the evaporation material 12 with the same thickness as that to be formed on the evaporation target surface 14a is deposited on the quartz substrate 11 in advance, the evaporation material 12 is rapidly heated to a temperature higher than its melting point. For example, the first place is achieved in a very short time.

これに対して、比較的厚い膜厚の蒸着材料12を石英基
板11に予め蒸着しておき、蒸着材料12をその融点付
近まで加熱して蒸発を徐々に行う様にすれば、蒸着に比
較的長時間を要するが、同一の石英基板11で複数回の
蒸着を行うことができる。
On the other hand, if the vapor deposition material 12 with a relatively thick film thickness is pre-deposited on the quartz substrate 11 and the vapor deposition material 12 is heated to around its melting point to gradually evaporate, the vapor deposition becomes relatively thick. Although it takes a long time, vapor deposition can be performed multiple times on the same quartz substrate 11.

なお、上述の実施例では蒸着材料12を予め蒸着した石
英基板11を用いているが、薄膜状の蒸着材料12を石
英基板11上に単に載置するのみでもよい。この場合で
も、石英基板11が蒸着材料12を支持するので、取扱
いが容易である。
Although the above embodiment uses the quartz substrate 11 on which the evaporation material 12 has been deposited in advance, the evaporation material 12 in the form of a thin film may simply be placed on the quartz substrate 11. Even in this case, since the quartz substrate 11 supports the vapor deposition material 12, handling is easy.

また、上述の実施例では加熱用の光としてレーザ光を用
いたが、赤外線等の他の光を用いてもよい。その場合は
、これらの赤外線等に対して透過性を有している基板に
よって蒸着材料12を支持する様にする。
Furthermore, although laser light was used as the heating light in the above-described embodiments, other light such as infrared light may also be used. In that case, the vapor deposition material 12 is supported by a substrate that is transparent to these infrared rays and the like.

〔発明の効果〕〔Effect of the invention〕

本願の発明による蒸着方法及び蒸着装置では、被蒸着材
の被蒸着面のアスペクト比が高くてらこの被蒸着面に略
所定の角度で到達する蒸着材料の割合が高く、しかも蒸
着材料と被蒸着面とを近接させて蒸着を行うことができ
るので、被蒸着面の凹部にも蒸着を行うことができて、
均一な蒸着が可能である。
In the vapor deposition method and vapor deposition apparatus according to the invention of the present application, since the aspect ratio of the vapor deposition surface of the vapor deposition material is high, the proportion of the vapor deposition material reaching the vapor deposition surface at approximately a predetermined angle is high, and the vapor deposition material and the vapor deposition surface are Since the vapor deposition can be carried out in close proximity to the
Uniform vapor deposition is possible.

また、被蒸着面の面積が大きい複数の被蒸着材でも連続
的に蒸着することができるので、商いスループットを得
ることができる。
In addition, since a plurality of materials to be deposited having a large area can be continuously deposited, a high throughput can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本願の発明による蒸着装置を示す概略的な側断面
図である。 なお図面に用いた符号において、 11−・・・・−・−・・・−・石英基板11 a−−
−−−−−一・−第1の面11b−・−・−−−一−−
−・−第2の面12−−−一・・・−・−−−−一−−
・−蒸着材料14−・−−−一−−−−−−−−−−−
被蒸着材14 a−一−−−−−−・−・−被蒸着面1
5・−一−−−−−−−−−−−−−−−レーザ光であ
る。
The drawing is a schematic side sectional view showing a vapor deposition apparatus according to the invention of the present application. In addition, in the symbols used in the drawings, 11-...----...- Quartz substrate 11 a--
------1.-First surface 11b------1--
−・−Second surface 12−−−1・・・−・−−−−1−−
- Vapor deposition material 14 - - - - - - - - - - - - Vapor deposition material 14 - - - - -
Deposited material 14 a-1--------Deposited surface 1
5.-1-----------------Laser light.

Claims (1)

【特許請求の範囲】 1、透光性の材質から成っており第1の面に蒸着材料が
配されている基板を用意する工程と、被蒸着材の被蒸着
面を前記蒸着材料に対向させる工程と、 前記基板の前記第1の面とは反対側の第2の面に光を照
射して前記蒸着材料を加熱することによってこの蒸着材
料を前記被蒸着面に蒸着させる工程とを夫々具備する蒸
着方法。 2、透光性の材質から成っており第1の面に蒸着材料が
配されている基板と、 被蒸着材の被蒸着面を前記蒸着材料に対向させた状態で
前記被蒸着材を支持する支持機構と、前記基板の前記第
1の面とは反対側の第2の面に加熱用の光を照射する光
源とを夫々具備する蒸着装置。
[Claims] 1. A step of preparing a substrate made of a light-transmitting material and having a vapor deposition material arranged on its first surface, and making the surface of the vapor-deposited material face the vapor-deposited material. and a step of irradiating a second surface of the substrate opposite to the first surface with light to heat the deposition material, thereby depositing the deposition material on the surface to be deposited. vapor deposition method. 2. A substrate made of a transparent material and having a vapor deposition material arranged on its first surface, and supporting the vapor deposition material with the vapor deposition surface of the vapor deposition material facing the vapor deposition material. A vapor deposition apparatus including a support mechanism and a light source that irradiates a second surface of the substrate opposite to the first surface with heating light.
JP13771086A 1986-06-13 1986-06-13 Method and apparatus for vapor deposition Pending JPS62294164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13771086A JPS62294164A (en) 1986-06-13 1986-06-13 Method and apparatus for vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13771086A JPS62294164A (en) 1986-06-13 1986-06-13 Method and apparatus for vapor deposition

Publications (1)

Publication Number Publication Date
JPS62294164A true JPS62294164A (en) 1987-12-21

Family

ID=15205012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13771086A Pending JPS62294164A (en) 1986-06-13 1986-06-13 Method and apparatus for vapor deposition

Country Status (1)

Country Link
JP (1) JPS62294164A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361366A (en) * 1989-07-28 1991-03-18 Matsushita Electric Ind Co Ltd Laser beam sputtering device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361366A (en) * 1989-07-28 1991-03-18 Matsushita Electric Ind Co Ltd Laser beam sputtering device

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